Spin Memory Research Articles

Interface defect state induced spin injection in organic magnetic tunnel junctions

This article analytically explores defect assisted spin injection in organic magnetic tunnel junctions (MTJs) [x/rubrene/Co, x = La2O3, LaMnO3, La0.7Ca0.3MnO3 (LCMO), La0.7Sr0.3MnO3 (LSMO)] employing nonequilibrium Green’s function (NEGF). Spin precession at ferromagnet (FM)/organic semiconductor (OSC) interface defect states have been considered while modeling the MTJ devices. Variations in voltage dependent parallel (RP) and antiparallel (RAP) resistances have been attributed to modified spin dependent scattering at modified spin resolved density of states of magnetic electrodes. Moreover, change in distribution of defect state depths at a spin injection interface has also been observed to modify RP/RAP, and hence, tunnel magnetoresistance (TMR) across the devices. Localization of defect state distribution due to a high spin split band may have resulted in large TMR for La2O3 devices. Nonlinear spin transfer torque (STT) in devices other than LSMO indicates compensation of spin damping, resulting in a high TMR response across the devices. Hence, the localization of defect state distribution and the choice of magnetic electrodes with high spin split bands may be exercised to realize spintronic devices for low power spin memory applications.

Electron Spin Polarization and Memory Effect in Supramolecular Gel Exclusively From Achiral Building Blocks.

Chirality has been identified as a crucial component in achieving high spin selectivity in organic polymers and π-conjugated molecules. In particular, chiral polymers and supramolecular structures have emerged as promising candidates for spin filtering due to the chirality-induced spin selectivity (CISS) effect. However, the CISS effect in supramolecular systems has not been extensively investigated, despite its potential for applications in spintronics. In this work, for the first time, the potential applications of the CISS effect in supramolecular gel materials and shed light on its untapped possibilities have been successfully explored. The ability of supramolecular gel exclusively made from achiral building blocks to selectively filter electron's spin through the symmetry breaking has been demonstrated. Furthermore, this study shows that their spin filtering efficacy can be improved by using chiral solvents. More importantly, the CISS effect has been employed to explore a novel phenomenon referred to as the "spin memory effect", where the desired spin information is preserved by retaining the helicity even in the absence of the chiral solvent. These findings underscore the immense potential for spintronics applications that rely solely on achiral components, thereby paving the way for new possibilities in device design and functionality.

Magnon excitation-induced spin memory loss in epitaxial L10-FePt/MgO/L10-FePt magnetic tunnel junctions

This work investigates the interplay between interfacial spin–orbit coupling (SOC) and magnon excitation-induced spin memory loss in epitaxial L10-FePt/MgO/L10-FePt magnetic tunnel junctions, which is crucial for advancing spintronic technologies. By employing systematic temperature-dependent transport measurements and inelastic electron tunneling spectroscopy, our study reveals that interfacial SOC at the Pt-terminated FePt/MgO interface significantly enhances magnon excitation during electron tunneling. This process results in a pronounced loss of spin memory in the spin-polarized current, diminishing the tunnel magnetoresistance ratio. Our findings provide critical insights into the mechanisms of spin memory loss, offering directions for optimizing spintronic device performance in the context of pronounced SOC environments.

Developing 3D Models of Atom-Like Defect Spin Memories in Crystals for Quantum Technology Research and Education

Developing 3D Models of Atom-Like Defect Spin Memories in Crystals for Quantum Technology Research and Education

Spin-anomalous-Hall unidirectional magnetoresistance in light-metal/ferromagnetic-metal bilayers

