It was demonstrated firstly that the relative higher etch rate of titanium silicide relative to silicon oxide in HF-based solution was ascribed to the interaction of the positively-charged hydrogen with titanium, which has very low electron affinity relative to other metal. Based on the electron transfer mechanism of TiSix dissolution, we have developed the highly-selective novel etching material (T-Block) which is mainly composed of fluoride salt and low dielectric-constant solvent. In order for this novel solution to be applicable in the real fabrication process, we devised the novel iterative treatment process, suitable for single wafer spin equipment. In contrast to normal solution-treated group, any kind of failure regarding TiSix dissolution for T-Block-treated group was not found even when TiSix underlying direct contact was disclosed to T-Block in eBC process. Therefore, if T-Block is applied in fabrication process with 6F2 cell design, the significant enhancement of productivity through process simplification as well as yield will be expected.
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