Interface engineering plays an important role in improving the performance of perovskite devices. Herein, we reported two perylenediimide small molecular cathode interface materials (CIMs), PDI-2N and PDI-4N, synthesized by a simple method and with good alcohol soluble, which could be used as cathode interfacial layer (CIL) for high-performance inverted perovskite solar cells (PVSCs). The PDI-4N exhibits larger electrical conductivity, electron mobility and self-doping properties than PDI-2N because of more dimethylamino functional groups in the amide positions. Based on these superiorities, a peak PCE of 21.33% with PDI-4N as CIL was achieved, which is the highest PCE for PDI-based interlayer materials as the cathode interlayer in inverted PVSCs. While the PCE with PDI-2N as CIL is only 17.41%. The significant improvement in device efficiency for PDI-4N based device is due to reduced defect density, lower dark current, larger recombination resistance and better surface morphology, which improved charge transport and collection at the PC61BM/Ag interface. Moreover, the ambient stabilities of PVSCs with PDI-2N and PDI-4N as CIL show that the CILs can effectively improve the device stability, and good stability with a PCE loss of only ∼3.0% after 600 h is also obtained. In a word, this work will provide us with molecular design approach by one-step to develop novel cathode interface materials with functional side chains for high-efficiency PVSCs.