Abstract
In this study, we demonstrate solution-processed memristor devices using a CdSe/ZnS colloidal quantum dot (CQD)/poly(methyl methacrylate) (PMMA) composite and their electrical characteristics were investigated. Particularly, to obtain stable memristive characteristics with a large current switching ratio, the concentration of CdSe/ZnS QDs in the PMMA matrix was optimized. It was found that with the CdSe/ZnS QD concentration of 1 wt%, the memristor device exhibited a high current switching ratio of ~104 and a retention time over 104 s, owing to the efficient charge trapping and de-trapping during the set and reset processes, respectively. In addition, we investigated the operational stability of the device by carrying out the cyclic endurance test and it was found that the memristor device showed stable switching behavior up to 400 cycles. Furthermore, by analyzing the conduction behavior of the memristor device, we have deduced the possible mechanisms for the degradation of the switching characteristics over long switching cycles. Specifically, it was observed that the dominant conduction mechanism changed from trap-free space charge-limited current conduction to trap charge-limited current conduction, indicating the creation of additional trap states during the repeated operation, disturbing the memristive operation.
Highlights
The electrical resistance state can be changed according to the history of the external stimulation, such as the voltage pulses, allowing the emulation of learning behavior and various neuromorphic functions
We demonstrate solution-processed memristor devices using a CdSe/ZnS
Characteristics, we show that the dominant charge conduction mechanism changed from trap-free space charge-limited current (SCLC) conduction to trap charge-limited current (TCLC) conduction, indicating the creation of additional trap states during the repeated operation, disturbing the memristive operation
Summary
Memristors have received significant interest for next-generation electronics such as neuromorphic computing systems, owing to their potential advantages such as high energy efficiency, good scalability, and compatibility with conventional complementary metal-oxide-semiconductor fabrication processes [1,2,3,4,5,6,7,8,9,10]. Organic/inorganic hybrid materials have received much attention recently due to their wide tunability in electrical properties, good mechanical flexibility, low-temperature process, and large-area scalability [15,16]. Since the organic/inorganic hybrids can be deposited by a simple solution process, the use of sophisticated vacuum deposition processes can be omitted, enabling the realization of cost-effective and area-scalable neuromorphic systems
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