Spin-orbit Torque Research Articles

Large Field-like Spin-Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo.

Spin-orbit torque magnetic random access memory (SOT-MRAM) has great promise in high write speed and low power consumption. Mo can play a vital role in constructing a CoFeB/MgO-based MRAM cell because of its ability to enhance the perpendicular magnetic anisotropy (PMA), thermal tolerance, and tunneling magnetoresistance. However, Mo is often considered as a less favorable candidate among SOT materials because of its weak spin-orbit coupling. In this study, we experimentally investigate the SOT efficiencies in Mo/CoFeB/MgO heterostructures over a wide range of Mo thicknesses and temperature. Decent damping-like SOT efficiency |ξDL| = 0.015 ± 0.001 and field-like SOT efficiency |ξFL| = 0.050 ± 0.001 are found in amorphous Mo. The ξFL/ξDL ratio is greater than 3. Furthermore, efficient current-induced magnetization switching is demonstrated with the critical current density comparable with heavy metal Ir and W. Our work reveals new understanding and possibilities for Mo as both an SOT source component and PMA buffer layer in the implementation of SOT-MRAMs.

Spin–Orbit Torque Modulated by Interface Chemistry in Topological BiSb/NiFe Bilayers with Titanium Insertion

Spin–Orbit Torque Modulated by Interface Chemistry in Topological BiSb/NiFe Bilayers with Titanium Insertion

Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware

We report a breakthrough in the hardware implementation of energy-efficient all-spin synapse and neuron devices for highly scalable integrated neuromorphic circuits. Our work demonstrates the successful execution of all-spin synapse and activation function generator using domain wall-magnetic tunnel junctions. By harnessing the synergistic effects of spin-orbit torque and interfacial Dzyaloshinskii-Moriya interaction in selectively etched spin-orbit coupling layers, we achieve a programmable multi-state synaptic device with high reliability. Our first-principles calculations confirm that the reduced atomic distance between 5d and 3d atoms enhances Dzyaloshinskii-Moriya interaction, leading to stable domain wall pinning. Our experimental results, supported by visualizing energy landscapes and theoretical simulations, validate the proposed mechanism. Furthermore, we demonstrate a spin-neuron with a sigmoidal activation function, enabling high operation frequency up to 20 MHz and low energy consumption of 508 fJ/operation. A neuron circuit design with a compact sigmoidal cell area and low power consumption is also presented, along with corroborated experimental implementation. Our findings highlight the great potential of domain wall-magnetic tunnel junctions in the development of all-spin neuromorphic computing hardware, offering exciting possibilities for energy-efficient and scalable neural network architectures.

Spin‐Orbit Torque Switching of Magnetization in Ultra‐Thick Ferromagnetic Layers

AbstractCurrent‐induced magnetization switching via spin‐orbit torque (SOT) holds great potential for applications in high‐speed and energy‐efficient magnetic memory and logic devices. In the extensively studied heavy metal/ferromagnet (HM/FM) SOT heterostructures, the thickness of the FM layer is typically restricted to a few nanometers or less due to the rapid spin dephasing, making it challenging to implement thermally stable memory cells with high density. In this study, it is demonstrated that this thickness constraint can be significantly alleviated by utilizing an oxide ferromagnet La0.67Sr0.33MnO3 (LSMO). Through electrical transport and magnetic optical measurements, it is found that the SOT can switch the magnetization in Pt/LSMO heterostructures even at an LSMO thickness of 35 nm, which is one order of magnitude larger than that for metallic FMs, such as CoFeB. Furthermore, based on the FM thickness dependence of the switching current and the domain switching type revealed by magnetic optical Kerr effect imaging (MOKE), a possible picture is proposed to describe the SOT switching in Pt/LSMO, which highlights the critical role of the domain wall propagation in the vertical direction. The work provides valuable insights into the behavior of SOT switching in ultra‐thick FM films, offering new possibilities for their practical applications.

