Spin-on Glass Films Research Articles

Laser photoablation of spin-on-glass

The photoablation of a phenylsiloxane spin-on-glass (SOG) (Allied Accuglass 204) in the precured state has been studied at 193 and 248 nm using an excimer laser. The ablation of a 400 nm layer of SOG on silicon was monitored interferometrically using a He-Ne laser. At 193 nm, where the absorption coefficient is high, the reflectivity shows the oscillation expected for uniform photoablation at the surface, but the SOG is not completely removed. At 248 nm the SOG film is nearly transparent, and for 0.53 J cm−2 only one shot is required for complete removal. At lower fluences more pulses are required to remove the SOG completely, but the reflectivity does not show the oscillation that would be expected for the uniform removal of material at the surface. The microlithographic capabilities of laser photoablation of SOG were investigated at 248 nm, and lines 2 μm wide with sloping sides 0.2 μm wide were obtained.

Bonding silicon wafer to silicon nitride with spin-on glass as adhesive

Using spin-on glass (SOG) as an adhesive, an Si wafer with thermal oxide was successfully bonded to one with an RF-sputtered Si3N4 film. This ensures that SOG films are effective in bonding Si wafers to less reactive surfaces than Si or SiO2 such as silicon nitride. It was also found that the previously reported bonding procedure can be simplified by suppressing the spin-induced radial striations of the SOG films.

Spin-On Glass Films in Multilevel Ic Interconnection

ABSTRACTAmong the variety of techniques available today for interlevel dielectric planarization, techniques based on spin-on glass (SOG) films are relatively attractive because of process simplicity and minimal equipment requirements. This paper reviews the materials and processes of SOG technology as it is applied in dielectric planarization. The SOG planarization schemes employ SOG films either as a permanent part of the interlevel insulation layer or as a sacrificial layer in the ‘etch-back” techniques. The properties of the various types of comnircially available SOG materials are discussed in relation to their functional and processing characteristics.