Spin-polarized Charge Currents Research Articles

Tuning terahertz emission generated by anomalous Nernst effect in ferromagnetic metal

Despite intensive research, the mechanism determining the terahertz (THz) emission of the ferromagnetic (FM) metallic monolayers remains elusive. Here, we report on the results of a systematic investigation on the THz emission generated by pumping Ni80Fe20 monolayers on Al2O3 substrates with a femtosecond laser. We found solid evidence that the THz emission is dominated by the anomalous Nernst effect (ANE), in which a transient spin-polarized charge current can be induced by an ultrafast electron temperature gradient on the picosecond timescale, outputting THz emission. We found a polarity reversal of the THz waveform after the introduction of a SiO2 buffer layer to the sample and found that, based on ultrafast temperature simulation, it was a consequence of direction reversal of temperature gradient. Comparing the THz emission of different FM monolayers further confirms that the THz polarity also strongly depends on the sign of the ANE coefficient. These phenomena unambiguously indicate that the ANE plays a decisive role in the process of THz emission. The present work shows the importance of ultrafast spin caloritronics for a spintronic THz emitter. The principle demonstrated here can be applied to other FM metallic materials.

Spin transport modified by magnetic order

Spintronics has developed over the years from initially generating spin-polarized charge currents from exchange interaction in ferromagnets, into a more general concept, where electronic spin current can be generated and manipulated by spin–orbit interactions and in addition magnonic spin currents can occur in magnetically ordered materials even if they are insulating. Thus the interplay between spin transport and magnetic order has been a very active research field, which has developed many new ideas, such as thermal spin transport and electronic spin currents with unusual symmetries generated by magnetically ordered materials. This article discusses a few selected examples in order to illustrate some of the complexities that can be encountered in these systems. A particular focus is on the contributions from Chia-Ling Chien and his research group, who often explored many of the topics at the forefront of spintronics research, while critically examining unproven assumptions made by other researchers in the field.

Rectification of the spin Seebeck current in noncollinear antiferromagnets

In the absence of an external magnetic field and a spin-polarized charge current, an antiferromagnetic system supports two degenerate magnon modes. An applied thermal bias activates the magnetic dynamics, leading to a magnon flow from the hot to the cold edge (magnonic spin Seebeck current). Both degenerate bands contribute to the magnon current but the orientations of the magnetic moments underlying the magnons are opposite in different bands. Therefore, while the magnon current is nonzero, the net spin current is zero. To obtain a nonzero net spin current, one needs to apply either a magnetic field or a spin-polarized charge current that lifts the bands' degeneracy. Here, attaching a thermal contact to one edge of a helical nanowire, we study three different magnonic spin currents: (i) the exchange, and (ii) Dzyaloshinskii--Moriya spin currents flowing along the helical nanowire, and (iii) magnonic spin current pumped into the adjacent normal-metal layer. We find that the combination of Dzyaloshinskii--Moriya interaction and external magnetic field substantially enhances the spin current compared to the current generated solely through a magnetic field. Due to nonreciprocal magnons and magnon dichroism effect, the Dzyaloshinskii--Moriya and exchange spin currents show left-right propagation asymmetry, with $20%$ of current rectification. The spin pumping current shows a slight asymmetry only in the case of a strong Dzyaloshinskii--Moriya interaction. The observed effects are explained in terms of the magnon dispersion relations and the magnon Doppler effect.

Giant spin signals in chemically functionalized multiwall carbon nanotubes.

Transporting quantum information such as the spin information over micrometric or even millimetric distances is a strong requirement for the next-generation electronic circuits such as low-voltage spin-logic devices. This crucial step of transportation remains delicate in nontopologically protected systems because of the volatile nature of spin states. Here, a beneficial combination of different phenomena is used to approach this sought-after milestone for the beyond-Complementary Metal Oxide Semiconductor (CMOS) technology roadmap. First, a strongly spin-polarized charge current is injected using highly spin-polarized hybridized states emerging at the complex ferromagnetic metal/molecule interfaces. Second, the spin information is brought toward the conducting inner shells of a multiwall carbon nanotube used as a confined nanoguide benefiting from both weak spin-orbit and hyperfine interactions. The spin information is finally electrically converted because of a strong magnetoresistive effect. The experimental results are also supported by calculations qualitatively revealing exceptional spin transport properties of this system.

Water Splitting Devices: Photon‐Induced Spintronic Polaron Channel Modulator of CeO2‐x NP Thin Films Hydrogen Evolution Cells (Adv. Electron. Mater. 1/2019)

The O vacancy and Ce ions of CeO2 generate a small polaron at the surface of CeO2 nanoparticles that serves as a charge transportation channel. In article number 1800570, Yi-Sheng Lai and Yen-Hsun Su succeed in generating spin-polarized charge currents under coherent angular momentum light injection. Without using spin orbital coupling in electrodes, a photogalvanic spin battery is achieved. The polaron modulated spintronic electrons are successfully applied in hydrogen evolution devices, serving as a photogalvanic spin small-polaron cell.