XOR spin logic operated by unipolar current based on field-free spin–orbit torque switching induced by a lateral interface

XOR spin logic operated by unipolar current based on field-free spin–orbit torque switching induced by a lateral interface

Single current control of magnetization in vertical high-aspect-ratio nanopillars on in-plane magnetization layers

Ferromagnetic pillars standing on a substrate hold promise for use in recording segments of multibit nonvolatile memories. These pillars exhibit high thermal stability in their magnetization owing to the influence of shape and perpendicular magnetic anisotropies. Recent micromagnetic simulations have demonstrated the feasibility of magnetization control in these pillars. Such control was achieved through the spin-transfer torque induced by the current flowing within the pillar and the spin-orbit torque generated by the current flowing through the heavy-metal lead at the bottom of the pillars. However, the presence of two current paths complicates circuit design, posing challenges in device integration. To solve this problem, we propose a new structure wherein a pillar is placed on a thin film with in-plane magnetization. When current flows through this structure, a torque is applied to the magnetization of the pillar, similar to that of the three-terminal structure. Magnetization reversal and control in the proposed structure were demonstrated using micromagnetic simulations. Specifically, magnetization reversal was achieved in a 100 nm-long permalloy pillar, whereas the magnetization corresponding to a three-bit sequence was generated in a 250 nm-long permalloy pillar. We propose two methods to control the magnetization of multibit memory. One method uses two different current intensities, whereas the other uses constant and pulsed currents of identical intensity. Notably, in the proposed structure, magnetization was controlled using only a unidirectional current. In particular, magnetization can be controlled with a pulsed current using a single current strength. This advancement will simplify the circuitry required to control magnetic memory, bringing the realization of magnetic memory devices closer to reality.

Antiferromagnetic magnonic charge current generation via ultrafast optical excitation

Néel spin-orbit torque allows a charge current pulse to efficiently manipulate the Néel vector in antiferromagnets, which offers a unique opportunity for ultrahigh density information storage with high speed. However, the reciprocal process of Néel spin-orbit torque, the generation of ultrafast charge current in antiferromagnets has not been demonstrated. Here, we show the experimental observation of charge current generation in antiferromagnetic metallic Mn2Au thin films using ultrafast optical excitation. The ultrafast laser pulse excites antiferromagnetic magnons, resulting in instantaneous non-equilibrium spin polarization at the antiferromagnetic spin sublattices with broken spatial symmetry. Then the charge current is generated directly via spin-orbit fields at the two sublattices, which is termed as the reciprocal phenomenon of Néel spin-orbit torque, and the associated THz emission can be detected at room temperature. Besides the fundamental significance on the Onsager reciprocity, the observed magnonic charge current generation in antiferromagnet would advance the development of antiferromagnetic THz emitter.

Field-free magnetization switching through large out-of-plane spin–orbit torque in the ferromagnetic CoPt single layers

Spin–orbit torque (SOT) induced magnetization switching in an energy-efficient and fast way has exhibited great application potential in next generation magnetic memories. However, a complicated layer structure is usually needed to break the mirror symmetry for achieving SOT induced field-free magnetization switching. Here, we report a sizeable field-free magnetization switching through large out-of-plane SOT in the chemically disordered A1-CoxPt100−x single layers within a Co composition range from 40 to 70. The largest absolute out-of-plane SOT efficiency is found at its equiatomic concentration (Co50Pt50), in which the absolute in-plane SOT efficiency also reaches the maximum value, 22.7 Oe/107 A cm−2. We further demonstrate that the symmetry dependence of field-free magnetization switching might arise from the chemically ordered L11-CoPt nano-scaled platelets formed during the sample deposition. We expect that the experimental identification of the field-free magnetization switching in the ferromagnetic CoPt single layer is desirable to simplify the applications of spin logic devices.

Giant Spin-Orbit Torque in Antiferromagnetic-Coupled Pt/[Co/Gd]N Multilayers with Suppressed Spin Dephasing and Robust Thermal Stability.

