Spin-dependent Conductance Research Articles

Spin-dependent conductance and magnetoresistance ratio in two magnetic-barrier structures

An improved transfer matrix method is developed with modular matrices for rectangular electric and magnetic vector potentials, as well as the δ-function like potentials. As an example, the spin-dependent conductance in two-dimensional electron gas under modulation of two magnetic barriers are recalculated and compared with those illustrated in (Wang et al. Chin. Phys. B 19, 037301(2010)). The previous results are found inaccurate, their transfer matrix was derived for slowly varying magnetic vector potential, which is inappropriate for δ-function like Zeeman interaction potentials. Furthermore, the last transfer matrix of eq. (4) is also found incorrect, and the Zeeman interaction is wrongly expressed and mistakenly enhanced about (1/0.067 ≈ 15) times. Our improved method here is general and is demonstrated very fast forevaluating various spin-dependent transport properties in complex hybrid magnetic–electric structures.

Conductance, spin and valley polarizations through 8-Pmmn borophene magnetic barriers

Conductance, spin and valley polarizations through 8-Pmmn borophene barriers in the presence of external Rashba spin–orbit interaction (RSOI) and magnetic field are investigated theoretically. The spin-dependent conductance shows a strong dependence on the direction of the 8-Pmmn borophene barriers, the strength of RSOI and value of the magnetic field strength. For two barriers unlike to one barrier, the spin-dependent conductance exhibits a prominent oscillatory behavior. For the parallel configuration, the dependence of conductance on the magnetic field is more than for the antiparallel configuration. Transmission probability without and with spin rotation decreases drastically with the increase in the value of the magnetic field, so that for sufficiently large magnetic fields, the transmission probability is zero for most electron incidence angles. The size and direction of the spin and valley polarization can be tuned by the strength of RSOI, direction of the 8-Pmmn borophene barriers, size of the magnetic field and type of parallel or antiparallel configuration. In certain conditions, full valley polarization can be achieved in the proposed structure.

Effect of the magnetic field on the conductance and spin polarization in phosphorene superlattice

The spin-dependent conductance and spin polarization are investigated theoretically in a phosphorene superlattice in the presence of external magnetic field and Rashba interaction. It is demonstrate that, the spin-dependent conductance with and without spin-flip as well as spin polarization can be effectively controlled by changing the magnetic field strength and the number of the superlattice barriers. For small magnetic field strength, the conductance for with and without spin-flip shows an oscillating behavior as increasing the strength of the Rashba interaction, and by increasing the number of barriers, the oscillating behavior becomes prominent. Further, when the magnetic field is greater than a limit value, the spin conductance will be zero. The size of the spin-dependent transmission window in the phosphorene superlattice under external magnetic field decreases drastically. The magnitude, sign and behavior of the spin polarization can be tuned by the amount of the external magnetic field.

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance.

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

Ultrafast switching in spin field-effect transistors based on borophene nanoribbons.

Borophene, owing to the high mobility and long spin coherent length of its carriers, presents significant opportunities in ultrafast spintronics. In this research, we investigate the spin-dependent conductance of a Datta-Das field-effect transistor (FET) based on an armchair β12-borophene nanoribbon (BNR) using the tight-binding (TB) Hamiltonian in combination with the non-equilibrium Green's function (NEGF) method. The spin FET electrodes are magnetized by ferromagnetic (FM) insulators arranged in both parallel and anti-parallel configurations. This device acts as a controllable spin filter in the presence of Rashba spin-orbit coupling (SOC) for both configurations and its spin current is well modulated by a gate voltage and the strength of the Rashba SOC. For anti-parallel configurations, an energy gap emerges within a certain range of incoming electron energy which can disappear for electrons with flipped spin under the Rashba SOC. Furthermore, our findings indicate that the electron-electron (e-e) interaction helps the spin precession of electrons injected into the spin FET channel, thereby strengthening the Rashba SOC effect. Notably, a gate voltage can adjust the current-voltage (I-V) characteristics of this device. Finally, our calculations demonstrate that under the same conditions, the current magnitude and Ion/Ioff ratio of borophene spin FETs are several times higher than those of graphene and silicene spin FETs.

