Abstract
Ferroelectric SrBi2Ta2O9 (SBT) films were grown by pulsed-laser deposition (PLD) at different substrate temperatures and fluences. A correlation between film structure and ferroelectric properties is established. The dielectric function e′ of thin SBT films shows a Curie–Weiss behavior well below the peak temperature Tmax and relaxor-like behavior in the vicinity of Tmax. Domain walls have a strong influence on the dielectric and ferroelectric properties and on the polarization fatigue of SBT films below 100 °C. The formation of ferroelectric phases is favored at lower substrate temperatures by incorporating Bi2O3 template layers into the structure.
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