Space Charge Limited Conduction Research Articles

Influence of La3+ substitutions on structural, dielectric and electrical properties of spinel cobalt ferrite

La3+ doped cobalt ferrites with composition CoLaxFe2−xO4 (0.00 ≤ x ≤ 0.20) were synthesized by a co-precipitation method. X-ray diffraction (XRD) analysis confirm the formation of single-phased spinel structure for all synthesized samples. The result of La3+ doping on dielectric and electrical properties of cobalt ferrites was investigated. Dielectric constant and dielectric loss decrease with increasing frequency whereas alternating current (AC) electrical conductivity increases with increasing frequency. The AC electrical conductivities were effectively modeled by employing the Jonscher’s power law. Role of grain and grain boundary on impedance has been explored from nyquist plots and equivalent electrical circuits were proposed to clarify the impedance spectroscopy results. The Direct Current (DC) electrical resistivities were estimated by two probe method within the temperature range of 303K–700K. DC electrical resistivity decreases with increasing temperature and explained by hopping mechanism. DC electrical resistivity and drift mobility decreases with La3+ doping. Activation energies were calculated by employing the Arrhenius plot. Activation energy found to increases with La3+ substitutions. Maximum value of DC electrical resistivity achieved was 9.26 x 10+8 (Ω-cm) with crystallite size 17 nm. Current-Voltage (I–V) measurements were carried out within 0→6V→0V→ –6V→0V voltage range. It is worth mentioning that all doped sample exhibited remarkable and improved nonlinear hysteresis loop-type behavior than pour sample. Variation in resistance, in current-voltage loops, is clarified by considering space charge limited conduction (SCLC) model and oxygen vacancies migration across the metal-semiconductor interface. Out study suggest that La3+ doped cobalt ferrites may be tested as an active material for possible applications in non-volatile memory devices and neuromorphic applications.

Effect of variation in glancing angle deposition on resistive switching property of WO3 thin films for RRAM devices

In this paper, nanostructured tungsten oxide (WO3) thin films are deposited using the RF-magnetron sputtering technique in Glancing Angle (GLAD) arrangement. Variation in the structural, morphological, optical, and resistive switching (RS) characteristics of nanostructured WO3 film is investigated as a function of GLAD angle (60°–80°). Electrical studies on nanostructured WO3 films deposited at room temperature are found to exhibit enhanced bipolar resistive-switching properties in metal–insulator–metal pattern [Au/WO3/ITO]. The RON/ROFF ratio between high and low resistance states was noted to be about 190 besides a minimum set voltage of ∼2.22 V in the case of the WO3 thin film deposited at the 70° glancing angle. A detailed current transport mechanism analysis indicates the existence of ohmic-behavior and trap-assisted space charge limited conduction as the governing mechanisms at the state of low and high applied bias, respectively. Good data-retention characteristics coupled with reproducible and fast RS capabilities obtained with Au/WO3/ITO device structure promise scope of rapid development in future RS-based novel memory device applications.

Unravelling the role of oxygen vacancies on the current transport mechanisms in all-perovskite nickelate/titanate heterojunctions for nonvolatile memory applications

The micrometer-sized nickelate–titanate heterojunctions with LaNiO3 (LNO) electrode have been fabricated to investigate the dominant current transport mechanisms under positive and negative bias. The LNO/SmNiO3 (SNO)/Nb:SrTiO3 (NSTO) heterojunction exhibits a highly rectifying feature with a very low leakage in a broad temperature region (from 200 to 425 K), which is attributed to the formation of a Schottky-like barrier at the SNO/NSTO interface. In addition, it is found that the trap defects (i.e., oxygen vacancies) play an essential role in determining the current density (J)–voltage (V) characteristics irrespective of the voltage polarity. The leakage current at low electric fields (<0.25 MV/cm) is dominated by temperature-enhanced trap assisted tunneling process, which is caused by the interface oxygen vacancy induced states. Further analysis suggests that, at high fields (>1.2 MV/cm), the leakage is ascribed to the bulk-limited field enhanced thermal ionization of trapped carriers in the SNO film (i.e., Poole–Frenkel emission). Specially, the oxygen vacancy redistribution near the SNO/NSTO heterointerface driven by a high temperature (425 K) or high electrical field (>3.8 MV/cm) stress is emphasized to account for the transition from the Schottky contact limited to bulk-limited conduction mechanism (i.e., space charge limited conduction). This work will benefit the further analysis of the resistive switching phenomena in nickelate-based devices, showing a potential for nonvolatile memory applications.

