SnO2 Films Research Articles

Modification of High-Surface-Area Carbons Using Self-Limited Atomic Layer Deposition

This study explores the application of Atomic Layer Deposition (ALD) to functionalize high-surface-area carbon supports with metal and metal oxide films and particles for applications in catalysis and electrocatalysis. The work reported here demonstrates that, through careful choice of precursors and absorption and reaction conditions, self-limited ALD growth on a high-surface-area carbon support can be achieved. Specific examples presented include the growth of conformal films of ZrO2 and SnO2 and the deposition of Ga2O3 and Pt particles on a carbon black support with a surface area of 250 m2·g−1. A novel strategy for controlling the Pt weight loading and producing sub-nanometer Pt particles on a carbon support using a single ALD cycle is also presented.

Modifying the buried interface by a sulfamate enable efficient perovskite solar cells with high stability

The buried interface between the pivotal perovskite layer and the electron transfer layer (ETL) greatly affects the photoelectric property of perovskite layer and the final performance of a perovskite solar cell (PSC). Effectively modifying the buried interface is feasible to improve the photoelectric conversion efficiency (PCE) and stability of PSCs. Herein, we employ a sulfamate sodium 4-aminoazobenzene-4′-sulfonate (SABS) with zwitterion to modify the SnO2 film surface to improve the performance of PSCs. The post-treatment makes the surface of SnO2 film smoother and also passivate the anion and cation vacancies of SnO2, which are benefit to the growth of perovskite crystals and strengthen the interface contact between SnO2 layer and perovskite layer. Furthermore, SABS molecules can passivate defects of perovskite layer at the buried interface. By using this post-treating method, the PCE of the final PSC is increased from 21.76 % to 23.86 %, and the storage and operational stability are also significantly improved. This promotion the buried interface via post-treating the SnO2 film with a zwitterion passivator provides a convenient strategy to effectively improve the performance and stability of PSCs.

Structure and Properties of Thin Films Prepared on Flexible Substrates from SnCl4-Derived Solutions

Thin transparent films of SnO2 were obtained from aqueous–alcohol solutions of SnCl4 on a flexible polyethylene terephthalate (PET) substrate by spray pyrolysis at 100 °C. The influence of the addition of aqueous ammonia to the film-forming solution on the different properties has been studied. Properties studied include surface morphology, phase composition and transparency of the formed films and the crystallization processes and band gap of the film material. It was found that the addition of aqueous ammonia causes the formation of skeletal crystals (NH4)2[SnCl6] with a perovskite structure in the film structure. The resulting films are promising for use in the technology of manufacturing flexible solar cells.

Charge Carrier Dynamics of SnO2 Electron‐Transporting Layers in Perovskite Solar Cells

Perovskite solar cells (PSCs) have demonstrated remarkable increase in their photovoltaic efficiencies over the past several years. Charge carrier properties including charge selectivity, extraction, and transport play key roles in device performances. Therefore, a comprehensive insight into the charge carrier dynamics and mobility within the bulk materials and at the interface is of great importance for the future development of this cutting‐edge technology. This review discusses the recent advances that have been made in SnO2 electron‐transporting layers and their limitations, followed by outlining the key development of novel strategies in improving SnO2 films through surface defect engineering, interface modification, and doping approaches. In addition, the recent developments are highlighted for identifying the origin of defect and trap center, and promoting SnO2 electron extraction and transporting capacity in PSCs. Importantly, the novel approaches are also discussed for studying photogenerated charge carrier dynamics of the devices. In conclusion, the own prospectives and outlooks are presented for the development of SnO2‐based PSCs, with a particular focus on addressing current difficulties in SnO2 and providing in‐depth understanding on the relationships between materials and devices.

