Abstract
Using spin-on glass (SOG) as an adhesive, an Si wafer with thermal oxide was successfully bonded to one with an RF-sputtered Si3N4 film. This ensures that SOG films are effective in bonding Si wafers to less reactive surfaces than Si or SiO2 such as silicon nitride. It was also found that the previously reported bonding procedure can be simplified by suppressing the spin-induced radial striations of the SOG films.
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