Fully printed ZnO-based valency-change memories for flexible and transparent applications

Printable and flexible memory devices have attracted a great deal of attention in several emerging technological applications for the development of flexible electronics, such as interconnections/wearables/smart devices for the internet of things (IoT). In this work, we report on the fabrication of flexible, transparent, and fully inkjet-printed resistive random access memory (ReRAM) cells using poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/ZnO/PEDOT:PSS structures. The electrical characteristics were studied, including the determination of space charge limited conduction (SCLC) as the dominant charge transport mechanism. In addition, the bending performance and the transparency of the devices was tested in order to confirm the reliable operation and reproducibility of the cells. The switching for the printed structures of PEDOT:PSS/ZnO/PEDOT:PSS was led through the formation and dissolution of a stable oxygen vacancy filament, as confirmed by conductive atomic force microscopy. While the conduction mechanism for the high resistance state (HRS) was attributed to the SCLC mechanism. The switching of the memory cells, their endurance and retention properties were analysed and indicated the stability of the HRS and low resistance state for more than 104 cycles and 105 s comparable to ZnO-based ReRAM produced by clean-room techniques. The study of the mechanical flexibility of the cells shows that up to 700 bending cycles can be reached without significantly changing the switching characteristics.

Forming-Free Pt/Ti/AlOx/CeOx/Pt Multilayer Memristors with Multistate and Synaptic Characteristics

Due to their unique electrical performance and simple structure, memristors exhibit excellent application prospects for future information technology. In this work, we fabricated Pt/Ti/AlOx/CeOx/Pt memristors demonstrating electroforming-free bipolar resistive switching behavior with low operating voltage (−1 to 1 V), stable endurance, and retention. Space-charge limited conduction (SCLC) as well as the formation and rupture of conductive filaments are responsible for the resistive switching behavior. Increasing the magnitude of the RESET voltage could generate multistate resistive switching. We studied the synaptic characteristics of the device by obtaining multilevel conductance states and investigating the relationship between the device resistance, pulse amplitude, pulse width, and pulse number. By applying programmed pre and postsynaptic spiking pulses, spike-timing dependent plasticity was observed. This study shows that the device is suitable for multivalue storage and can be used as an electronic synapse device in artificial neural networks.

Enhanced resistive switching properties of HfAlOx/ZrO2- based RRAM devices

Resistive Random-Access Memory (RRAM) devices are recognized as potential candidates for next-generation memory devices, due to their smallest cell size, high write/erase speed, and endurance. Particularly, the resistive switching (RS) characteristics in oxide materials have offered new opportunities for developing CMOS-compatible high-density RRAM devices. In this study, the RS behavior of HfAlOx/ZrO2 thin films sandwiched structure between TiN bottom electrode and Au top electrodes were investigated. It was found that Au/HfAlOx/ZrO2/TiN stacks were superior in terms of RS performance when compare to Au/HfAlOx/TiN memory stacks. The devices demonstrated a good resistance ratio of high resistance state and low resistance state ∼103 for Au/HfAlOx/TiN and ∼105 for Au/HfAlOx/ZrO2/TiN stacks, respectively. Both stacks showed good retention characteristics (>104 ​s) and endurance (>103 cycles). The experimental current-voltage characteristics fitted with different conducting mechanisms, the linear lower bias region is dominated by ohmic conductivity, whereas the non-linear higher bias region was dominated by space-charge limited current conduction mechanism.

A review on electrical transport properties of thin film Schottky diode

The article outlines an inclusive list of thin film Schottky diodes (TFSD) references. The review audits the fabrication and characterization of the TF metal-semiconductor (MS) diode, a TFSD. The work functions of metal (ϕ m) and semiconducting material (ϕs ) determines whether the established MS contact is ohmic or rectifying. Current-voltage (I – V) and capacitance-voltage (C – V) characterizations are essential electrical transport measures of TFSDs. The I – V and C – V outcomes are conferred, and archetypal results are parroted. The TFSD device is emblematic of a heterojunction diode (HJD). The rectification ratio (RR), saturation current (I0), ideality factor (n), Schottky barrier height (ϕB), and carrier concentration may all be calculated using I – V and C – V data. Thermionic emission (TE) and/or space charge limited conduction mechanisms (SCLC) may conduct electricity in TFSDs. Anderson’s model can theoretically be used to construct a TFSD energy band diagram.

