High Q‐Factor and Low Threshold Continuous‐Wave Near‐Infrared Lasing with Quasi‐2D Perovskites

Abstract

AbstractQuasi‐2D perovskites have shown great potential in achieving solution‐processed electrically pumped laser diodes due to their multiple‐quantum‐well structure, which induces a carrier cascade process that can significantly enhance population inversion. However, continuous‐wave (CW) optically pumped lasing has yet to be achieved with near‐infrared (NIR) quasi‐2D perovskites due to the challenges in obtaining high‐quality quasi‐2D films with suitable phase distribution and morphology. This study regulates the crystallization of a NIR quasi‐2D perovskite ((NMA)2FAn−1PbnI3n+1) using an 18‐crown‐6 additive, resulting in a compact and smooth film with a largely improved carrier cascade efficiency. The amplified spontaneous emission threshold of the film is reduced from 47.2 to 35.9 µJ cm−2. Furthermore, by combining the film with a high‐quality distributed feedback grating, this study successfully realizes a CW NIR laser of 809 nm at 110 K, with a high Q‐factor of 4794 and a low threshold of 911.6 W cm−2. These findings provide an important foundation for achieving electrically pumped laser diodes based on the unique quasi‐2D perovskites.