Stop Insulated Gate Bipolar Transistor Research Articles

A Study on the Electric Characteristics of the Trench Gate Field Stop Insulated Gate Bipolar Transistor Through Two-Step Field Stop

Insulated gate bipolar transistor (IGBT) element is an electrically conductive device with Bipolar junction transistor (BJT) output and Metal Oxide Silicon Field Effect Transistor (MOSFET) input. The IGBTs is a power semiconductor device that aims for high breakdown voltage, low on-state voltage, fast switching and reliability. This paper is, the experiment was conducted with a two-step field stop, IGBT instead of a traditional one step field stop. In order to minimize the energy loss caused by the trade-off relationship between breakdown voltage and the on-state voltage drop, the experiment was conducted by forming a two-step field stop. Through concentration control between steps, breakdown voltage, On-state Voltage drop and turn off time could be adjusted in detail, and efficient characteristic values could be obtained accordingly. Experiments have confirmed that the On state voltage drop and turn-off time, in particular, can be adjusted by small failure voltage loss upon change in the first stage field stop.

A new trench gate field stop insulated gate bipolar transistor (IGBT) with a significant reduction in Miller capacitance

In this paper, a new trench-gate field-stop insulated gate bipolar transistor (IGBT) structure having improved performances is proposed, investigated and compared with the properties of the conventional trench-gate field-stop IGBT. An npn structure is introduced to the gate trench in order to reduce the Miller capacitance and gate-collector charge through the introduction of the two diode capacitances in series. The simulation results demonstrate that the proposed structure exhibits a significant improvement in the following two aspects, without degrading the other performances. The first is the reduction of the Miller capacitance by 92.0% and 48.3% at Vce = 0 V and Vce = 20 V, respectively and the second is the reduction in gate-collector charge by 66.7%.

Study on 3.3 kV Super Junction Field Stop Insulated Gate Bipolar Transistor According to Design and Process Parameters.

In this paper, we analyzed the electrical characteristics of 3.3 kV super junction FS IGBT as next generation power device by structural design. The device parameters were extracted by design and process simulation. Especially, to obtain optimal breakdown voltage, we researched the breakdown characteristic. To begin with, we confirmed that the breakdown voltage was decreased as trench depth was increased. And we analyzed the breakdown voltage according to p-pillar dose. As a result of experiment, we confirmed that the breakdown voltage was increased as p-pillar dose was increased. To obtain over 3.3 kV, the dose of p-pillar was 5×1013 cm-2, the resistivity of epi layer was 140 Ω·cm. We will extract design and process parameters considering on state voltage drop.

Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid $p^{{+}}/{n}$ Collector Structure

A trench-gate field stop insulated gate bipolar transistor (TFS-IGBT) with a novel hybrid ${p} ^{+}/{n}$ collector structure is proposed to enhance the trade-off relationship between the on-state voltage drop ( ${V} _{\mathrm{ on}}$ ) and the turn-off energy loss ( ${E} _{\mathrm{ off}}$ ). The proposed hybrid collector structure consists of a ${p} ^{+}/{n}$ layer between the ${p} ^{+}$ collector and the field stop layer. During turn-on, the ${p} ^{+}$ regions in the hybrid ${p} ^{+}/{n}$ layer provide high carrier injection efficiency. During turn-off transient, the ${n}$ -regions in the hybrid ${p} ^{+}/{n}$ collector provide fast carrier extraction paths for holes. 2-D numerical simulations comparing a conventional TFS-IGBT, an injection efficiency controlled IGBT with the proposed hybrid ${p} ^{+}/{n}$ collector TFS-IGBT (HC-IGBT) having similar device structures show that for a 1.2 kV rating and with ${V} _{\mathrm{ on}}$ at 1.5 V, the HC-IGBT has an advantage in ${E} _{\mathrm{ off}}$ reduction by 69% and 22%, respectively. Finally, backside mask alignment is not needed for fabricating the proposed hybrid ${p} ^{+}/{n}$ collector structure.

Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient

The dynamic avalanche has a huge impact on the switching robustness of carrier stored trench bipolar transistor (CSTBT). The purpose of this work is to investigate the CSTBT’s dynamic avalanche mechanism during clamped inductive turn-off transient. At first, with a Mitsubishi 600V/150A CSTBT and a Infineon 600V/200A field stop insulated gate bipolar transistor (FS-IGBT) utilized, the clamped inductive turn-off characteristics are obtained by double pulse test. The unclamped inductive switching (UIS) test is also utilized to identify the CSTBT’s clamping voltage under dynamic avalanche condition. After the test data analysis, it is found that the CSTBT’s dynamic avalanche is abnormal and can be triggered under much looser condition than the conventional buffer layer IGBT. The comparison between the FS-IGBT and CSTBT’s experimental results implies that the CSTBT’s abnormal dynamic avalanche phenomenon may be induced by the carrier storage (CS) layer. Based on the semiconductor physics, the electric field distribution and dynamic avalanche generation in the depletion region are analyzed. The analysis confirms that the CS layer is the root cause of the CSTBT’s abnormal dynamic avalanche mechanism. Moreover, the CSTBT’s negative gate capacitance effect is also investigated to clarify the underlying mechanism of the gate voltage bump observed in the test. In the end, the mixed-mode numerical simulation is utilized to reproduce the CSTBT’s dynamic avalanche behavior. The simulation results validate the proposed dynamic avalanche mechanisms.