Manganese gallium alloy with DO22-type chemical ordering (DO22-Mn3Ga) thin film represents an intriguing candidate for fabricating the fundamental composition of magnetic devices. In this paper, we prepare the Fe/DO22-Mn3Ga composite films on thermal MgO (100) substrates with different annealing temperatures and report the interfacial exchange coupling between Fe and DO22-Mn3Ga bilayers. Fe layer thickness and annealing temperature are predominant in regulating the nature and strength of interfacial exchange coupling. It is found that there is a ferromagnetic coupling between Fe and DO22-Mn3Ga layers. Their exchange coupling strength can be regulated by changing the Fe soft magnetic layer thickness in a reasonable range. Additionally, the interface diffusion generated from heat treatment induces to change of the nature of exchange coupling. It is possible that Fe replaces Mn site in the DO22-Mn3Ga unit cell due to smaller atomic radius and higher electronegativity compared with Mn. Antiferromagnetic coupling from annealed Fe/DO22-Mn3Ga film with high perpendicular magnetic anisotropy is technologically important to research synthetic antiferromagnetic structure for spin-transfer-torque magnetoresistive random access memory. Our works is helpful for the exploration of interfacial science and development of magnetic devices.
Read full abstract