The use of high dose Co/sup +/ implantation into hydrogenated amorphous silicon (a-Si:H) deposited on glass has been investigated for the fabrication of low resistivity layers and Schottky devices without the need for high temperature thermal processing. Layer resistivities as low as 10 /spl Omega///spl square/ have been achieved for the as-implanted samples and 3 /spl Omega///spl square/ after annealing at temperatures up to 500/spl deg/C. Quality Schottky devices have been fabricated for implant doses as low as 10/sup 16/ Co/sup +/ cm/sup -2/.