We propose a novel device structure with a WO3/NiOx bilayer to improve the hole injection ability in QLEDs fabricated mainly by a solution-based process. First, we employed a spin-coated NiOx thin film as a hole injection layer (HIL) to replace Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) PEDOT:PSS which corrodes indium tin oxide (ITO) used as an anode in QLEDs. We showed a simply optimized annealing process, instead of a rather complicated process like doping, can improve the electrical conductivity of the NiOx thin film. The reason for the dependency of conductivity on the post-metallization annealing is because of the change of the total amount of Ni vacancy in the NiOx thin film as a function of annealing temperature: The electrical conductivity of the NiOx thin film annealed at 275 °C was the best in this work. Second, we inserted the WO3 thin film in between ITO electrode and NiOx HIL to form an ITO/WO3/NiOx structure which reduces the hole injection barrier to 0.35 eV, resulting in the excellent characteristic in view of charge balance. Finally, we measured the properties of QLEDs with the WO3/NiOx bilayer to check the effects of the proposed device structure and showed the substantial improvement of the electrical conductivity of NiOx, the luminance, and the current efficiency of the QLEDs.