Plasma source ion implantation was used to prepare anatase type photocatalytic TiO 2 films on silicon wafer and quartz glass from titanium tetraisopropoxide as a precursor. RF power was used to produce a glow discharge plasma. High negative voltage pulses of −20 kV, repetition rate 100 Hz and 1 kHz were applied to the substrate holder to accelerate ions from the plasma. After the deposition, the films were annealed for 1 h in air at a constant temperature from 673 to 1023 K. The films were analyzed by XRD, XPS and Raman spectroscopy. The photocatalytic property of TiO 2 films was evaluated by examining the decomposition of an aqueous solution of methylene blue under UV irradiation. XPS and Raman results showed that the deposited films consisted of Ti, O and C and an amorphous carbon structure. The color of the films changed from black to colorless and transparent after annealing at a temperature above 723 K. XPS results showed that the composition of the films annealed at 873 K was stoichiometric TiO 2. The formation of a single phase anatase type TiO 2 crystalline was confirmed for the films annealed between 723 and 923 K by XRD and Raman measurements. The films annealed at 973 K were a mixture of anatase and rutile type crystals. The film annealed at 973 K had the highest photocatalytic activity for the decomposition of aqueous solution of methylene blue.