Modeling all-electrical detection of the inverse Edelstein effect by spin-polarized tunneling in a topological-insulator/ferromagnetic-metal heterostructure

The spin-momentum locking of the surface states in a three-dimensional topological insulator (TI) allows a charge current on the surface of the TI induced by an applied spin current onto the surface, which is known as the inverse Edelstein effect (IEE), that could be achieved either by injecting pure spin current by spin-pumping from a ferromagnetic metal (FM) layer or by injecting spin-polarized charge current by direct tunneling of electrons from the FM to the TI. Here, we present a theory of the observed IEE effect in a TI-FM heterostructure for the spin-polarized tunneling experiments. If an electrical current is passed from the FM to the surface of the TI, because of density-of-states polarization of the FM, an effective imbalance of spin-polarized electrons occurs on the surface of the TI. Due to the spin-momentum helical locking of the surface states in the TI, a difference of transverse charge accumulation appears on the TI surface in a direction orthogonal to the direction of the magnetization of the FM, which is measured as a voltage difference. Here, we derive the two-dimensional transport equations of electrons on the surface of a diffusive TI, coupled to a FM, starting from the quantum kinetic equation, and analytically solve the equations for a rectangular geometry to calculate the voltage difference.

Origin and evolution of surface spin current in topological insulators

The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is crucial to maximize the charge-to-spin conversion efficiency. We observe an enhancement of the spin signal due to surface-dominated spin polarization while freezing out the bulk conductivity in semiconducting ${\mathrm{Bi}}_{1.5}{\mathrm{Sb}}_{0.5}{\mathrm{Te}}_{1.7}{\mathrm{Se}}_{1.3}$ below $100\phantom{\rule{0.16em}{0ex}}\mathrm{K}$. Detailed measurements up to room temperature exhibit a strong reduction of the magnetoresistance signal between $2\phantom{\rule{4.pt}{0ex}}\text{and}\phantom{\rule{4.pt}{0ex}}100\phantom{\rule{0.16em}{0ex}}\mathrm{K}$, which we attribute to the thermal excitation of bulk carriers and to the electron-phonon coupling in the surface states. The presence and dominance of this effect up to room temperature is promising for spintronic science and technology.

Controllable persistent spin-polarized charge current in a Rashba ring

We theoretically predict the appearance of a persistent charge current in a Rashba ring with a normal and a ferromagnetic lead under no external bias. This charge current is the result of the breaking of the time inversion symmetry in the original persistent pure spin current induced by the Rashba spin-orbit coupling (RSOC) in the ring due to the existence of the ferromagnetic lead. With the Keldysh Green’s function technique, we find that not only the magnitude and sign but also the spin polarization of the generated charge current is determined by the system parameters such as the magnetization direction of the ferromagnetic lead, the tunneling coefficient, the strength of the RSOC and the exchange energy of the ferromagnetic lead, which are all tunable in experiments, that is, a controllable persistent spin-polarized charge current can be obtained in such a device.

Skyrmion-Anti-Skyrmion Pair Creation by in-Plane Currents.

Magnetic Skyrmions can be considered as localized vortexlike spin textures which are topologically protected in continuous systems. Because of their stability, their small size, and the possibility to move them by low electric currents, they are promising candidates for spintronic devices. Without changing the topological charge, it is possible to create Skyrmion-anti-Skyrmion pairs. We derive a Skyrmion equation of motion which reveals how spin-polarized charge currents create Skyrmion-anti-Skyrmion pairs. It allows us to identify general prerequisites for the pair creation process. We corroborate these general principles by numerical simulations. On a lattice, where the concept of topological protection has to be replaced by that of a finite energy barrier, the anti-Skyrmion partner of the pairs is annihilated and only the Skyrmion survives. This eventually changes the total Skyrmion number and yields a new way of creating and controlling Skyrmions.

Chemical Disorder in Topological Insulators: A Route to Magnetism Tolerant Topological Surface States.

We show that the chemical inhomogeneity in ternary three-dimensional topological insulators preserves the topological spin texture of their surface states against a net surface magnetization. The spin texture is that of a Dirac cone with helical spin structure in the reciprocal space, which gives rise to spin-polarized and dissipation-less charge currents. Thanks to the nontrivial topology of the bulk electronic structure, this spin texture is robust against most types of surface defects. However, magnetic perturbations break the time-reversal symmetry, enabling magnetic scattering and loss of spin coherence of the charge carriers. This intrinsic incompatibility precludes the design of magnetoelectronic devices based on the coupling between magnetic materials and topological surface states. We demonstrate that the magnetization coming from individual Co atoms deposited on the surface can disrupt the spin coherence of the carriers in the archetypal topological insulator Bi2Te3, while in Bi2Se2Te the spin texture remains unperturbed. This is concluded from the observation of elastic backscattering events in quasiparticle interference patterns obtained by scanning tunneling spectroscopy. The mechanism responsible for the protection is investigated by energy resolved spectroscopy and ab initio calculations, and it is ascribed to the distorted adsorption geometry of localized magnetic moments due to Se-Te disorder, which suppresses the Co hybridization with the surface states.