Photo-electrical Characterization of New CuAlNi/n-Si/Al Schottky Photodiode Fabricated by Coating Thin-Film Smart Material

Micro/nano scale thin-film shape memory alloys (SMAs) have been used in many different miniaturized systems. Using them as thin-film metal components in fabrication of Schottky photodiodes has started a few years ago. In this work, a new SMA-photodiode device with CuAlNi/n-Si/Al structure was produced by coating nano-thick CuAlNi SMA film onto n-Si wafer substrate via thermal evaporation. The photoelectrical I-V, C-V and I-t photodiode signalization tests were performed under dark and varied artifical light power intensities in room conditions. It was observed that the new device exhibited photoconductive, photovoltaic and capacitive behaviors. By using conventional I-V method, the diode parameters such as electrical ideality factor (n), Schottky barrier height (ϕb) and rectification ratio (RR) of the produced photodevice for the condition of dark environment were computed as 12.5, 0.599 eV and 1266, respectively. As good figure of merits, the photodiode’s performance parameters of responsivity (Rph), photosensivity (%PS) and spesific detectivity (D*) maxima values determined for at -5 V reverse voltage bias and under 100 mW/cm2 of light power intensity condition are as 0.030 A/W (or 30 mA/W), 18693 and 1.33×1010 Jones, respectively. The current conduction mechanism analysis revealed that the space charge limited conduction (SCLC) mechanism is the dominant current conduction mechanism. By the drawn reverse squared C-2-V plots, the values of diffusion potential (Vd), donor concentration (ND), Fermi level (EF) and also barrier height (ϕb) were determined for the SMA-photodiode. The results indicated that the new SMA-photodiode device can be useful in optoelectronic communication systems and photosensing applications.

Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO2/n++-Si RRAM Devices.

In this work, we investigate the effect of temperature on the electrical characteristics of Al/SiO2/n++-Si RRAM devices. We study the electroforming process and show that forming voltage and time-to-breakdown are well described by Weibull distribution. Experimental current–voltage characteristics of Al-SiO2-(n++Si) structures are presented and discussed at different temperatures. We show that some intermediate resistance states can be observed at higher temperatures. In our analysis, we identify Space Charge Limited Conduction (SCLC) as the dominating transport mechanism regardless of the operating temperature.

Study of carbon nanotube embedded honey as a resistive switching material

In this paper, natural organic honey embedded with carbon nanotubes (CNTs) was studied as a resistive switching material for biodegradable nonvolatile memory in emerging neuromorphic systems. CNTs were dispersed in a honey-water solution with the concentration of 0.2 wt% CNT and 30 wt% honey. The final honey-CNT-water mixture was spin-coated and dried into a thin film sandwiched in between Cu bottom electrode and Al top electrode to form a honey-CNT based resistive switching memory (RSM). Surface morphology, electrical characteristics and current conduction mechanism were investigated. The results show that although CNTs formed agglomerations in the dried honey-CNT film, both switching speed and the stability in SET and RESET process of honey-CNT RSM were improved. The mechanism of current conduction in CNT is governed by Ohm’s law in low-resistance state and the low-voltage range in high-resistance state, but transits to the space charge limited conduction at high voltages approaching the SET voltage.

Operation voltage and illumination intensity dependent space-charge limited current conductions in vertical organic phototransistors based on CuPc/C60 heterojunction and graphene

For a trap-free single layer single carrier (hole-only or electron-only) organic device of thickness d, dielectric constant εr, and mobility μ, the relation of current density j with voltage V is described by the well-known Mott–Gurney equation, j=9ε0εrμV2/8d3, which can be rewritten as j=GV, where G=9ε0εrμ/8d3 can be called space-charge limited (SCL) conductance. We investigated the current–voltage characteristics of vertical organic heterojunction phototransistors based on graphene as the source and C60/copper phthalocyanine (CuPc) heterojunction as the photoactive layer. We found that the drain current vs drain voltage (Id-Vd) characteristic is composed of two distinct SCL conductions with SCL-conductance being strongly dependent on the gate voltage and illumination intensity. At low gate voltages, the Id-Vd curve can be divided into two sections of SCL current conduction with different SCL-conductance: the lower conductance in the lower drain voltage range and the higher conductance in the higher drain voltage range. Both low and high SCL-conductance increase with the gate voltage and illumination intensity. However, as the gate voltage increases to a certain threshold, the two SCL sections unify to only one with the conductance being between them. Our findings implicate that the current conduction of an ideal vertical organic phototransistor (VOPT), whose source/organic interface contact is Ohmic and organic semiconductor is trap free, can be well modeled by the SCL conduction theory with carrier density dependent mobility, which is strongly related to the gate voltage and illumination intensity, and that the mobility of VOPTs at a certain gate voltage can be extracted by the Mott–Gurney equation.

