Abstract
Electrical properties of V2O5/n-Si Schottky barrier diodes prepared by rf magnetron sputtering of vanadium pentoxide (V2O5) on n-Si wafer have been investigated. The current-voltage (I–V) and capacitance-voltage (C-V) measurements of the diode have been performed in the dark at the room temperature. The saturation current (I0), ideality factor (n), barrier height (ΦB) values of the diode have been determined as 6.68x10-8 A, 1.35, and 0.755 eV, respectively. The series resistance (RS) values from Norde, Cheung and Nicollian & Brews methods have been determined as 199 Ω, 251 Ω, and 144 Ω, respectively. The energy distribution of interface state density (NSS) was determined, and the values of against the energy values of NSS in the vary between EC-0.462 eV and EC-0.713 eV were obtained 4.343x1016 eV-1 cm-2 and 3.282x1015 eV-1 cm-2, respectively. The barrier height and metal oxide thickness (ẟ) values using capacitance-voltage (C-V) measurements in the frequency of 1 MHz has also been calculated as 0.949 eV and 37.4 nm, respectively. The prepared diode showed abnormal diode characteristics, indicating the existence of a space-charge limited (SCL) current. From forward bias I-V characteristics, the ohmic, trapped filled space charge limited current (TFSCLC) and SCLC conduction behaviors were observed at low, middle, and high voltages, respectively. Experimental results indicated that the prepared V2O5 film on n-Si can be utilized in electronic applications.
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