Spin Electronic Devices Research Articles

A DFT theoretical prediction of new half-metallic ferromagnetism, mechanical stability, optoelectronic and thermoelectric properties of ZnCrO3 perovskites for spintronic applications

ZnCrO3 perovskites structural stability, optoelectronic, mechanical, along with thermoelectric properties, have all been to be described by calculations based on density functional theory (DFT). To determine the exchange correlation potential, the well-known generalized gradient approximation (GGA) and integration of the mBJ potential were used. The perovskite shows that this is in a cubic structure with Fm3m symmetry. Additionally, to check the stability, cohesive energy, structural optimization, and mechanical stability were requirements. This perovskite was found to be brittle, and their mechanical stability enhanced by the elastic constants. The perovskite has a half-metallic character, as evidenced by the spin-polarized electronic band profile, the behavior of the dielectric constant, and absorption coefficient in the spin-up and down channels. In this article, we also looked at magnetism and the origin of the half-metallic gap. The unpaired electrons in the split d-orbitals of the M-sited elements in the crystal field are responsible for the half-metallic as well as magnetic characteristics. Excellent spin polarization at the Fermi level encourages perovskite's possible use in spintronic technologies. Lastly, we computed the thermoelectric parameters within a chemical potential at various temperatures (300 K, 600, 900 K) to explore the potential application in spin electronic devices. Our finding shows that the ZnCrO3 alloy is exceptionally promising for the next generation of spintronics and thermoelectric devices at room and high temperatures.

Electronic structures and magnetic properties of Janus NbSSe monolayer controlled by carrier doping

Two-dimensional spintronics has become a hot topic in recent years due to its advantages and potential in manipulating electron spins. In this paper, the electronic structures and magnetic properties of the Janus NbSSe monolayer are calculated using first-principles and Monte Carlo methods. Our study shows that the ground state of the material is a ferromagnetic metal. Under carrier doping, it undergoes a second-order phase transition from metal to half-metal, achieving 100% spin polarization, and enhancing or weakening ferromagnetic coupling. The value of the magnetocrystalline anisotropy energy is 570.96 μeV, and doping with an appropriate concentration of holes can transform the easy magnetization axis from in-plane to out-of-plane. Since the out-of-plane mirror symmetry is broken, we study the charge changes in the layer under the action of an external electric field. Due to the combined action of the external electric field and the built-in electric field, the layer exhibits a unique charge transfer mode. It is predicted that the Curie temperature of the material is about 156 K. When doped with 4.01 × 1013 cm−2 (0.04 holes per atom) concentration holes, the Curie temperature can reach about 350 K, indicating that the Curie temperature of the material can be reasonably controlled by regulating the carrier concentration. The coercive force calculated from the hysteresis loop is 0.01 T, and its hysteresis loss is low, showing its response to the external magnetic field. All of the above results indicate the application potential of this material in spin-electronic devices.

Preparation, optical properties, room temperature ferromagnetism, and mechanism of ordered nanotube-like tantalum oxide films

Physical property changes caused by defects have recently attracted significant attention due to their potential applications in sensors, spintronic devices, and multifunctional memory. Due to their numerous surface defects, this study fabricated ordered Ta2O5 nanotube (NT) thin films on Ta foil through an anodization technique. Then, the oxygen bubble model was applied to explain the formation of NTs from the perspective of lattice orientation. Furthermore, this study investigated influence of anodization duration and annealing treatment on the crystal structure, optical properties, and magnetic behavior. Notably, room-temperature ferromagnetism was observed in the as-prepared Ta2O5 NTs for the first time. After annealing in an argon atmosphere, the band gap of the sample decreased, accompanied by an increase in ferromagnetism. The underlying mechanism for this phenomenon was elucidated using a hydrogen-like impurity model. Consequently, this study on the magnetism of Ta2O5 NTs holds excellent potential for expanding their application in spin electronic devices.

