Slow Response Speed Research Articles

Research on the Performance and Control Strategy of Electro-Hydraulic Servo System for Selective Hole Digging Tree Planter

Compared to agricultural environments, afforestation sites are more complex, often presenting issues such as undulating and uneven terrain. These conditions lead to instability in hole digging depth and plant spacing during continuous movement, and the hole shape may not meet expectations. Additionally, the hydraulic system exhibits slow response speed and long steady-state time, affecting the quality of sapling planting. To address these issues, this paper designs an intelligent planting control system for intermittent hole digging under continuous dynamic movement, based on a large tree planter. The focus is on studying the dynamic accuracy of the hole digging cylinder to resolve the instability of plant spacing and planting depth in actual planting processes. Firstly, a motion trajectory model of the intermittent hole digging mechanism is established to obtain the relationship between the displacement trajectory of the rotating cutter and the displacements of the floating cylinder and the hole digging cylinder. Secondly, a mathematical model of the electro-hydraulic servo system is established to control the dynamic accuracy of the hole digging operation. Finally, a Simulink simulation model of the system is established to analyze the performance indicators of the hydraulic system during operation using step and sinusoidal excitation signals. The test results show that the displacement of the hydraulic piston rod can ensure a linear extension trend within the range of 0 to 0.4 m, and the extension distance of the hole digging cylinder in the planting system is 0 to 0.35 m, ensuring linear change within this stroke. When the system’s extension command is 1 V, the actual output is 0.6 m, with a relative error of less than 10% compared to the simulation value, indicating that the control strategy can effectively improve the dynamic performance of the system. When the hydraulic system is in a steady-state extension state at 50 to 58.6 s, the relative error with the simulation value is 7.3%, meeting the “double ten indicators” requirement. The research results clearly verify the superior performance of the proposed intelligent control system, and the proposed control strategy has great potential in practical applications, promising to improve afforestation quality by stabilizing planting spacing and planting depth.

Biomimetic soft actuator: Rapid response to multiple stimuli with programmable control

Stimuli-responsive soft actuators have attracted increasing attention in multiple fields since they exhibit unique advantages in safe interaction with humans and adaptability to dynamic environments. However, the study of untethered stimuli-responsive soft actuators has been limited by the slow response speed, irreversible deformations or inability in responding to multiple stimuli. Taking inspiration from the growth process of lotus leaves, we propose a novel design for an untethered soft actuator comprising graphene oxide (GO) and polyethylene (PE), which shows sensitive response to multiple stimuli, including moisture, light, heating, cooling, and elective volatile organic compounds (VOCs), and exhibits significant deformation at a rapid rate (up to 90.5°/s). The high sensitivity of the actuators enables them to be powered by the neglected energy in daily life instead of requiring specialized energy sources, paving the way for the green and sustainable development in soft robotics. In addition, the bending modes and bending degrees of actuators can be programmed to meet the personalized needs of complex three-dimensional structures. Based on GO/PE actuators, a variety of multi-stimuli-responsive intelligent devices have been developed to demonstrate their application potential in arts, bionics, soft robotics and wearable devices, including interesting WordArt, Chinese paper-cut art pieces, artificial iris, soft crawling robots and a smart cloth unit with adjustable breathability.

2D Gr/WSe2/MoTe2 vertical heterojunction for self-powered photodiode with ultrafast response and high sensitivity

Two-dimensional materials without lattice constraints can be combined into form heterojunctions via van der Waals forces, providing opportunities for the future development of novel high-performance photodetectors. In non-vertical heterojunction devices with long carrier transport channels, SRH recombination due to defect and interface states in the heterojunction and Langevin recombination due to Coulomb interactions induce large amounts of photogenerated carrier recombination, leading to low quantum efficiencies of the heterojunction. At the same time, defect and interface trap states, as well as the long channel of the non-vertical heterojunction device, lead to a slow response speed of the device. In this work, a 2D WSe2/MoTe2 vertical heterojunction photodiode with a transparent graphene top electrode has been designed to simultaneously achieve high sensitivity and fast response speed of photodetectors. Benefiting from the vertical device structure, high-quality interface and low contact resistance, the photogenerated electron-hole pairs can be efficiently separated and transported. The photodiode exhibits remarkable rectification characteristics with a rectification ratio as high as 1.4 × 104, and provides a broadband and self-powered photodetection from the visible to NIR bands (405–1064 nm) with a maximum responsivity of 0.33 A/W at 785 nm. In particular, the photodiode achieves an ultra-fast rise/fall time of 6.49/6.22 μs at 0 V and a further reduction of the response time to 1.68/1.2 μs at a reverse bias of −1 V. This ultra-fast response allows the photodiode to detect switching signals with a cutoff frequency of more than 70 kHz and 200 kHz at 0 V and −1 V, respectively. This work opens up new opportunities for the development of integrated 2D photodetectors with low power consumption, high sensitivity, and high speed.

