Spin-transfer Torque Random Access Memory Designs Research Articles

TriZone: A Design of MLC STT-RAM Cache for Combined Performance, Energy, and Reliability Optimizations

Spin-transfer torque random access memory (STT-RAM) is a promising technology for future nonvolatile caches and memories. To increase the storage density, multilevel cell (MLC) technique was recently introduced to STT-RAM designs at the cost of degraded access speed, reliability, and energy efficiency. Existing MLC STT-RAM cache architectures primarily focus on the performance and energy optimizations but ignore the crucial demand for reliability. In this paper, we propose “TriZone”—a holistic design scheme for MLC STT-RAM cache to simultaneously meet the requirements of performance, energy, and reliability. Three cache block configurations, namely hard, soft, and mixed, are constructed with the hard-bit, soft-bit, and both hard-bit and soft-bit of MLC STT-RAM, respectively. By observing the difference of these cache blocks, a nonuniform strength ECC (NUS-ECC) is developed to guarantee the operational reliability of a cache block with a variable decoding delay adapting to the needs of error correction (e.g., the number of the erroneous bits). The whole MLC STT-RAM cache is then partitioned into three regions, each of which is composed of different cache blocks. In order to achieve the best tradeoff among performance, energy, and reliability, we then introduce the dynamic cache partitioning to determine the partition of this tri-way MLC STT-RAM cache according to the runtime characteristic of various applications. Experiment results show that compared with conventional performance-driven MLC STT-RAM cache design with pessimistic ECC, TriZone can improve the system performance and energy by averagely 11.7% (10.0%) and 13.3% (15.7%), respectively, for single-threaded (multiprogram) applications. The additional area overhead associated with NUS-ECC is limited by ~ 3%.

Efficient LDPC Code Design for Combating Asymmetric Errors in STT-RAM

Spin-transfer torque random access memory (STT-RAM) is a promising emerging memory technology in the future memory hierarchy. However, its unique reliability challenges, i.e., the asymmetric bit failure mechanism at different bit flippings, have raised significant concerns in its real applications. Recent studies even show that the common memory error repair “remedies” cannot efficiently address them. In this article, we for the first time systematically study the potentials of the strong low-density parity-check (LDPC) code for combating such unique asymmetric errors in both single-level-cell (SLC) and multi-level-cell (MLC) STT-RAM designs. A generic STT-RAM channel model suitable for the SLC/MLC designs, is developed to analytically calibrate all the accumulated asymmetric factors of the write/read operations. The key initial information for LDPC decoding, namely asymmetric log-likelihood ratio (A-LLR), is redesigned and extracted from the proposed channel model, to unleash the LDPC’s asymmetric error correcting capability. LDPC codec is also carefully designed to lower the hardware cost by leveraging the systematic-structured parity check matrix. Then two customized short-length LDPC codes—(585,512) and (683,512)—augmented from the semi-random parity check matrix and the A-LLR based asymmetric decoding, are proposed for SLC and MLC STT-RAM designs, respectively. Experiments show that our proposed LDPC designs can improve the STT-RAM reliability by at least 10 2 (10 4 ) when compared to the existing error correction codes (ECCs) for the SLC (MLC) design, demonstrating the feasibility of LDPC solutions on STT-RAM.

Persistent and Nonpersistent Error Optimization for STT-RAM Cell Design

Rapidly increasing demands for memory capacity and severe technical scaling challenges of conventional memory technologies motivated recent investments on next-generation nonvolatile memory technologies. As a promising candidate, spin-transfer torque random access memory (STT-RAM) has demonstrated many attractive properties, such as nanosecond access time, high integration density, nonvolatility, and excellent CMOS integration compatibility. However, similar to all other nano-devices, the performance and reliability of STT-RAM cells are greatly affected by process variations, device operating uncertainties, and environmental fluctuations. As a result, the read and write operations of STT-RAM demonstrate some variabilities and errors. In this paper, we systematically analyze the impacts of CMOS and magnetic tunneling junction (MTJ) process variations, MTJ resistance switching randomness that are induced by intrinsic thermal fluctuations, and working temperature changes on STT-RAM cell designs. The STT-RAM cell reliability issues in both read and write operations are first investigated. A combined circuit and magnetic simulation platform is then established to quantitatively study the persistent and nonpersistent errors in STT-RAM cell operations. Our analysis proved the importance of a full statistical design method in STT-RAM designs for design pessimism minimization.

