Space Charge Limited Current Conduction Research Articles

High gain NiO/ZnO heterojunction photodiodes operated in Deep-ultraviolet region

Epitaxially matched (0001) Al2O3 single substrates are utilized to design p-n heterojunctions (p-NiO/n-ZnO) as they offer low defect density for device fabrication due to small lattice mismatches. Using the radio frequency sputtering technique, the NiO/ZnO thin film-based heterojunction has been fabricated by varying the n-type film's (ZnO) thickness for ultra-violet (UV) photodiode application. It has been investigated how different ZnO film thicknesses affect junction parameters and photoresponse properties. The high photosensitivity (∼ 104), enhanced current gain (∼ 105) and fast response obtained at very low UV intensity (0.62μW/cm2) at 300 nm wavelength are attributed to the internal gain mechanism (recombination tunnelling and space-charge limited current conduction with the remarkable effect of the presence of excess free oxygen) in these devices. The prepared heterojunction photodiode with high speed and deep-UV sensitivity can be a potential solution for visible blind UV detection.

Smart alloy metalized novel photonic NEMS photodiode with CuAlV/n-Si/Al junction structure

In this work, a novel smart (shape memory) alloy metalized photonic silicon wafer photodiode with Schottky type CuAlV/n-Si/Al contact structure as a nano-electro-mechanical-system (NEMS) photodevice was fabricated by thermal evaporation technique. The CuAlV memory alloy used as the top Schottky metal contact electrode was produced by arc melting technique and a subsequent quenching in an iced-brine water medium, and its shape memory effect characteristics were revealed by thermal and structural tests. The fabricated photonic NEMS photodiode was characterized by different photo-electrical (I-V, I-t) and frequency/time dependent and illuminated capacitance (C–V/f, C-t, C–V/ill.) and conductance-voltage (G-V) measurements under different frequencies and artificial light intensity power conditions. The I-V tests showed an excellent current rectifying ability and very well net photocurrent generation features of the photodiode. The specific detectivity of the photodiode was found as high as almost approaching 1011 Jones. The SCLC (space charge limited current conduction) analyses made on the double-log I-V plots of the photodiode revealed that the trap-filling TFL-SCLC and trap-free SCLC current conduction mechanisms are the two prevailing conduction mechanisms in the forward bias voltage region. The density of interface states (Dit) of the fabricated photodiode was determined. Moreover, an excellent reproducibility of light-induced photocapacitance formation of the novel photodiode was demonstrated by C–V/t measurements under different artificial light power intensities.

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

In this study, Zr-doped HfO2 (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO2 and ZrO2 cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~103 A, and as well as good endurance (300 cycles) and retention (>103 s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.

Influence of SWCNT on the Electrical Behavior of an Environmentally Friendly CH3NH3SnI3 Perovskite-Based Optoelectronic Schottky Device

The lead-free tin-based halide perovskite CH3NH3SnI3 has recently been explored in a wide range of optoelectronic device applications. However, the charge conduction process of the CH3NH3SnI3 perovskite layer is hindered by the presence of vacancies resulting from tin oxidation, sample defects, and trap states, which limit the performance of the device. In this study, we introduced single-walled carbon nanotubes (SWCNTs) into the perovskite to enhance the charge conduction of the device. To demonstrate this, CH3NH3SnI3 perovskite and its composites with SWCNTs were synthesized and used as an active layer in a sandwich-structured device. Electrical measurements show that the device based on SWCNTs exhibits superior performance compared to the device consisting solely of perovskite. Incorporating SWCNTs into the device improves conductivity and reduces series resistance. Specifically, in the absence of light, SWCNTs increase the conductivity from 3.8 × 10–5 to 1.6 × 10–4 S/m and decrease the series resistance from 348.25 to 34.80 Ω. Under illumination, SWCNTs further increase conductivity to 4.0 × 10–4 S/m from 8.1 × 10–5 S/m and decrease series resistance to 19.20 Ω from 220.56 Ω. The results suggest that SWCNT can serve as a channel for charge extraction. An analysis of space charge limited current (SCLC) conduction indicates that incorporating SWCNT decreases the trap energy from 103.22 to 79.70 meV under dark conditions. This implies that SWCNT also acts as a filler for trap states. Based on these findings, it appears that the SWCNT-CH3NH3SnI3 perovskite composite has the potential to yield high-performance optoelectronic devices. This study presents an intriguing approach for enhancing carrier transfer with minimal recombination loss and could serve as a source of inspiration for future research in the optoelectronics field.

