Slow Response Speed Research Articles

Structure Improvement and Control Algorithm Optimization-Based Ground Automatic Neutral-Section Passing Method for Train

Passing the neutral section can causes transient impact and speed loss of the train. Therefore, whether the potential danger of the pantograph-catenary system can be eliminated under the condition of full load operation becomes one of the essential factors for the safe and efficient operation of electric locomotives. This paper proposes an advanced method to optimize the structure and control algorithm, according to the drawbacks of existing methods, such as miniature circuit capacity, poor output driving ability, low control accuracy, and slow system response speed. In this method, the pantograph-catenary arc is restrained by controlling the dynamic alternating transfer of instantaneous power. Besides, the voltage pre-modulation algorithm is used to realize flexible voltage switching between different adjacent power supply arms. Compared with the existing methods, this method can provide better system response output capability. And this can effectively suppress transient impact and ensure full load train operation safety. Finally, in terms of transient suppression effect and resistance to external environmental interference, a series of functional verification and horizontal comparison experiments have proved the feasibility, superiority and robustness of this method.

Robust anti-disturbance control of a high-pressure electro-pneumatic servo valve directly driven by voice coil motor

System uncertainty, external disturbances and complex nonlinearities are the main obstacles for high precision control of HESVs. Due to good anti-disturbance capability and low model dependence, linear active disturbance rejection control (LADRC) is popular in engineering practice. However, when LADRC is applied to HESVs, LADRC has limited anti-disturbance capability for high-pressure gas flow force, slow response speed and small response bandwidth, and quickly causes step oscillations. In this paper, the reasons for the remarkable phenomenon of step oscillations and the limited anti-disturbance capability of LADRC are theoretically analyzed and then proved by simulations and experiments. Subsequently, a new robust anti-disturbance control method (RI-ESO) is proposed for the HESV to solve the problem of step oscillations and further improve the dynamic response and anti-disturbance capability. The RI-ESO combines an extended state observer (ESO) and a robust controller. The partial total disturbance is estimated by ESO and then compensated online. The robust integrated controller (RI) can further compensate the remaining nonlinearities and external disturbances to achieve better control performance. The introduction of ESO can reduce the parameter limitations of the robust controller. Various simulations and experiments demonstrate that the RI-ESO can greatly improve the control performance and anti-disturbance capability of HESVs, and effectively avoid step oscillations.

Low-power, fast response simplified electrochromic device based on functionalized gel electrolyte

Metallo-supramolecular polymer (MEPE)-based thin film electrochromic devices (ECDs) have been considered to be a promising platform for portable electronics as their low cost, excellent redox properties, high optical contrast, and rich colors. However, poor cycle stability and slow response speed are serious bottlenecks for widespread commercial devices. Here, a gel electrolyte functionalized by the anodic active species p-benzoquinone (p-BQ) (GET-BQ) was reported. It has outstanding conductivity (∼4.62 mS cm−1) and transparency. Fe(Ⅱ)-MEPE-based ECDs incorporating the GET-BQ electrolyte (ECD-BQ) showed lower voltage operation (∼1.1 V), higher optical contrast (ca. ΔT ∼ 35.7%), faster response rate (tb ∼ 2.5 s, tc ∼ 0.3 s), and superb cycling durability (<1.7% ΔT loss after 1440 cycles) than those without p-BQ. Moreover, the charge transport kinetics of ECD-BQ were explored by the CV curve, in situ infrared spectroelectrochemical analysis, and electrochemical impedance spectroscopy. The charge transfer mechanism of electrochromic material and electrolytes in ECD-BQ offers a novel entry to design superior electrolytes for high-performance ECD.

