As an important II–VI semiconductor material, CdSe has attracted considerable attention due to its unique properties such as a direct band-gap ( 1.7 eV at room temperature) and excellent photoelectrical characteristics that make it a promising material for applications in photodetectors and photovoltaics. Thus far, 1D CdSe nanostructures, such as nanowires (NWs), nanotubes, nanosaws, nanosheets, and nanoribbons, have been successfully synthesized by using various methods including electrochemistry, solution chemical reactions, self-catalysis thermal evaporation, and laser ablation-assisted chemical vapor deposition (CVD). Besides their usage in single-electron transistors and electrochromic and charge-coupling devices, CdSe nanostructures also show application potential in biomolecular labeling, phosphors, and light-emitting diodes. Notably, photodetectors and field-effect transistors (FETs) based on a single CdSe nanoribbon have been recently realized. Nevertheless, the practical applications of CdSe nanostructures are hindered by poor materials properties, due mainly to lack of control over conductivity. Doping is an efficient approach to tune the electrical properties of semiconductors, and has been widely utilized in the semiconductor industry. Indeed, CdSe films and bulk crystals with tunable conductivity have been realized by using indium as n-type dopant. Doping of CdSe nanostruc-