Investigation of resistive switching properties in acceptor-induced Sr(Fe,Ti)O3 thin film memristor

In this work, the amorphous SrFe0.1Ti0.9O3-δ (a-SFT10) thin film was prepared on FTO/Glass substrate by chemical solution deposition process and then annealed at 500 ℃. Step Profiler measurements and SEM images revealed that the thickness of the a-SFT10 film was around 300 nm. The a-SFT10 thin film was found to have a smooth surface but was not crystalline. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical states of the film. Fe2+ and Fe3+ coexist in a-SFT10, according to XPS results, with Fe3+ being the dominating state. The mixed valence state of iron ions may be related to oxygen vacancies. Current-voltage characteristics were conducted to study the electrical properties. The uniform switching voltages, high switch ratio and good endurance were obtained. The ratio of high and low resistance (RH/RL) is up to 103 under positive bias voltage. The physical mechanisms underlying resistance switching behaviors were also investigated. The results show that the Ohmic, space charge limited current and Schottky conduction mechanisms dominated in different voltage ranges of A-SFT10 films, respectively. The oxygen vacancies associated with the acceptor doping play a significant role in the current characteristic in Au/a-SFT10/FTO/Glass device. Our findings suggest that the device has potential applications in future resistive random access memory.

Electrical characterization of sol-gel La2Ti2O7 films for resistive random access memory applications

The bipolar resistive switching (BRS) devices were investigated for RRAM applications in a MIM structure based on sol-gel derived amorphous La2Ti2O7 (LTO) thin films. The influences on the resistive switching (RS) properties according to the film thickness, electrode, annealing temperature and post metal annealing (PMA) treatment were also discussed. Moreover, RS performance of the RRAMs is affected by the work functions of electrodes. The RS characteristics of the devices are controlled by oxygen vacancies and the content of oxygen vacancies was seriously reduced after annealing, which led to a significant decrease of the endurance. In addition, PMA treatment increased the content of oxygen vacancies attributed to the forming of AlOx interface layer and made Al ions diffuse into the films to form bridges, which improved the RS performance of the devices. Consequently, the sample with 300 °C PMA exhibits the optimized RS properties with maximum switching cycles of 2674, a Ron/Roff ratio of 102, low operating voltages (VSet/VReset = 1.32 V/−1.21 V), and a retention time of over 104 s at room temperature and 85 °C, indicating the promising potential for practical RRAM applications. Conduction mechanism of all devices with Al top electrode were described by trap-controlled space-charge limited current (SCLC) and ohmic conduction.

Dielectric and bipolar resistive switching properties of Ag doped As–S–Se chalcogenide for non-volatile memory applications

In this study, dielectric and bipolar resistive switching properties of the chalcogenide from the Ag–As40S30Se30 system were investigated for potential application in non-volatile memory devices. Preparation of the glasses was done with the use of melt-quenching technique. Current–voltage (I–V) characteristics were determined at different temperatures, and stability of the Ag/chalcogenide sample/Ag structure through constant value of memory window was noticed. Namely, it was observed that a bipolar resistive switching effect is present in the prepared samples with noticeable transitions between high-resistance and low-resistance states when the voltage polarity was changed. Temperature dependent I–V measurements indicated that resistive switching voltage decreases as temperature increases suggesting thermally activated motion of charge carriers. The conduction model fitting results suggested that the Ohmic and space-charge limited current conduction are responsible for resistive switch. Based on the analysis of the obtained results, resistive switching mechanism was explained by using filamentary conduction. In addition, study of dielectrical properties indicated presence of space charge polarization. The presented results show that the synthesized material has properties that suggest them for potential application in non-volatile memory devices.