Manipulating magnetization via power-efficient spin-orbit torque (SOT) has garnered significant attention in the field of spin-based memory and logic devices. However, the damping-like SOT efficiency (ξDL) in heavy metal (HM)/ferromagnetic metal (FM) bilayers is relatively small due to the strong spin dephasing accompanied by additional spin polarization decay. Furthermore, the perpendicular magnetic anisotropy (PMA) originating from the HM/FM interface is constrained by the thickness of FM, which is unfavorable for thermal stability in practical applications. Consequently, it is valuable to develop systems that not only exhibit large ξDL but also balance thermal stability. In this work, we designed antiferromagnetic-coupled [Co/Gd]N multilayers, where staggered Co and Gd magnetic moments effectively suppress the spin dephasing and additional spin polarization decay. The ordered Co-Gd arrangements along the out-of-plane direction provide bulk PMA, endowing Pt/[Co/Gd]N high thermal stability. The SOT of Pt/[Co/Gd]N was systematically studied with N, demonstrating a significantly large ξDL of up to 0.66. The ξDL of Pt/[Co/Gd]N is greater than those of Pt/Co and Pt/ferrimagnetic alloys. This significant enhancement relies on the effective suppression of spin dephasing in [Co/Gd]N. Our work highlights that the antiferromagnetic-coupled [Co/Gd]N multilayer is a promising candidate for low-consumption and high-density spintronic devices.

Observation of self-induced spin-orbit torques in Ni-Fe layers with a vertical gradient of magnetization

Observation of self-induced spin-orbit torques in Ni-Fe layers with a vertical gradient of magnetization

Comparison of Current Induced Domain Wall Motion Driven by Spin Transfer Torque and by Spin Orbit Torque in Ferrimagnetic GdFeCo Wires

Current-induced domain wall motion (CIDWM) in magnetic wires can be driven by spin transfer torque (STT) originating from transferring angular momentums of spin-polarized conducting electrons to the magnetic DW and can be driven by spin orbit torque (SOT) originating from the spin Hall effect (SHE) in a heavy metal layer and Dzyaloshinsky Moriya (DMI) generated at an interface between a heavy metal layer and a magnetic layer. In this work, we carried out a comparative study of CIDWM driven by STT and by SOT in ferrimagnetic GdFeCo wires with magnetic perpendicular anisotropy based on structures of SiN (10 nm)/GdFeCo (8 nm)/SiN (10 nm) and Pt (5 nm)/GdFeCo (8 nm)/SiN (10 nm). We found that CIDWM driven by SOT exhibited a much lower critical current density (JC), and much higher DW mobility (µDW). Our work might be useful for the realization and the development of low-power and high-speed memory devices.

Spin-Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions.

Spin-orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic random-access memory (SOT-MRAM). Tailoring the SOT vector comprising of antidamping (TAD) and fieldlike (TFL) torques could lead to faster, more reliable, and low-power SOT-MRAM. Here, we establish a method to quantify the longitudinal (TAD) and transverse (TFL) components of the SOT vector and its efficiency χAD and χFL, respectively, in nanoscale three-terminal SOT magnetic tunnel junctions (SOT-MTJ). Modulation of nucleation or switching field (BSF) for magnetization reversal by SOT effective fields (BSOT) leads to the modification of SOT-MTJ hysteresis loop behavior from which χAD and χFL are quantified. Surprisingly, in nanoscale W/CoFeB SOT-MTJ, we find χFL to be (i) twice as large as χAD and (ii) 6 times as large as χFL in micrometer-sized W/CoFeB Hall-bar devices. Our quantification is supported by micromagnetic and macrospin simulations which reproduce experimental SOT-MTJ Stoner-Wohlfarth astroid behavior only for χFL > χAD. Additionally, from the threshold current for current-induced magnetization switching with a transverse magnetic field, we show that in SOT-MTJ, TFL plays a more prominent role in magnetization dynamics than TAD. Due to SOT-MRAM geometry and nanodimensionality, the potential role of nonlocal spin Hall spin current accumulated adjacent to the SOT-MTJ in the mediation of TFL and χFL amplification merits to be explored.

