Spontaneous Emission Threshold Research Articles

A New Organic Laser Material Design Toward Ultra-Low Amplified Spontaneous Red Emission and Ultra-Bright Electroluminescence.

Significant efforts are dedicated to developing new classes of organic semiconductor materials to achieve electrically pumped lasing. However, further advancements are necessary to understand the relationship between the structure and property for the creation of innovative laser materials with high stability, low triplet yield, ultra-low lasing threshold, and low-efficiency roll-off at ultra-bright electroluminescence. Here, a new design principle is validated for organic semiconductor laser materials, demonstrating simultaneous enhancement in the key figures of merit of low amplified spontaneous emission thresholds (Eth), efficient electroluminescence, and low triplet yields. By applying the Einstein stimulated emission rate equation and Strickler-Berg approximation, Two red-emitting laser dimers of Cibalackrot with different linkers are constructed, leading to giant enhancement (≈250%) in oscillator strengths, and stimulated emission cross-sections. When blended in poly(9,9-dioctylfluorene-alt-benzothiadiazole), the new dimers achieve an ultra-low Eth (4.5±0.3µJcm-2) in the deep red region (λASE=655nm), among the lowest reported for deep-red emitters. Organic light-emitting diodes (OLEDs) utilizing the dimer blend exhibit low-efficiency roll-off under DC mode. Under pulse operation, the OLEDs achieve high current densities (90Am-2) and ultrahigh brightness (≈710000cdm-2). These findings highlight the dimerization design as an excellent platform to advance organic semiconductor laser materials.

(Invited) Amplified Spontaneous Emission Dynamics of a Lead Halide Perovskite Crystal as Revealed by Femtosecond Transient Absorption Microscopy

Organic-inorganic lead halide perovskite materials (e.g. CH3NH3PbX3, CsPbX3, X=Cl, Br, I) have various attractive properties not only for solar cells but also for LED and nanoscale lasers because of their wavelength tunability and low lasing threshold. Such an efficient lasing is indispensable for their applications, and the essential needs are miniaturization and low threshold. While this material was reported in 2009 for use in solar cells, it is also expected to be used in light-emitting and laser devices due to its easy tunability of emission wavelength and low-cost fabrication. However, the low-threshold lasing mechanism of lead halide perovskites has not been established due to various theories on the interaction state between light and carriers generated in the cavity at the initial stage and the carrier-carrier interaction state, which has greatly hindered progress in improving performance. In the present study, we have measured transient absorption spectra of a single CH₃NH₃PbBr₃ microcrystal using a femtosecond transient absorption microscopy to reveal the initial carrier process that induces nonlinear luminescence[1].CH3NH3PbBr3 crystals were prepared by a previously reported method. Aqueous lead(II) acetate solution (100 mg/mL) was dropped onto a glass slide and dried at 60°C for 30 min to obtain a film of lead acetate. Microcrystals of CH3NH3PbBr3 were then obtained by immersing the film in methylammonium bromide solution (5 mg/mL) with isopropanol as a solvent for 20 hours at room temperature in air.For transient absorption measurements, a regeneratively amplified femtosecond pulse (Spectra-Physics, Solstice, 795 nm, 1 kHz) was split in two; the second harmonic of one beam was used as the excitation light, and the white light generated with the other beam by introducing it into an optical parametric amplifier (Light Conversion, TOPAS) and focusing the obtained signal light (1.3 mm) into a CaF2 plate was used as the probe light.Fig. 1(a) shows the transient absorption spectra of lead halide perovskite excited at the intensities over the lasing threshold. The spectral signals that were not observed before the time origin (-1 ps) were significantly observed with modulated spectral shape after the time origin (≥0 fs). The spectral bleaching around 540 nm indicates carrier generation by the excitation light, and the relaxation of the bleaching indicates the recombination of electrons and holes. Furthermore, at around 557 nm, a bleaching signal appeared as shown in Fig. 1(b), that was not represented in the transient absorption spectrum excited at the intensity below the lasing threshold. This signal is suggested to be due to amplified stimulated emission. Spectral modulation is often observed as interference of light propagating in thin-film systems. The thickness of the perovskite crystals is around 200-300 nm, which is suitable to observe the optical interference. However, generally, this interference tends to become lower in frequency as one observes longer wavelengths, which is essentially different from the modulation observed here. The spectra modulation appeared immediately after the carrier was generated, and the modulation continued for up to 1ns. These results suggest that the modulation is caused by the electric field effect of the generated carriers on the electron spectrum. Franz-Keldysh’s theory is often used for spectral modulation in the presence of an electric field. In reflectance transient absorption spectroscopy, the electric field modulated spectrum has been explained in the GaInP2 system by Franz-Keldysh’s theory in systems where charges are generated on the semiconductor surfaces[2]. These results indicate the spectral modulation occurred from the charges separated on the surface of the crystal. We will discuss the mechanism of amplified spontaneous emission and low threshold lasing dynamics at the conference site. Funding: This study was partly supported by KAKENHI (Grant Number JP22H04755, JP19K05190) and JST FOREST (JPMJFR213G).