Giant Spin-Hall assisted STT-RAM and logic design

In recent years, Spin-Transfer Torque Random Access Memory (STT-RAM) has attracted significant attentions from both industry and academia due to its attractive attributes such as small cell area and non-volatility. However, long switching time and large programming energy of Magnetic Tunneling Junction (MTJ) continue being major challenges in STT-RAM designs. In order to overcome this problem, a Giant Spin-Hall Effect (GSHE) assisted STT-RAM structure (GSHE-RAM) has been recently invented. In this work, we investigate logic gates by using GSHE MTJs and two possible GSHE-RAM designs from the aspects of two different write access operations, namely, High Density GSHE-RAM and Disturbance Free GSHE-RAM, respectively. In High Density GSHE-RAM, GSHE current is shared by the entire bit line. Such a structure removes the GSHE control transistor from each GSHE-RAM cell and hence, substantially reduces the memory cell area. In Disturbance Free GSHE-RAM, one memory cell contains two transistors to remove the disturbance to the unselected bits and eliminate the possible erroneous flipping of the bits. In addition to memory designs, we also investigate logic gates by using GSHE MTJs. By leveraging the benefit of greater power efficiency and area density, GSHE MTJ elements become a suitable candidate for spintronic logic gates. Compare with traditional MOS transistors based logic gates, GSHE MTJ based logic can operate as a non-volatile memory and requires a much smaller number of elements to perform same logical operations (i.e., ‘AND’, ‘OR’, ‘NAND’ or ‘NOR’ gate.). And compare with other spin based logics, GSHE MTJ based logic also provides an better performance, excellent CMOS process compatibility and great fan-out ability.

PS3-RAM: A Fast Portable and Scalable Statistical STT-RAM Reliability/Energy Analysis Method

The development of emerging spin-transfer torque random access memory (STT-RAM) is facing two major technical challenges-poor write reliability and high write energy, both of which are severely impacted by process variations and thermal fluctuations. The evaluations on STT-RAM design metrics and robustness often require a hybrid simulation flow, i.e., modeling the CMOS and magnetic devices with SPICE and macro-magnetic models, respectively. Very often, such a hybrid simulation flow involves expensive Monte Carlo simulations when the design and behavioral variabilities of STT-RAM are taken into account. In this paper, we propose a fast and scalable semi-analytical method-PS3-RAM, enabling efficient statistical simulations in STT-RAM designs. By eliminating the costly macro-magnetic and SPICE simulations, PS3-RAM achieves more than 100\(000\boldsymbol {\times }\) runtime speedup with excellent agreement with the result of conventional simulation method. PS3-RAM can also accurately estimate the STT-RAM write error rate and write energy distributions at both magnetic tunneling junction switching directions under different temperatures, demonstrating great potential in the analysis of STT-RAM reliability and write energy at the early design stage of memory or micro-architecture.

STT-RAM Cell Optimization Considering MTJ and CMOS Variations

Spin-transfer torque random access memory (STT-RAM) becomes a promising technology for future computing systems for its fast access time, high density, nonvolatility, and small write current. However, like all the other nanotechnologies, STT-RAM suffers from process variations and environment fluctuations, which significantly affect the performance and stability of magnetic tunneling junction (MTJ) devices. In this study, we combine magnetic and circuit simulations to quantitatively analyze the impacts of MTJ and CMOS variations on the STT-RAM designs. Both bit-to-bit and cycle-by-cycle variations are considered. A robust STT-RAM design flow is also proposed.