Bi-layered ferroelectric SrBi2Ta2O9 (SBT) films were successfully prepared on Pt/SiO2/Si and Pt/Ti/SiO2/Si substrates at 550°C by plasma-enhanced metalorganic chemical vapor deposition. A Bi2Ti4O11 (BTO) phase was formed at the interface between SBT films and the Pt/Ti/SiO2/Si during the deposition of SBT films at 550°C. The leakage current density of the SBT films was decreased by the formation of BTO phase. The leakage current densities of SBT films deposited on Pt/SiO2/Si and Pt/Ti/SiO2/Si substrates were about 5.0 × 10-7 and 5.0 × 10-8 A/cm2 at an applied field of 300 kV/cm, respectively. The SBT films were controlled by Schottky emission. The Schottky barrier heights of SBT films deposited on Pt/SiO2/Si and Pt/Ti/SiO2/Si were about 0.8 and 1.2 eV, respectively.