Observation of Space Charge Limited Current in Schottky Diodes with V2O5 Interfacial Layer Prepared by Radio Frequency Magnetron Sputtering

Electrical properties of V2O5/n-Si Schottky barrier diodes prepared by rf magnetron sputtering of vanadium pentoxide (V2O5) on n-Si wafer have been investigated. The current-voltage (I–V) and capacitance-voltage (C-V) measurements of the diode have been performed in the dark at the room temperature. The saturation current (I0), ideality factor (n), barrier height (ΦB) values of the diode have been determined as 6.68x10-8 A, 1.35, and 0.755 eV, respectively. The series resistance (RS) values from Norde, Cheung and Nicollian & Brews methods have been determined as 199 Ω, 251 Ω, and 144 Ω, respectively. The energy distribution of interface state density (NSS) was determined, and the values of against the energy values of NSS in the vary between EC-0.462 eV and EC-0.713 eV were obtained 4.343x1016 eV-1 cm-2 and 3.282x1015 eV-1 cm-2, respectively. The barrier height and metal oxide thickness (ẟ) values using capacitance-voltage (C-V) measurements in the frequency of 1 MHz has also been calculated as 0.949 eV and 37.4 nm, respectively. The prepared diode showed abnormal diode characteristics, indicating the existence of a space-charge limited (SCL) current. From forward bias I-V characteristics, the ohmic, trapped filled space charge limited current (TFSCLC) and SCLC conduction behaviors were observed at low, middle, and high voltages, respectively. Experimental results indicated that the prepared V2O5 film on n-Si can be utilized in electronic applications.

Elucidation of inter/intra molecular H-bonding mediated charge transportation mechanism in water swelled, hydrophilic organic PVA-Co3O4 nanocomposite films

In this article, we have explored the water molecules mediated charge transportation kinetics in Polyvinyl alcohol (PVA)-Cobalt Oxide (Co3O4) flexible nanocomposite films that rely heavily on the comprehension of surface and interface chemistry. Understanding the chemical interactions at the aqueous hydrophilic PVA-Co3O4 interface is essential in recognising the H-bonding revolution for complex nanocomposite films. The amount of water intake with time evolution has been monitored by the contact angle and wettability measurements. The chemical interactions and the revolution of the weak dangling bonds have been studied by Fourier transform infrared spectroscopy (FTIR), Raman and photoluminance (PL) spectra of the water-swollen hydrophilic PVA-Co3O4 nanocomposite films. The dissociation of water molecules following the fragmentation of inter/intra-molecular dangling bonds is correlated with the water diffusion kinetics and saturation in the sorption capacity of water-swollen PVA-Co3O4 nanocomposite films. The trap-states development due to the interfacial charge accumulation, after absorption of water molecules, are favourable for the trap-assisted space charge limited current conduction (TA-SCLC) mechanism and increase current density ∼ 102 times as compared to the dehydrated nanocomposite films. Meticulous tuning of the strong interfacial interactions and the manifestations of fragmented H+ ions have been identified as the primary craftsman for enhancing the dielectric constant up to eight times in the presence of 30 μL deionized water. Due to the disintegration of the free water molecules at the measurement voltage, the ac conductivity (charge transport) changes from the Jonscher's power law type variation to the jump relaxation model (JRM). The origin and accumulation of H+ ions at the grain boundary interfaces have been analyzed with impedance spectroscopic (IS) studies. An electrical equivalent circuit model is proposed for the water-mediated charge transport mechanism in swelled, hydrophilic, organic nanocomposite films.

Deposition and Characterization of Heterostructures Based on Doped Ferrocene for Film-Device Applications