Gate-controlled photoresponse improvement in b-AsP/WSe2 heterostructures with type-I band alignment

As a promising two-dimensional (2D) layered material, black arsenic phosphorus (b-AsP) alloys have received growing attention due to their unique properties and their ability for high-performance broadband photodetection. However, high dark current and slow response speed have already become bottlenecks for further development. Manual vertical van der Waals heterojunctions made of different 2D materials offer opportunities to alleviate such bottlenecks in a simple and low-energy way. The rational design of band alignment can facilitate device performance. In this work, we design and achieve a type-I vertically stacked WSe2/b-As0.084P0.916 device, which exhibits a rectification ratio of 102 along with an unusual backward current as low as 10−12 A. As such, this device can function as an ultrasensitive photodetector, which shows excellent photoresponse properties from the visible to near-infrared region (275–850 nm), with a responsivity of 244 A/W, a specific detectivity of 2.27 × 1012 Jones, and a fast response speed of τrise ≈ 5.1 ms and τdecay ≈ 4 ms. Compared to the dark state, the hole mobility under light stimulation is raised more than ten times (from 1.1 to 12.1 cm2 V−1 s−1), which contributes to numerous excited electron–hole pair transfers from WSe2 to b-As0.084P0.916. The responsivity and detectivity increase by 5 and 3 orders of magnitude, respectively, after applying gate voltage, indicating remarkable gate-controlled properties. These results suggest that the WSe2/b-As0.084P0.916 heterostructure is a promising candidate for future electronic and optoelectronic applications.

Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance.

In recent years, two-dimensional (2D) nonlayered Bi2O2Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability to the atmosphere, and moderate narrow band gaps. However, 2D Bi2O2Se-based photodetectors typically present large dark current, relatively slow response speed, and persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors and low-consumption broadband detection. Herein, a Bi2O2Se/2H-MoTe2 van der Waals (vdWs) heterostructure obtained from the chemical vapor deposition (CVD) approach and vertical stacking is reported. The proposed type-II staggered band alignment desirable for suppression of dark current and separation of photoinduced carriers is confirmed by density functional theory (DFT) calculations, accompanied by strong interlayer coupling and efficient built-in potential at the junction. Consequently, a stable visible (405 nm) to near-infrared (1310 nm) response capability, a self-driven prominent responsivity (R) of 1.24 A·W-1, and a high specific detectivity (D*) of 3.73 × 1011 Jones under 405 nm are achieved. In particular, R, D*, fill factor, and photoelectrical conversion efficiency (PCE) can be enhanced to 4.96 A·W-1, 3.84 × 1012 Jones, 0.52, and 7.21% at Vg = -60 V through a large band offset originated from the n+-p junction. It is suggested that the present vdWs heterostructure is a promising candidate for logical integrated circuits, image sensors, and low-power consumption detection.

Ultrahigh-Sensitivity and Fast-Speed Solar-Blind Ultraviolet Photodetector Based on a Broken-Gap van der Waals Heterodiode.

Broad-bandgap semiconductor-based solar-blind ultraviolet (SBUV) photodetectors have attracted considerable research interest because of their broad applications in missile plume tracking, flame detectors, environmental monitoring, and optical communications due to their solar-blind nature and high sensitivity with low background radiation. Owing to its high light absorption coefficient, abundance, and wide tunable bandgap of 2-2.6 eV, tin disulfide (SnS2) has emerged as one of the most promising compounds for application in UV-visible optoelectronic devices. However, SnS2 UV detectors have some undesirable properties such as slow response speed, high current noise level, and low specific detectivity. This study reports a metal mirror-enhanced Ta0.01W0.99Se2/SnS2 (TWS) van der Waals heterodiode-based SBUV photodetector with an ultrahigh photoresponsivity (R) of ∼1.85 × 104 AW-1 and a fast speed with rising time (τr) of 3.3 μs and decay time (τd) of 3.4 μs. Notably, the TWS heterodiode device exhibits a significantly low noise equivalent power of ∼1.02 × 10-18 W Hz-1/2 and a high specific detectivity of ∼3.65 × 1014 cm Hz1/2 W-1. This study provides an alternative method for designing fast-speed SBUV photodetectors with enormous potential in applications.

Type II Homo-Type Bi2O2Se Nanosheet/InSe Nanoflake Heterostructures for Self-Driven Broadband Visible–Near-Infrared Photodetectors