Mixed tin-lead perovskite nanorod-based resistive memory device

• Perovskite nanorods synthesis by intercalation of long-chain organic cations. • Use of oleylammonium organic cation into bulk methylammonium tin-lead bromides as cations. • Poly(methyl methacrylate) encapsulated nanorods are excellent memristor active layer. SET voltage lowered to ∼ 0.5 V and ON OFF current ratios enhanced to ∼10 5 . Stable mixed cation (tin-lead) perovskite nanorods results from intercalating long-chain organic ligand- oleylamine into perovskite 3D (CH 3 NH 3 PbBr 3 ) structure using the ligand-assisted re-precipitation method. A spin-coated nanorod film works as an active layer for resistive memory devices by sandwiching nanorod film between two electrodes with a switching voltage of 1.4 V. A poly(methyl methacrylate) passivated nanorod film results in better resistive memory properties by exploiting advantages of both insulating poly(methyl methacrylate) and semiconducting perovskite nanorods. The passivation enhances the stability of the device, protecting electrodes from reacting with the perovskite layer. The structure lowers the current in the high resistance state, increasing the ON OFF current ratio to ∼ 10 5 . The device exhibits non-volatile rewritable resistive switching characteristics with a switching voltage ∼ 0.5 V. The conduction mechanism involved in the switching action is explained from the relation between current-voltage as space charge limited conduction.

Correlation between the composition, phase, band structure, ferroelectric and leakage responses of Bi1-Ba Fe1- TiyO3 thin films

• Synthesis optimization to achieve correct phase. • Substitution reduces Bi 3+ volatilization, stabilizes structural phase and leakage. • Resistive and dielectric characteristics identified in Polarization hysteresis. • Mechanisms of leakage current have been identified and discussed. • Schematic band diagram with and without substituent have been constructed. Despite significant attention given to multiferroics, they are still far from being used in practical applications. This is because high electrical leakage current limited their use on a commercial scale. The current work demonstrates the effect of substitution in reducing leakage current and improving the electrical properties of BiFeO 3 films. Chemical solution deposition method is used to prepare substituted and co-substituted thin-films of BiFeO 3 on fluorine doped tin oxide glass substrate. Detailed structural analysis of synthesis optimization has been characterized, including X-ray diffraction and Raman analysis. Polarization hysteresis loops exhibit resistive characteristics, indicating leakage behavior. Specifically, high leakage current is observed in BiFeO 3 thin film. Detailed analysis revealed the presence of ohmic and space charge limited conduction mechanisms. Substitution of Ba 2+ for Bi 3+ reduces Bi 3+ volatilization and suppresses the leakage current. The co-substitution of Ba 2+ and Ti 4+ is observed to be effective in reducing leakage characteristics in films.

Polyvinylidene fluoride‐natural graphite flexible composite films: Formation of graphite nanosheets, electroactive phase, analysis of electrical and thermal properties

AbstractSolution blending technique has been employed to synthesize polyvinylidene fluoride (PVDF)‐natural graphite composite films. The surface tension of the solvent has been observed to play an important role in the reduction of graphite particle size and their dispersion in the polymer matrix as N‐N‐dimethylacetamide (DMAc) employed PVDF‐x wt% natural graphite (x = 3, 5) films exhibit higher conductivity than that of N‐N‐dimethylformamide (DMF) employed films of same composition. The dispersion of probe sonicated graphite particles in PVDF matrix has been observed to be better when DMAc solvent is used in comparison to DMF employed composite as revealed by optical microscope images. The electrical percolation threshold in PVDF‐natural graphite composites is identified below 0.5 wt% natural graphite due to remarkable reduction in the particle size of graphite which improved the network formation between them. FESEM analysis confirms the formation of graphite nanosheets. The coexistence of non‐polar α and electroactive γ phases of PVDF in the composites is confirmed by FTIR, XRD, and DSC analyses. Maximum fraction of γ phase, as calculated from FTIR, is 88% in PVDF‐3 wt% natural graphite composite. Thermal annealing of PVDF‐3 wt% natural graphite at 120°C for 5 h results in enhanced electroactive γ phase in the nanocomposite. The onset degradation temperature of PVDF is increased by 4°C in PVDF‐5 wt% natural graphite suggesting enhanced thermal stability of the composite. Room temperature I–V characteristics of PVDF‐x wt% natural graphite (x = 5, 7) composite supports space charge limited conduction to be the dominant mechanism of charge transport.