Enhancement of the spin transfer torque efficiency in magnetic STM junctions

We introduce a method for a combined calculation of charge and vector spin transport of elastically tunneling electrons in magnetic scanning tunneling microscopy (STM). The method is based on the three-dimensional Wentzel-Kramers-Brillouin (3D-WKB) approach combined with electronic structure calculations using first principles density functional theory. As an application, we analyze the STM contrast inversion of the charge current above the Fe/W(110) surface depending on the bias voltage, tip-sample distance and relative magnetization orientation between the sample and an iron tip. For the spin transfer torque (STT) vector we find that its in-plane component is generally larger than the out-of-plane component, and we identify a longitudinal spin current component, which, however, does not contribute to the torque. Our results suggest that the torque-current relationship in magnetic STM junctions follows the power law rather than a linear function. Consequently, we show that the ratio between the STT and the spin-polarized charge current is not constant, and more importantly, it can be tuned by the bias voltage, tip-sample distance and magnetization rotation. We find that the STT efficiency can be enhanced by about a factor of seven by selecting a proper bias voltage. Thus, we demonstrate the possible enhancement of the STT efficiency in magnetic STM junctions, which can be exploited in technological applications. We discuss our results in view of the indirect measurement of the STT above the Fe/W(110) surface reported by Krause et al. in Phys. Rev. Lett. 107, 186601 (2011).

Controlling the flow of spin and charge in nanoscopic topological insulators

Controlling the flow of spin and charge currents in topological insulators (TIs) is a crucial requirement for applications in quantum computation and spin electronics. We demonstrate that such control can be established in nanoscopic two-dimensional TIs by breaking their time-reversal symmetry via magnetic defects. This allows for the creation of nearly fully spin-polarized charge currents, and the design of highly tunable spin diodes. Similar effects can also be realized in mesoscale hybrid structures in which TIs interface with ferro- or antiferromagnets.

Giant thermal spin-torque–assisted magnetic tunnel junction switching

Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

Optical studies of ballistic currents in semiconductors [Invited

We present a summary of recent studies of ballistic currents using nonlinear optical techniques. Quantum interference between one- and two-photon absorption pathways is used to inject and control ballistic currents in GaAs samples. With this, a pure charge current, pure spin current, or spin-polarized charge current can be injected by changing the polarization configuration of the two pump pulses. Such currents are temporally and spatially resolved using high-resolution pump–probe techniques, including a derivative-detection scheme, which allows detection of the motion of carriers as small as 0.1 nm. Observation of the intrinsic inverse spin Hall effect in the ballistic regime, a study of time-resolved ballistic spin-polarized charge currents, and a study of the efficiency of spin current injection by quantum interference were all achieved using these techniques. Additionally, we discuss demonstrations of second-order nonlinear optical effects induced by charge and spin currents, which allow for the nondestructive, noninvasive, and real-time imaging of currents.

Shot noise probing of magnetic ordering in zigzag graphene nanoribbons

The nonequilibrium time-dependent fluctuations of charge current have recently emerged as a sensitive experimental tool to probe ballistic transport through evanescent wave functions introduced into clean, wide, and short graphene strips by the attached metallic electrodes. We demonstrate that such ``pseudodiffusive'' shot noise can be substantially modified in zigzag graphene nanoribbon (ZGNR) due to the topology of its edges responsible for localized states that facilitate ferromagnetic ordering along the edge when Coulomb interaction is taken into account. Thus, the shot noise enhancement of unpolarized and even more sensitively of spin-polarized charge currents injected into ZGNR will act as an all-electrical and edge-sensitive probe of such low-dimensional magnetism.

What can we learn about the dynamics of transported spins by measuring shot noise in spin–orbit-coupled nanostructures?