First-principles calculations to investigate Mg3XH8 (X = Ca, Sc, Ti, V, Cr, Mn) materials for hydrogen storage

An ideal hydrogen storage material is a key topic in efficient hydrogen energy utilization. We have explored several potential hydrogen storage materials Mg3XH8 (X = Ca, Sc, Ti, V, Cr, Mn) by first-principles calculations. The studied materials all belong to lightweight hydrogen storage materials. The normal phonon dispersion spectrum indicates, without regard to other materials, at least Mg3TiH8 and Mg3VH8 are completely stable in dynamics, which is also demonstrated by elastic stability criteria. The elastic properties show that they are all ductile materials with the applicable potential in flexible fields. Besides, they are gapless and metallic in band structures. With the correction of Hubbard values, all transition metal based Mg3XH8 materials are magnetic materials with magnetic moments of 0.34 μB for Mg3ScH8, and 2.14 μB for Mg3TiH8, 1.29 μB for Mg3TiH8, 2.65 μB for Mg3TiH8 and 4.86 μB for Mg3MnH8, respectively. Whereas Mg3CrH8 and Mg3MnH8 exhibit highly light active in infrared and visible region. Considering overall structural stability, excellent mechanical properties, high gravimetric hydrogen density (6.21% and 6.07%) and moderate hydrogen desorption temperature (∼350 K), Mg3TiH8 and Mg3VH8 are considered as the candidates for promising hydrogen storage materials. Besides, Due to half-metallic nature, they are also potential in spin electronic devices.

Magnetothermal properties of CoO2 monolayer from first-principles and Monte Carlo simulations

Cobalt oxides are known for their excellent heat transfer properties. The main component of cobalt oxides is the CoO2 monolayer, which exhibits high-temperature superconductivity caused by strong electron–phonon coupling (EPC). We here systematically investigate the structural stability, electronic structure, and magnetism of the CoO2 monolayer using first-principles and Monte Carlo simulations. On this basis, we further study the changes in the spin energy gap, magnetic axis direction, and other properties of the CoO2 monolayer with the changes in carrier concentration. By appropriately doping the CoO2 monolayer with holes, the magnetic axis direction of the CoO2 monolayer can be reversed, thereby enhancing its potential application in the field of spin electronic devices. Monte Carlo simulation is used to study the regulation of different factors on the magnetothermal properties of the CoO2 monolayer. Through the analysis of physical parameters such as Curie temperature (TC) and bandgap, we find that the appropriate carrier concentration and magnetic field can not only regulate the magnetothermal properties of materials but also further improve the efficiency of materials in low-temperature environments.

Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition.

Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting are documented within the framework of the non-relativistic spin group symmetry, there is limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a novel spin-splitting in the band structure. This study delves into the intricate relativistic electronic structure of an AM material, α-MnTe. Employing temperature-dependent angle-resolved photoelectron spectroscopy across the AM phase transition, the emergence of a relativistic valence band splitting concurrent with the establishment of magnetic order is elucidated. This discovery is validated through disordered local moment calculations, modeling the influence of magnetic order on the electronic structure and confirming the magnetic origin of the observed splitting. The temperature-dependent splitting is ascribed to the advent of relativistic spin-splitting resulting from the strengthening of AM order in α-MnTe as the temperature decreases. This sheds light on a previously unexplored facet of this intriguing material.

Giant Magneto-Optical Effect in van der Waals Room-Temperature Ferromagnet Fe3GaTe2

Abstract The discovery of ferromagnetic two-dimensional (2D) van der Waals (vdWs) materials provides an opportunity to explore intriguing physics and to develop innovative spin electronic devices. However, the main challenge for practical applications of vdWs ferromagnetic crystals lies in the weak intrinsic ferromagnetism and small perpendicular magnetic anisotropy (PMA) above room temperature. Here, we report the intrinsic vdWs ferromagnetic crystal Fe3GaTe2, synthesized by the self-flux method, exhibiting a Curie temperature (T C) of 370 K, a high saturation magnetization of 33.47 emu/g, and a large PMA energy density of approximately 4.17 × 105 J/m3. Furthermore, the magneto-optical effect is systematically investigated in Fe3GaTe2. The doubly degenerate E 2g (Γ) mode reverses the helicity of incident photons, indicating the existence of pseudoangular-momentum (PAM) and chirality. Meanwhile, the non-degenerate non-chiral A 1g(Γ) phonon exhibits a significant magneto-Raman effect under an external out-of-plane magnetic field. These results lay the groundwork for studying phonon chirality and magneto-optical phenomena in 2D magnetic materials, providing the feasibility for further fundamental research and applications in spintronic devices.

