Enhancement of spin to charge conversion efficiency at the topological surface state by inserting normal metal spacer layer in the topological insulator based heterostructure

Abstract

In this study, we report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure (BiSbTe1.5Se1.5/Cu/Ni80Fe20) by using spin-pumping technique, where BiSbTe1.5Se1.5 is the TI and Ni80Fe20 is the ferromagnetic (FM) layer. The SCC, characterized by inverse Edelstein effect length (λIEE) in the TI material, gets altered with an intervening Copper (Cu) layer, and it depends on the interlayer thickness. The introduction of Cu layer at the interface of TI and FM metal provides a new degree of freedom for tuning the SCC efficiency of the topological surface states. The significant enhancement of the measured spin-pumping voltage and the increased linewidth of ferromagnetic resonance absorption spectra due to the insertion of Cu layer at the interface indicate a reduction in spin memory loss at the interface that resulted from the presence of exchange coupling between the surface states of TI and the local moments of FM metal. The temperature dependence (from 8 to 300 K) of the evaluated λIEE data for all the trilayer systems, TI/Cu/FM with different Cu thicknesses, confirms the effect of exchange coupling between the TI and FM layer on the SCC efficiency of the topological surface state. This study offers promising ways for designing more efficient spin-charge conversion devices of the TI-based heterostructure by controlling the interface effects.