Facile Synthesis, Sintering, and Optical Properties of Single-Nanometer-Scale SnO2 Particles with a Pyrrolidone Derivative for Photovoltaic Applications

We investigate the preparation of mesoscopic SnO2 nanoparticulate films using a Sn(IV) hydrate salt combined with a liquid pyrrolidone derivative to form a homogeneous precursor mixture for functional SnO2 nanomaterials. We demonstrate that N-methyl-2-pyrrolidone (NMP) plays a crucial role in forming uniform SnO2 films by both stabilizing the hydrolysis products of Sn(IV) sources and acting as a base liquid during nanoparticle growth. The hydrolysis of Sn(IV) was controlled by adjusting the reaction temperature to as low as 110 °C for 48 h. High-resolution TEM analysis revealed that highly crystalline SnO2 nanoparticles, approximately 3–5 nm in size, were formed. The SnO2 nanoparticles were deposited onto F-doped SnO2 glass and converted into dense particle films through heat treatments at 400 °C and 500 °C. This pyrrolidone-based nanoparticle synthesis enabled the production of not only crystallized SnO2 but also transparent and uniform films, most importantly by controlling the slow hydrolysis of Sn(IV) and polycondensation only with those two chemicals. These findings offer valuable insights for developing stable and uniform electron transport layers of SnO2 in mesoscopic solar cells, such as perovskite solar cells.

Bicontinuous nickel/tin oxide films with enhanced photoelectrochemical hydrogen production efficiency

Self-assembled bicontinuous NiO:SnO2 films are proposed for enhanced photoelectrochemical hydrogen production efficiency due to their high interface-to-volume ratio and three-dimensional interconnectivity. The X-ray diffraction confirms the superior crystallinity of the bicontinuous NiO:SnO2 films. Bicontinuous NiO:SnO2 films reveal a heterostructure of mixed NiO and SnO2 phases, where the NiO phase exhibits the distribution of small grains, whereas the SnO2 phase exhibits large agglomerates of SnO2 crystals embedded in the NiO structure. The bicontinuous NiO:SnO2 films exhibit lower bandgap energy and higher electrical conductivity compared to pure NiO and pure SnO2 films. The photoresponsivity of the bicontinuous oxide films is higher than pure NiO and pure SnO2 films. These results imply the presence of strong charge interactions at the three-dimensional interfaces in bicontinuous NiO:SnO2 films. The hydrogen revolution reaction analysis confirms that the bicontinuous NiO:SnO2 films exhibit higher photoelectrocatalyst hydrogen production activity compared to pure NiO and pure SnO2 films.

Preparation of the scattering layer based on SnO2 nanocrystals for dye sensitized solar cell application

Abstract In this work, SnO2 paste was prepared based on (0.1 and 0.12 g) of SnO2 nanoparticles. The SnO2 film was deposited using Screen printing and doctor blade techniques, which it employed as scattering layer in Dye-Sensitized Solar Cell (DSSC). The crystal structure, morphology, and thermal stability of the paste were investigated using XRD, FE-SEM, and TGA techniques. The DSSC parameters were achieved to examining the effect of scattering layer on performance of DSSC. The results showed a crystalline structure predominantly composed of rutile SnO2 crystals arranged in a tetragonal pattern, with individual crystallites measuring approximately 100 nanometers in size. SEM images depicted the surface of SnO2 resembling a sponge with fine pores facilitating dye adsorption and electron mobility. Moreover, a decrease in average particle size was observed with increasing dye concentration, with the average grain size of SnO2 particles being below 100 nanometers at lower dye concentrations. TGA measurements indicated a phase transition occurring around 400 °C.