Effect of annealing temperature on the physical properties of NiO thin films and ITO/NiO/Al Schottky diodes

Herein, fabrication and characterisation of p-NiO/Al Schottky barrier diodes have been realised by dc reactive magnetron sputtering. In addition, effect of post-annealing temperature was studied. A detailed investigation on the physical properties of the NiO thin films was carried out using structural, morphological, optical, and spectroscopic characterisation tools. The metal–semiconductor interface behaviour has been analysed by current–voltage characterisation by implementing the Thermionic emission and Chueng model. The fabricated diode rectification ratio of 103 has been recorded at pm 3V, and barrier height varied from 0.53 to 1.10 eV as a function of annealed treatment. A space charge-limited conduction mechanism and tunnelling through the interface trap density of p-NiO/Al Schottky diodes were explained by power law characteristics. Furthermore, we have evaluated the Schottky device's electrical characteristics through the ac measurements which include capacitance densities, dielectric constants, tangent loss, AC conductivity, and Nyquist plots. The present work could provide a better understanding and insight into the p-NiO/Al Schottky junction.

A Wide Bandgap Semiconducting Magnesium Hydrogel: Moisture Harvest, Iodine Sequestration, and Resistive Switching.

Water harvesting from the ubiquitous moisture is pivotal for delivering fresh water to earth's arid/semiarid regions, and sequestration of iodine from the solution is crucial for environmental safety due to its severe effect on human metabolic processes. In this context, herein, a multifunctional supramolecular metallohydrogel (Mg@TAEA) is synthesized through direct mixing of magnesium nitrate hexahydrate and the low molecular weight gelator tris(2-aminoethyl)amine. Electron microscopy reveals that Mg@TAEA is sculptured in vertically grown well-oriented micrometer-sized flakes. The porous crystalline material (52 m2/g) was found to be an efficacious host matrix for water harvesting from moisture (847 mg/g). Mg@TAEA shows effective (513 mg/g) iodine sequestration from solution and adsorption of carbon dioxide (15 mg/g). The wide bandgap semiconducting Mg@TAEA (3.6 eV) material is a potential candidate for building memory devices, and the Ion/Ioff ratio of the device based on the indium tin oxide (ITO)/Mg@TAEA/Ag heterostructure was found to be ∼62. We further extended our work by analyzing the charge transport properties of the system and found space charge limited conduction (SCLC) and trap-filled SCLC to be responsible for the nonlinear transport behavior observed in the device.

Dielectric properties and impedance spectroscopy of NASICON type Na3Zr2Si2PO12

We report the temperature dependent dielectric properties and impedance spectroscopy investigation of Na3Zr2Si2PO12 in the frequency range of 20 Hz–2 MHz. The Rietveld refinement of x-ray diffraction pattern confirms the monoclinic phase with C2/c space group. The d.c. resistivity behavior shows its strong insulating nature at low temperatures, and follows Arrhenius law of thermal conduction with an activation energy of 0.68 eV. Moreover, detailed analysis of temperature dependent I–V data shows a transition from ohmic to space charge limited conduction (SCLC) mechanism at around 5 V applied electric field. The decrease in electric permittivity (εr) with frequency is explained based on the space polarization mechanism and its increment with temperature by thermal activation of charge carriers. The dielectric loss (D = tanδ) peak follows the Arrhenius law of thermal activation with an energy of 0.25 eV. We observe an enhancement in a.c. conductivity with frequency and temperature due to the decrease in the activation energy, which results in enhancing the conduction between defect states. Further, we observe an abrupt increase in the a.c. conductivity at high frequencies, which is explained using the universal Jonschers power law. The analysis of a.c. conductivity shows two types of conduction mechanisms namely correlated barrier hopping and non-overlapping small polaron tunnelling in the measured temperature range. The imaginary part of the electric modulus confirms the non-Debye type relaxation in the sample. The shifting of the relaxation peak towards higher frequency side with an increase in temperature ensures its thermally activated nature. The scaling behavior of the electric modulus shows similar type of relaxation over the measured temperature range. The combined analysis of electric modulus and impedance with frequency shows the short-range mobility of charge carriers.

