Single-pole Double-throw Research Articles

A dual‐band polarization switchable antenna switch module for 5G new‐radio applications

SummaryIn this paper, a dual‐band antenna switch module with switching capability targeting the inter‐band carrier aggregation at 5G new‐radio (NR) frequency range 2 (FR2) is presented. Inter‐band carrier aggregation has become increasingly prevalent in millimeter‐wave applications at Ka‐band frequencies as a means to secure sufficient bandwidth for improving the rate of data transmission. Antenna modules with polarization switching capability are considered as a critical component for maintaining proper transmission and reception of the signals at millimeter‐wave frequencies. The integrated system consists of a wideband single‐pole‐double‐throw (SPDT) switch and a dual‐band power amplifier (PA) that are realized on the Rogers RO3010 substrate. With the two double exponentially tapered slot antennas (DETSA) arranged in the mutually orthogonal configuration, the antenna switch module can provide linear polarization at ±45 degrees. A measured error‐vector‐magnitude (EVM) of −30.3 dB at 38 GHz using 200‐MHz standard 5G NR 256‐QAM orthogonal frequency‐division multiplexing (OFDM) modulation has demonstrated the feasibility of the proposed module to be implemented for millimeter‐wave applications.

A High-Power and Broadband GaN SPDT MMIC Switch Using Gate-Optimized HEMTs

A high-power, broadband monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch is designed with gate-optimized high-electron-mobility transistors (HEMTs) using AlGaN/Gallium nitride (GaN) technology. The foot length of the gate is varied from 200 to 250 nm, and the head length is varied from 500 to 750 nm in the T-gate structure to optimize the radio frequency (RF) performance. The SPDT switch is designed in a series–shunt–shunt topology using gate topology as a design parameter. The switch has achieved an insertion loss better than 0.75 dB throughout the 3.5–13.5-GHz bandwidth. It can transmit 30-W output power at 0.1-dB compression point and handle 47.5-dBm input power at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{\textrm{1\,dB}}$</tex-math> </inline-formula> . The isolation is above 25 dB, and the return loss is better than 11 dB. With its low insertion and high power-handling capacity in broadband, the SPDT switch shows state-of-the-art performance for high-power communication systems and radar applications.

A Sub-GHz CMOS SPDT Antenna Switch Employing Linearity-Enhanced Biasing Strategy for Second-Order Harmonic Reduction

A CMOS single-pole double-throw (SPDT) antenna switch employing linearity-enhanced biasing strategy is proposed for the second-order harmonic (H2) reduction. It was implemented and demonstrated using a 0.28-lm thick-oxide MOSFET in 65-nm CMOS process. The NMOS transistor of the conventional antenna switch is replaced with the CMOS transistor composed of an NMOS and PMOS transistor in parallel to improve second-order harmonic distortion (HD2). The optimum channel width of an NMOS and PMOS transistor is chosen to achieve odd symmetry characteristic of I-V curve with respect to the drain-to-source voltage swing (VDS), and, as a result, enhance HD2 of the antenna switch. In addition, the linearity-enhanced biasing scheme is adopted to the PMOS transistor as a conventional negative biasing method of the NMOS transistor. This prevents the degradation of the power handling capability in adopting the PMOS transistor to the antenna switch. In the measurement, the proposed single-stack SPDT antenna switch shows an insertion loss of less than 0.6 dB and an isolation of greater than 38 dB from 100 MHz to 1 GHz with an input and output return loss of greater than 25 dB. Concerning for H2 and third-order harmonic (H3), it shows H2 of -65 dBm and H3 of -90 dBm at 150 MHz when a single-tone RF signal with a power of +5 dBm is applied. Compared to the conventional NMOS-based antenna switch, the proposed CMOS-based antenna switch improves HD2 by approximately 8 dB, 7 dB, and 1 dB at 150 MHz, 400 MHz, and 1 GHz, respectively, while maintaining the comparable insertion loss, isolation, and third-order harmonic distortion (HD3).