Novel heterostructures based on ferrocenium hexafluorophosphate (FcPF6), 2,6-dihydroxyanthraquinone (DHAQ) or 2,6-diaminoanthraquinone (DAAQ), zinc phthalocyanine (ZnPc) and nylon 11 were deposited by the high-vacuum thermal evaporation (HVTE) technique. Morphological and mechanical characterizations of these organic heterostructures FcPF6:DHAQ/nylon(ZnPc) and FcPF6:DAAQ/nylon(ZnPc) were carried out. Subsequently, corresponding optical parameters were calculated. The heterostructure with FcPF6:DHAQ presented the lowest optical band gap and fundamental band gap at 1.55 eV and 2.45 eV, respectively. The nylon(ZnPc) layer favors the optical behavior and places these heterostructures within organic low-bandgap semiconductor range. Additionally, devices were fabricated, and their electrical behavior was evaluated. The ITO/FcPF6:DHAQ/nylon(ZnPc)/Ag device exhibits ohmic behavior, and the ITO/FcPF6:DAAQ/nylon(ZnPc)/Ag device exhibits ohmic behavior at low voltages, but at V ≥ 5 V, its behavior changes to Space Charge Limited Current (SCLC). This device carries a maximum current of 0.02 A, three orders of magnitude higher than the current carried by the device with the DHAQ. The SCLC conduction mechanism showed a hole mobility of 9.27 × 10−8 (cm2)/Vs, the concentration of thermally excited holes of 3.01 × 1023 m−3, and trap concentration of 3.93 × 1021 m−3. FcPF6:DHAQ/nylon(ZnPc) and FcPF6:DAAQ/nylon(ZnPc) are potential candidates for organic devices as an emitter layer and active layer, respectively.

Enhanced resistive switching properties of HfAlOx/ZrO2- based RRAM devices

Resistive Random-Access Memory (RRAM) devices are recognized as potential candidates for next-generation memory devices, due to their smallest cell size, high write/erase speed, and endurance. Particularly, the resistive switching (RS) characteristics in oxide materials have offered new opportunities for developing CMOS-compatible high-density RRAM devices. In this study, the RS behavior of HfAlOx/ZrO2 thin films sandwiched structure between TiN bottom electrode and Au top electrodes were investigated. It was found that Au/HfAlOx/ZrO2/TiN stacks were superior in terms of RS performance when compare to Au/HfAlOx/TiN memory stacks. The devices demonstrated a good resistance ratio of high resistance state and low resistance state ∼103 for Au/HfAlOx/TiN and ∼105 for Au/HfAlOx/ZrO2/TiN stacks, respectively. Both stacks showed good retention characteristics (>104 ​s) and endurance (>103 cycles). The experimental current-voltage characteristics fitted with different conducting mechanisms, the linear lower bias region is dominated by ohmic conductivity, whereas the non-linear higher bias region was dominated by space-charge limited current conduction mechanism.

Charging and Discharging Current Characteristics of Polypropylene Film under Varied Electric Fields

Charging and discharging current behavior under high DC electric field in polypropylene (PP) film is closely related to the charge transport and accumulation process, which has an important effect on the electrical insulating properties of PP. In this paper, the dependence of the charging and discharging current of polypropylene films on time and electric field has been comprehensively studied. The results showed that the transient and steady current values of the charging and discharging process increase with the increase of electric field. Dependence of the charging current on the electric field conformed well to the space charge limited current (SCLC) theory with a transition electric field of 270 kV/mm, at which the charge transport changed from ohmic conduction to SCLC conduction. The carrier mobility derived from the discharging current became significantly smaller with increase of the charging electric field. The charge accumulation after discharging was derived from the integration of the difference of the charging and discharging current and it showed an increase with the electric field and increased sharply above a certain threshold electric field (the same as the transition electric field in SCLC theory). It was proved that the conduction current and charge accumulation evolution and dependence on the electric field were mainly determined by the balance between the electrode charge injection process and the bulk conduction process.

Vertical organic phototransistors realized by femtosecond laser ablation patterned metal/insulator bilayer source electrodes: Performance and numerical modeling

Compared with their conventional lateral counter parts, vertical organic phototransistors (VOPTs) have the advantage of fast response speed due to short channel lengths, and may find wide applications in the field of high speed photo detection. By operation of VOPTs, the source electrode plays the vital role. We report on fabrication, characterization and analysis of VOPTs with pulsed laser ablation patterned Al/LiF bilayer source electrode. A maximal photoresponsivity of 760 mA/W, external quantum efficiency ( EQE ) of 145%, specific detectivity of 1.6 × 10 11 Jones were obtained for un-optimized devices. For describing the output characteristics of the devices, a rough numerical model was developed by combining the theory of thermionic emission at metal/organic interface and space charge limited current conduction. • We innovatively achieved the manufacture of vertical channel field-effect transistors by using a porous metal/insulator bilayer source electrode. • We patterned the porous electrode by femtosecond laser ablation. • We proposed a phenomenological device model to getting quantitative insight into the working mechanism of VOPTs. • The un-optimized device in this work showed a maximal photoresponsivity of 760 mA/W, EQE of 145%, specific detectivity of 1.6 × 10 11 Jones.