Nonreciprocal magnetotransport is one of the central topics in spintronics because of its importance for electrically probing magnetic information. Among numerous electrical probes used to read magnetic orders, unidirectional magnetoresistance (UMR), characterized by sign changes upon reversal of either current or magnetization, is currently a matter of great interest and has been identified in various spin–orbit-coupled bilayer systems composed of an (anti)ferromagnetic layer and a nonmagnetic layer with strong spin Hall effect. A recent theoretical work predicts that a spin-anomalous-Hall (SAH) UMR in those metallic conducting bilayers can originate from the spin-anomalous-Hall effect of the ferromagnetic layer and the structural inversion asymmetry. However, this type of UMR has not been reported experimentally. Here, we give the experimental evidence of spin-anomalous-Hall UMR in the light-metal/ferromagnetic-metal Cu/Co bilayers, where the emergence of net nonequilibrium spin density is attributed to the interfacial spin leakage asymmetry due to the spin memory loss effect at the Cu/Co interface and multiple spin reflections. We also show a highly tunable UMR in the Cu/Co/CuOx trilayer by varying the Cu thickness, which is due to the competition between the orbital Rashba effect in Co/CuOx and the spin-anomalous-Hall effect in Cu/Co. Our work widens the material choice for UMR device applications and provides an alternative approach to detect in-plane magnetization without an external spin polarizer.

Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn

Topological semimetal materials have attracted a great deal of attention due to their intrinsic strong spin-orbit coupling, which leads to large charge-to-spin conversion efficiency and novel spin transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.0034 nm2A−1Oe−1 in a single layer of sputtered semimetal Pt3Sn at room temperature. Being different from previous works, the value of BMER in sputtered Pt3Sn does not change out-of-plane due to the polycrystalline nature of the Pt3Sn layer. The observation of BMER provides strong evidence of the existence of spin-momentum locking in the sputtered polycrystalline Pt3Sn. By adding an adjacent CoFeB magnetic layer, the BMER value of this bilayer system is doubled compared to the single Pt3Sn layer. This work broadens the material system in BMER study, which paves the way for the characterization of topological states and applications for spin memory and logic devices.

Toward Programmable Quantum Processors Based on Spin Qubits with Mechanically Mediated Interactions and Transport.

Solid-state spin qubits are promising candidates for quantum information processing, but controlled interactions and entanglement in large, multiqubit systems are currently difficult to achieve. We describe a method for programmable control of multiqubit spin systems, in which individual nitrogen-vacancy (NV) centers in diamond nanopillars are coupled to magnetically functionalized silicon nitride mechanical resonators in a scanning probe configuration. Qubits can be entangled via interactions with nanomechanical resonators while programmable connectivity is realized via mechanical transport of qubits in nanopillars. To demonstrate the feasibility of this approach, we characterize both the mechanical properties and the magnetic field gradients around the micromagnet placed on the nanobeam resonator. We demonstrate coherent manipulation of a spin qubit in the proximity of a transported micromagnet by utilizing nuclear spin memory and use the NV center to detect the time-varying magnetic field from the oscillating micromagnet, extracting a spin-mechanical coupling of 7.7(9)Hz. With realistic improvements, the high-cooperativity regime can be reached, offering a new avenue toward scalable quantum information processing with spin qubits.

Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature

A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as a prominent example. However, the three-dimensional nature of diamond limits the obtainable proximity of the defect to the sample. Two-dimensional boron nitride, which can host spin-active defects, can be used to overcome those limitations. In this work, we study spin properties of sp2-bonded boron nitride layers grown using Metal Organic Chemical Vapor Deposition at temperatures ranging from 700 °C to 1200 °C. With Electron Spin Resonance (ESR) we show that our layers exhibit spin properties, which we ascribe to carbon related defects. Supported by photoluminescence and Fourier-transform infrared spectroscopy, we distinguish three different regimes: (i) growth at low temperatures with no ESR signal, (ii) growth at intermediate temperatures with a strong ESR signal and a large number of spin defects, (iii) growth at high temperatures with a weaker ESR signal and a lower number of spin defects. The observed effects can be further enhanced by an additional annealing step. Our studies demonstrate wafer-scale boron nitride that intrinsically hosts spin defects without any ion or neutron irradiation, which may be employed in spin memories or magnetic field detectors.