Spiral-Resonator-Based Frequency Reconfigurable Antenna Design for Sub-6 GHz Applications

This paper presents a novel frequency reconfigurable antenna design for sub-6 GHz applications, featuring a unique combination of antenna elements and control mechanisms. The antenna is composed of an outer split-ring resonator loaded with an inner spiral resonator, which can be adjusted through the remote control of PIN diode or Single Pole Double Throw (SPDT) switches. The compact antenna, measuring 22 × 16 × 1.6 mm3, operates in broadband, or tri-band mode depending on the ON/OFF states of switches. The frequency reconfigurability is achieved using two BAR64−02V PIN diodes or two CG2415M6 SPDT switches acting as RF switches. SPDT switches are controlled remotely via Arduino unit. Additionally, the antenna demonstrates an omni-directional radiation pattern, making it suitable for wireless communication systems. Experimental results on an FR-4 substrate validate the numerical calculations, confirming the antenna’s performance and superiority over existing alternatives in terms of compactness, wide operating frequency range, and cost-effectiveness. The proposed design holds significant potential for applications in Wi-Fi (IEEE 802.11 a/n/ac), Bluetooth (5 GHz), ISM (5 GHz), 3G (UMTS), 4G (LTE), wireless backhaul (4G and 5G networks), WLAN (IEEE 802.11 a/n/ac/ax), 5G NR n1 band, and Wi-Fi access points due to its small size and easy control mechanism. The antenna can be integrated into various devices, including access points, gateways, smartphones, and IoT kits. This novel frequency reconfigurable antenna design presents a valuable contribution to the field, paving the way for further advancements in wireless communication systems.

Design of BPF-Integrated SPDT Switch Based on Slotline Resonators Loaded With Diodes

Slotline Stepped-impedance resonators (SIR) loaded with p-i-n diodes are used to develop bandpass filter (BPF) integrated switches in this brief. The loaded diodes are used to switch the resonant conditions of the short-ended slotline resonators. The equations for their resonant conditions under different loads at different locations are derived and discussed. With these derived equations, the switchable filters are designed and synthesized using the classical coupled-resonator filter theory. The design concept is demonstrated by a Cascaded Quadruplet (CQ) BPFintegrated single-pole single-throw (SPST) switch at center frequency f0 = 1 GHz with with 47.7 dB OFF-state suppression (OSS). Finally, two compact BPF-integrated single-pole double-throw (SPDT) switches are designed and fabricated. One of them combines source-load (S-L) coupling and introduces two additional zeros outside the desired passband to improve the frequency selectivity. The other on fractal common feeding line is developed to reduce the impact of accumulated residual admittances from OFFstate channels, which shows high roll-off rate of sidebands as well as high port-to-port isolation of 53.1 dB, and its overall circuit size is only 0.051 λg2.

A W-Band SPDT Photoconductive Evanescent-Mode Waveguide Switch

This letter presents the design, fabrication, and measurement of a silicon micromachined photoconductive evanescent (EVA)-mode waveguide switch operating in a single-pole double-throw (SPDT) configuration. Two EVA-mode waveguides loaded with silicon posts are placed in a Y configuration with a common feeding waveguide. In the absence of photoexcitation, the dielectric posts and EVA channel exhibit a bandpass filter response that allows low-loss propagation of signals on the order of 2.0 dB at 96.7 GHz. When photoexcited, the low conductive posts and EVA channel yield a very high isolation of 36.5 dB up to 102.4 GHz within <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula> -band. The proposed design shows promise for 5G and 6G communication backhaul devices.

Measurement of Complex-Ratio Between Two RF Signals With Spectrum Analysis

A novel method to measure the amplitude-phase differences between two radio frequency (RF) signals is presented, based on spectrum analysis after periodic modulation. Two input signals are alternatively selected to enter the single-channel RF channel by a single-pole double-throw (SPDT) switch, which generates harmonics related to the channel unbalance. Amplitude-phase differences between two input signals can be obtained by analyzing the spectrum of received signal using discrete Fourier transform (DFT) in digital domain. Compared to conventional multichannel RF receivers, the proposed method has a concise structure and low-computational complexity. Simulation results are provided to verify its effectiveness over dynamic ranges of 60 dB and 360 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^\circ$</tex-math> </inline-formula> . A <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$L$</tex-math> </inline-formula> -band RF circuit is fabricated to measure the amplitude-phase differences over 35 dB and 360 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^\circ$</tex-math> </inline-formula> dynamic ranges. The measured results show good agreement to those by the vector network analyzer (VNA), certifying the effectiveness of proposed method.