Plasma surface treatment of amorphous Ga2O3 thin films for solar-blind ultraviolet photodetectors

Recently, amorphous gallium oxide (a-Ga2O3) thin films are gaining more and more attention due to their advantages of low cost and low temperature growth. However, a-Ga2O3 solar-blind ultraviolet photodetectors are plagued by issues such as slow response speed and high dark current. In this work, radio frequency magnetron sputtering was used for a-Ga2O3 deposition, and a novel approach of plasma treatment (including oxygen, argon and hydrogen plasmas) was employed to tailor the device performance using a plasma-enhanced chemical vapor deposition system. It is demonstrated that: (i) the oxygen atoms and ions in the oxygen plasma effectively reduce the oxygen vacancy concentration and improve the respond speed of a-Ga2O3 photodetectors; (ii) the argon ions in the argon plasma create additional defects (such as dangling bonds and oxygen vacancies) and improve the responsivity of a-Ga2O3 photodetectors; (iii) the hydrogen atoms in the hydrogen plasma may incorporate into the film and form an ultra-thin passivation layer near the surface, which gives rise to a balance between responsivity and response speed. Finally, through the detailed analysis of the optical emission spectra and photoelectric performance, the underlying physical mechanism based on the energy band diagram has been proposed to interpret the obtained experimental results.

5CB-doped polymer-stabilised sphere-phase liquid crystal smart window with fast response and high transmittance

ABSTRACT Smart windows have become increasingly popular due to their ability to provide privacy protection, energy efficiency, and user control. Therefore, this technology has a wide range of applications in various fields such as construction, automotive, aviation, and renewable energy. However, commercialisation faces two significant challenges due to the slow response speed and low transmittance. This work demonstrates a 5CB-doped polymer-stabilised sphere-phase liquid crystal (PS-SPLC) smart window with sub-millisecond response time, which can be switched between transparent and scattering states by an electric field. The transmittance exceeds 90% when the voltage is on in the visible light range. This 5CB-doped PS-SPLC smart window has the potential to usher in a new era of smart window research.

High-Performance Ultraviolet Photodetectors Based on Nanoporous GaN with a Ga2O3 Single-Crystal Layer.

The utilization of a nanoporous (NP) GaN fabricated by electrochemical etching has been demonstrated to be effective in the fabrication of a high-performance ultraviolet (UV) photodetector (PD). However, the NP-GaN PD typically exhibits a low light-dark current ratio and slow light response speed. In this study, we present three types of UV PDs based on an unetched GaN, NP-GaN distributed Bragg reflector (DBR), and NP-GaN-DBR with a Ga2O3 single-crystal film (Ga2O3/NP-GaN-DBR). The unetched GaN PD does not exhibit a significant photoresponse. Compared to the NP-GaN-DBR PD device, the Ga2O3/NP-GaN-DBR PD demonstrates a larger light-dark current ratio (6.14 × 103) and higher specific detectivity (8.9 × 1010 Jones) under 365 nm at 5 V bias due to its lower dark current (3.0 × 10-10 A). This reduction in the dark current can be attributed to the insertion of the insulating Ga2O3 between the metal and the NP-GaN-DBR, which provides a thicker barrier thickness and higher barrier height. Additionally, the Ga2O3/NP-GaN-DBR PD device exhibits shorter rise/decay times (0.33/0.23 s) than the NP-GaN-DBR PD, indicating that the growth of a Ga2O3 layer on the DBR effectively reduces the trap density within the NP-GaN DBR structure. Although the device with a Ga2O3 layer presents low photoresponsivity (0.1 A/W), it should be feasible to use Ga2O3 as a dielectric layer based on the above-mentioned reasons.