Entanglement of nanophotonic quantum memory nodes in a telecom network

A key challenge in realizing practical quantum networks for long-distance quantum communication involves robust entanglement between quantum memory nodes connected by fibre optical infrastructure1–3. Here we demonstrate a two-node quantum network composed of multi-qubit registers based on silicon-vacancy (SiV) centres in nanophotonic diamond cavities integrated with a telecommunication fibre network. Remote entanglement is generated by the cavity-enhanced interactions between the electron spin qubits of the SiVs and optical photons. Serial, heralded spin-photon entangling gate operations with time-bin qubits are used for robust entanglement of separated nodes. Long-lived nuclear spin qubits are used to provide second-long entanglement storage and integrated error detection. By integrating efficient bidirectional quantum frequency conversion of photonic communication qubits to telecommunication frequencies (1,350 nm), we demonstrate the entanglement of two nuclear spin memories through 40 km spools of low-loss fibre and a 35-km long fibre loop deployed in the Boston area urban environment, representing an enabling step towards practical quantum repeaters and large-scale quantum networks.

Interfacial Magnetic Anisotropy Controlled Spin Pumping in Co60Fe20B20/Pt Stack

Controlled spin transport in magnetic stacks is required to realize pure spin current-driven logic and memory devices. The control over the generation and detection of the pure spin current is achieved by tuning the spin to charge conversion efficiency of the heavy metal interfacing with ferromagnets. Here, we demonstrate the direct tunability of spin angular momentum transfer and thereby spin pumping, in CoFeB/Pt stack, with interfacial magnetic anisotropy. The ultra-low thickness of the CoFeB thin film by tilting the magnetization from in-plane to out-of plane direction due to interfacial anisotropy from higher thickness of CoFeB thin film. The ferromagnetic resonance measurements are performed to investigate the magnetic anisotropy and spin pumping in CoFeB/Pt stacks. We clearly observe tunable spin pumping effect in the CoFeB/Pt stacks with varying CoFeB thicknesses. The spin current density, with varying ferromagnetic layer thickness, is found to increase from 1.10[Formula: see text]MA/m2 to 2.40[Formula: see text]MA/m2, with increasing in-plane anisotropy field. Such interfacial anisotropy-controlled generation of pure spin current can potentially lead to next-generation anisotropic spin current-controlled spintronic devices.

Generation of genuine all-way entanglement in defect-nuclear spin systems through dynamical decoupling sequences

Multipartite entangled states are an essential resource for sensing, quantum error correction, and cryptography. Color centers in solids are one of the leading platforms for quantum networking due to the availability of a nuclear spin memory that can be entangled with the optically active electronic spin through dynamical decoupling sequences. Creating electron-nuclear entangled states in these systems is a difficult task as the always-on hyperfine interactions prohibit complete isolation of the target dynamics from the unwanted spin bath. While this emergent cross-talk can be alleviated by prolonging the entanglement generation, the gate durations quickly exceed coherence times. Here we show how to prepare high-quality GHZM-like states with minimal cross-talk. We introduce the M-tangling power of an evolution operator, which allows us to verify genuine all-way correlations. Using experimentally measured hyperfine parameters of an NV center spin in diamond coupled to carbon-13 lattice spins, we show how to use sequential or single-shot entangling operations to prepare GHZM-like states of up to M=10 qubits within time constraints that saturate bounds on M-way correlations. We study the entanglement of mixed electron-nuclear states and develop a non-unitary M-tangling power which additionally captures correlations arising from all unwanted nuclear spins. We further derive a non-unitary M-tangling power which incorporates the impact of electronic dephasing errors on the M-way correlations. Finally, we inspect the performance of our protocols in the presence of experimentally reported pulse errors, finding that XY decoupling sequences can lead to high-fidelity GHZ state preparation.