Tetra‐Donor Pyrazine Based Thermally Activated Delayed Fluorescence Emitters for Electroluminescence and Amplified Spontaneous Emission

AbstractThermally activated delayed fluorescence (TADF) materials are expected to address triplet‐related losses in electrically driven organic lasers, as the electrically generated triplets in the materials can be converted to radiative singlets through reverse intersystem crossing (RISC). This offers a way to bypass triplet absorption and annihilation in organic semiconductor lasers (OSLs). In this work, two versatile TADF emitters 4tCzPz and 4αCbPz for application in organic light‐emitting diodes (OLEDs) and OSLs are presented. Both emitters possess moderately high singlet‐triplet energy gap, ΔEST (≈0.30 eV) and show high photoluminescence quantum yields, ΦPL, in solution and solid‐state and prominent stimulated emission features in solution. Films of 4tCzPz and 4αCbPz doped in mCBP show an amplified spontaneous emission (ASE) threshold of 41.0 and 44.9 µJ/cm2, respectively. The OLEDs with 4tCzPz and 4αCbPz emit with peak wavelengths of 492 and 475 nm, respectively, and show corresponding maximum external quantum efficiencies, EQEmax, of 24.6 and 21.3%. The research shows that D‐A TADF materials hold significant potential not only as emitters for OLEDs but also in OSLs.

Highly Stable Red Emissive Organic Semiconductor Materials with Low Amplified Spontaneous Emission Thresholds

AbstractExcited‐state intramolecular proton transfer (ESIPT) chromophores have attracted considerable attention as promising gain media for organic lasers, particularly in amplified spontaneous emission (ASE) due to their advantageous characteristics. These include an intrinsic four‐level photocycle, significant separation between absorption and emission spectra, and enhanced emission efficiency facilitated by aggregate‐induced emission. This study investigates the amplification of π‐conjugation in hydroxyphenyl‐benzothiazole (HBT)‐based ESIPT materials via dimerization to intensify ESIPT processes, surge absorption cross‐section, enhance optical gain, and induce a redshift in emission spectra. Computational study shows that the ESIPT processes of the new dimers proceed through single proton transfer where the second proton transfer is not accessible. While the ESIPT photocycle does not extend to both HBT moieties of the dimers, the dimers foster more efficient ESIPT processes in both solution and solid states than their parent HBT, resulting in substantial Stokes shifts (>233 nm). Moreover, both dimers exhibit enhanced solid‐state photoluminescence quantum yields, reaching up to ≈55%, and low solid‐state ASE threshold values (≈6.8 µJ cm−2) in the red region. Remarkably, the new dimers demonstrate excellent thermal and photostability with notably reduced spectral overlap compared to their parent, highlighting the potential utility of the approaches to developing new organic solid‐state laser materials.

Low Amplified Spontaneous Emission Threshold from Solution Processable Excited‐State Intramolecular Proton Transfer Chromophores

AbstractChromophores undergoing excited‐state intramolecular proton transfer (ESIPT) feature a distinct four‐level photocycle and significant Stokes shift, which make them ideal for achieving population inversion upon photoexcitation, a fundamental prerequisite for lasing, by mitigating the concerns of self‐absorption owing to spectral overlap. This study focuses on functionalizing the hydroxyphenyl‐benzothiazole (HBT) ESIPT laser dye through the introduction of fluorene and phenyl‐carbazole moieties at the para‐position to the hydroxyl group, to demonstrate amplified spontaneous emission (ASE) activities. The synthesized HBT derivatives not only exhibit high thermal and photostability, but also high photoluminescence quantum yields, exceeding 40%, which is noteworthy for ESIPT materials emitting in the yellow–orange to red color ranges. Computational analyses show that these new HBT materials possess substantially lower ESIPT energy barriers, compared to their parent HBT, facilitating their efficient ESIPT processes. Moreover, these derivatives demonstrate a high radiative rate of 1.47 × 108 s−1. Thin films of a fluorene‐substituted HBT (HBT‐pFl) show a low solid‐state amplified spontaneous emission threshold value of 3.8 µJ cm−2 at 582 nm, representing the lowest reported solid‐state ASE threshold for laser dyes in the orange emission region (575–600 nm) to date.

