Abstract
AlGaAs/GaAs n-p-n heterojunction bipolar transistors (HBTs) fabricated using an Si-implant to form the subcollector followed by MOCVD growth of the remaining structure are demonstrated. The common emitter current gain of large test devices is /spl sim/50 at a collector current density of 1.9/spl times/10/sup 3/ A/cm/sup 2/. The base-collector and emitter-base current ideality factors are 1.08 and 1.26, respectively. Co-implantation with Se reduced the subcollector sheet resistance to 13 /spl Omega///spl square/. Patterning of this implanted subcollector results in a significant reduction of extrinsic base-collector capacitance (C/sub hc/).
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