Enhancement of spin to charge conversion efficiency at the topological surface state by inserting normal metal spacer layer in the topological insulator based heterostructure

In this study, we report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure (BiSbTe1.5Se1.5/Cu/Ni80Fe20) by using spin-pumping technique, where BiSbTe1.5Se1.5 is the TI and Ni80Fe20 is the ferromagnetic (FM) layer. The SCC, characterized by inverse Edelstein effect length (λIEE) in the TI material, gets altered with an intervening Copper (Cu) layer, and it depends on the interlayer thickness. The introduction of Cu layer at the interface of TI and FM metal provides a new degree of freedom for tuning the SCC efficiency of the topological surface states. The significant enhancement of the measured spin-pumping voltage and the increased linewidth of ferromagnetic resonance absorption spectra due to the insertion of Cu layer at the interface indicate a reduction in spin memory loss at the interface that resulted from the presence of exchange coupling between the surface states of TI and the local moments of FM metal. The temperature dependence (from 8 to 300 K) of the evaluated λIEE data for all the trilayer systems, TI/Cu/FM with different Cu thicknesses, confirms the effect of exchange coupling between the TI and FM layer on the SCC efficiency of the topological surface state. This study offers promising ways for designing more efficient spin-charge conversion devices of the TI-based heterostructure by controlling the interface effects.

Room temperature coherence properties and 14N nuclear spin readout of NV centers in 4H–SiC

We have investigated the room temperature spin coherence properties of the axial NVkk center in 4H–SiC by pulsed high-frequency electron spin resonance and electron-nuclear double resonance techniques. Our results show a remarkable phase coherence time (TCoherence) of 25.3 μs at room temperature for ensembles of NV centers. We demonstrate precise control over NV defect spins through Rabi oscillations, which exhibit a linear response to microwave power. Additionally, the demonstrated room temperature readout of the intrinsic 14N nuclear spin (I = 1) underscores its potential as a robust nuclear spin memory resource, further positioning NV defects in 4H–SiC as an advanced platform for implementing cutting-edge quantum technologies in semiconductor systems.

Exploration of Griffiths phase, spin glass behaviour and memory effect in a frustrated Al2MnCoO7 pyrochlore compound

Al2MnCoO7 pyrochlore compound has been synthesized following the multistep solid-state ceramics route. The compound exhibits a monoclinic structure, which was confirmed through the X-ray diffraction pattern analysis. The magnetization measurements in both zero-field-cooled (ZFC) and field-cooled (FC) modes indicate that the compound undergoes a phase transition from paramagnetic (PM) to antiferromagnetic (AFM) state at the Néel transition temperature TN ∼31 K. Notably, below TN, there is a substantial discrepancy between the ZFC and FC curves, which can be ascribed to the existence of competing ferromagnetic (FM) and AFM interactions, resulting in a glassy behaviour. Additionally, the compound demonstrates a Griffiths phase above TN, signifying the presence of ferromagnetic clusters within the PM region of the material. The spin-glass behaviour is confirmed by the shift of maxima towards higher temperatures with increasing frequency in the ac susceptibility measurement. The memory effect also confirms the spin-glass nature of the compound. The Arrott's plots confirmed that the magnetic phase transition in the material to be a second-order type. Additionally, the material exhibited a maximum magnetic entropy change (−ΔS) value of 1.08 J/kg.K and a relative cooling power of 36.60 J/kg under an applied magnetic field of 5 T.

Oscillation of interlayer coupling in epitaxial FePd|Ir|FePd(001) perpendicular synthetic antiferromagnet

L10 FePd is a promising candidate material for spin memory devices, especially when paired with Ir as an interlayer coupling layer, leading to significant interlayer exchange coupling (IEC) energy between ferromagnetic layers and strong perpendicular magnetic anisotropy. Synthetic antiferromagnets (SAFs) are emphasized for spintronic applications, offering advantages like quick magnetization switching and enhanced stability. This study presents findings on the influence of Ir spacer thickness on the structural and magnetic properties of FePd SAFs, highlighting lattice matching and coherence throughout the entire SAF structure and revealing a maximum interlayer exchange energy of 3 mJ/m2. We suggest the potential of this FePd|Ir|FePd system as a building block for future spintronic applications.

