Abstract
This work investigates the interplay between interfacial spin–orbit coupling (SOC) and magnon excitation-induced spin memory loss in epitaxial L10-FePt/MgO/L10-FePt magnetic tunnel junctions, which is crucial for advancing spintronic technologies. By employing systematic temperature-dependent transport measurements and inelastic electron tunneling spectroscopy, our study reveals that interfacial SOC at the Pt-terminated FePt/MgO interface significantly enhances magnon excitation during electron tunneling. This process results in a pronounced loss of spin memory in the spin-polarized current, diminishing the tunnel magnetoresistance ratio. Our findings provide critical insights into the mechanisms of spin memory loss, offering directions for optimizing spintronic device performance in the context of pronounced SOC environments.
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