Polymer optical fiber amplifier based on all-inorganic perovskite quantum dots

The proliferation of polymer optical fibers (POFs) has opened multiple avenues of optical-based networks and sensing applications in the visible spectral range. However, the lack of efficient amplifiers significantly hinders their utilization in practical scenarios. As emerging gain media, halide perovskites have attracted considerable attention in exploring their practical applications. In this Letter, we investigated the optical gain properties of cesium lead bromide quantum dots (CsPbBr3 QDs), and by facet dip-coating, we realized a polymer optical fiber amplifier. Under a 400-nm, 163-fs Ti:Sapphire laser pumping, the amplified spontaneous emission (ASE) thresholds of 1.6 and 20.1 μJ/cm2 were achieved through stripe pumping of a QDs-thin-film and end-pumping of a polymer-fiber facet dip-coated with the QDs, respectively. A gain coefficient of 232.2 ± 22.8 cm−1 was obtained using the variable stripe length method. By coupling a broadband continuous-wave light source into the POF as the signal, the optical gain behavior was studied with varying pump fluence and signal power density. More than 20 dB optical gain was achieved within the ASE wavelength region of 530–540 nm with a predicted theoretical maximum gain of 33.6 dB. The research verifies the feasibility of amplifying continuous-wave signals in the visible spectrum and potentially closing the research gap in visible-light optical-to-optical amplifiers. This opens the avenue for further research and innovations in practical polymer-based optical amplification for a plethora of applications, including all optical processing chips and short-range interconnects, as well as visible-light and underwater communications.

Extremely Low Threshold Quasi‐CW Amplified Spontaneous Emission Achieving and Its Mechanism Study

AbstractThe development of lasing materials with weak pile‐up effect from triplet excitons, low lasing threshold, and long operational lifetime is much significant for truly continuous wave operation and electrically pumping organic lasers. However, most of organic gain media has been verified to have extreme quenching effect from triplet excitons due to its wide‐band distribution of triplet absorption spectrum. Here, it is found that the phenanthroimidazole derivatives as gain media have congenital advantages on handling triplet's issues. A very low amplified spontaneous emission (ASE) threshold of 0.56 µJ cm−2 and a long operational lifetime of 5.77 × 105 pump pulses in air atmosphere are well obtained. When increasing the pump repetition frequency from 20 Hz to 20 kHz, the operational lifetimes of the thin films have small reduction. Under a high pump repetition frequency of 200 kHz, which is quasi‐continuous wave operational regime, the PI2PhDPO thin film exhibits very low ASE threshold of 0.78 µJ cm−2 due to the tiny overlap between triplet absorption and ASE spectra.

Advanced Molecular Design for Efficient Multicolor Electrochemiluminescence and Amplified Spontaneous Emission Based on Tetra‐BF2 Complexes

AbstractAdvanced organoboron dyes, incorporating tetra‐boron difluoride (tetra‐BF2) moieties, are developed, demonstrating efficient electrochemiluminescence (ECL) emissions in the green to orange regions through direct ion annihilation. By introducing diverse alkyl modifications in the molecules, luminescence color tuning is achieved via alterations in conjugation and bending angle. A photoluminescence quantum yield of 100% in dilute solutions is successfully achieved. Notably, the introduction of alkyl groups to the methine side stabilizes the radical ionic state, resulting in a high ECL efficiency of 74% through an efficient radical‐ion annihilation pathway. The key factor is that the energy of the annihilation reaction exceeds the S1 energy required for luminescence. Spin density calculations further elucidate the substituent effects on the radical ions of complexes. Moreover, the lasing properties of these materials in the solution‐processed blend films are investigated, revealing a low amplified spontaneous emission (ASE) threshold (Eth) of 6.40 ± 0.24 µJ cm−2, which is notably lower among organic laser materials. This is attributed to their large Stokes shifts and high quantum yield. The excellent ECL and ASE performances establish these materials as a valuable addition to the existing library of organoboron dyes, offering fresh insights into the development of organic solid‐state lasers.

Device parameter to evaluate exciton energy transfer in organic whispering-gallery-mode microresonators and its dependence on the amplified spontaneous emission threshold.