Electronic states of the constituent magnetic elements, superior magnetic properties and spin-flip metamagnetic transition in Cu3Dy(SeO3)2O2Cl

Dy based cuprate francisite [Cu3Dy(SeO3)2O2Cl, in short DyCufr] is so far potentially the most fascinating magnetic compound in the class of francisite compounds. Synthesized DyCufr has been investigated via structural, X-ray absorption near edge structure (XANES), X-ray photoelectron spectroscopy (XPS) and magnetization measurements. XANES and XPS provide consistent and corroborative results regarding electronic states of the constituent elements. The most striking observation is that the slope of magnetization for the field induced metamagnetic transition (MMT) attains nearly infinity (perfect), hysteresis associated with MMT is substantially high, and the critical field for MMT is very low. The antiferromagnetic ordering temperature (TN), saturation magnetization (MS) are very high, and the remanent magnetization (MR) is appreciable in DyCufr in contrast to few other similar compounds. Unpaired 4f electrons of Dy3+ causing high value of effective magnetic moment and spin-flip type metamagnetism are pivotal for producing magnetically the most superior francisite. Actually, sharp MMT as evidenced in DyCufr, has the potential to be used in magneto-refrigeration and spin-electronic devices because it can produce an avalanche flip of spin structure from low-spin (antiferromagnetic) to high-spin (ferromagnetic) state.

Growth and surface magnetism of ultrathin Cr(001) films

We investigate the growth of ultrathin Cr films on a Au(001) surface and observe that the growth of 1.5 nm thick Cr layers at 290 K, followed by post-annealing at 520 K, results in high-quality epitaxial Cr(001) films with atomically flat large terraces and distinct surface states. Subsequently, these optimized growth conditions are successfully applied to the growth of 1 nm and 3 nm thick Cr films. Magnetic imaging of 1 and 1.5 nm thick Cr(001) films prepared under the optimized growth conditions is performed using spin-polarized scanning tunneling microscopy. Distinct magnetic contrasts featuring a topological antiferromagnetic (TAF) order are observed in both films; however, spin frustration originating from the density of screw dislocations for both films shows a significant difference. The 1.0 nm thick Cr film, which exhibits a clear TAF order with the suppression of a large spin-frustrated area, is suitable for application to spin-electronic devices.

Greatly Improved the Tunable Amplitude of Ferromagnetism Based on Interface Effect of Flexible Pt/YIG Heterojunctions.

Flexible quantum spin electronic devices based on ferromagnetic insulators have attracted wide attention due to their outstanding advantages of low-power dissipation and noncontact sensing. However, ferromagnetic insulators, such as monocrystalline yttrium iron garnet (Y3Fe5O12, YIG), hve weak stress effects with a small magnetostrictive coefficient (λ110, 10 ppm), making it difficult to achieve a large magnetic tunable amplitude. In this paper, large-scale (with a diameter of 40 mm), flexible Pt/YIG heterojunctions were obtained by double-cavity magnetron sputtering technology, indicating typical soft magnetism and good bending fatigue characteristics. Here, the 3 nm thickness of the Pt layer triggers an obvious magnetic proximity effect, in which the in-plane ferromagnetic resonance field is decreased by 70 Oe compared to flexible Cu/YIG heterojunctions. Meanwhile, it shows a wide tunable amplitude of 110 Oe under the flexible bending stresses, which is induced by the sensitive interface effect of Pt (3 nm)/YIG heterojunctions. The saturation magnetization of Pt/YIG heterojunctions is negatively correlated with Pt thickness rather than the relative stability of Cu/YIG heterojunctions, depending on the magnetic proximity effect. It brings greater application possibilities for flexible stress-sensitive magnetic oxides in spin logic electronic devices.

Synthesis Methods and Property Control of Two-Dimensional Magnetic Materials

Two-dimensional (2D) magnetic materials have been demonstrated to have excellent chemical, optical, electrical, and magnetic properties, particularly in the development of multifunctional electronic and spin electronic devices, showcasing tremendous potential. Therefore, corresponding synthesis techniques for 2D magnetic materials that offer high quality, high yield, low cost, time-saving, and simplicity are highly desired. This review provides a comprehensive overview of recent research advances in preparation of magnetic 2D materials, with a particular focus on the preparation methods employed. Moreover, the characteristics and applications of these magnetic materials are also discussed. Finally, the challenges and prospects of synthesis methods for magnetic 2D materials are briefly addressed. This review serves as a guiding reference for the controlled synthesis of 2D magnetic materials.