Structural, elastic, mechanical, electronic, and magnetic properties of In2NbX6 (X = Cl, Br) variant perovskites

AbstractThis article is about the study of structural, elastic, mechanical, electronic, and magnetic properties of two variant perovskites In2NbX6 (X = Cl, Br) using density functional theory. To the best of our information all calculations were carried out for the first time. The results established the cubic state stability of the present compounds in the FM phase. The thermodynamic and perovskites phase stabilities are respectively confirmed from negative values of formation energies and tolerance factor. The calculated elastic constants C11, C12, and C44 confirmed the mechanical stability of In2NbX6 compounds. The mechanical properties confirmed ductile nature of In2NbCl6 and brittle nature of In2NbBr6. The electronic properties showed that these compounds were metallic in spin up state and semiconductor in spin down state. The magnetic moments were calculated as 1 μB for both the compounds majorly associated with the Nb atom. The spin dependent electrical conductivity was calculated via BoltzTrap code. Besides half metallic nature, high spin dependent electrical conductivities reveals that In2NbX6 variant perovskites compounds are suitable for spintronic applications.

Conductance and polarization in an 8-Pmmn borophene-based superlattice

We theoretically investigate the effect of the Rashba interaction on the conductance as well as the valley and spin polarization in an 8-Pmmn borophene superlattice by solving the Dirac–like equation and using the transfer matrix approach. The valley and spin-dependent conductance and spin polarization are effectively controlled by changing the direction of superlattice. The number of the quantum electrostatic potential plays an essential role in quantum transmission properties. Furthermore, in such a superlattice, the conductance of the electrons with spin rotation can be easily adjusted by the Rashba strength, direction of superlattice and electrostatic potential. Thus, borophene superlattice with Rashba interaction can act as a spin and valley splitter. Our work provides a new structure for spin-flip and can be useful for future spintronics and valleytronics applications.

Tuning the spin transport properties of a magnetic MoS2 superlattice

In this study, the author theoretically investigates the effect of the external Rashba interaction on the properties of spin transport in a magnetic MoS2 superlattice. The results show that the spin conductance of the magnetic MoS2 superlattice heavily relied on the applied external magnetic field in the presence of more than one barrier. Moreover, the spin conductances with and without the spin-flip exhibited a gap, the size of which increased with the number of the barriers in the superlattice. The spin-dependent conductance in the magnetic MoS2 superlattice could be controlled by changing the number of barriers to the superlattice and the strength of the Rashba interaction. The spin polarization exhibited oscillating behavior in terms of the energy of the incident electron and the strength of the Rashba interaction. Remarkably, full-spin polarization could be achieved by using an MoS2 superlattice under an external magnetic field. The results of this study confirm that the magnetic MoS2 under the Rashba interaction can be used in spintronics and electronics devices in the future.

Spin-dependent polarization and quantum Hall conductivity in decorated graphene: influence of locally induced spin–orbit-couplings and impurities

We study spin transport through graphene-like substrates in the presence of one or several, locally induced spin–orbit coupling (SOC) terms resulting from periodically placed strips, on their top and decorated with a random distribution of impurities. Intrinsic SOC, Rashba SOC and/or pseudo-spin-inversion-asymmetry coupling are considered. A systematic investigation of the spin conductance identifies the main SOC terms which lead to its energy dependence as well as the extent to which the impurity concentration and each SOC term can affect or tune it, In addition, the spin current flow is considered in the presence of different SOC impurities and their related group symmetry such C 6v , C 3v , D 6h and D 3h . Further, we show that the quantum spin-Hall effect (QSHE) related to the spin edge states depends only on the spin character when the PIA and ISO terms are not sublattice resolved, and on both the spin and sublattice character when they are. In addition, we show that the RSO term plays a major role in obtaining edge states that are either protected on both edges or only on one edge against backscattering. This Rashba term creates an anticrosing gap that affects the symmetry in the edge localizations and leads to half-topological states. The results can facilitate the experimental choice of appropriately decorated strips to (i) develop spin-transistor devices by tuning the Fermi energy, (ii) control the robustness of the QSHE against backscattering even in the presence of on-site sublattice asymmetry induced by a transverse electric field or functionalizations, and (iii) provide a strong theoretical support for spintronic quantum devices.

Spin polarization through axially chiral linkers: Length dependence and correlation with the dissymmetry factor.

The chiral-induced spin selectivity (CISS) effect relates to the spin-selective electron transport through chiral molecules; therefore, the chiral molecules act as spin filters. In past studies, correlation was found between the magnitude of the spin filtering and the intensity of the circular dichroism (CD) spectrum (the first Compton peak) of the molecules. Since the intensity of the CD peak relates to both the magnitude of the electric and magnetic dipole transitions, it was not clear which of these properties correlate with the CISS effect. This work aims at addressing this question. By studying the spin-dependent conduction and the CD spectra of the thiol-functionalized enantiopure binaphthalene (BINAP) and ternaphthalene (TERNAP), we found that both BINAP and TERNAP exhibit a similar spin polarization of 50%, despite the first Compton peak in TERNAP being almost twice as intense as the peak in BINAP. These results can be explained by the similar values of their anisotropy (or dissymmetry) factor, gabs , which is proportional to the magnetic transition dipole moment. Hence, we concluded that the CISS effect is proportional to the transition dipole moment in chiral molecules, namely, to the dissymmetry factor.

