Quantum dots (QDs), semiconductor nanocrystals smaller than 10 nm, can have their energy gap (Eg) adjusted by size due to the quantum size effect. So far, binary chalcogenide QDs, such as CdSe and PbS, have been widely investigated for their applications to liquid crystal displays and light-emitting diodes (LEDs), because they exhibit sharp photoluminescence (PL) peak with high quantum yields (QYs) and the PL peak wavelength can be controllable with the QD size. However, the use of toxic heavy metals such as Cd and Pb in these QDs poses significant environmental and health risks. To address this, we have developed multinary QDs using less toxic materials, such as Ag-In-Ga-S (AIGS), which exhibit sharp band-edge emission tunable from 500 to 600 nm by adjusting the In/Ga ratio [1]. Surface coating with gallium sulfide (GaSx) shell enhanced the peak intensity of band-edge emission due to the removal of the surface defect sites. We also successfully prepared green-light-emitting QD-LEDs with the use of AIGS QDs [2]. In this study, we report the synthesis of blue-light emissive QDs with AgGaS2 semiconductor, the bulk Eg of which is 2.7 eV. The obtained QDs exhibited a band-edge PL peak with a narrow peak width. These AgGaS2 QDs have been successfully utilized in the fabrication of blue-light QD-LEDs.AgGaS2 QDs were synthesized by heating corresponding metal precursors and sulfur compounds in a mixture of oleylamine and 1-dodecanethiol. The resulting QDs were surface-coated with GaSx shell. TEM analysis revealed that spherical or polygonal nanoparticles with an average size of ca. 5 nm were formed. It was found from XRD measurements that the AgGaS2 QDs had a tetragonal crystal structure. Absorption spectra of AgGaS2 QDs were blue-shifted from ca. 460 nm to 450 nm with a decrease in the Ag/Ga ratio in the precursors. The obtained QDs exhibited a sharp band-edge PL peak at ca. 450 nm as well as a broader defect-site emission peak at longer wavelengths. The surface coating with GaSx shell to form core-shell-structured AgGaS2@GaSx QDs enhanced the band-edge PL peak, the peak width of which was 22nm. This was probably because the deposition of the GaSx shell eliminated surface defect sites acting as a non-radiative recombination site on AgGaS2 cores. QD-LEDs were fabricated with thus-obtained blue-emitting QDs as an electroluminescence layer. The resulting QD-LEDs exhibited a sharp electroluminescence peak at ca. 450 nm with an external quantum efficiency of 0.66%, demonstrating their potential in blue-light QD-LED applications.
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