Facile assembly of SnO2 thin film-based Al/SnO2/Al device for sensing of 260 nm UVC and 365 nm UVA radiation

An Al/SnO2/Al metal-semiconductor-metal (MSM) device was formed by depositing a ~55nm thin film of SnO2 on Si substrate. Structural, surface morphology and optical properties of the SnO2 film were studied. The current-voltage (I-V) characteristics of the device were recorded under the dark condition followed by 260 nm-UVC and 365 nm-UVA illumination conditions. Under the dark condition, the device shows a resistivity of 8.05 Ωcm at V=1.5V bias voltage. The device produces nearly symmetric rectifying-type I-V characteristics under forward and reverse bias conditions. The electrical properties of the device were explained using back-to-back Schottky diode model. Under the dark condition, the ideality factor of the junction under forward and reverse bias were estimated to be 1.08 and 1.72 respectively. The external quantum efficiency of the device under UVC was found to be ~518.72% and specific detectivity reached as high as 1.03×109 Jones at 2.0V with a response time of ~1s. The device showed a high signal-to-noise ratio between 0.5 and 1.5V bias voltages. The values of the ideality factor being greater than 1 was attributed to the presence of point defects in the SnO2 layer as verified by photoluminescence study. This study reveals that the device could be used as a UVC and UVA sensor at a relatively low bias voltage of ~1.5V.

Aromatic carboxyl acid regulated nanoparticle deposition and passivation of tin oxide for high performance perovskite solar cells

The composition and nano particle agglomeration of hydrolyzed species in chemical bath deposition (CBD) plays a key role in obtaining efficient SnO2 film for high performance perovskite solar cells (PSCs). In this work, the aromatic acids with varied carboxyl groups were investigated to regulate the nano particle deposition and passivate the buried SnO2/perovskite interface. The quasi in-situ dynamic light scattering and Zeta potential results indicated that the nano particle agglomeration with trimesic acid (TMA) was significantly refined throughout the whole deposition process. The TMA-SnO2 achieved an ideal energy band alignment with perovskite and released the internal residual strain, promoting the growth and crystallization of the perovskite film due to the corrdination of carboxyl groups. As a result, the interface defects were effectively passivated with enhanced efficiency and stability. The small area device based on TMA-SnO2 obtained an efficiency of 25.07 %. The devices with an enlarged area of 1.4 cm2 and the 5x5 cm2 mini-module (active area 10.054 cm2) showed impressive PCEs of 23.93 % and 22.40 %, respectively. Furthermore, the unencapsulated devices exhibit enhanced long-term stability, maintaining 80 % and 90 % of the initial efficiencies under 80 ± 5°C thermal annealing in nitrogen for 1176 h and in air condition for 3224 h, respectively.

Optical and electric properties of tin oxide (SnO2) with reduced graphene oxide nanocomposite thin films

Due to their superior properties, two-dimensional (2D) nanomaterial materials have become increasingly popular for enhancing SnO2 thin films. In the paper, a thermionic vacuum arc (TVA) deposition system was used to produce a thin film of SnO2 with a reduced graphene oxide (rGO) nanocomposite. SnO2 thin films have become widely used in sensor applications, and these sensors have been shown to work at relatively high temperatures compared to room-temperature semiconductors. As a result, working temperatures affect the material properties. The surface properties of the deposited and post-annealed samples were investigated using field emission scanning electron microscopy integrated with energy dispersive x-ray spectroscopy and atomic force microscopy. The weight ratios of carbon and tin were calculated as 35 % and 65 %, respectively. The mean Z-height of the nanoparticles was determined to be 9 nm, and the distribution of the surface grains is nearly homogeneous. Following the post-annealing process, the thin film's band gap energy decreased from 3.78 eV to 3.25 eV. According to the photoluminescence spectra, emission peaks at 393 nm, 406 nm, and 443 nm were measured. The transmittance spectra of the various post-annealed samples at 150 °C were recorded, and they remained nearly the same. This consistency is a beneficial property of the thin film because SnO2:rGO nanocomposite thin films are designed to operate at relatively high temperatures. The present study investigates the advantages and properties of the post-annealed (repeating annealing) SnO2: rGO thin film.

