The wide variety and ever-growing applications of plasma processes in research and industry require an equally growing diversity and accessibility of suitable plasma diagnostics. The plasma parameters and the tailoring thereof strongly influence the outcome of thin film deposition, plasma etching, or surface treatments, to name only a few. To further enhance the determination of different fluxes of species, their energies, and behaviour influencing a surface process, a custom-built combination of two commonly used diagnostics was developed. With a retarding field energy analyzer, one can obtain the ion energy distribution in a plasma by measuring the current at the collector depending on the applied voltage at the scan grid. A passive thermal probe determines the energy flux density coming from a process plasma by measuring the temperature change of a dummy substrate. In this study, we present a retarding field energy analyzer where a passive thermal probe substitutes the collector. By doing so, we can determine the energy distribution of the charged ions, their energy flux density at a certain potential, and the power deposited onto a substrate. Another advantage is that the thermal probe can even measure the power deposited by incoming (fast) neutrals and of the background gas when the grids keep away the ions. Hence, combining these two powerful diagnostics yields information neither can deliver on their own. The probe has been tested in three different plasma environments: ion beam source, magnetron sputtering and radio frequency discharge plasma.
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