Tunable Spin-Polarized States in Graphene on a Ferrimagnetic Oxide Insulator.

Spin-polarized two-dimensional (2D) materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, this work demonstrates the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin polarization is induced through a magnetic exchange interaction between graphene and the underlying ferrimagnetic oxide insulating layer, Tm3 Fe5 O12 , as confirmed by its X-ray magnetic circular dichroism (XMCD). The spin-splitting energies are directly measured and visualized by the shift in their Landau-fan diagram mapped by analyzing the measured Shubnikov-de-Haas (SdH) oscillations as a function of applied electric fields, showing consistent fit with the first-principles and machine learning calculations. Further, the observed spin-splitting energies can be tuned over a broad range between 98 and 166 meV by field cooling. The methods and results are applicable to other 2D (magnetic) materials and heterostructures, and offer great potential for developing next-generation spin logic and memory devices.

Gyroscopic gravitational memory

We study the motion of a gyroscope located far away from an isolated gravitational source in an asymptotically flat spacetime. As seen from a local frame tied to distant stars, the gyroscope precesses when gravitational waves cross its path, resulting in a net ‘orientation memory’ that carries information on the wave profile. At leading order in the inverse distance to the source, the memory consists of two terms: the first is linear in the metric perturbation and coincides with the spin memory effect, while the second is quadratic and measures the net helicity of the wave burst. Both are closely related to symmetries of the gravitational radiative phase space at null infinity: spin memory probes superrotation charges, while helicity is the canonical generator of local electric-magnetic duality on the celestial sphere.

Nanoprobe Based Information Processing: Nanoprobe‐Electronics

AbstractWith computational architectures becoming data‐centric and with the rise of in‐memory computing, the role of memory will be ever more crucial. In turn, storing massive amount of data demands for ultra‐low power and non‐volatile types necessitating new memory technologies. Here, a controllable nanoelectromechanical (NEM) spin memory is proposed for compact nonvolatile memory arrays. It combines the advantages of both nanomechanical and spin‐transfer torque (STT) magnetic memory devices to overcome fundamental scalability roadblocks of non‐hybrid alternatives. The hybrid system paves the way to a new memory technology in the regime of sub‐10‐nm lateral size with a sub‐1‐MA cm−2 switching energy.

Microscopic theory of spin-orbit torque and spin memory loss from interfacial spin-orbit coupling

Microscopic theory of spin-orbit torque and spin memory loss from interfacial spin-orbit coupling

Role of interfacial layer on exchange-coupled magnetic properties of bi-magnetic nanostructures: An experimental and theoretical approach

Bi-magnetic hetero-nanostructures exhibiting significant exchange bias effects are highly desirable for technological advancement in spin valves, memory devices, data storage, biomedicine, and hyperthermia-based cancer treatment. As the interfacial spin interaction and the resulting anisotropy play a central role in these phenomena, investigating the tailored physical properties of hetero-structures of magnetically contrasting nanoparticles in different architectures is extremely useful. In this work, we report the formation of microspheres containing nano-aggregates of ferrimagnetic Fe3O4 and antiferromagnetic NiO phases. We demonstrate that this kind of bi-magnetic hetero-structures provide a conducive atmosphere for strong interfacial coupling giving rise to an extensive exchange bias effect (∼1.6 kOe). In addition, we also observe a substantial enhancement of the coercive field, indicating the onset of an additional unidirectional anisotropy under the field-cooled condition. Our first-principle density functional theory calculations reveal the role of cation intermixing at the interface of the two phases, being the source of an additional higher magneto-crystalline anisotropy than the original phases. This cation intermixing at the interface also causes a narrowed energy band, which was demonstrated by UV–Vis spectroscopy and first principle calculations. Having these technologically essential features with a tunable band gap, the embedded hetero-nanostructures are envisioned to cater to the requirement of high-density data storage and memory devices.