Abstract In this work, TiO2 thin films deposited by the atomic layer deposition (ALD) method were treated with a special N2O plasma surface treatment and used as the gate dielectric for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The N2O plasma surface treatment effectively reduces defects in the oxide during low-temperature ALD growth. In addition, it allows oxygen atoms to diffuse into the device cap layer to increase the barrier height and thus reduce the gate leakage current. These TiO2 films exhibit a dielectric constant of 54.8 and a two-terminal current of 1.96 × 10−10 A mm−1 in 2 μm distance. When applied as the gate dielectric, the AlGaN/GaN MISHEMT with a 2 μm-gate-length shows a high on/off ratio of 2.59 × 108 and a low subthreshold slope (SS) of 84 mV dec−1 among all GaN MISHEMTs using TiO2 as the gate dielectric. This work provides a feasible way to significantly improve the TiO2 film electrical property for gate dielectrics, and it suggests that the developed TiO2 dielectric is a promising high-κ gate oxide and a potential passivation layer for GaN-based MISHEMTs, which can be further extended to other transistors.
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