Exciton energy transfer in organic whispering-gallery-mode (WGM) resonators and its effect on the amplified spontaneous emission (ASE) threshold have been investigated using the stilbene-based energy donor 4,4'-bis[(N-carbazole)styryl]biphenyl (BSB-Cz) and the coumarin-based energy acceptor 2,3,6,7-tetrahydro-1,1,7,7,-tetramethyl-1H,5H,11H-10-(2-benzothiazolyl)quinolizino[9,9a,1gh]coumarin (C545T). Using the stacked-layer structure of BSB-Cz/C545T/BSB-Cz, we fabricated bowl-shaped microresonators on silica microspheres with a total thickness of 250 nm fixing the thickness of the C545T layer to 1 nm. The ASE threshold depended on the thicknesses of the top and bottom BSB-Cz layers, which affect the magnitude of the energy transfer. To assess the relationship between the ASE threshold and energy transfer, we developed a device parameter to evaluate the magnitude of the energy transfer by formulating the rate equations. We found that ASE easily occurs under the condition that the C545T molecules become unable to accept energy from the BSB-Cz excitons owing to the high exciton density of C545T, and that the ASE threshold decreases with decreasing device parameter. The device parameter is useful for optimizing microresonator structures in multi-component organic WGM resonators that utilize energy transfer.

Room temperature amplified spontaneous emissions in a sub-centimeter sized CsPbBr3 bulk single crystal.

All inorganic perovskite CsPbBr3 shows great potential in laser device because of its excellent luminescence characteristics, while the room temperature amplified spontaneous emission (ASE) in a large size CsPbBr3 bulk single crystal is still quite difficult. Herein, we have obtained the room temperature ASE in a sub-centimeter size CsPbBr3 bulk single crystal pumped with the single-photon excitation. Based on the reproducible light path within the CsPbBr3 bulk single crystal, the photonic feedback between the bottom and top facets naturally enhances the population inversion, which exhibits an amplified spontaneous emission threshold of ∼320 µJ/cm2. The blue shift of the ASE peak along with the increased pumping intensity is also observed and ascribed to the reduction of the refractive index and the energy band filling effect. These findings demonstrate the sub-centimeter size CsPbBr3 bulk single crystal to be an excellent candidate as an optical gain media for crystal lasers.

Cavity Lasing Characteristics of Thioflavin T and Thioflavin X in Different Solvents and Their Interaction with DNA for the Controlled Reduction of a Light Amplification Threshold in Solid-State Biofilms.

The lasing characteristics of Thioflavin T (ThT) and Thioflavin X (ThX) dyes were investigated in solvents with increasing viscosity: water, ethanol, butanol, ethylene glycol, and glycerol and three forms of DNA (double-helix natural, fragmented, and aggregated). The results identified that lasing thresholds and photostability depend on three critical factors: the solvation shell surrounding dye molecules, the organization of their dipole moments, which is driven by the DNA structure, and the molecules diffusion coefficient in the excitation focal spot. The research highlights that dye doped to DNA accumulated in binding sites fosters long-range dye orientation, facilitating a marked reduction of lasing thresholds in the liquid phase as well as amplified spontaneous emission (ASE) thresholds in the solid state. Leveraging insights from lasing characteristics obtained in liquid, ASE in the solid state was optimized in a controlled way by changing the parameters influencing the DNA structure, i.e., magnesium salt addition, heating, and sonication. The modifications led to a large decrease in the ASE thresholds in the dye-doped DNA films. It was shown that the examination of lasing in cavities can be useful for preparing optical materials with improved architectures and functionalities for solid-state lasers.

Room-temperature growth of perovskite single crystals via antisolvent-assisted confinement for high-performance electroluminescent devices

Organic-inorganic halide perovskite single crystals (OIHP-SCs) are promising light-emitting materials for bright electroluminescence (EL) devices due to their superior optoelectronic properties and excellent stability. However, the conventional high-temperature growth methods will inevitably disturb the ordered growth and introduce massive defects in OIHP-SCs, leading to the degradation of device performance. The preparation of thin OIHP-SCs with low trap-state densities for high-performance EL devices remains a formidable challenge. Here, we develop an efficient antisolvent-assisted confined growth (AACG) method for the room-temperature growth of formamidinium lead bromide (FAPbBr3) perovskite SCs. An antisolvent vapour environment is intentionally introduced in the spatially confined growth process to lower the free energy barrier for nucleation, enabling the growth of high-quality FAPbBr3 SCs at room temperature. Consequently, FAPbBr3 SCs with ultralow trap-state density of 2.15 × 109 cm−3 and amplified spontaneous emission (ASE) threshold of 7.1 µJ cm−2 could be achieved, representing the best results ever reported for FAPbBr3 SCs. By leveraging the high crystal quality of FAPbBr3 SCs, SC-based perovskite light-emitting diodes (PeLEDs) with a high luminance of over 26,000 cd m−2 and a peak current efficiency (CE) of 13.02 cd A−1 are demonstrated. Our work opens up new opportunities for the development of high-performance EL devices based on OIHP-SCs.