Neural indices of heritable impulsivity: Impact of the COMT Val158Met polymorphism on frontal beta power during early motor preparation

Studies of COMT Val158Met suggest that the neural circuitry subserving inhibitory control may be modulated by this functional polymorphism altering cortical dopamine availability, thus giving rise to heritable differences in behaviors. Using an anatomically-constrained magnetoencephalography method and stratifying the sample by COMT genotype, from a larger sample of 153 subjects, we examined the spatial and temporal dynamics of beta oscillations during motor execution and inhibition in 21 healthy Met158/Met158 (high dopamine) or 21 Val158/Val158 (low dopamine) genotype individuals during a Go/NoGo paradigm. While task performance was unaffected, Met158 homozygotes demonstrated an overall increase in beta power across regions essential for inhibitory control during early motor preparation (∼100 ms latency), suggestive of a global motor “pause” on behavior. This increase was especially evident on Go trials with slow response speed and was absent during inhibition failures. Such a pause could underlie the tendency of Met158 allele carriers to be more cautious and inhibited. In contrast, Val158 homozygotes exhibited a beta drop during early motor preparation, indicative of high response readiness. This decrease was associated with measures of behavioral disinhibition and consistent with greater extraversion and impulsivity observed in Val homozygotes. These results provide mechanistic insight into genetically-determined interindividual differences of inhibitory control with higher cortical dopamine associated with momentary response hesitation, and lower dopamine leading to motor impulsivity.

A voltage-driven dual-mode MoSe2 photodetector with graphene as van der Waals contact

Two-dimensional (2D) molybdenum selenide (MoSe2) is promising for use in the development of photodetectors for the harvesting of light from the ultraviolet to the near-infrared band, while high responsivity and fast response speed are difficult to simultaneously realize. Herein, we present a dual-mode MoSe2 photodetector with asymmetric electrodes, in which graphene and Cr metal are utilized as ohmic and Schottky contacts, respectively. The photodiode possesses fabulous Schottky characteristics, with a rectification ratio of ∼250 and a low dark current of ∼40 pA at −1 V. Under forward bias voltage of 1 V, the photodetector works in photoconductive mode with a slow response speed (decay time: ∼5 min) but high responsivity (632 mA W−1). However, at reverse bias voltage, the photodetector acts as a photovoltaic-type device due to the Schottky barrier between Cr and MoSe2. Because of the reinforced built-in electric field, the photodetector driven at −5 V shows much faster response speeds (rise time: 1.96 ms; decay time: 755 µs). This study provides a deep understanding of asymmetric structure MoSe2 photodetectors operated in two modes, which promotes a forward step toward 2D material optoelectronics.

Classification and identification of tea diseases based on improved YOLOv7 model of MobileNeXt

To address the issues of low accuracy and slow response speed in tea disease classification and identification, an improved YOLOv7 lightweight model was proposed in this study. The lightweight MobileNeXt was used as the backbone network to reduce computational load and enhance efficiency. Additionally, a dual-layer routing attention mechanism was introduced to enhance the model’s ability to capture crucial details and textures in disease images, thereby improving accuracy. The SIoU loss function was employed to mitigate missed and erroneous judgments, resulting in improved recognition amidst complex image backgrounds.The revised model achieved precision, recall, and average precision of 93.5%, 89.9%, and 92.1%, respectively, representing increases of 4.5%, 1.9%, and 2.6% over the original model. Furthermore, the model’s volum was reduced by 24.69M, the total param was reduced by 12.88M, while detection speed was increased by 24.41 frames per second. This enhanced model efficiently and accurately identifies tea disease types, offering the benefits of lower parameter count and faster detection, thereby establishing a robust foundation for tea disease monitoring and prevention efforts.