Bi2O2Se nanosheets, an emerging ternary non-van der Waals two-dimensional (2D) material, have garnered considerable research attention in recent years owing to their robust air stability, narrow indirect bandgap, high mobility, and diverse intriguing properties. However, most of them show high dark current and relatively low light on/off ratio and slow response speed because of the large charge carrier concentration and bolometric effect, hindering their further application in low-energy-consuming optoelectronics. Herein, a homotype van der Waals heterostructure based on exfoliated n-InSe integrated with chemical vapor deposition (CVD)-grown n-Bi2O2Se nanosheets that have type II band alignment was fabricated. The efficient interfacial charge separation, strong interlayer coupling, and effective built-in electric field across the heterointerface demonstrated excellent, stable, and broadband self-driven photodetection in the range 400–1064 nm. Specifically, a high responsivity (R) of 75.2 mA·W–1 and a high specific detectivity (D*) of 1.08 × 1012 jones were achieved under 405 nm illumination. Additionally, a high R of 13.3 mA·W–1 and a high D* of 2.06 × 1011 jones were achieved under 980 nm illumination. Meanwhile, an ultrahigh Ilight/Idark ratio over 105 and a fast response time of 5.8/15 ms under 405 nm illumination confirmed the excellent photosensitivity and fast response behavior. Furthermore, R could be enhanced to 13.6 and 791 mA·W–1 under 405 and 980 nm illumination at a drain–source voltage (Vds) of 1 V, respectively, originating from a lower potential barrier. This study suggested that the Bi2O2Se nanosheet/InSe nanoflake homotype heterojunction can offer potential applications in next-generation broadband photodetectors that consume low energy and exhibit high performance.

Power supply circuit model and sliding mode control of supercritical unit boiler system commissioning

AbstractIn the process of power control and commissioning of supercritical unit boiler system, there are some problems such as large steady‐state error and slow response speed. In order to optimize the control performance of supercritical unit boiler system, the power supply loop model and sliding mode control method of supercritical unit boiler system debugging power supply are proposed. Firstly, the power supply circuit model is established according to the data of voltage doubling rectifier circuit, inverter circuit, high frequency transformer and LC resonant circuit. Secondly, the capacitance voltage value and the inductance current value are calculated in the power supply circuit model. Finally, based on the numerical results, a terminal sliding mode controller and a linear sliding mode controller are established to complete the double closed‐loop terminal sliding mode control and realize the power control of the debugging power supply. The experimental results show that when the input voltage is 50 V and the current is 14 V, the input voltage and current waveforms remain stable. When the input voltage is between 40 and 50 V, the change of switching frequency is small, only increasing from 22 to 26 kHz. The steady state of the power supply is high, and when the input voltage increases, the DC offset is 21.2. The convergence time in the calculation process is less than 200 ms. The instantaneous change of inductance is 0.7 A. The steady‐state error is less than 0.005 V. The output voltage distortion rate is less than 4%. It is proved that this method has strong control performance in the supercritical unit boiler system.

J‐Type Self‐Assembled Supramolecular Polymers for High‐Performance and Fast‐Response n‐Type Organic Electrochemical Transistors

AbstractTo date, high‐performance organic electrochemical transistors (OECTs) are almost all based on conjugated polymers. Small molecules can be synthesized with high purity without batch‐to‐batch variations. However, small molecules require highly crystalline films and good molecular packings to achieve high charge carrier mobilities. Such features make their films unsuitable for ion diffusion or make their molecular packing distorted due to ion diffusion, resulting in poor ion/charge carrier transport properties and slow response speed. Herein, it is proposed to construct small‐molecule‐based supramolecular polymers to address these issues. A molecule, namely TDPP‐RD‐G7 is designed, which exhibits J‐type self‐assembling behaviors and can form supramolecular polymers in solution and conjugated‐polymer‐like networks in solid state. More importantly, the porous supramolecular polymer networks allow fast ion diffusion and greatly increase the device response speeds. As a result, the TDPP‐RD‐G7 exhibits record fast response speeds (τon/τoff) of 10.5/0.32 ms with high figure‐of‐merit (µC*) of 5.88 F cm−1 V−1 s−1 in small‐molecule OECTs. This work reveals the possible reasons that hinder the response speeds in small‐molecule OECTs and demonstrates a new “supramolecular polymer” approach to high‐performance and fast‐response small‐molecule‐based OECTs.