X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology

This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 μm GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T/R switches are introduced to realize a fully GaN-based transmit/receive module (TRM), each of which achieves an insertion loss of 1.21 dB and 0.66 dB at 9 GHz, IP1dB higher than 46.3 dBm and 44.7 dBm, respectively. Therefore, it can substitute a lossy circulator and limiter used for a conventional GaAs receiver. A driving amplifier (DA), a high-power amplifier (HPA), and a robust low-noise amplifier (LNA) are also designed and verified for a low-cost X-band transmit-receive module (TRM). For the transmitting path, the implemented DA achieves a saturated output power (Psat) of 38.0 dBm and output 1-dB compression (OP1dB) of 25.84 dBm. The HPA reaches a Psat of 43.0 dBm and power-added efficiency (PAE) of 35.6%. For the receiving path, the fabricated LNA measures a small-signal gain of 34.9 dB and a noise figure of 2.56 dB, and it can endure higher than 38 dBm input power in the measurement. The presented GaN MMICs can be useful in implementing a cost-effective TRM for Active Electronically Scanned Array (AESA) radar systems at X-band.

A 28-GHz Four-Channel Beamforming Front-End IC With Dual-Vector Variable Gain Phase Shifters for 64-Element Phased Array Antenna Module

A 28-GHz fully differential four-channel beamforming front-end IC with variable gain phase shifters (VGPSs) is presented, of which orthogonal phase and gain control is achieved in a single block using the proposed dual-vector synthesis technique. This greatly reduces chip size, power consumption, and calibration complexity. The antenna switch embedded in the front-end matching network minimizes degradation of the transmitter (TX) efficiency and receiver (RX) noise figure. The multi-mode power amplifier (PA) with a built-in linearizer is presented to have high efficiency and linearity for all power modes, which reduces power consumption during gain control. Also, a differential four-way power divider and an single pole double throw (SPDT) switch are introduced in the common path, which has a small chip size and a low insertion loss. By adopting differential structures for all components in the four-channel IC, the effect of parasitic grounding inductances due to bonding and package is minimized. Thanks to the proposed dual-vector VGPS, the rms gain error of 0.21 dB and the peak phase variation of ±1.7° are achieved during phase control and gain control, respectively, without any calibration. The four-channel front-end IC also achieves rms phase error of only 1.4° during the simultaneous phase and gain control without any calibration. It has a TX OP1dB of 13.3 dBm and the highest linear output power of 7.2 dBm with 400-MHz 64-QAM fifth-generation (5G) new radio (NR) signals with 9.6-dB peak-to-average power ratio (PAPR). Also, this article presents a 64-element brick-type phased array antenna using four-channel core chips. It shows a high effective isotropic radiated power (EIRP) of 54.4 dBm at 28 GHz. An over-the-air link is demonstrated with a competitive data rate of 4 Gb/s using 64-QAM waveforms over all scan angles at a distance of 100 m.

High isolation and high power of 0.13 µm CMOS SPDT switch using deep‐N‐well transistors and floating‐body technique in K‐band

AbstractA K‐band high isolation single‐pole double‐throw (SPDT) switch using a 0.13 µm CMOS process is presented. Two on‐state resistors of shunt Deep‐N‐Well (DNW) transistors are used to improve isolation. The floating‐body technique is utilized to enhance the power‐handling capability. The off‐state capacitors of two DNW transistors are employed to construct an impedance‐matching network. The switch achieves a measured insertion loss of 3.0–3.2 dB and an isolation of better than 35 dB from 17 to 27 GHz. A measured input 1 dB compression power (IP1dB) of 11.8 dBm is obtained at 24 GHz. The chip size of the proposed switch is 0.52 × 0.66 mm2with a core area of only 0.33 × 0.27 mm2.