Transport characterization of magnetic phase transition in Mn<sub>3</sub>Sn thin films

In recent years, topological antiferromagnetic material with hexagonal Kagome structure has attracted great research interest due to its unique properties. Although its net magnetic moment is close to zero, the topological antiferromagnet exhibits the strong magnetoelectric, the magneto-optical, and the magnetothermal effect, with a strength comparable to that of ferromagnetic material, which makes it highly valuable for various applications. After several years of extensive studies, it has been realized that most of the unique properties of topological antiferromagnet are actually closely related to its magnetic structure. However, it has been found that the magnetic structure of the material is highly sensitive to its chemical composition and growth condition. Therefore, it is crucial to develop a universal and simple method of measuring the magnetic structure and determining the magnetic phase transition of hexagonal Kagome topological antiferromagnetic material, which can severe as a good supplement for the current high-energy neutron diffraction approach that is not accessible for ordinary laboratories. In this study, we have successfully prepared high-quality (<inline-formula><tex-math id="M3">\begin{document}$ 11\bar{2}0 $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="6-20231766_M3.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="6-20231766_M3.png"/></alternatives></inline-formula>)-oriented hexagonal Kagome antiferromagnetic Mn<sub>3</sub>Sn thin films on (<inline-formula><tex-math id="M4">\begin{document}$1 \bar{1} 02$\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="6-20231766_M4.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="6-20231766_M4.png"/></alternatives></inline-formula>)-oriented Al<sub>2</sub>O<sub>3</sub> single crystal substrates by using the pulsed laser deposition method. After systematically measuring how the magnetic and transport properties of the Mn<sub>3</sub>Sn thin film change with temperature, it is found that its magnetization curve, Hall resistivity curve, and magnetoresistance curve exhibit certain anomalous features at some or all of its three magnetic phase transition temperatures. These features can serve as good evidences of magnetic phase transitions in this hexagonal Kagome antiferromagnetic Mn<sub>3</sub>Sn thin film, or even could be used to measure the temperatures of these magnetic phase transitions. Our work contributes to the further advancement of the application of hexagonal Kagome topological antiferromagnetic materials to spin electronic devices.

Magnetic-field-induced spin reorientation in TmFeO<sub>3</sub> single crystals

TmFeO<sub>3</sub> exhibits rich physical properties such as magneto-optical effect, multiferroicity, and spin reorientation, making it possess significant research value in condensed matter physics and materials science. In this study, we utilize a time-domain terahertz magneto-optical spectroscopy system to investigate the changes in spin resonance frequency of TmFeO<sub>3</sub> single crystal at <i>T</i> = 1.6 K under external magnetic fields in a range of 0–7 T. The TmFeO<sub>3</sub> sample is grown in an optical floating zone furnace and its crystallographic orientation is determined by using back-reflection Laue X-ray photography with a tungsten target. The measurement setup is a self-built time-domain terahertz magneto-optical spectroscopy system, with magnetic fields in a range of 0–7 T, temperatures in a range of 1.6–300 K, and a spectral range of 0.2–2.0 THz. A pair of 1 mm-thick ZnTe nonlinear crystals is used to generate and detect terahertz signals through optical rectification and electro-optic sampling technique. The system variable temperature and magnetic field are controlled by a superconducting magnet. In experiments, a linearly polarized terahertz wave is vertically incident on the sample surface, and its magnetic component <i>H</i><sub>THz</sub> is parallel to the sample surface. By rotating the sample, the angle (<i>θ</i>) between macroscopic magnetic moment <i> <b>M</b> </i> and <i>H</i><sub>THz</sub> can be tuned, achieving selective excitations of the two modes, that is, <i>θ</i> = 0 for q-AFM mode and 90° for q-FM mode. Terahertz absorption spectrum results indicate that as the magnetic field increases, the quasi-ferromagnetic resonance (q-FM) of TmFeO<sub>3</sub> single crystal shifts towards high frequencies, and quasi-antiferromagnetic resonance (q-AFM) transits to q-FM under low critical magnetic fields (2.2–3.6 T). Through magnetic structure analysis and theoretical fitting, it is confirmed that the magnetic moment of the single crystal undergoes magnetic field induced spin reorientation. This study is helpful in better understanding of the regulation mechanism of the internal magnetic structure of rare earth ferrite under the combined action of external magnetic field and temperature field, and also in developing related spin electronic devices.