The enhanced properties of amplified spontaneous emission and organic light emitting diodes based on Ag NPs doped hole transfer layer

The organic semiconductor lasers (OSLs) have been seen as a promising light source for future applications. Lower amplified spontaneous emission (ASE) threshold of the organic gain medium and optimized device structures are key factors to realize electrically pumped OSLs. In this paper, the silver nanoparticles (Ag NPs) doped PEDOT: PSS buffer layer was used to improve the ASE performance of BUBD-1 molecule and the optoelectronic performance of the corresponding organic light-emitting diodes (OLEDs). Compared with the reference device with pure PEDOT: PSS buffer layer, the lowest ASE threshold was obtained in CBP: 45 wt%BUBD-1 blend film at the optimal volume ratio 1:3 of PEDOT: PSS: Ag NPs, decreased by 6 times. Then the Ag NPs doped PEDOT: PSS buffer layer was used as both buffer layer and the hole transport layer in the OLEDs devices with CBP: 45 wt% BUBD-1 blend films as the emission layer. At the optimal volume ratio of PEDOT: PSS to Ag NPs, the maximum brightness increased more than 2 times to 7823 cd/m2, and the maximum EQE increased nearly 2 times to 2.81%. The improved ASE performance of CBP: 45 wt%BUBD-1 blend films and optoelectronic properties of corresponding OLED devices can be attributed to both the localized surface plasmon resonance (LSPR) effect and the increased hole mobility caused by the addition of Ag NPs. The introduction of Ag NPs to the hole transfer layer of OLED devices may provide a potential method to realize the electrically pumped OSLs with the planar structures.

High Q‐Factor and Low Threshold Continuous‐Wave Near‐Infrared Lasing with Quasi‐2D Perovskites

AbstractQuasi‐2D perovskites have shown great potential in achieving solution‐processed electrically pumped laser diodes due to their multiple‐quantum‐well structure, which induces a carrier cascade process that can significantly enhance population inversion. However, continuous‐wave (CW) optically pumped lasing has yet to be achieved with near‐infrared (NIR) quasi‐2D perovskites due to the challenges in obtaining high‐quality quasi‐2D films with suitable phase distribution and morphology. This study regulates the crystallization of a NIR quasi‐2D perovskite ((NMA)2FAn−1PbnI3n+1) using an 18‐crown‐6 additive, resulting in a compact and smooth film with a largely improved carrier cascade efficiency. The amplified spontaneous emission threshold of the film is reduced from 47.2 to 35.9 µJ cm−2. Furthermore, by combining the film with a high‐quality distributed feedback grating, this study successfully realizes a CW NIR laser of 809 nm at 110 K, with a high Q‐factor of 4794 and a low threshold of 911.6 W cm−2. These findings provide an important foundation for achieving electrically pumped laser diodes based on the unique quasi‐2D perovskites.

Transport layer engineering towards lower threshold for perovskite lasers.

Charge transport layers are essential for achieving electrically pumped perovskite lasers. However, their role in perovskite lasing is not fully understood. Here, we explore the role of charge transport layers on the lasing actions of perovskite films by investigating the amplified spontaneous emission (ASE) thresholds. We demonstrate a largely reduced ASE threshold and enhanced ASE intensity by introducing an additional hole transport layer poly(triaryl amine) (PTAA). We show that the key role of the PTAA layer is to accelerate the hot carrier cooling process by extracting holes in perovskites. With reduced hot holes, the Auger recombination loss is largely suppressed, resulting in decreased ASE threshold. Our argument is further supported by the fact that the ASE threshold can be further reduced from 25.7 to 7.2 μJ/cm2 upon switching the pumping wavelength from 400nm to 500nm to directly avoid excess hot hole generation. Our work for the first time exemplifies how to further reduce the ASE threshold with transport layer engineering through hot hole manipulation. This is critical to maintaining the excellent gain properties of perovskites when integrating them into electrical devices, paving the way for electrically pumped perovskite lasers. This article is protected by copyright. All rights reserved.