A Dual-Component Electric Probe Embedded With a 0°/180° Hybrid Coupler for Near-Field Scanning

In this article, a Ka -band dual-component electric probe is proposed in low temperature co-fired ceramic for near-field scanning, which consists of a sensing part of two symmetric L-shaped strips and a 0°/180° hybrid coupler. The responses to the tangential and normal electric components are outputted to the difference and sum ports without post-processing, to avoid the errors due to phase measurements at high frequencies. A grounded coplanar waveguide (GCPW) is used as a standard kit. Equations are derived carefully to take the imperfect terminations into account. To further improve the sensitivity and measurement efficiency, a low noise amplifier (LNA) and an absorptive single pole double throw (SPDT) switch are integrated with the probe. Simulated and measured results indicate that the probe can characterize the near electric field distributions within the band of 27.2–30 GHz, and the sensitivity of the active probe prototype is improved by 17–18 dB at 28 GHz when compared with the passive one. The passive probe prototype is utilized to scan the near electric field of an integrated transmitting front-end module at 28.5 GHz.

Wideband-Filtering Switches With Ultra-Wide Stopband Using P-I-N Diodes Loaded on Slotline

This paper presents a new design method for the microwave switch, which uses p-i-n diodes loaded on slotline. A single-pole single-throw (SPST) switch based on the microstrip-slotline-microstrip (M-S-M) transition with non-uniform loading structures is first designed to validate our design approach, which controls the on and off states of the switch by applying different voltages to the diodes. Then a single-pole double-throw (SPDT) switch using p-i-n diodes loaded on slotline T-junction is proposed, which achieves great high-pass response of ON-state channel and 20 dB OFF-state suppression (OSS) within dc to 4.64 GHz. To overcome the poor selectivity of two switches, transmission zeros need to be introduced to achieve band-pass response. Therefore, the slotline of the M-S-M transition is loaded with gradient length short stubs to bring in multiple transmission zeros and achieve SPST/SPDT wideband-filtering switches with ultra-wide stopband. Finally, the proposed filtering switches are fabricated and measured. The measurement results show that the SPDT filtering switch not only provides the expected band-pass response and wide stopband from 4 to 43.5 GHz of ON-state channel, but also has 22.8 dB rejection of OFF-state channel, and the 20.8 dB port-to-port isolation from dc to 43.5 GHz.

Beamwidth-Reconfigurable Circularly Polarized Slot Antenna Based on Half-Mode Substrate-Integrated Waveguide

Beamwidth-reconfigurable antennas are useful for the intersatellite link of low earth orbit formation flying and constellation, as they prevent unauthorized satellites from eavesdropping. In this article, a circularly polarized slot array antenna based on a half-mode substrate-integrated waveguide (HMSIW) for the K-band beamwidth reconfiguration is proposed using a new radio frequency (RF) switch structure and a pair of modified −45° and +45° linearly polarized HMSIW slot arrays for the dual operation of a single-pole double-throw (SPDT)/a power divider (PD) and easy integration with other components, respectively. The RF switch structure consists of a T-junction PD, λ/4 lines, and beam lead PIN diodes with current control resistors and without a DC block circuit for low DC power consumption and size reduction. The −45°/+45° linearly polarized HMSIW slot arrays providing linear and circular polarizations (LP and CP, respectively) are operated for CP. The use of a short-circuited termination instead of dissipative termination results in easier integration with other components because the 16 radiating slots consume most of the input power. The dimension of the beamwidth-reconfigurable antenna including the bottom metal layer is 157.2 × 23.3 × 0.254 mm3 (12.5λ0 × 1.86λ0 × 0.0202λ0). The RF switch for the SPDT shows the insertion losses of 1.8–2.3 and 16.7–24.2 dB and an isolation of 20.9–33.4 dB for both outputs within the 10-dB bandwidth. The RF switch for the PD has an insertion loss of 3.9–4.8 dB. The one- and two-antenna operation modes of the CP antenna provide the gains of 9.44 and 6.99 dBic, the axial ratios of 2.24 and 3.47 dB, and the horizontal beamwidths of 35.8° and 78.2°, respectively.