Facilitation of compliance current for resistive switching and stability of Ta/BaTiO<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/ITO

In this work, Ta/BaTiO<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub> multi-layer thin film is deposited on indium tin oxide substrates by using the magnetron sputtering technology. Obvious resistive switching performance can be observed by increasing the compliance current. Ohmic and space charge limited current conduction mechanisms are demonstrated in Ta/BaTiO<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>. The reproducible and stable resistive switching behaviors in Ta/BaTiO<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/ITO device at <i> I</i><sub>cc</sub> = 10<sup>–2</sup> A are reported. The results show that no obvious degradation is found after 365 successive cycles tests.

Tunable multiferroic and forming-free bipolar resistive switching properties in multifunctional BiFeO3 film by doping engineering

The advent of multiferroic-based materials has opened the plethora for high tunable multifunctional materials and ultra-fast operation for future non-volatile memory technology. Multifunctional rhombohedral Bi0.94Y0.06Fe0.95Mn0.05O3 (BYFMO) film is grown on fluorine-doped tin oxide to investigate the electromechanical and resistive switching properties in Ag/BYFMO/FTO RRAM configuration. UV–visible absorbance spectra reveal the semiconducting behavior of BYFMO, and the band-gap is found to be 2.37 eV. The magnetic hysteresis curve manifests the soft ferromagnetic nature by suppressing the spiral spin modulated structure, supported by MFM imaging. The Y-Mn co-doped BFO possesses highly tunable piezoelectric and ferroelectric features with maximum domains preferred along 710 and 1090. Lateral domain growth is observed with the increase in tip bias voltage. The Ag/BYFMO/FTO RRAM shows distinct bipolar resistive switching behavior at the SET (ON), and RESET (OFF) processes are obtained at voltage VSET = +1.7V and VRESET = −2.8V, respectively. The memory window (ON/OFF) between high resistance state and low resistance state is about ~ 100, which can be sustained up to 100 testing cycles and 103s without any degradation, indicating that the BYFMO based device exhibits better endurance and retention properties. Moreover, the resistive switching mechanism of the device can be well explained by space charge limited current conduction, which is well supported by conducting a filamentary model. With excellent piezoelectric and resistive switching performance, the multifunctional BYFMO has enough potential for future non-volatile memory technology.

Coexistence of memory and threshold switching behaviors in natural milk-based organic memristor

Natural biomaterials have attracted great interest for the fabrication of biocompatible memristors. Here, dense and smooth milk films were deposited on the Pt/SiO2/Si substrate by spin-coating method and resistive switching (RS) devices based milk films with the configuration of Ag/milk/Pt/SiO2/Si are fabricated for the first time. Furthermore, memory RS (MRS) and threshold RS (TRS) effects coexist in the devices, which can be controlled by appropriately setting the compliance current (I cc). The current conduction mechanisms of the devices with MRS and TRS effects are controlled by typical trap-controlled space charge limited current (SCLC) conduction and filamentary conduction mechanism. The good RS performances of the milk-based devices make them promising for sustainable bioelectronics and novel logic device applications.

Solution-Processed Memristor Devices Using a Colloidal Quantum Dot-Polymer Composite

In this study, we demonstrate solution-processed memristor devices using a CdSe/ZnS colloidal quantum dot (CQD)/poly(methyl methacrylate) (PMMA) composite and their electrical characteristics were investigated. Particularly, to obtain stable memristive characteristics with a large current switching ratio, the concentration of CdSe/ZnS QDs in the PMMA matrix was optimized. It was found that with the CdSe/ZnS QD concentration of 1 wt%, the memristor device exhibited a high current switching ratio of ~104 and a retention time over 104 s, owing to the efficient charge trapping and de-trapping during the set and reset processes, respectively. In addition, we investigated the operational stability of the device by carrying out the cyclic endurance test and it was found that the memristor device showed stable switching behavior up to 400 cycles. Furthermore, by analyzing the conduction behavior of the memristor device, we have deduced the possible mechanisms for the degradation of the switching characteristics over long switching cycles. Specifically, it was observed that the dominant conduction mechanism changed from trap-free space charge-limited current conduction to trap charge-limited current conduction, indicating the creation of additional trap states during the repeated operation, disturbing the memristive operation.

