Modifying the buried interface by a sulfamate enable efficient perovskite solar cells with high stability

Abstract

The buried interface between the pivotal perovskite layer and the electron transfer layer (ETL) greatly affects the photoelectric property of perovskite layer and the final performance of a perovskite solar cell (PSC). Effectively modifying the buried interface is feasible to improve the photoelectric conversion efficiency (PCE) and stability of PSCs. Herein, we employ a sulfamate sodium 4-aminoazobenzene-4′-sulfonate (SABS) with zwitterion to modify the SnO2 film surface to improve the performance of PSCs. The post-treatment makes the surface of SnO2 film smoother and also passivate the anion and cation vacancies of SnO2, which are benefit to the growth of perovskite crystals and strengthen the interface contact between SnO2 layer and perovskite layer. Furthermore, SABS molecules can passivate defects of perovskite layer at the buried interface. By using this post-treating method, the PCE of the final PSC is increased from 21.76 % to 23.86 %, and the storage and operational stability are also significantly improved. This promotion the buried interface via post-treating the SnO2 film with a zwitterion passivator provides a convenient strategy to effectively improve the performance and stability of PSCs.