Application of neural network algorithm in computer data information processing system

In order to solve the problem that the data processing frequency of the traditional centralized data processing system is low, which leads to the poor feedback effect of massive data, this paper proposes a computer data information processing system based on neural network algorithm. Based on the original system hardware, the system replaces the data processor and increases the total number of the processor, so as to realize the distributed synchronous processing of massive data. In the aspect of software design, the interaction between system units and modules is formed through the protocol to improve the data communication mode of the system; Calculate the Euclidean distance and set the distributed processing mode of the system; According to the definition of cloud computing, the classification function is used to determine the constraints, establish the processing frequency equation, and realize the rapid processing of massive data. The experimental results show that the processing frequency of the system designed in this paper is more than 50 % higher than that of the traditional system, which solves the problem of low processing frequency caused by weak analysis ability and slow response speed in the traditional system. Conclusioncompared with the traditional system, the system designed in this paper has faster processing frequency for massive data and better feedback effect to users.

Magneto-Mechanical Coupling Analysis of Automobile Brake by Wire System Based on Giant-Magnetostrictive Actuator

Addressing the drawbacks of traditional automotive braking systems, including long hydraulic lines, heavy weight, and slow response speed, a new type brake by wire system based on giant-magnetostrictive material is proposed, which consists of giant-magnetostrictive actuator module and mechanical drive module. In this paper, CATIA software is used to establish a three-dimensional model of the brake. In order to verify the reliability of the model, giant-magnetostrictive actuator is taken as the research object, and COMSOL software is used to simulate different working conditions of automobile braking. A Magneto-mechanical coupling model was established and Magneto-mechanical coupling analysis of the actuator was carried out. The simulation results show that the aluminum shell material is superior to the 45 steel shell material. The inductance direction of the actuator is approximately elliptical from top to bottom, with uniform distribution of magnetic flux density and stress. The output stress is 5e4N/m2, and the maximum elongation is 0.1071mm. Finally, the driving efficiency of GMA was verified on an optical isolation platform, and comparative experiments were conducted before and after optimization using instruments such as laser displacement samplers, Tesla meters, and force sensors. The experimental results indicate that by optimizing the housing material and structure of the actuator, the displacement increased from 0.05188mm to 0.1003mm, magnetic induction increased from 42.9mT to 79.9mT, resulting in an increase of 41.6% and 42.7% respectively, and the maximum output force was 4752.3N. It makes a certain contribution to the application of GMA to automotive braking field and further proves the effectiveness of GMA in the application of automobile brake by wire system.

Interface‐Engineering Induced Swift and Controllable Solar‐Blind Photoresponse in Ga2O3/SiC Heterojunction Based on Unconventional Rectification Characteristics

AbstractGa2O3 photodetectors with demonstrated high sensitivity provide a potential subversive scheme for solar‐blind photodetection. However, the planar structure and the relatively slow response speed of the device have restricted the integration and application of Ga2O3 photodetectors. Herein, a narrow SiO2 barrier layer is introduced on the commercial SiC substrate, and a vertical photodetector is realized based on β‐Ga2O3/SiO2/SiC heterostructure with controllable tunneling effect by tailoring the band structure at the interface. The developed device exhibits unconventional rectification characteristics and photoresponse performance in different biasing modes owing to the controllable tunneling effect at the interface. In particular, the photodetector achieves a high responsivity (186.8 A W−1) under solar‐blind illumination at reverse bias, while exhibiting obvious advantages in dark current (3 pA), photo‐to‐dark current ratio (8.8 × 106), linear dynamic range (138.8 dB), and specific detectivity (1.4 × 1015 Jones) at forward bias. The photodetector also demonstrates excellent photoresponse stability after 6 months in air without encapsulation. In addition, an alternating biasing strategy, inspired by its bidirectional operability, is proposed to suppress the persistent photoconductivity effect and increase the decay speed by 1.23 × 105 times. This work provides a referable strategy for the further development of high‐performance Ga2O3‐based photoelectronics.

MXene/AlGaN van der Waals heterojunction self-powered photodetectors for deep ultraviolet communication

Self-powered deep ultraviolet (DUV) photodetectors (PDs) have attracted considerable attention in environmental, industrial, and military fields because of their power-independent and environmentally sensitive photodetection. However, DUV PDs based on traditional thin film structures are limited by the low intrinsic mobility of aluminum-gallium nitride (AlGaN) and the large barrier width of the heterogeneous structure, which makes it difficult to achieve efficient spontaneous separation, resulting in lower responsiveness and a slow response speed. Herein, a 2D/3D DUV PD based on the MXene, niobium carbide (Nb2CTx)/AlGaN van der Waals heterojunctions (vdWHs) has been proposed. The as-prepared DUV PDs revealed self-powered properties with a high responsivity of 101.85 mA W−1, as well as a fast response (rise/decay time of 21/22 ms) under 254 nm DUV illumination, thanks to the excellent electrical conductivity and tunable work function of the MXene. It also showed a large linear dynamic range of 70 dB under −2 V bias because of the strong DUV absorption of MXene/AlGaN vdWH, and the enhanced carrier mobility under high illumination density. This study presents an easy processing route to fabricate high-performance self-powered DUV PDs based on MXene/AlGaN vdWHs for DUV communication.

