In this paper, a tunable electromagnetically induced transparency (EIT) based on S-PINs is theoretically analyzed. Unit cell of the structure consists of a cutwire (CW), split ring resonator (SRR), and solid state plasma (SS plasma) patches which are composed of S-PIN array. The destructive interference between the CW and SRR results in a narrowband transparency window accompanied with strong phase dispersion. The proposed design can obtain a tunable EIT with different frequencies range from 12.8 GHz to 16.5 GHz in a simple method by switching these S-PINs on or off selectively. The related parameters of the S-PIN such as the size, carrier concentration, and volt-ampere characteristics have been studied theoretically. The interaction and coupling between two resonators are investigated in detail by the analysis of the current distribution and E-field strength as well. The research results provide an effective way to realize reconfigurable compact slow-light devices.
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