Bionic Soft Robot Review

Traditional robots are mainly rigid structures. They are complex in structure but limited in flexibility, and have poor security and adaptability. At that time, many bio-inspired robots were created to overcome the traditional robotic challenges. Creatures gave us the inspiration to use a soft body to complete task, and then soft robotics were invented. This paper evaluated the future difficulties faced by this area, and listed the deficiencies that still need to be improved for soft robots that should be overcome in future projects as well. First of all, the first difficulty is that most soft robots rely on software drivers to complete tasks, and because of this, the driving functions of soft robots cannot be perfectly performed, and the action tasks are not diverse. Secondly, if the action moving is over flexible, it will be hard to control. The precision for missions cannot be satisfied. Thirdly, the choice of drivers type becomes another problem. For example, the memory alloy drive has the advantages of large driving force, controllable stiffness, good elasticity, etc., but it also has disadvantages such as easy aging and slow response speed. Although the pneumatic drive has a fast response rate, there is a risk that the fluid may leak, and the environment cannot be guaranteed to be airtight. Obviously, there is no ideal solution to work out actuation difficulties.

An adaptive linear active disturbance rejection control method for HVDC transmission system

With the advantages of large transmission capacity, low losses, rapid and flexible power regulation, and the ability to achieve non-synchronous networking, High Voltage Direct Current transmission systems are playing an increasingly important role in long distance transmission and grid interconnection. However, under certain circumstances, such as disturbances in the DC transmission system and sudden load changes, the converter based on PI control in DC transmission system suffer from slow response speed and poor stability. In order to improve the stability of the system and the response speed of DC voltage, this paper proposes an adaptive linear active disturbance rejection control (A-LADRC) method. The method is based on the analysis of the relationship between key bandwidth parameters and output quantities in linear active disturbance rejection control and enables adaptive adjustment of the controller bandwidth parameters for fast regulation of the DC voltage and to improve the stability of the DC voltage in the event of disturbances. Finally, the proposed control method is validated by simulation, and the results show that the proposed control method can effectively improve the response speed and robustness of the DC voltage, which has good practical engineering value.

A Fast Self‐Powered Solar‐Blind Ultraviolet Photodetector Realized by Ga2O3/GaN PIN Heterojunction with a Fully Depleted Active Region

AbstractGa2O3 is a wide bandgap semiconductor suitable for solar‐blind photodetection, but there exist two issues for Ga2O3‐based photodetectors: first, it is difficult to achieve reliable p‐type Ga2O3 and therefore form a homojunction photodetector, and the other is related with the slow response speed of Ga2O3‐based photodetectors. In this work, a self‐powered solar‐blind photodetector with a fast response using a p‐GaN/i‐Ga2O3/n‐Ga2O3 (pin) heterojunction with a fully depleted active region is realized, where i‐Ga2O3 serves as the main light‐absorbing active region. The device exhibits good self‐powered characteristics with a high responsivity of 72 mA W−1, a high photo‐to‐dark current ratio of 18 800, a high specific detectivity of 3.22 × 1012 Jones, and a fast response speed with a rise time/decay time of 7 ms/19 ms, respectively, without an external power supply. A detailed study of the interfacial electronic structure between p‐GaN and i‐Ga2O3 reveals a conduction band offset and valence band offset of 0.16 and 1.37 eV, respectively. Meanwhile, it has a large built‐in potential of 1.03 eV and a wide depletion region width of 235 nm in the i‐Ga2O3 side of heterojunction. It is believed that excellent device performance comes from a suitable energy band structure and wide depletion region.

A new electroactive fluorescent ionic liquid enables high-performance reflective/emissive dual-modal display device

Integrated reflective and emissive dual-modal displays capable of versatile applicability in both bright and dark environments have promoted the development of electrochromic/electrofluorochromic bifunctional materials, whose color and fluorescence properties can be electrochemically modulated on demand. However, conventional electrochromic/electrofluorochromic devices suffer from slow response speed and low long-term durability. Herein, an electroactive fluorescent ionic liquid (EFIL-TTM) was facilely synthesized based on electroactive triphenylamine, fluorescent tetraphenyl ethylene, and ionic conductive imidazole groups, exhibiting desired electrochemically-induced color and fluorescence change synchronously. A quasi-solid-state electrochromic/electrofluorochromic device based on EFIL-TTM exhibited desirable simultaneous reflective and emissive display behavior of low driving voltage (0.7 V), fast response speed (color: 0.8/1.1 s; fluorescence: 1.7/2.3 s), and outstanding cycling durability (color retention of 97 % and fluorescence retention of 94 % after 10,000 cycles). It was intriguing that an EFIL-TTM//BQ device without electrolyte salt could still exhibit acceptable reflective/emissive dual-modal display behavior. Considering its facile synthetic strategy, scalable assembled approach, and superior performance, this EFIL-TTM-based electrochemical device may provide another avenue for the synergetic improvement of reflective/emissive dual-modal display performance.