Broadband InBiSe3 alloy photoelectric detector from visible to terahertz

With the demand for communication, imaging, spectroscopy, and other applications, broadband detection has always been a particularly popular direction. However, the current photodetectors have the problems of relatively narrow response bands, a low sensitivity, a slow response speed, and complex manufacturing processes. In this article, the alloy material InBiSe3 is proposed to manufacture a wideband photodetector from visible to terahertz at room temperature. The noise equivalent power (NEP) of the detector is 1.37 × 10−10 W Hz−1/2 at 635 nm, 1.2 × 10−10 W Hz−1/2 at 808 nm, and 1.56 × 10−10 W Hz−1/2 at 980 nm. The device also exhibits a good response in the terahertz and millimeter-wave bands, with a NEP of 8.33 × 10−15 W Hz−1/2 at 0.023 THz, 7.03 × 10−14 W Hz−1/2 at 0.14 THz, 6.14 × 10−15 W Hz−1/2 at 0.171 THz, 1.91 × 10−14 W Hz−1/2 at 0.35 THz, and 4.04 × 10−14 W Hz−1/2 at 0.5 THz based on the electromagnetic induced potential wells effect. The response time is as fast as 10 µs. Our results demonstrate the promise of the InBiSe3 alloy for photoelectric applications and provide a method for the high performance of broadband photodetectors.

Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity

The emergent two-dimensional (2D) material, tin diselenide (SnSe2), has garnered significant consideration for its potential in image capturing systems, optical communication, and optoelectronic memory. Nevertheless, SnSe2-based photodetection faces obstacles, including slow response speed and low normalized detectivity. In this work, photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures have been implemented through a polydimethylsiloxane (PDMS)−assisted transfer method. These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range. The photodetector based on the SnS/SnSe2 heterostructure exhibits a significant responsivity of 4.99 × 103 A∙W−1, normalized detectivity of 5.80 × 1012 cm∙Hz1/2∙W−1, and fast response time of 3.13 ms, respectively, owing to the built-in electric field. Meanwhile, the highest values of responsivity, normalized detectivity, and response time for the photodetector based on the SnSe/SnSe2 heterostructure are 5.91 × 103 A∙W−1, 7.03 × 1012 cm∙Hz1/2∙W−1, and 4.74 ms, respectively. And their photodetection performances transcend those of photodetectors based on individual SnSe2, SnS, SnSe, and other commonly used 2D materials. Our work has demonstrated an effective strategy to improve the performance of SnSe2-based photodetectors and paves the way for their future commercialization.

Interfacial Engineering of Selenium‐Based Photodiodes for Extremely Low‐Noise Photodetection and Single‐Pixel Imaging

AbstractSelenium as one of the most historical semiconductors has been used for photovoltaics and photodetection, thanks to its excellent optoelectronic properties, superior stability, facile and low‐cost fabrication. However, commercialized Se‐based devices are mainly based on its amorphous state, which significantly limits the charge transport and requires relatively large bias voltage. The charge carrier dynamics of high‐performance crystalline Se thin films are barely reported, and related photodiodes have not been realized mainly limited by the large dark current and slow response speed. Here, poly‐crystalline Se thin films via vacuum evaporation, in situ thermal annealing, and engineered the interfaces with various metal electrodes are fabricated, which resulted in enhanced charge transport properties and reduced device leakage. The optimized Se photodiodes exhibited excellent performance metrics, including extremely low dark current density, decent specific detectivity, and superior stability. Furthermore, the optimized Se photodetectors are also introduced for single‐pixel imaging, which demonstrates excellent sensitivity and great potential for real applications.

