In the presented work, cell's parameter of heterostructure silicon solar cell modelled as: ITO (front contact)/n-Dn/p-cSi/Ag under the illumination of monochromatic light at standard spectrum AM-1.5 G, has been optimized by using AFORS-HET v 2.5 software. We have used n-type diamane as an emitter layer and the nature of diamane has been considered 3D in spite of 2D as well as electronic nature of diamane is considered isotropic. To ensure that Schottky junction has been formed at interface, the electric contacts have been made along the c-axis so that maximum charge carriers get collected. To obtain the high efficiency, various parameters of n-type diamane as well as p-type c-Si layers have been optimized and the maximum efficiency of 16.84% has been obtained for single layer n-diamane at 100 µm thick silicon wafer. We also investigated the spectral response and dependency of temperature on the performance of exclusively designed solar cell and we obtained the best efficiency 16.84% at 300 K temperature. In order to check the performance on commercially available silicon we have optimized the same solar cell by considering the parameters of commercially available p-type crystalline silicon layer and maximum efficiency 10.41% was achieved. After getting the maximum efficiency 16.84% we further carried out the simulation by optimizing the layer numbers of n-diamane and found decrement in the efficiency up to 15.3% which indicates that, efficiency slightly decreases as layer number increases. We have demonstrated that n-type diamane might be used as an effective emitter layer in crystalline Si heterojunction solar cell.
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