Improved electrical contact properties in Indium-free silicon heterojunction solar cells with amorphous SnO2 TCO layers

Silicon heterojunction (SHJ) solar cells are recognized as one of the most efficient architectures in silicon-based photovoltaic devices. However, the reliance on indium (In)-based transparent conductive oxides (TCO) is anticipated to constrain their production capacity due to the critical and economically volatile nature of In. Recently, low-temperature-grown amorphous SnO2 (a-SnO2) films have been explored as an earth-abundant alternative TCO material. In this study, we examine the electrical contact properties of a-SnO2 layers employed as TCO layers in SHJ cells, focusing on their interaction with the underlying carrier selective contact layers. Our findings indicate that a stack of doped amorphous silicon (a-Si:H) and a-SnO2 exhibits relatively high specific contact resistivity, leading to a significant reduction in the device's fill factor. To address this issue, we propose two approaches: the insertion of a thin ZnO-based TCO layer between a-Si:H and a-SnO2, and the use of nanocrystalline silicon layers in place of a-Si:H. Both approaches effectively reduce the contact resistivity, resulting in improvements in fill factor and conversion efficiency comparable to those of benchmark device with In-based TCOs. Based on these findings, we demonstrate a high-efficiency, In-free, SnO2-based SHJ cell.

Is the oxygen plasma cleaning technique indicated for any electrochemical purpose?: The case of FTO electrodes

Fluorine-doped tin oxide (FTO) is among the most used transparent conductive oxides (TCOs) in phototovoltaic devices such as photoelectrochemical and solar cells. Preparation of films on these TCOs can be achieved by several deposition techniques including electrodeposition. Among the several cleaning and activation procedures before a thin film deposition there is the oxygen plasma treatment, which has been successfully applied on several kind of substrate materials. Surprisingly, the use of this step on TCOs previously to the electrodeposition of a film is not a usual practice. Here we present a detailed study on the consequences of oxygen plasma process over FTO electrodes that are subsequently employed in several electrochemical reactions of practical importance. Open circuit potential (OCP) measurements from oxygen plasma treated FTO have proven the resorption of ions and/or solvent molecules in aqueous electrolyte following a pseudo-second order kinetic. Electrochemical reactions were quite sensible to the oxygen plasma treatment, even under mild conditions. In all cases FTO become deactivated for such electrochemical processes independently of the plasma set up employed except for metal electrodeposition. Partial recovering of the electrochemical response of FTO in the ferri/ferro system after annealing at 450 °C explains why oxygen plasma process is worthy only for other deposition techniques such as spray pyrolysis where similar temperatures are employed. Electrochemical Impedance Spectroscopy (EIS) analysis revealed a decrease of the majority carrier density (ND). This is mainly attributed to the oxyanion implantation on oxygen vacancies sites during the plasma process thus explaining the loss of activation of FTO. Energy level diagrams reveal the decrease of degeneracy of FTO towards an n-type semiconducting SnO2 film which is also supported by ultraviolet photoelectron spectroscopy (UPS). A band gap energy dependence with the plasma conditions allowed to check the filling of oxygen vacancies on the FTO surface without discard the loss of fluorine. Anodic polarization in acid media proved the impossibility of oxygen vacancies restitution, being the dominating process the partial etching of FTO.

Hybrid Aromatic Fluoro Amine‐Modified SnO2 Electron Transport Layers in Perovskite Solar Cells for Enhanced Efficiency and Stability