High-performance infrared photodetection beyond bandgap limitation based on surface plasmon resonance in sub-stoichiometry molybdenum oxide nanostructures

High-performance photodetectors in the near-infrared (NIR) regime are essential for many advanced applications, such as optical communication, intelligent driving, and imaging system. However, conventional photoconductive infrared detectors commonly suffer from slow response speed and narrow spectral response. Here, we demonstrate a high performance NIR photodetector based on plasmonic sub-stoichiometry molybdenum oxide (MoO3−x) nanostructures/graphene heterostructure. Empowered by surface plasmon resonance induced near-field enhancement in MoO3−x and the subsequent hot-electron injection (HEI), a fast response time (rise time ∼6.7 μs, decay time ∼12.5 μs), high responsivity (3.3 A/W), low noise equivalent power (∼4.9 pW/Hz1/2), as well as wide response range from visible light to NIR is obtained at room temperature. The weak carrier–phonon interaction in graphene prevents the relaxation of injected hot electrons and enables efficient electron extraction. The response speed is nearly four orders of magnitude improved compared with other graphene-based hybrid devices with similar device structures. Moreover, the interfacial HEI breaks the bandgap limits of molybdenum oxide and further extends the response spectrum of the device to conventional band (C-band) of optical communication. Our proposed device architecture offers new strategy for developing high-performance infrared photodetectors.

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed

AbstractDue to wavelength‐selective characteristics, the InGaN‐based photodetectors show bright prospects in visible light communication and fast imaging system. However, the application of InGaN photodetectors with simple structures is limited in the above field owing to the slow response speed. Herein, an ultrafast photodetector based on axial InN/InGaN nanorod array (NRA) heterojunction is prepared through a self‐catalytic high (930 °C) and low (400 °C) temperature two‐step growth method by molecular beam epitaxy (MBE). The performance of photodetectors is analyzed by semiconductor device analyzer, wavelength response system (consists with a xenon lamp and monochromator), and time response system (combined by an optical chopper, a laser, and a digital oscilloscope). The photodetectors present a fast response speed with a rise/full time of 18.2/24.7 µs. Further analyses reveal a responsivity of 9.27 A W−1 and a specific detectivity of 3.54 × 1010 Jones under −1 V bias. As a result, the axial NRA heterojunction photodetectors exhibit great potential for application in ultrafast photoelectric conversion systems and provide valuable guidance for realizing ultrafast photodetectors.

A new approach for broadband photosensing based on Ag2Se/Si heterojunction tuned by Pyro-phototronic effect

With its high carrier mobility and low effective mass characteristics, silver selenide (Ag2Se) emerges as an attractive candidate for use in optoelectronic devices. However, the relatively low responsivity, slow response speed, and need for a large external bias largely limit their practical applications. In this manuscript, a newly photodetector (PD) is fabricated based on the n-Ag2Se/p-Si heterojunction. It is observed that this PD exhibits a broadband response range of 405–1064 nm at zero bias, and the best responsivity (R) and detectivity (D) are obtained to be 3.04 mA/W and 1.67 × 1010 Jones at 1064 nm, respectively, demonstrating its great potential in high-performance self-powered near-infrared (NIR) PD. More importantly, the light-induced pyroelectric effect, which can be employed to modulate the photoelectric processes and improve the photoresponse, is found in the Ag2Se film due to the imperfect orthorhombic structure. When the Pyro-phototronic effect is introduced in the heterojunction, the R and D of the PD are significantly enhanced to 43.32 mA/W and 1.75 × 1011 Jones with an argument of 1425 % , respectively. An ultrafast response time of 64/62 μs is simultaneously achieved under the illumination of a 400 Hz-pulsed laser, the performances of which are much better than those of previously reported Ag2Se-based heterostructure PDs. Besides, the response range is broadened beyond the bandgap of the heterojunction to a near-infrared region of 1550 nm. This study provides a novel pyroelectric material-based self-powered broadband PD and also gives a great promise for designing high-performance infrared ultrafast PD based on the Pyro-phototronic effect.