First-principles study of the surface and optical properties of Heusler alloys Ru2XAl (X=Mn, Zr, Ti, Hf)

Heusler alloys have excellent application prospects in fabricating spin electronic devices due to their remarkable properties. However, there is currently a lack of research on the surface properties and optical properties of Heusler alloys. In this study, we calculate the surface properties, band structure, and optical properties of four Ru-based Heusler alloys, Ru2XAl(X=Mn, Zr, Ti, Hf), using the first-principle density functional method within GGA approach. The surface properties calculation indicates that the (100) and (111) terminations with X atoms have stronger surface activities and more stable surface structures. The calculation results of the band structure confirm that the four Heusler alloys have metallic properties, which agree with the calculated results of their photoconductivity. In addition, the alloys Ru2TiAl, Ru2HfAl, and Ru2ZrAl exhibit peak reflectivity in the near-infrared spectrum, while Ru2MnAl manifests its highest reflectivity in the ultraviolet range.

Improving the Luminescence Performance of Monolayer MoS2 by Doping Multiple Metal Elements with CVT Method.

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) draw much attention as critical semiconductor materials for 2D, optoelectronic, and spin electronic devices. Although controlled doping of 2D semiconductors can also be used to tune their bandgap and type of carrier and further change their electronic, optical, and catalytic properties, this remains an ongoing challenge. Here, we successfully doped a series of metal elements (including Hf, Zr, Gd, and Dy) into the monolayer MoS2 through a single-step chemical vapor transport (CVT), and the atomic embedded structure is confirmed by scanning transmission electron microscope (STEM) with a probe corrector measurement. In addition, the host crystal is well preserved, and no random atomic aggregation is observed. More importantly, adjusting the band structure of MoS2 enhanced the fluorescence and the carrier effect. This work provides a growth method for doping non-like elements into 2D MoS2 and potentially many other 2D materials to modify their properties.

Adsorption of metals on Si9C15 monolayer for optoelectronic applications

Two dimensional materials have a bright application prospect in the field of optoelectronic devices. As a newly discovered polymorph of the third-generation semiconductor SiC, Si9C15's single-layer structure may have excellent optoelectronic properties, which has significant practical implications for the study of two-dimensional Si9C15. By employing the first-principles density functional theory, a comprehensive analysis is performed on the electronic, magnetic, work function, and optical absorption properties of a monolayer structure Si9C15 with metal atom adsorption. The adsorption of different metal semiconductors has changed their properties. The adsorption of metal atoms not only reduces the work function of Si9C15, but also enhances its light absorption ability in the visible light region. This finding highlights the potential for enhancing the optical properties of the Si9C15 system through metal adsorption. The utilization of spherical metal nanoparticles on Si9C15 nanosheets to induce local surface plasmon resonance is an exciting development. The results indicate that the Si9C15 system adsorbed with metal atoms could be employed in the manufacturing of spin electronic device, field emission devices, and solar photovoltaic devices. This suggests that the improved optical properties of the Si9C15 system could have significant implications for advancing these technologies.

Synthesis of diluted magnetic semiconductor ZnS:Cr and ZnS:(Cr+V) nanoparticles for spintronic applications

The design of optimally diluted magnetic semiconductors that exhibit strong ferromagnetism at room temperature is also imperative for developing spintronic devices. In this study, we describe the wet chemical preparation and characterization of ZnS, ZnS:Cr (1 at%), ZnS:Cr (1 at%) + V (1 at%), and ZnS:Cr (1 at%) + V (2 at%) NPs for spin-electronic device applications. Wide-ranging structural analyses suggested the incorporation of both Cr and V ions into the ZnS system. Morphological analysis revealed that the synthesized samples were in the nanoregime with a zero-dimensional alignment. Photoluminescence (PL) spectra displayed diminished luminescence intensity with doing and co-doping. and Electron paramagnetic resonance analysis revealed the presence and augmentation of spins with increasing V co-dopant concentration in the ZnS:Cr (1 at%) host lattice. Vibrating sample magnetometer analysis revealed that the ZnS:Cr (1 at%), ZnS:Cr (1 at%) + V (1 at%), and ZnS:Cr (1 at%) + V (2 at%) NPs exhibited strong ferromagnetism with clear hysteresis loops at room temperature.