A Novel Self‐Powered and High Switching Ratio UV–vis Photodetector Based on Multilayer Bi2O3/In2O3 Heterojunction

Metal oxides have attracted more and more attention as common candidates for photodetectors. However, most metal oxide detectors are limited by the shortcomings such as wide bandgap, high manufacturing cost, and slow response speed. Herein, a UV–vis Bi2O3/In2O3 heterojunction photodetector is successfully achieved by a two‐step spin coating method. Based on X‐ray diffraction and scanning electron microscopy measurements, the crystal form and morphology of the Bi2O3/In2O3 heterojunction are determined. The UV–vis absorption spectroscopy and UV photoelectron spectroscopy tests indicate that the Bi2O3/In2O3 forms a type II heterojunction and the successful combination of the two enhances the light detection capability of the photodetector. Additionally, the Bi2O3/In2O3 heterojunction photodetector possesses a self‐powered characteristic with a responsivity, detectivity, and response time of 0.66 mA W−1, 5.78 × 1010 Jones, and 1.90 s, respectively. The above results demonstrate that the multilayer Bi2O3/In2O3 heterojunction is a promising UV–vis broadband photodetector.

A novel hybrid magnetic material based on three-phase saturated core fault current limiter

Installing a three-phase saturated core fault current limiter (TSFCL) is an effective method to limit the increasing short-circuit current in high-voltage alternating current (HVAC) systems. However, the traditional TSFCL uses silicon steels as its working material for the iron core, resulting in poor current-limiting effects, requiring a large DC excitation current, and having a slow response speed. Nanocrystalline alloys have advantages such as a lower saturation point, higher permeability in the unsaturated zone, and a steep B–H curve, making them highly suitable for TSFCL’s applications. However, their poor capability which withstands fault hindered their large-scale commercialization. Therefore, this paper proposes a novel hybrid magnetic material based on TSFCL (HMTFCL), where the materials of the working limbs are replaced by nanocrystalline alloys. Compared to TSFCL, the DC excitation current of HMTFCL decreases by 60.5%. And, the HMTFCL reduces the peak short-circuit current by 23%. Last, the magnetic flux intensity inside the working limb of HMTFCL is reduced to zero more quickly.

One High Voltage Regulation Method and Related Control Strategy in the DC Transmission System

Background: With the development of power transmission system, the problem of small transmission capacity and low power quality of traditional AC power distribution methods is becoming increasingly prominent. The DC power distribution method promotes its own rapid development because of its suitability of connection between distributed generation and grid, high power quality, large power supply capacity, low line cost and high reliability. Objective: In order to improve the transient performance when the system power fluctuates, a control method that can perform voltage regulation to the DC system is designed in the process of calculating the power command value of each converter station at the system level control. Simulation results show that the designed control method can effectively improve the inertial characteristics and transient response of DC transmission system. Methods: Aiming at the shortcomings of slow response speed and poor stability when the traditional dual closed-loop PI controller is used as a converter level controller, a sliding mode controller is designed. Simulation results show that the designed sliding mode controller can improve transient characteristics of voltage regulation. Results: Voltage control strategy of the DC transmission network based on the converter station is verified. Conclusion: A voltage control strategy based on distributed generation and secondary load switching is designed. The simulation verifies the effectiveness of the designed control strategy.

Photogating-assisted tunneling boosts the responsivity and speed of heterogeneous WSe2/Ta2NiSe5 photodetectors

Photogating effect is the dominant mechanism of most high-responsivity two-dimensional (2D) material photodetectors. However, the ultrahigh responsivities in those devices are intrinsically at the cost of very slow response speed. In this work, we report a WSe2/Ta2NiSe5 heterostructure detector whose photodetection gain and response speed can be enhanced simultaneously, overcoming the trade-off between responsivity and speed. We reveal that photogating-assisted tunneling synergistically allows photocarrier multiplication and carrier acceleration through tunneling under an electrical field. The photogating effect in our device features low-power consumption (in the order of nW) and shows a dependence on the polarization states of incident light, which can be further tuned by source-drain voltages, allowing for wavelength discrimination with just a two-electrode planar structure. Our findings offer more opportunities for the long-sought next-generation photodetectors with high responsivity, fast speed, polarization detection, and multi-color sensing, simultaneously.