High-Powered RF SOI Switch With Fast Switching Time for TDD Mobile Applications

This paper presents a fast switching and high-powered single-pole double-throw (SPDT) switch for RF switch circuits, such as TRx antenna switches and frequency band (or operation mode) selection switches in mobile handset applications. For fast switching time and performances of the RF switch, we proposed a novel method that can “selectively” control the impedance of a gate biasing circuit (“high” or “low” impedance). The proposed SPDT switch use the low impedance of the gate biasing circuit for fast switching time and use the high impedance of the gate biasing circuit to avoid the degradation of the insertion loss and harmonics. The proposed SPDT switch has no additional bias and no large payment for size consumption. According to measurement results, the turn-on switching time of the proposed SPDT switch was <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.35~\mu \text{s}$ </tex-math></inline-formula> (at 2 GHz). The insertion loss, isolation, and return loss at 2 GHz were 0.16 dB, 47.1 dB, and 24 dB respectively. 2nd and 3rd harmonic levels at 25 dBm input power at 2 GHz were −88.7 dBm and −78.9 dBm, respectively. Power handling capability was 39.5 dBm of input power at 2 GHz. The designed SPDT switch was implemented in a 0.13- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> partially depleted silicon-on-insulator (PD-SOI) process.

An X-Band High-Accuracy GaAs Multifunction Chip With Amplitude and Phase Control

This paper presents a high-accuracy multifunction chip (MFC) with amplitude and phase control in X-band. The MFC is designed with a common leg structure and incorporates a 6-bit attenuator (ATT), a 6-bit phase shifter (PS), two gain compensation amplifiers (GCAs), three single pole double throw switches (SPDTs), and fourteen logic control circuits. The interstage matching networks (IMNs) are inserted to compensate for the insertion phase and attenuation changes from the design due to the mismatches occurring when cascading the separately designed PS and ATT blocks. The receive and transmit modes switching is achieved by using four SPDTs. In addition, the resistance feedback is used in GCAs to compensate for passive losses and provide gain to the MFC. The proposed MFC is fabricated in 0.15- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> GaAs pseudomorphic high-electron-mobility transistor (pHEMT) process. In the range of 8–11 GHz, the measured maximum root-mean-square (RMS) amplitude error of the MFC is less than 0.28 dB, and the maximum RMS phase error is less than 3.3°. Moreover, the MFC is achieved with a size of 4.3 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times2.85$ </tex-math></inline-formula> mm. Excellent performance and compact size make the MFC great potential in spaceborne phased array applications.

3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications

This article proposes a three-dimensional heterogenous-integrated (3DHI) switchable bandpass filter bank with two independent wideband filter channels that cover 26–40 GHz and 32.5–40 GHz, respectively. An accurate wafer-level process with a high hollowed ratio of the applied 8-inch high-resistivity-silicon (HR-Si) interposer wafers is presented to form both compact filter channels. Above the interdigital filter patterns fabricated on the bottom interposer wafer, deep cavities are etched in the cap interposer wafer to improve the quality factor of the filter bank. Besides the cavities, the cap interposer wafer is 35% hollow inside, which two bare dies of GaAs single-pole double-throw (SPDT) switches and two thin film resistors are attached to the bottom interposer after the wafer-to-wafer (W2W) bonding. To ensure good out-of-band performance, a 3D EM co-simulation of the switch layout at the chip level and filter patterns at the package level is applied. Measurement results show that the switchable filter bank achieves a high isolation of 50 dB and a competitive shape factor (BW30dB/BW3dB) of about 1.3. In addition, the size of the switchable filter bank is only 7.0 mm × 3.5 mm × 0.6 mm, and the weight is only 0.1 g.