Natural biomaterial-based memristor bearing protonated polydopamine with enhanced bipolar resistive switching performance and environmental robustness

The searching for green memristor with good environmental robustness will be significant for next generation biodegradable devices. In this work, bio-compatible and non-toxic polydopamine (PDA) was prepared by self-polymerization of dopamine in simple aqueous solution, which was protonated by different acid concentrations (3–12 M HCl) and further fabricated as memory devices with structures of FTO/PDA/Ag. The ON/OFF ratio are enhanced gradually from 2.80 × 102 (PDA-3 M), 8.39 × 102 (PDA-6 M), 5.18 × 103 (PDA-9 M) to 2.41 × 104 (PDA-12 M). The lower conjugated degree, the closer lattice packing and the less radicals after acid treatment are the reasons for the enhanced bipolar resistive switching performances of protonated PDA-based memristor. The resistive switching mechanism is the conductive filament with three processes of Ohm, space charge limited conduction (SCLC) and trap-filled limited (TFL). In addition, the FTO/PDA-12 M/Ag exhibit good environmental robustness, including thermal (100 °C) and ionizing irradiation (UV exposure for 96 h). In all, the facial protonation treatment and the simple sandwich device structures together with good environmental robustness endow its promising applications in as green, stable and biodegradable next generation electron devices.

Thermal Enhanced Resistive Switching Performance of <100>‐oriented Perovskite [(TZ‐H)2(PbBr4)]n with High Working Temperature: a Triazolium/(PbBr4)n2n– Interfacial Interaction Insight

AbstractDespite the great progress has been made on device parameters and working mechanism of perovskite‐based memristors, thermal instability under extreme conditions limits their performance, and thermal effect on their resistive switching (RS) characteristics remains unclear. Herein, from the viewpoint of organic/inorganic interfacial interaction in a novel 2D <100>‐oriented perovskite [(TZ‐H)2(PbBr4)]n (TZ = 1H‐1,2,4‐triazole), thermal effect on the RS performance of perovskite‐based memristor is investigated. This FTO/[(TZ‐H)2(PbBr4)]n/Ag memristor can exhibit high thermal tolerance with a working temperature of 170 °C, and the best RS characteristics can be achieved at 140 °C. Mechanistic studies are executed based on X‐ray single structural analysis, powder X‐ray diffraction, UV–Vis, and fluorescence. Before the occurrence of phase change below 140 °C (α‐phase), anisotropic lattice expansion illustrated by the weaker inter‐layer NH···Br hydrogen bond, longer layer–layer distances, more distorted PbBr6 octrahedra, larger optical gap, and quenched fluorescence can be beneficial for the trap‐filled limited process. After phase transformation into β‐phase, the breakage of layer–layer interaction and looser layer–layer packing will inhibit the halogen migration, resulting in more space charge limited conduction characters. The unique thermal enhanced RS performance with status monitored by fluorescent chromism can provide a new paradigm for the development of new memristors with highly environmental tolerance.

Multifunctionality in ferromagnetic shape memory alloy-based resistive switching memory for flexible ReRAM application

Multifunctional flexible electronics is the ongoing demand for fabricating wearable data storage and communication devices. The magnetoelectric (ME) heterostructure consisting of piezoelectric (AlN) and ferromagnetic magnetic shape memory alloy [FSMA (Ni–Mn–In)] was fabricated over stainless steel (SS) substrate for resistive random access memory application. The Cu/AlN/FSMA/SS metal–insulator–metal based memory cell displays bipolar resistive switching (RS) behavior. The formation of Cu metallic filament at a particular SET voltage leads the memory cell in a low resistance state (LRS) from its pristine high resistance state (HRS). The LRS and HRS are explained well by Ohmic and space charge limited conduction mechanisms, respectively. The fabricated memory cell displays excellent endurance and data retention capability with a high OFF/ON ratio of ∼1.2 × 103. Furthermore, the multifunctionality of the ME heterostructure-based RAM was investigated by tuning the SET voltage with ambiance temperature and external magnetic field remotely. A significant change in the SET voltage could be ascribed to the temperature and magnetic field-induced strain transferred to the AlN piezoelectric layer from the magnetostrictive FSMA (Ni–Mn–In) bottom electrode. The residual Lorentz force explains the remotely tuned LRS and HRS in the transverse magnetic field for multi-bit data storage applications. Moreover, the RS characteristics remain stable even after 800 bending cycles as well as with bending angle (0°–180°). Hence, the present ME heterostructure integrated with flexible SS substrate can be a better choice for highly flexible, low-cost, and multifunctional futuristic RAM applications.