Spin Quantum Bits Research Articles

Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate

Silicon quantum dot (QD) devices with a proximal single-electron transistor (SET) charge sensor have been fabricated in a metal-oxide-semiconductor structure based on a silicon-on-insulator substrate. The charge state of the QDs was clearly read out using the charge sensor via the SET current. The lithographically defined small QDs enabled clear observation of the few-electron regime of a single QD and a double QD by charge sensing. Tunnel coupling on tunnel barriers of the QDs can be controlled by tuning the top-gate voltages, which can be used for manipulation of the spin quantum bit via exchange interaction between tunnel-coupled QDs. The lithographically defined silicon QD device reported here is technologically simple and does not require electrical gates to create QD confinement potentials, which is advantageous for the integration of complicated constructs such as multiple QD structures with SET charge sensors for the purpose of spin-based quantum computing.

Isolating electrons on superfluid helium

Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin quantum bits (qubits). Transferring electrons extremely efficiently in a narrow channel structure with underlying gates has been demonstrated, showing no transfer error while clocking 109 pixels in a 3-phase charge coupled device (CCD). While on average, one electron per channel was clocked, it is desirable to reliably obtain a single electron per channel. We have designed an electron turnstile consisting of a narrow (0.8μm) channel and narrow underlying gates (0.5μm) operating across seventy-eight parallel channels. Initially, we find that more than one electron can be held above the small gates. Underlying gates in the turnstile region allow us to repeatedly split these electron packets. Results show a plateau in the electron signal as a function of the applied gate voltages, indicating quantization of the number of electrons per pixel, simultaneously across the seventy-eight parallel channels.

Isotope engineering of silicon and diamond for quantum computing and sensing applications

AbstractSome of the stable isotopes of silicon and carbon have zero nuclear spin, whereas many of the other elements that constitute semiconductors consist entirely of stable isotopes that have nuclear spins. Silicon and diamond crystals composed of nuclear-spin-free stable isotopes (28Si,30Si, or12C) are considered to be ideal host matrixes to place spin quantum bits (qubits) for quantum-computing and -sensing applications, because their coherent properties are not disrupted thanks to the absence of host nuclear spins. The present paper describes the state-of-the-art and future perspective of silicon and diamond isotope engineering for development of quantum information-processing devices.

Experimental realization of universal geometric quantum gates with solid-state spins.

Experimental realization of a universal set of quantum logic gates is the central requirement for the implementation of a quantum computer. In an 'all-geometric' approach to quantum computation, the quantum gates are implemented using Berry phases and their non-Abelian extensions, holonomies, from geometric transformation of quantum states in the Hilbert space. Apart from its fundamental interest and rich mathematical structure, the geometric approach has some built-in noise-resilience features. On the experimental side, geometric phases and holonomies have been observed in thermal ensembles of liquid molecules using nuclear magnetic resonance; however, such systems are known to be non-scalable for the purposes of quantum computing. There are proposals to implement geometric quantum computation in scalable experimental platforms such as trapped ions, superconducting quantum bits and quantum dots, and a recent experiment has realized geometric single-bit gates in a superconducting system. Here we report the experimental realization of a universal set of geometric quantum gates using the solid-state spins of diamond nitrogen-vacancy centres. These diamond defects provide a scalable experimental platform with the potential for room-temperature quantum computing, which has attracted strong interest in recent years. Our experiment shows that all-geometric and potentially robust quantum computation can be realized with solid-state spin quantum bits, making use of recent advances in the coherent control of this system.

Silicon quantum electronics

This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps include the isolation of single electrons, the observation of spin blockade and single-shot read-out of individual electron spins in both dopants and gated quantum dots in Si. Each of these results has come with physics that was not anticipated from previous work in other material systems. These advances underline the significant progress towards the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics.

Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas

We directly measure the band structure of a buried two dimensional electron gas (2DEG) using angle resolved photoemission spectroscopy. The buried 2DEG forms 2 nm beneath the surface of p-type silicon, because of a dense delta-type layer of phosphorus n-type dopants which have been placed there. The position of the phosphorous layer is beyond the probing depth of the photoemission experiment but the observation of the 2DEG is nevertheless possible at certain photon energies where emission from the states is resonantly enhanced. This permits direct access to the band structure of the 2DEG and its temperature dependence.

Room-temperature entanglement between single defect spins in diamond

Entanglement is the central yet fleeting phenomena of quantum physics. Once being considered a peculiar counter-intuitive property of quantum theory it has developed into the most central element of quantum technology providing speed up to quantum computers, a path towards long distance quantum cryptography and increased sensitivity in quantum metrology. Consequently, there have been a number of experimental demonstration of entanglement between photons, atoms, ions as well as solid state systems like spins or quantum dots, superconducting circuits and macroscopic diamond. Here we experimentally demonstrate entanglement between two engineered single solid state spin quantum bits (qubits) at ambient conditions. Photon emission of defect pairs reveals ground state spin correlation. Entanglement (fidelity = 0.67 \pm 0.04) is proven by quantum state tomography. Moreover, the lifetime of electron spin entanglement is extended to ms by entanglement swapping to nuclear spins, demonstrating nuclear spin entanglement over a length scale of 25 nm. The experiments mark an important step towards a scalable room temperature quantum device being of potential use in quantum information processing as well as metrology.

