Investigation of preannealing method for preparation of robust SrBi2Ta2O9 thin films by chemical solution deposition

Abstract

Bismuth layered-perovskite thin films of SrBi2Ta2O9 (SBT) solid solution were prepared by chemical solution deposition method. In order to form the robust SBT thin films, preannealing methods such as rapid thermal annealing (RTA) and furnace annealing were studied in terms of physical and electrical properties of SBT thin films. SBT thin films preannealed by furnace exhibited better surface morphology and electrical properties than those preannealed by RTA. The crystallization mechanism of SBT thin films by heat treatment was examined by using X-ray diffraction (XRD) analysis and scanning electron micrograph (SEM). For the robust SBT thin films with (P*-P⁁) value of about 20 uC/cm2, leakage current density of less than 10−7 A/cm2, and breakdown voltage of 15 V, the optimal condition of furnace preannealing was found to be 700 °C for 30 min.