Abstract
In the present paper, strain-compensated multi-quantum wells (SCMQW) InGaAs/GaAsP grown by low-pressure metal organic chemical vapour deposition (MOCVD) were used as the active layers of near infrared LED. The single nude LED chip was put down on the copper header p-side down, using a GaAs transparent substrate and AuBe alloy mirror reflector. The forward voltage under a bias current of 20 mA was measured to be 1.2 V while the reverse voltage at 10 μA was 5–6 V. The output power of 10.5 mW and 18% quantum efficiency were obtained under a bias current of 50 mA.
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