Switching modulation of spin transport in ferromagnetic tetragonal silicene

We study the band structure and transport properties of ferromagnetic tetragonal silicene nanoribbons by using the non-equilibrium Green's function method. The band structure and spin-dependent conductance are discussed under the combined effect of the external electric field, potential energy, exchange field and the spin-orbit coupling. One can easily realize a phase transition from a semimetallic to a semiconducting state by changing the transverse width of the nanoribbon. Separation of spin-dependent conductances arises from the effect of exchange field and the spin-orbit coupling, while zero-conductance behaviors exhibit spin-dependent band gaps induced by the electric field. We propose a device configuration of four-terminal tetragonal silicene nanoribbon with two central channels. It is found that spin current can be controlled by utilizing two switches. The switch with a high potential barrier can block electrons flowing from the central scattering region into other terminals. Interestingly, applying only one switch can realize spin-dependent zero conductance and large spin polarization. Two switches can provide multiple operations for controlling spin-dependent transport properties. The two-channel ferromagnetic tetragonal silicene nanoribbon can realize an effective separation of spin current, which may be a potential candidate for spintronic devices.

Magnetic moment impact on spin-dependent Seebeck coefficient of ferromagnetic thin films

Magnetic materials may be engineered to produce thermoelectric materials using spin-related effects. However, clear understanding of localized magnetic moments (µI), free carriers, and Seebeck coefficient (S) interrelations is mandatory for efficient material design. In this work, we investigate µI influence on the spin-dependent S of model ferromagnetic thin films, allowing µI thermal fluctuations, ordering, and density variation influence to be independently investigated. µI influence on free carrier polarization is found to be of highest importance on S: efficient coupling of free carrier spin and localized magnetic moment promotes the increase of S, while spin-dependent relaxation time difference between the two spin-dependent conduction channels leads to S decrease. Our observations support new routes for thermoelectric material design based on spin-related effects in ferromagnetic materials.

Effect of the Rashba spin-orbit coupling on spin transport properties in WSe2 superlattice

We report a theoretical study of the spin and valley dependent transport properties in a WSe2 superlattice with external Rashba spin-orbit interaction (ERSOI). It is shown that the conductance with and without spin flip strongly depends on the ERSOI and has an oscillatory behavior with respect to ERSOI strength, thus WSe2 superlattice can act as a spin-converter. Also, the magnitude of spin-dependent conductance can be efficiently controlled by potential barrier height and number of superlattice barriers. Results show that the valley and spin polarization depend on the number of superlattice barriers and exhibit an oscillatory evolution versus ERSOI strength and potential barrier height. These results clarify that a WSe2 superlattice can be useful for the design of novel valleytronic and spintronic devices.

Even-odd chain dependent spin valve effect on a zigzag biphenylene nanoribbon junction

The even–odd chain dependent spin valve effect was forecasted in some honeycomb graphene-like materials with zigzag edges. In this study, we confirm that the even–odd chain related spin valve phenomenon also exists in a zigzag biphenylene nanoribbon (ZBN) junction. By modeling the ZBN junction with different even and odd chains subjected to a local Rashba spin–orbit coupling (SOC) and a homogeneous magnetic field, we calculate the spin dependent conductance spectra between the source and the drain electrodes and find that the spin up (down) electron can be inhibited (allowed) to flow through the even (odd)-chain ZBN junction, which can be explained by the combined effect between the pseudo-parity conservation and magnetic field-tunable energy gap in the energy band theory. The switch on and off states of spin valve can be modulated by the most system parameters such as the Fermi energy, magnetic flux, and Rashba SOC. Furthermore, the ZBN can act as a gate-tunable spin generator and spin filter, in which we can get 100% polarized spin up (down) electrons with (no) spin-flipping from the even-chain ZBN junction, and only produce 27% polarized spin-converting electrons from the odd-chain ZBN junction. Our findings might be useful in designing future multi-parameter controllable spin valves by using the new carbon allotropes.