Investigation of the Amplified Spontaneous Emission Threshold of Cesium Lead Bromide Perovskite Quantum Dots at Different Excitation Wavelengths

The goal of this research is to see how excitation wavelength affects steady-state photoluminescence (PL), time-resolved photoluminescence (TRPL), and amplified spontaneous emission (ASE) in CsPbBr3 perovskite quantum dots (PQD). At PL and ASE, a plausible mechanism for explaining the excitation wavelength-dependent phenomena was proposed. The PL and ASE properties of CsPbBr3 PQD as optical materials were examined experimentally at excitation wavelengths of 355–450 nm. An optical parametric amplifier system was used to accomplish optical pumping utilizing a laser pulse with a pulse duration of 70 ps. The ASE threshold was explored and compared the ratio of photons in the pump pulse to band gap energies. The excitation wavelength (λ ex) has a considerable influence on the ASE behavior, with high optical densities correlating to optimal excitation, as evidenced by the absorption spectrum, which has a larger absorption coefficient. Furthermore, the energy density at the ASE threshold was closely correlated with the λ ex following the absorption spectrum. Also, it has been demonstrated that changing the excitation wavelength reduces the PQD PL lifetime. Finally, electron-hole pairs can be produced at a reasonable depth from the film’s surface using the appropriate excitation wavelength.

Dependence of Amplified Spontaneous Emission Threshold on Atmosphere in Whispering Gallery Mode Resonators Including 1,3-Diphenylisobenzofuran as a Singlet Fission Material

Dependence of Amplified Spontaneous Emission Threshold on Atmosphere in Whispering Gallery Mode Resonators Including 1,3-Diphenylisobenzofuran as a Singlet Fission Material

Unusual Spectrally Reproducible and High Q-Factor Random Lasing in Polycrystalline Tin Perovskite Films.

An unusual spectrally reproducible near-IR random lasing (RL) with no fluctuation of lasing peak wavelength is disclosed in polycrystalline films of formamidinium tin triiodide perovskite, which have been chemically stabilized against Sn2+ to Sn4+ oxidation. Remarkably, a quality Q-factor as high as ≈104 with an amplified spontaneous emission (ASE) threshold as low as 2µJcm-2 (both at 20K) are achieved. The observed spectral reproducibility is unprecedented for semiconductor thin film RL systems and cannot be explained by the strong spatial localization of lasing modes. Instead, it is suggested that the spectral stability is a result of such an unique property of Sn-based perovskites as a large inhomogeneous broadening of the emitting centers, which is a consequence of an intrinsic structural inhomogeneity of the material. Due to this, lasing can occur simultaneously in modes that are spatially strongly overlapped, as long as the spectral separation between the modes is larger than the homogeneous linewidth of the emitting centers. The discovered mechanism of RL spectral stability in semiconductor materials, possessing inhomogeneous broadening, opens up prospects for their practical use as cheap sources of narrow laser lines.

Light blue rigid excited-state intramolecular proton transfer organic semiconductor laser chromophores

The effect of excited-state intramolecular proton-transfer (ESIPT) laser material rigidity on photophysical properties and amplified spontaneous emission (ASE) thresholds (EASEth) is studied.

High-performance all-inorganic CsPbBr3 quantum dots with a low-threshold amplified spontaneous emission.

All-inorganic halide perovskite CsPbX3(X = Br/Cl/I)quantum dots have gained a considerable attention in the optoelectronic fields. However, the high cost and poor stability of the prepared CsPbX3 quantum dots (QDs) are inevitable challenges for their future practical applications. And the high-performance CsPbX3 QDs are always needed. Herein, a facile and low-cost synthesis scheme was adopted to prepare the CsPbBr3 QDs modified by lead bromide (PbBr2) and tetraoctylammonium bromide (TOAB) ligands at room temperature in open air. The prepared CsPbBr3 QDs exhibited a high photoluminescence quantum yield (PLQY) of 96.6% and a low amplified spontaneous emission (ASE) threshold of 12.6 µJ/cm2. Stable ASE intensity with little degradation was also realized from the CsPbBr3 QDs doped with PMMA. Furthermore, the enhanced ASE properties of the CsPbBr3 QDs-doped PMMA based on distributed feedback (DFB) substrate was achieved with a lower threshold of 3.6 µJ/cm2, which is 28.6% of that of the (PbBr2 + TOAB)-treated CsPbBr3 QDs without PMMA. This work exhibits a promising potential in the on-chip light source.