SnO2 is a widely used electron‐transporting layer (ETL) in perovskite solar cells. Despite the high compatibility with the perovskite absorber layers, the presence of traps at the perovskite|SnO2 interface results in performance losses; hence, their modification to improve the performance and stability of perovskite solar cells (PSCs) is therefore important. Herein, the SnO2 ETL is enhanced by incorporating a bifunctional aromatic amino fluorine molecule into the SnO2 precursor solution. The fluorine molecule is found to partially substitute the Sn and alter the energy levels while the aniline group aids in regulating the nucleation/growth rate of the perovskite crystalline films. Herein, a hole transporting material‐free carbon‐based PSCs (CPSCs) is fabricated. It is found that perovskite absorber layers deposited on these modified SnO2 hybrid layers have higher optoelectronic quality, resulting in enhanced photovoltaic performance, device stability, and reduced hysteresis in CPSCs. Devices made with the modified hybrid SnO2 layers exhibit power conversion efficiencies of 15.6% significantly better than unmodified SnO2 with 13.5%. CPSCs with these modified SnO2 films also exhibit remarkable retention of 88.7% of their initial PCE for a shelf‐life period (ISOS‐D1I) exceeding 1200 h.

Synthesis and characterization of nanocrystalline SnO2 film by sol-gel assisted screen-printing route

Synthesis and characterization of nanocrystalline SnO2 film by sol-gel assisted screen-printing route

Enhancing the Performance of Nanocrystalline SnO2 for Solar Cells through Photonic Curing Using Impedance Spectroscopy Analysis.

Wide-bandgap tin oxide (SnO2) thin-films are frequently used as an electron-transporting layers in perovskite solar cells due to their superior thermal and environmental stabilities. However, its crystallization by conventional thermal methods typically requires high temperatures and long periods of time. These post-processing conditions severely limit the choice of substrates and reduce the large-scale manufacturing capabilities. This work describes the intense-pulsed-light-induced crystallization of SnO2 thin-films using only 500 μs of exposure time. The thin-films' properties are investigated using both impedance spectroscopy and photoconductivity characteristic measurements. A Nyquist plot analysis establishes that the process parameters have a significant impact on the electronic and ionic behaviors of the SnO2 films. Most importantly, we demonstrate that light-induced crystallization yields improved topography and excellent electrical properties through enhanced charge transfer, improved interfacial morphology, and better ohmic contact compared to thermally annealed (TA) SnO2 films.

Enhancing charge extraction in BiVO4 photoanodes by ZrCl4 treatment of SnO2 hole-blocking layers

In the search for more efficient and sustainable photoelectrochemical devices, BiVO4 is nowadays one of the best-performing photoanode material, with favourable band structure for water oxidation. However, BiVO4 photoanodes face challenges such as poor charge transport and slow kinetics. To address these issues, SnO2 films are commonly used as hole blocking layers, reducing recombination rate and enhancing charge lifespan and overall productivity. Yet, this method encounters problems like high defect concentrations at the SnO2/BiVO4 interface and pinholes in the SnO2 layer, which lead to charge recombination. In this study, we explore a ZrCl4 treatment to improve the effectiveness of SnO2 as a hole-blocking layer in BiVO4 photoanodes. Our findings, supported by detailed optoelectronic characterization and continuous and modulated electrochemical analysis, reveal that ZrCl4 treatment significantly enhances the hole-blocking properties of SnO2. This treatment results in a 37 % increase in photocurrent density at 1.23 VRHE and a 40 mV shift in the onset voltage, demonstrating a substantial improvement in overall photoanode efficiency.

Spin coating deposition of tin oxide thin films: Influence of solution concentration

Tin oxide (SnO2) thin films were deposited on glass substrates using a cost-effective spin coating method. The effect of solution molarity on their microstructural, optical, and electrical properties was investigated. For this purpose, solutions of tin chloride salt were prepared with various molarity in the range of 0.1M to 0.25M. The synthesized films structure and morphology were characterized by different techniques such as X-ray diffraction and scanning electron microscopy. The optical and electrical properties were studied by mean of UV-Vis spectroscopy and four probes conductivity measurement. The X-ray diffraction patterns of all samples revealed well-crystallized and pure SnO2 films with tetragonal rutile structure. The scanning electron microscopy images reveal a smooth and dense film pinholes free. The optical analyses show that the films exhibit an optical transparency that reaches up to 98% in the visible range and that the optical band gap decreases from 3.97 to 3.82 eV when the concentration increases from 0.1M to 0.25M. The films’ electrical conductivity varies in the range from 76 to 100 (Ω cm)–1. The largest figure of merit of 9.8 × 10–3 was measured in the films prepared at low solution concentration.