Observation of magnetoconductivity with terahertz probes for ferromagnetic Fe films

Ultrafast characterization of spin-dependent transport behavior in ferromagnetic systems without contact probes has been of strong demand, recently. We have experimentally investigated spin-dependent complex conductivity for ferromagnetic Fe films of various thickness by means of terahertz time-domain transmission spectroscopy. Comparison of the transmitted terahertz wave amplitude and the spin-dependent conductivity reveals that the magnetization state of films effectively determines the complex conductivity. Non-invasive observation of spin-dependent conductivity by contact-free terahertz probe method is proven to be promising in further investigating spintronic materials, particularly on an ultrafast timescale.

Spin injection by spin–charge coupling in proximity induced magnetic graphene

Within the field of spintronics major efforts are directed towards developing applications for spin-based transport devices made fully out of two-dimensional materials. In this work we present an experimental realization of a spin-valve device where the generation of the spin signal is exclusively attributed to the spin-dependent conductivity of the magnetic graphene resulting from the proximity of an interlayer antiferromagnet, chromium sulfide bromide (CrSBr). We clearly demonstrate that the usage of the conventional air-sensitive 3D magnetic contacts can be fully avoided when graphene/CrSBr heterostructures are employed. Moreover, apart from providing exceptionally long spin relaxation length, the usage of graphene for both generation and transport of the spin allows to automatically avoid the conductivity mismatch between the source and the channel circuits that has to be considered when using conventional low-resistive contacts. Our results address a necessary step in the engineering of spintronic circuitry out of layered materials and precede further developments in the area of complex spin-logic devices. Moreover, we introduce a fabrication procedure where we designed and implemented a recipe for the preparation of electrodes via a damage-free technique that offers an immediate advantage in the fields of air-sensitive and delicate organic materials.

Spin transport properties of phosphorene multiple quantum barrier structure under strain and Rashba spin-orbit interaction

The effect of the strain and Rashba spin-orbit coupling (RSOC) on the spin-dependent transport properties, is investigated in monolayer phosphorene with multiple quantum barrier structure. It is found that the spin-dependent conductance, without and with the spin-flip, has an oscillatory behavior with the RSOC, and the oscillating feature of the conductance increases by increasing the number of the barriers. The spin-dependent conductance presents high sensitivity to strain. The results showed that the spin-dependent conductance in terms of the strain diminished with increasing the number of the barriers. It is demonstrated that the full spin-polarized current can be realized in monolayer phosphorene with multiple quantum barrier structure under strain. Specifically, the magnitude and sign of the spin polarization can be efficiently adjusted mechanically and by an external electric field. These transport properties indicate that the phosphorene multiple quantum barrier structure can be an ideal candidate for future spintronics and straintronic applications.

Effects of local exchange field in different directions on spin transport of stanene

Topological insulator is a new quantum state of matter in which spin-orbit coupling gives rise to topologically protected gapless edge or surface states. The nondissipation transport properties of the edge or surface state make the topological device a promising candidate for ultra-low-power consumption electronics. Stanene is a type of two-dimensional topological insulator consisting of Sn atoms arranged similarly to graphene and silicene in a hexagonal structure. In this paper, the effects of various combinations of local exchange fields on the spin transport of stanene nanoribbons are studied theoretically by using the non-equilibrium Green's function method. The results show that the spin-dependent conductance, edge states, and bulk bands of stanene are significantly dependent on the direction and strength of the exchange field in different regions. Under the joint action of the exchange fields in [I: <inline-formula><tex-math id="M12">\begin{document}$ \pm Y $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M12.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M12.png"/></alternatives></inline-formula>, II: <inline-formula><tex-math id="M13">\begin{document}$ +Z $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M13.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M13.png"/></alternatives></inline-formula>, III: <inline-formula><tex-math id="M14">\begin{document}$ \pm Y $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M14.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M14.png"/></alternatives></inline-formula>] direction, the edge states form a band-gap under the influence of the <i>Y</i>-direction exchange field. The band-gap width is directly proportional to the exchange field strength <i>M</i>, and the conductance is zero in an energy range of <inline-formula><tex-math id="M15">\begin{document}$ -M<E<M $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M15.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M15.png"/></alternatives></inline-formula>. When the exchange fields in the direction of <inline-formula><tex-math id="M16">\begin{document}$ +Z $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M16.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M16.png"/></alternatives></inline-formula> or <inline-formula><tex-math id="M17">\begin{document}$ -Z $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M17.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M17.png"/></alternatives></inline-formula> are applied, respectively, to the upper edge region and the lower edge region at the same time, the spin-up energy band and the spin-down energy band move to a high energy region in opposite directions, and strong spin splitting occurs in the edge state and bulk bands. Increasing the strength of the exchange field, the range of spin polarization of conductance spreads from the high energy region to the low energy region. When the directions of the exchange field are [I: <inline-formula><tex-math id="M18">\begin{document}$ \mp Z $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M18.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M18.png"/></alternatives></inline-formula>, II: <inline-formula><tex-math id="M19">\begin{document}$ \pm Y $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M19.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M19.png"/></alternatives></inline-formula>, III: <inline-formula><tex-math id="M20">\begin{document}$ \pm Z $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M20.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M20.png"/></alternatives></inline-formula>], the edge states are spin degenerate, but the weak spin splitting occurs in the bulk bands. Under the condition of different exchange field strengths, the spin-dependent conductance maintains a conductance platform of <inline-formula><tex-math id="M21">\begin{document}$ G_\sigma=e^2/h $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M21.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M21.png"/></alternatives></inline-formula> in the same energy range of <inline-formula><tex-math id="M22">\begin{document}$ -\lambda_{\rm so} <E<\lambda_{\rm so} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M22.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="14-20220277_M22.png"/></alternatives></inline-formula>.