We review recent studies of the shot noise of spin-polarized charge currents and pure spin currents in multiterminal semiconductor nanostructures, while focusing on the effects brought by the intrinsic Rashba spin–orbit (SO) coupling and/or extrinsic SO scattering off impurities in two-dimensional electron gas (2DEG) based devices. By generalizing the scattering theory of quantum shot noise to include the full spin-density matrix of electrons injected from a spin-filtering electrode, we show how decoherence and dephasing in the course of spin precession can lead to the substantial enhancement of the Fano factor (noise-to-current ratio) of spin-polarized charge currents. These processes are suppressed by decreasing the width of the diffusive Rashba wire, so that purely electrical measurement of the shot noise in a ferromagnet|SO-coupled-diffusive-wire|paramagnet setup can quantify the degree of quantum coherence of transported spin through a remarkable one-to-one correspondence between the purity of the spin state and the Fano factor. In four-terminal SO-coupled nanostructures, injection of unpolarized charge current through the longitudinal leads is responsible not only for the pure spin Hall current in the transverse leads, but also for nonequilibrium random time-dependent current fluctuations. The analysis of the shot noise of transverse pure spin Hall current and zero charge current, or transverse spin current and non-zero charge Hall current, driven by unpolarized or spin-polarized injected longitudinal charge current, respectively, reveals a unique experimental tool to differentiate between the intrinsic Rashba and extrinsic SO mechanisms underlying the spin Hall effect in 2DEG devices. When the intrinsic mechanisms responsible for spin precession start to dominate the spin Hall effect, they also enhance the shot noise of transverse spin and charge transport in multiterminal geometries. Finally, we discuss the shot noise of transverse spin and zero charge currents in the quantum-interference-driven spin Hall effect in ballistic four-terminal Aharonov–Casher rings realized using high-mobility 2DEG with the Rashba SO coupling. The modulation of the Rashba coupling by the gate electrode imprints the oscillatory signature of constructive and destructive spin interference around the ring on both the spin and charge shot noise, which differ from the corresponding oscillations of the spin Hall conductance, thereby revealing quantum-interference-driven temporal correlations between spin-resolved charge currents of opposite spins.

Giant spin-accumulation signal and pure spin-current-induced reversible magnetization switching

A key element in spintronics is the spin-transfer effect, by which the magnetization in a nanomagnet can be switched. The effect has already been demonstrated using spin-polarized electrical currents, but now reversible magnetization switching has been achieved using a pure, chargeless spin current. A number of proposed next-generation electronic devices, including novel memory elements1 and versatile transistor circuits2, rely on spin currents, that is, the flow of electron angular momentum. A spin current may interact with a magnetic nanostructure and give rise to spin-dependent transport phenomena, or excite magnetization dynamics1,2,3,4,5,6,7,8,9,10,11. In contrast to a spin-polarized charge current, a pure spin current does not produce any charge-related spurious effects12,13. One way to produce a pure spin current is non-local electrical-spin injection12,13,14,15,16,17,18, but this approach has suffered so far from low injection efficiency. Here, we demonstrate a significant enhancement of the non-local injection efficiency in a lateral spin valve prepared with an entirely in situ fabrication process. Improvements to the interface quality and the device structure lead to an increase of the spin-signal amplitude by an order of magnitude. The generated pure spin current enables the magnetization reversal of a nanomagnet with the same efficiency as in the case of using charge currents. These results are important for further theoretical developments in multi-terminal structures2, but also with a view towards realizing novel devices driven by pure spin currents.

Magnetization Dynamics due to Pure Spin Currents in Magnetic Double Layers

The magnetization dynamics in magnetic double layers is affected by spin-pump and spin-sink effects. So far, only the spin pumping and its effect on the magnetic damping has been studied. However, due to conservation of angular momentum this spin current also leads to magnetic excitation of the layer dissipating this angular momentum. In this Letter we use time resolved magneto-optic Kerr effect to directly show the excitation due to the pure spin current. In particular, we observe magnetization dynamics due to transfer of angular momentum in magnetic double layers. In contrast to other experiments where a spin polarized charge current is passed through a nanomagnet, the effects discussed in this Letter are based on pure spin currents without net transfer of electric charge.

Shot noise of spin-polarized charge currents as a probe of spin coherence in spin-orbit coupled nanostructures

We generalize the scattering theory of quantum shot noise to include the full spin-density matrix of electrons injected from a spin-filtering or ferromagnetic electrode into a quantum-coherent nanostructure governed by various spin-dependent interactions. This formalism yields the spin-resolved shot noise power for different experimental measurement setups--with ferromagnetic source and ferromagnetic or normal drain electrodes--whose evaluation for the diffusive multichannel quantum wires with the Rashba (SO) spin-orbit coupling shows how spin decoherence and dephasing lead to substantial enhancement of charge current fluctuations (characterized by Fano factors $> 1/3$). However, these processes and the corresponding shot noise increase are suppressed in narrow wires, so that charge transport experiments measuring the Fano factor $F_{\uparrow \to \uparrow \downarrow}$ in a ferromagnet/SO-coupled-wire/paramagnet setup also quantify the degree of phase-coherence of transported spin--we predict a one-to-one correspondence between the magnitude of the spin polarization vector and $F_{\uparrow \to \uparrow \downarrow}$.