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Spin-orbit torque manipulation of sub-terahertz magnons in antiferromagnetic α-Fe2O3

The ability to electrically manipulate antiferromagnetic magnons, essential for extending the operating speed of spintronic devices into the terahertz regime, remains a major challenge. This is because antiferromagnetic magnetism is challenging to perturb using traditional methods such as magnetic fields. Recent developments in spin-orbit torques have opened a possibility of accessing antiferromagnetic magnetic order parameters and controlling terahertz magnons, which has not been experimentally realised yet. Here, we demonstrate the electrical manipulation of sub-terahertz magnons in the α-Fe2O3/Pt antiferromagnetic heterostructure. By applying the spin-orbit torques in the heterostructure, we can modify the magnon dispersion and decrease the magnon frequency in α-Fe2O3, as detected by time-resolved magneto-optical techniques. We have found that optimal tuning occurs when the Néel vector is perpendicular to the injected spin polarisation. Our results represent a significant step towards the development of electrically tunable terahertz spintronic devices.

Wide Linearity Range 3D Magnetic Sensor and Angular Position Detector Based on a Single FePt Spin-Orbit Torque Device.

Three-dimensional (3D) vector magnetic sensors play a significant role in a variety of industries, especially in the automotive industry, which enables the control of precise position, angle, and rotation of motion elements. Traditional 3D magnetic sensors integrate multiple sensors with their sensing orientations along the three coordinate axes, leading to a large size and inevitable nonorthogonal misalignment. Here, we demonstrate a wide linearity range 3D magnetic sensor utilizing a single L10-FePt Hall-bar device, whose sensitivity is 291 VA-1 T-1 in the z-axis and 27 VA-1 T-1 in the in-plane axis. Based on the spin-orbit torque-dominated magnetization reversal, the linear response of anomalous Hall resistance within a large linear range (±200 Oe) for the x, y, and z components of magnetic fields has been obtained, respectively. Typically, it exhibits a relatively lower magnetic noise level of 7.9 nV at 1 Hz than previous results, improving measurement resolution at the low frequency. Furthermore, we provide a straightforward approach for noncontact angular position detection based on a single Hall-bar device, which shows great potential for application in rotational motion control.

Efficient magnetization switching induced by spin–orbit torque in perpendicularly magnetized Mn1+xCo2−xAl Heusler alloys

Perpendicularly magnetized Co-based Heusler alloys are promising candidates in high-performance spintronic devices. However, there is a contradiction between thermal stability and damping-like spin–orbit torque (SOT) efficiency in Co-based Heusler alloys with interface-induced perpendicular magnetic anisotropy (PMA). Here, we present epitaxially grown perpendicularly magnetized Mn1+xCo2−xAl (MCA) Heusler alloys through tetragonal distortion. Ferrimagnetism and distortion-induced PMA are obtained in MCA Heusler alloys. A large effective spin Hall angle (θeff) up to 0.33 is experimentally demonstrated in Pt/MCA bilayers, markedly surpassing that in conventional Pt/FM bilayers. Consequently, SOT-induced efficient magnetization switching is realized in Pt/MCA bilayers, with a critical switching current density (Jc) as low as 4 × 107 A/cm2. The large θeff and high SOT efficiency would be attributed to the staggered magnetic exchange torques in the ferrimagnetic MCA Heusler alloys. These findings demonstrate that perpendicularly magnetized ferrimagnetic MCA Heusler alloys are highly promising for high-density SOT-magnetic random-access memory with superior thermal stability and low power consumption.