Millimeter-Wave Beam Steerable Slot Array Antenna Using an Inter-Digitated Capacitor Based Corrugated SIW

A new class of electronically beam-steerable corrugated substrate integrated waveguide (CSIW) slot array antenna operating at 26–29 GHz has been developed. The conventional via-based walls of substrate integrated waveguides (SIWs) or stub-based walls of CSIWs have been replaced with an interdigitated capacitor (IDC) structure to enable reconfigurability. This novel IDC-CSIW is shown to have a lower transmission loss compared with conventional CSIWs in the literature. A new mathematical method has been described to calculate the cutoff frequency of IDC-CSIWs. The surface of the IDC-CSIW is then loaded with longitudinal slots, building a leaky-wave architecture. Radiation from individual slots is controlled by shorting the IDC at specific points using p-i-n diodes. The antenna is fed at either end using a single-pole–double-throw (SPDT) switch to achieve a 2-D reconfigurable beam. A compact switched array of two IDC-CSIWs is demonstrated to produce a continuous full sector coverage of 120° in the azimuth plane and ±15° in the elevation plane, providing a 2-D beam steer with a stable gain of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 13.5$ </tex-math></inline-formula> dBi and an efficiency greater than 80%.

Design of a K-Band High-Linearity Asymmetric SPDT CMOS Switch Using a Stacked Transistor

This study presents a high-linearity K - band single-pole double-throw (SPDT) switch with asymmetric topology in a 65-nm CMOS process for 5G applications. To simultaneously obtain high power-handling capability and high isolation in the Tx and Rx modes, respectively, we propose an SPDT switch using asymmetric topology and the stacked-transistor technique. In both the Tx/Rx modes, the proposed SPDT switch operates with an insertion loss of less than 2.1 dB and isolation better than 22.5 dB in the frequency range 20–25 GHz. At 22 GHz, the measurement results of the input 1-dB compression point (IP1 dB) are 32.5 and 4.7 dBm in Tx and Rx modes, respectively. The chip core size of the proposed SPDT switch is 0.03 mm2.

A Millimeter-Wave GaN MMIC Front End Module with 5G NR Performance Verification

This paper proposes a millimeter-wave (mmWave) 5G front end module (FEM) based on multiple gallium nitride (GaN) monolithic microwave integrated circuits (MMICs) with 5G new radio (NR) performance verification. The proposed structure is configured by a wide band GaN single-pole double-throw (SPDT) switch MMIC, a GaN low-noise amplifier (LNA) MMIC, and a GaN power amplifier (PA) MMIC with the target operation band from 26.5 GHz to 29.5 GHz. The LNA and PA MMICs are designed with 150 nm GaN/SiC technology, and the SPDT MMIC is designed with 100 nm GaN/Si. The LNA MMIC shows the measured noise figure less than or equal to 2.52 dB within the operation band. The PA MMIC is based on a two-stage configuration and shows about 35 dBm measured saturated power with power-added efficiency better than 34% within the operation band. Also, the SPDT MMIC is based on an artificial transmission line configuration for wideband performance and shows that the measured insertion loss is less than 1.6 dB, and the measured isolation is higher than 25 dB within the operation band. Furthermore, all MMICs are integrated within a single carrier as an FEM and successfully verified by 5G NR test signals.

A Wireless DC Motor Drive Using LCCC-CCL Compensated Network With Bidirectional Motion Capability

This paper proposes an LCCC and CCL compensated wireless servo motor control circuitry utilizing the merits of fundamental and third harmonic. With this circuitry, the motor side needs no additional power supply and controller, which significantly reduces the difficulty of maintenance. Besides, benefiting from the proposing of CCL compensating topology and utilizing of the self-driven circuitry, the secondary operates in fully resonant state and the motor direction control H-bridge is self-driven by the LC frequency selecting circuitry (FSC). Moreover, compared with the conventional motor control circuitry, because of the use of fundamental and third harmonic, the power equalization becomes significantly easier, and zero voltage switch (ZVS) can be realized at the same time; Besides, motion direction control of the motor is simpler with only a single pole double throw (SPDT) at the transmitter side. In addition, system resource consumption is reduced compared with conventional motor drive topologies. In this paper, an 180W prototype is built for experimental verification, and the result shows a good power equalization capability and a transfer efficiency reaching up to 90% at the distance of 10cm.