Density Functional Theory (DFT) Based Local Density Approximation (LDA) Study on Tailoring Electronic and Optical Properties of SnO and In-Doped SnO

The ambipolar nature of SnO has significantly increased its potential for using in p-n junction devices, for which it has drawn the attention of the scientific community. In this paper, the structural, electronic, and optical properties of SnO and the impact of Indium (In) doping into SnO are computed by Local Density Approximation (LDA) under the density function theory (DFT) framework. The calculated bond length of SnO in SnO is 2.285 Å, and that deviates  3% from the experimental value. The SnO and InO bond lengths in In-doped SnO are calculated to be 2.3094 and 2.266 Å, respectively. Interestingly, The band gap of pure SnO is calculated to be 2.61 eV, whereas it is significantly dropped down to 2.00 eV in the case of In doped SnO. The Total Density of State (DOS), Partial DOS, and electron density are depicted for SnO and In-doped SnO. As a consequence of In-doping static value of the refractive index and the real part of the dielectric function for SnO decrease from 1.9 to 1.4 and 3.6 to 1.97, respectively. Therefore, In-doping enhances the properties of the SnO film, which may lead the material to be applied in the future to develop electronic and opto-electronic devices.

Development of a Screening Platform for Optimizing Chemical Nanosensor Materials.

Chemical sensors, relying on changes in the electrical conductance of a gas-sensitive material due to the surrounding gas, typically react with multiple target gases and the resulting response is not specific for a certain analyte species. The purpose of this study was the development of a multi-sensor platform for systematic screening of gas-sensitive nanomaterials. We have developed a specific Si-based platform chip, which integrates a total of 16 sensor structures. Along with a newly developed measurement setup, this multi-sensor platform enables simultaneous performance characterization of up to 16 different sensor materials in parallel in an automated gas measurement setup. In this study, we chose the well-established ultrathin SnO2 films as base material. In order to screen the sensor performance towards type and areal density of nanoparticles on the SnO2 films, the films are functionalized by ESJET printing Au-, NiPt-, and Pd-nanoparticle solutions with five different concentrations. The functionalized sensors have been tested toward the target gases: carbon monoxide and a specific hydrogen carbon gas mixture of acetylene, ethane, ethne, and propene. The measurements have been performed in three different humidity conditions (25%, 50% and 75% r.h.). We have found that all investigated types of NPs (except Pd) increase the responses of the sensors towards CO and HCmix and reach a maximum for an NP type specific concentration.

Multifunctional buried interface engineering via phenyl-phosphonic acid for efficient and stable SnO2-based planar perovskite solar cells

Tin dioxide (SnO2) is widely used as an electron transport layer (ETL) in efficient and stable perovskite solar cells (PSCs) due to its excellent optoelectronic properties and low-temperature solution preparation process. However, SnO2 ETLs fabricated by the conventional solution method have many defects, among which Sn dangling bonds (i.e., oxygen vacancies) are particularly prominent. Herein, a simple buried interface engineering is employed to introduce phenyl-phosphinic acid (PPA) into the surface of SnO2 film for the preparation of highly efficient PSCs. A series of test results have shown that the phosphate group (PO) in PPA can not only passivate oxygen vacancy defects on the surface of SnO2, but also improve the film-forming quality of the upper perovskite, thereby exhibiting better photoelectric conversion efficiency (PCE) and stability. Ultimately, the optimized device achieves a maximum PCE of 22.81 %, an improvement of about 15 % over the control device (19.82 %). Meanwhile, the nonencapsulated device based on SnO2-PPA ETL shows much better storage and light stability than the control SnO2.