Observation of entanglement between a quantum dot spin and a single photon

Entanglement has a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, a main challenge is the efficient generation of entanglement between stationary (spin) and propagating (photon) quantum bits. Here we report the observation of quantum entanglement between a semiconductor quantum dot spin and the colour of a propagating optical photon. The demonstration of entanglement relies on the use of fast, single-photon detection, which allows us to project the photon into a superposition of red and blue frequency components. Our results extend the previous demonstrations of single-spin/single-photon entanglement in trapped ions, neutral atoms and nitrogen-vacancy centres to the domain of artificial atoms in semiconductor nanostructures that allow for on-chip integration of electronic and photonic elements. As a result of its fast optical transitions and favourable selection rules, the scheme we implement could in principle generate nearly deterministic entangled spin-photon pairs at a rate determined ultimately by the high spontaneous emission rate. Our observation constitutes a first step towards implementation of a quantum network with nodes consisting of semiconductor spin quantum bits.

Coherent singlet-triplet oscillations in a silicon-based double quantum dot

Silicon is more than the dominant material in the conventional microelectronics industry: it also has potential as a host material for emerging quantum information technologies. Standard fabrication techniques already allow the isolation of single electron spins in silicon transistor-like devices. Although this is also possible in other materials, silicon-based systems have the advantage of interacting more weakly with nuclear spins. Reducing such interactions is important for the control of spin quantum bits because nuclear fluctuations limit quantum phase coherence, as seen in recent experiments in GaAs-based quantum dots. Advances in reducing nuclear decoherence effects by means of complex control still result in coherence times much shorter than those seen in experiments on large ensembles of impurity-bound electrons in bulk silicon crystals. Here we report coherent control of electron spins in two coupled quantum dots in an undoped Si/SiGe heterostructure and show that this system has a nuclei-induced dephasing time of 360 nanoseconds, which is an increase by nearly two orders of magnitude over similar measurements in GaAs-based quantum dots. The degree of phase coherence observed, combined with fast, gated electrical initialization, read-out and control, should motivate future development of silicon-based quantum information processors.

One- and two-dimensional photonic crystal microcavities in single crystal diamond

Diamond is an attractive material for photonic quantum technologies because its colour centres have a number of outstanding properties, including bright single photon emission and long spin coherence times. To take advantage of these properties it is favourable to directly fabricate optical microcavities in high-quality diamond samples. Such microcavities could be used to control the photons emitted by the colour centres or to couple widely separated spins. Here, we present a method for the fabrication of one- and two-dimensional photonic crystal microcavities with quality factors of up to 700 in single crystal diamond. Using a post-processing etching technique, we tune the cavity modes into resonance with the zero phonon line of an ensemble of silicon-vacancy colour centres, and we measure an intensity enhancement factor of 2.8. The controlled coupling of colour centres to photonic crystal microcavities could pave the way to larger-scale photonic quantum devices based on single crystal diamond.

Fast control of nuclear spin polarization in an optically pumped single quantum dot

Highly polarized nuclear spins within a semiconductor quantum dot induce effective magnetic (Overhauser) fields of up to several Tesla acting on the electron spin, or up to a few hundred mT for the hole spin. Recently this has been recognized as a resource for intrinsic control of quantum-dot-based spin quantum bits. However, only static long-lived Overhauser fields could be used. Here we demonstrate fast redirection on the microsecond timescale of Overhauser fields on the order of 0.5 T experienced by a single electron spin in an optically pumped GaAs quantum dot. This has been achieved using coherent control of an ensemble of 10(5) optically polarized nuclear spins by sequences of short radiofrequency pulses. These results open the way to a new class of experiments using radiofrequency techniques to achieve highly correlated nuclear spins in quantum dots, such as adiabatic demagnetization in the rotating frame leading to sub-μK nuclear spin temperatures, rapid adiabatic passage, and spin squeezing.

Spin Quantum Bit with Ferromagnetic Contacts for Circuit QED

We theoretically propose a scheme for a spin quantum bit based on a double quantum dot contacted to ferromagnetic elements. Interface exchange effects enable an all electric manipulation of the spin and a switchable strong coupling to a superconducting coplanar waveguide cavity. Our setup does not rely on any specific band structure and can in principle be realized with many different types of nanoconductors. This allows us to envision on-chip single spin manipulation and readout using cavity QED techniques.

