Abstract
We have developed transducers capable of modulating the plasma density and plasma density gradients in indium antimonide. These transducers make use of piezoelectric drivers to excite acoustic pressure resonance at 3λ/2, generating large amplitude standing waves and plasma density modulations. The plasma density has been directly measured using a laser diagnostic. A layered media model shows good agreement with the experimental measurements.
Highlights
There are a small number of materials, such as indium antimonide, that have very high electron mobility and can support a solid-state plasma
We have developed transducers capable of modulating the plasma density and plasma density gradients in indium antimonide
The plasma density modulation induced by the acoustic pressure is measured in the InSb using a laser diagnostic
Summary
There are a small number of materials, such as indium antimonide, that have very high electron mobility and can support a solid-state plasma. Carbon materials with this property should be available in the future. With these materials, it may be possible to develop practical plasma based sensors to measure spatial variation in properties that affect the energy band gap, such as a pressure gradient sensor.. The energy band gap of semiconductors is known to have hydrostatic pressure dependence.. (1) and (3) and the constants for InSb at room temperature (T = 300 K) gives the plasma density as a function of hydrostatic pressure ni ≃ 2.05 × 1022(1 − 2.65 × 10−9Ph) (m−3). Ph for the same volume change, where Pu is the uniaxial pressure
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