Electrical properties of a metal-germanium-topological insulator (metal/n-Ge/p-Bi2Te3) heterostructure devices

This work presents topological insulator (TI) heterojunction Metal/ $$n$$ -Ge/Bi2Te3, by growing a thin TI film of Bi2Te3 on an $$n$$ -type Germanium (Ge) substrate. The microstructure and morphology of the developed Bi2Te3 film are analyzed. The electrical behavior of the Metal/ $$n$$ -Ge/Bi2Te3 heterojunction is examined by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The performance of the heterostructure was examined by depositing different metallic contacts. Metal contacts of aluminum (Al), silver (Ag), and platinum (Pt) were used, and they formed Schottky contact with Ge and an ohmic contact with Bi2Te3. Pt/ $$n$$ -Ge/Bi2Te3 heterostructure was found best in terms of rectification ratio $$(RR)$$ = 122.7, the figure of merit ( $$FOM)$$ = 49.5, and ideality factor $$(n)$$ = 7.33 with small series resistance ( $${R}_{s})$$ . The space-charge limited current (SLSC) and ohmic conduction are the transport mechanisms that govern these heterojunctions at a different voltage, affecting its performance. The influence of $$n$$ -Ge/ $$p$$ -Bi2Te3 junction on the performance of Metal/ $$n$$ -Ge/Bi2Te3 is analyzed. The experimental results are fitted by two-diode simulation and current density–voltage (J–V) and local ideality factor—voltage n–V plots of these heterojunctions are studied for the recombination current ( $${J}_{02})$$ . This study is significant in terms of the electrical performance of the Ge-TI-based, heterojunction devices.

Forming-free resistive switching in ferroelectric Bi 0.97 Y 0.03 Fe 0.95 Sc 0.05 O 3 film for RRAM application

Electromechanical and resistive switching properties were investigated in ferroelectric rhombohedral Bi 0.97 Y 0.03 Fe 0.95 Sc 0.05 O 3 (BYFSO) film, grown on fluorine-doped tin oxide coated glass substrate. Piezoforce microscopy images of the BYFSO film after the electrical writing indicates the ferroelectric domains were switched completely towards the upward and downward direction at ± 8 V DC bias voltage, which is analogous to the ferroelectric hysteresis curve. The resistive switching effect was investigated on the Ag/BYFSO/FTO RRAM device configuration through conventional I − V characteristics. The charge transport process in Ag/BYFSO/FTO resistive device is transformed from Ohmic to space charge limited current conduction mechanism. The endurance characteristics ensure a stable bipolar resistive switching effect with a large memory window of OFF/ON ratio about ∼100 for 50 repeatable testing cycles. From the impedance spectroscopy analysis, it is observed that the bulk resistance plays a significant role during the SET-RESET process, by large degradation of resistance from megaohm (high resistance state) to kiloohm (low resistance state). The oxygen vacancy induced conductive filaments are responsible for achieving the various resistive states in the device.

Bipolar resistive switching and non-volatile memory properties of MnO2-polyaniline (PANI) nanocomposite

Organic materials are becoming a promising candidate for non-volatile memory especially resistive switching memories. The present work reports bipolar resistive switching and memristive properties of polyaniline coated MnO2 nanocomposite. The hybrid nanocomposite was synthesized by oxidative polymerization of aniline in the presence of the MnO2 nanostructures. The XRD analysis confirms the α-MnO2 phase and the TEM micrograph reveals the formation of nanorods of the material. The results of Attenuated Total Reflection Infrared Spectroscopy (ATR-IR) and Thermogravimetric analysis (TGA) confirmed the presence of the polymer in the composite. The developed device shows bipolar resistive switching behavior with a memory window ~7 × 102, switches efficiently over 103 cycles, and can retain the data over 104 seconds. Space charge limited current conduction model along with the possible filamentary route of operation describes conduction and resistive switching mechanisms of the device.