Magnetic domain structures in ultrathin Bi2Te3/CrTe2 heterostructures

Abstract Chromium tellurium compounds are important two-dimensional van der Waals ferromagnetic materials with high Curie temperature and chemical stability in air, which is promising for applications in spintronic devices. Here, high-quality spin-orbital-torque (SOT) device, Bi2Te3/CrTe2 heterostructure was epitaxially grown on Al2O3 (0001) substrates. Anomalous Hall measurements indicate the existence of strong ferromagnetism in this device with the CrTe2 thickness down to 10 nm. In order to investigate its micromagnetic structure, cryogenic magnetic force microscope (MFM) was utilized to measure the magnetic domain evolutions at various temperatures and magnetic fields. The virgin domain state of the device shows a worm-like magnetic domain structure with the size around 0.6 ~ 0.8 µm. Larger irregular-shape magnetic domains (＞1µm) can be induced and pinned, after the field is increased to coercive field and ramped back to low fields. The temperature-dependent MFM signals exhibit a nice mean-field-like ferromagnetic transition with Curie temperature around 201.5 K, indicating a robust ferromagnetic ordering. Such device can be potentially implemented in future magnetic memory technology.

Enhanced Spin–Orbit Torques in Graphene by Pt Adatoms Decoration

Abstract Graphene (Gr) with widely acclaimed characteristics, such as exceptionally long spin diffusion length at room temperature, provides an outstanding platform for spintronics. However, its inherent weak spin–orbit coupling (SOC) has limited its efficiency for generating the spin currents in order to control the magnetization switching process for applications in spintronics memories. Following the theoretical prediction on the enhancement of SOC in Gr by heavy atoms adsorption, here we experimentally observe a sizeable spin–orbit torques (SOTs) in Gr by the decoration of its surface with Pt adatoms in Gr/Pt(t Pt)/FeNi trilayers with the optimal damping-like SOT efficiency around 0.55 by 0.6-nm-thick Pt layer adsorption. The value is nearly four times larger than that of the Pt/FeNi sample without Gr and nearly twice the value of the Gr/FeNi sample without Pt adsorption. The efficiency of the enhanced SOT in Gr by Pt adatoms is also demonstrated by the field-free SOT magnetization switching process with a relatively low critical current density around 5.4 MA/cm2 in Gr/Pt/FeNi trilayers with the in-plane magnetic anisotropy. These findings pave the way for Gr spintronics applications, offering solutions for future low power consumption memories.

Magnetization switching driven by spin current in a T-type ferromagnetic trilayer

The T-type CoFeB/spacer/CoFeB structure is a promising candidate for the development of perpendicular spin–orbit torque (SOT) magnetic random-access memory and other SOT devices. It consists of an in-plane magnetized layer, a perpendicularly magnetized layer, and a non-magnetic metal spacer that induces interlayer exchange coupling. By engineering the W spacer, this system achieves field-free SOT switching with a nearly 100% switching ratio. Furthermore, it realizes a high exchange coupling field of 255 Oe using a relatively thinner spacer thickness, enhancing the reliability and energy efficiency of SOT switching. Measurement of current switching probability suggests that this perpendicular magnetic anisotropy system may enable the implementation of probability-adjustable true random number generators in future applications. The T-type structures with strong interlayer coupling exhibit great potential for spintronic device applications.

Enhanced torque efficiency in ferromagnetic multilayers by introducing naturally oxidized Cu

Spin–orbit torque (SOT) in the heavy elements with a large spin–orbit coupling (SOC) has been frequently used to manipulate the magnetic states in spintronic devices. Recent theoretical works have predicted that the surface oxidized light elements with a negligible SOC can yield a sizable orbit torque (OT), which plays an important role in switching the magnetization. Here, we report anomalous-Hall-resistance and harmonic-Hall-voltage measurements on perpendicularly magnetized Ta/Cu/[Ni/Co]5/Cu-CuOx multilayers. Both torque efficiency and spin-Hall angle of these multilayers are largely enhanced by introducing a naturally oxidized Cu-CuOx layer, where the SOC is negligible. Such an enhancement is mainly due to the collaborative driven of the SOT from the Ta layer and the OT from the Cu/CuOx interface and can be tuned by controlling the thickness of Cu-CuOx layer. Compared to the Cu-CuOx-free multilayers, the maximum torque efficiency and spin-Hall angle were enhanced by a factor of ten, larger than most of the reported values in the other heterostructures.