Tunable giant magnetoresistance ratio in bilayer CuPc molecular devices.

We investigate the influence of the distance between the buffer layer and the central molecule on the electrical transport, spin-filter transport, magnetoresistance effects and thermoelectric properties of a bilayer CuPc molecular device with V-shaped zigzag-edged graphene nanoribbon (VZGNR) electrodes by combining density functional theory and the non-equilibrium Green's function. The results show that the spin-dependent total conductance and spin filter efficiency of the bilayer CuPc molecular device reach a maximum with a parallel spin configuration (PC) when the carbon atom at the edge of the electrode is in the center of the carbon atom at the edge of the bilayer molecules due to the stronger coupling interaction between the double-layer molecules and the leads. Moreover, the spin polarization of the bilayer CuPc molecular device is reversed at certain distances; there is a minimum spin filter efficiency (SFE) of −99.93448% and a maximum SFE of 97.91% observed in the anti-parallel spin configuration (APC) of the device and there is a minimum SFE of −26.03175% and a maximum SFE of 99.99996% observed with the PC at zero bias. The SFE oscillates with increasing considered bias voltage in the PC and APC when the distances are d = 0 Å and d = −1.06 Å, and a negative differential resistance (NDR) effect was observed. For the PC and APC, there is a giant magnetoresistance (MR) effect and the MR ratio exceeds 5.21 × 107% (99.9996%), and the MR ratio oscillates with increasing considered bias voltage when d = 0 Å. The MR ratio could be reserved by applying a certain bias voltage. These transport behaviors can be well understood by analyzing the transmission spectra, projected density of states and scattering states. There are pure spin Seebeck coefficients and pure charge Seebeck coefficients at certain temperatures when the distances are certain values, which means that the corresponding temperature differences could produce pure spin current and pure charge current, respectively. Our results provide new ideas for designing ultrahigh-performance spintronic molecular devices.

Controllable spin filtering and half-metallicity in β12 -borophene nanoribbons

The experimental observation of the Dirac fermion states in $\beta_{12}$-borophene sheets and the discovery of their novel topological properties properties have made them a promising candidate for spintronic applications. Here, by combining non-equilibrium Green's function (NEGF) and tight-binding (TB) approximation, we study the charge and spin transport properties through a $\beta_{12}$-borophene nanoribbon (BNR) with the different edge shapes. We show when a BNR exposed to a nonlocal exchange magnetic field, the spin filtering occurs for both spin-up and spin-down so that the spin direction of transmitted electrons could be controlled by adjusting the energy of incoming electrons with the help of an external backgate voltage. It is found that an armchair BNR (ABNR) in the simultaneous presence of a transverse electric field and a nonlocal exchange field indicates a half-metallic nature which is electrically controllable. Moreover, the influence of local exchange field fields is evaluated by exposing the edges of ABNR to ferromagnetic strips with parallel and antiparallel configurations. Our findings show that the edge manipulations in ABNRs lead to the emergence of a giant magnetoresistance and a perfect spin filter. Finally, we studied the effects of edge vacancies and Anderson disorder on the spin-dependent conductance of an ABNR and find that the perfect spin polarization is not destroyed in the presence of Anderson disorder and various single vacancies. Our results reveal the outstanding spin transport properties of ABNRs for future spintronic devices.