Study on Single-Loop FCS-MPC for DC-Based DFIG System

Doubly fed induction generator (DFIG) system suffers from complex control structure, slow dynamic response speed and cumbersome parameter design due to its traditional cascaded dual-loop control strategy. A single-loop finite control set model predictive control (SLMPC) is proposed in the paper for DC-based DFIG in DC grid, which simplifies its control structure and parameter design, and enhances system dynamic response. There are three improved aspects. First, the single-loop control structure is proposed to eliminate intermediate link in dual-loop cascaded structure, and enhance system dynamic response. Second, system reduced-order discretization algorithm is proposed by differential and integral discretization method to reduce finite control set model predictive control strategy (FCS-MPC) design difficulty. Third, cost function with nonlinear additional current limiting function is designed to protect system from overcurrent effectively. Finally, the feasibility of proposed strategy is verified by simulations and experiments.

A High-Performance MoS2-Based Visible-Near-Infrared Photodetector from Gateless Photogating Effect Induced by Nickel Nanoparticles.

Recent advancements in two-dimensional materials have shown huge potential for optoelectronic applications. It is challenging to achieve highly effective and sensitive broadband photodetection based on MoS2 devices. Defect engineering, such as introducing vacancies, can narrow the bandgap and boost the separation of photogenerated carriers by defect states but leads to a slow response speed. Herein, we propose a nickel nanoparticle-induced gateless photogating effect with a unique energy band structure to enable the application of defect engineering and achieve high optoelectronic performance. The device based on Ni nanoparticle-decorated MoS2 with S vacancies exhibited high responsivities of 106.21 and 1.38 A W-1 and detectivities of 1.9×1012 and 8.9×109 Jones under 532 and 980 nm illumination (visible to near infrared), respectively, with highly accelerated response speed. This strategy provides new insight into optimizing defect engineering to design high-performance optoelectronic devices capable of broadband photodetection.

Unlocking the potential of organic-inorganic hybrids in microwave gas sensors: Rapid and selective NH3 sensing at room-temperature

Microwave gas sensor (MGS), being as a kind of new-developed sensing device, possesses the ability to resolve the poor stability, imprecise selectivity, slow response speed and other problems plaguing room-temperature gas sensors. However, the nature of gas sensing mechanism of MGS has not yet been revealed, and the sensitive materials currently applied on MGS are relatively unstable and insensitive under high humidity. Here we have for the first time reported a highly sensitive, selective, and stable MGS composed of ultra-narrowband microwave filter transducer and organic-inorganic hybrid sensitive material (multilayered structured polyaniline (PANI)-SnO2). Owing to the standout capacity of ammonia (NH3) adsorption, the high resistance to water poisoning, and the efficient tuning of relative permittivity ascribed to p-n (PANI-SnO2) heterojunction, the organic-inorganic hybrid based MGS operating at room-temperature can selectively detect low concentration of NH3 with high sensitivity, fast response speed, and anti-humidity capacity, which has never been reported before. This work develops a new class of microwave sensing functional materials, and demonstrates that the concept in tuning relative permittivity for constructing outstanding performance microwave gas sensor.

Fabrication a sensor based on sulfonate-based COF for humidity sensing

• ►Humidity sensor based on sulfonate-based COF is fabricated. • ►2D sulfonate-based COF possesses superior water adsorption capacity (∼396 mg/g). • ►COF’s 1D pore can provide continuous proton/ions conducting channel. Sensing material is crucial to the performance of humidity sensors. Porous material is widely used for humidity sensing but suffers from the narrow detecting range and slow response speed. Herein, the porous TpBDSA-Na COF with a large pore size (∼1.7 nm) and high density of hydrophilic active sites is used as sensing material for humidity detector. The superior adsorption capacity of water molecules (∼396 mg/g) in TpBDSA-Na COF makes the humidity detector exhibit fast response speed (18/9 s), small hysteresis (∼3% RH) and long-term stability (∼20 days) in 11%-95% RH range. Moreover, the sensing mechanism of TpBDSA-Na sensor is also discussed in detail. This research indicates the 2D COF with a hydrophilic channel can be used as a promising material for humidity sensing.