Effects of V and Mo dopants on electronic structures, magnetic and optical properties of ZrSe2: First-principles calculations

The electronic structures, magnetic and optical properties of pure ZrSe2, V, Mo mono-doped ZrSe2 (V–ZrSe2, Mo–ZrSe2) and (V, Mo) co-doped ZrSe2 are researched by the first-principles of density functional theory (DFT). The results show that V–ZrSe2 and Mo–ZrSe2 can become magnetism, and the total magnetic moments generated are 1.76 μB and 2.06 μB by V–ZrSe2 and Mo–ZrSe2, respectively. The stable ferromagnetism (FM) properties in (V, Mo) co-doped ZrSe2 are mainly derived from the hybridization of V:3 d, Se:4p and Mo:4 d orbitals. Due to the doping of V and Mo atoms, which improves electric conductivity and makes up the infrared absorption coefficient of pure materials. In addition, we find that biaxial strain changes the electronic structure of (V, Mo) co-doped ZrSe2 monolayer, and the ferromagnetism of the system be changed significantly. In conclusion, (V, Mo) co-doped ZrSe2 magnetic semiconductor has excellent potential in spin electronic devices.

The optimal tuning of electronic structure, magnetic, and optical properties of (Fe, V + VO/VSn) co-doped SnO2 via first-principles calculations.

Dilute magnetic semiconductors (DMSs) with both charge and spin degrees of freedom have emerged as promising candidates in the spintronic industry. However, the Curie temperature below room temperature and uncertainty about the origin of ferromagnetism hinder the application of DMSs. To address these issues, we explored a better SnO2-based co-doped method (Fe, V + VSn) using ab initio calculations. The calculation results show that the Sn13FeVO32 (Fe, V + VSn) has a high Curie temperature (716K), good ferromagnetic properties, stronger covalency of bonds, and better optical transparency in the visible light range. In addition, the holes or electrons generated by the complexes in the (Fe, V + VO/VSn) co-doped system cause a spin-polarized double exchange effect in the Fe-3d, V-3d, and O-2p orbitals, which leads to magnetism of the co-doped systems. The static dielectric constant ɛ1(0) of the system increases after doping. Among them, Sn14FeVO31 (Fe, V + VO) has the largest ɛ1(0), indicating that Sn14FeVO31 has the strongest polarization ability and better photocatalytic properties. In Sn14FeVO31, the imaginary part of the dielectric function and the absorption spectrum all have new peaks in the low-energy region, which are caused by the jump of electrons from the guide band of the spin-polarized impurity energy level. This paper proposes a new method for preparing dilute magnetic semiconductors in spin electronic devices with high room temperature ferromagnetic properties and excellent optical properties through the (Fe, V + VO/VSn) co-doped SnO2.

NdAlSi: A magnetic Weyl semimetal candidate with rich magnetic phases and atypical transport properties

Magnetic Weyl semimetals (MWSMs) have attracted significant attention due to their intriguing physical properties and potential applications in spin-electronic devices. Here we report the characterization of NdAlSi including transport, magnetization, and heat capacity on single crystals, as well as band structure calculation. It is a newly proposed MWSM candidate which breaks both time-reversal and spatial inversion symmetries. A temperature--magnetic field phase diagram is experimentally established. Remarkably, on the angular magnetoresistance, a twofold symmetric sharp peak instead of a smooth variation is observed across the phase boundary between the ferrimagnetic and antiferromagnetic phases. We argue that the tunability of both the electronic structure and magnetic properties in NdAlSi is crucial for realizing such a behavior. Our results indicate that $4f$-electron-based MWSM could provide a unique platform to explore new and intriguing quantum phenomena arising from the interaction between magnetism and electron topology.