Novel Quantum Phenomena in Carbon Nanotubes; Superconductivity, One-Dimensional Electron Correlations, and Spin Quantum Bits

Novel Quantum Phenomena in Carbon Nanotubes; Superconductivity, One-Dimensional Electron Correlations, and Spin Quantum Bits

Building a spin quantum bit register using semiconductor nanowires

This paper reviews recent advances in engineering spin quantum bits (qubits) insemiconductor quantum dots and describes an approach based on top-gated semiconductornanowire devices. Fast electrical single-spin manipulation is achievable, in principle, usingthe spin–orbit interaction intrinsic to III–V materials, such as InAs, in concert with ACelectric fields. Combined with sub-nanosecond gate control of the nearest-neighborexchange interaction and spin readout by spin-to-charge conversion, a fully electricalsolid-state quantum processor is within reach. We outline strategies for spin manipulation,robust readout and mitigation of decoherence due to nuclear fields that, when combined ina single device, should give a viable multi-qubit testbed and a building block for largerscale quantum devices.

Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers toward donor qubits in silicon

We report on the fabrication of transistors in a FinFET geometry using isotopically purified silicon-28-on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual 29Si nuclear spin bath, making isotopically enriched nuclear spin-free 28Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.

Coherence of an Optically Illuminated Single Nuclear Spin Qubit

We investigate the coherence properties of individual nuclear spin quantum bits in diamond [Dutt, Science 316, 1312 (2007)10.1126/science.1139831] when a proximal electronic spin associated with a nitrogen-vacancy (N-V) center is being interrogated by optical radiation. The resulting nuclear spin dynamics are governed by time-dependent hyperfine interaction associated with rapid electronic transitions, which can be described by a spin-fluctuator model. We show that due to a process analogous to motional averaging in nuclear magnetic resonance, the nuclear spin coherence can be preserved after a large number of optical excitation cycles. Our theoretical analysis is in good agreement with experimental results. It indicates a novel approach that could potentially isolate the nuclear spin system completely from the electronic environment.

Interplay and optimization of decoherence mechanisms in the optical control of spin quantum bits implemented on a semiconductor quantum dot

We study the influence of the environment on an optically induced rotation of a single electron spin in a charged semiconductor quantum dot. We analyze the decoherence mechanisms resulting from the dynamical lattice response to the charge evolution induced in a trion-based optical spin control scheme. Moreover, we study the effect of the finite trion lifetime and of the imperfections of the unitary evolution such as off-resonant excitations and the nonadiabaticity of the driving. We calculate the total error of the operation on a spin-based qubit in an $\mathrm{In}\mathrm{As}∕\mathrm{Ga}\mathrm{As}$ quantum dot system and discuss possible optimization against the different contributions. We indicate the parameters which allow for coherent control of the spin with a single qubit gate error as low as ${10}^{\ensuremath{-}4}$.

Quantum Register Based on Individual Electronic and Nuclear Spin Qubits in Diamond

The key challenge in experimental quantum information science is to identify isolated quantum mechanical systems with long coherence times that can be manipulated and coupled together in a scalable fashion. We describe the coherent manipulation of an individual electron spin and nearby individual nuclear spins to create a controllable quantum register. Using optical and microwave radiation to control an electron spin associated with the nitrogen vacancy (NV) color center in diamond, we demonstrated robust initialization of electron and nuclear spin quantum bits (qubits) and transfer of arbitrary quantum states between them at room temperature. Moreover, nuclear spin qubits could be well isolated from the electron spin, even during optical polarization and measurement of the electronic state. Finally, coherent interactions between individual nuclear spin qubits were observed and their excellent coherence properties were demonstrated. These registers can be used as a basis for scalable, optically coupled quantum information systems.

Optically programmable electron spin memory using semiconductor quantum dots

The spin of a single electron subject to a static magnetic field provides a natural two-level system that is suitable for use as a quantum bit, the fundamental logical unit in a quantum computer. Semiconductor quantum dots fabricated by strain driven self-assembly are particularly attractive for the realization of spin quantum bits, as they can be controllably positioned, electronically coupled and embedded into active devices. It has been predicted that the atomic-like electronic structure of such quantum dots suppresses coupling of the spin to the solid-state quantum dot environment, thus protecting the 'spin' quantum information against decoherence. Here we demonstrate a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation. We use the device to prepare single electron spins in semiconductor quantum dots with a well defined orientation, and directly measure the intrinsic spin flip time and its dependence on magnetic field. A very long spin lifetime is obtained, with a lower limit of about 20 milliseconds at a magnetic field of 4 tesla and at 1 kelvin.

Controlling a mesoscopic spin environment by quantum bit manipulation.

We present a unified description of cooling and manipulation of a mesoscopic bath of nuclear spins via coupling to a single quantum system of electronic spin (quantum bit). We show that a bath cooled by the quantum bit rapidly saturates. Although the resulting saturated states of the spin bath ("dark states") generally have low degrees of polarization and purity, their symmetry properties make them a valuable resource for the coherent manipulation of quantum bits. Specifically, we demonstrate that the dark states of nuclear ensembles can be used to coherently control the system-bath interaction and to provide a robust, long-lived quantum memory for qubit states.