Single Event Effect Rate Research Articles

Impact of Thermal and Intermediate Energy Neutrons on SRAM SEE Rates in the LHC Accelerator

This paper summarizes the main results related to the single event upset and single event latch-up cross section measurements performed at CHARM in a location with a strong contribution from thermal and intermediate energy neutrons. We introduce a new experimental procedure to unfold the thermal and high-energy hadron contributions to the single event effect rate in the mixed-field environment and benchmark the result against those obtained in standard test facilities, highlighting the possible implications on the state-of-the-art component qualification.

Extreme Atmospheric Radiation Environments and Single Event Effects

Data from ground-level radiation monitors and cosmogenic nuclides are combined to give a probability distribution for severe radiation events related to the well quantified event of February 23, 1956. Particle fluxes, single event effects rates, and dose rates are calculated for ground level and aerospace systems. The event of February 1956 would provide a challenge to air safety while more extreme events seen in historical records would challenge safety-critical ground systems. A new space weather hazard scale based on this event could be used to give rapid assessment of the radiation hazard using high-latitude neutron monitor data.

Incorporating Radiation Effects Into AE9/AP9

This paper describes a framework for incorporating linear radiation effects into the statistical machinery of the AE9/AP9 radiation climatology model software via “kernel” files. Users can provide their own kernels without modification of the software. Kernels can be applied to a variety of radiation effects such as proton single-event effect rate, internal charging current, ionizing dose, and nonionizing dose. Kernels can be generated for custom shielding geometry and materials and for custom parts or material susceptibilities.

Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test

Most classical approaches of single event effect rate prediction are based on the rectangular parallelepiped model of sensitive volume. However it is not clear about the number of sensitive volume in the device when predicting the in-flight single event latchup rate. As for memory device, there are two empirical practices to deal with the latchup sensitive volume number: one assumes that there is only one sensitive volume in the whole device; another assumes that there are as much sensitive volumes as the number of memory cells. The latchup sensitive volume number of a 4M-bits SRAM is determined as 63360 using pulsed laser mapping test in this work first. Based on the two assumed and measured sensitive volume number, the single event latchup rates of the device are calculated and compared. The results show that pulsed laser could be a powerful tool to obtain the real sensitive volume number in the device, which is significant for single event latchup rate prediction. The latchup rate will be either overestimated or underestimated with the assumption of the sensitive volume number as one or as much as the number of memory cells.

High Energy Electron-Induced Transients In a Shielded Focal Plane Array

Monte Carlo simulations demonstrate that electrons in a Europa-like radiation environment produce single events capable of depositing more than 100 keV in a shielded focal plane array (FPA). Aluminum shielding slows down high energy free space electrons through collisions. Incident electrons can also generate secondary particles within shielding through electromagnetic cascades, nuclear interactions, and other mechanisms. When incident electrons and secondary particles deposit energy in FPA pixels, the result is transient increases in background noise. We compare the energy deposition integral cross sections and estimate the single event effect rate for a range of electron energies incident upon an FPA shielded with 1, 5, and 10 cm of aluminum.

General Framework for Single Event Effects Rate Prediction in Microelectronics

A comprehensive mathematical framework is established that encompasses both Monte Carlo single event effects (SEE) rate prediction and analytical approximations based on a single rectangular parallelepiped (RPP). Criteria derived from consideration of multiple devices and technologies are presented that are useful in identifying situations where RPP-model predictions of SEE rates may not be appropriate and should be augmented or replaced by advanced physical modeling.

Model for Cumulative Solar Heavy Ion Energy and Linear Energy Transfer Spectra

A probabilistic model of cumulative solar heavy ion energy and LET spectra is developed for spacecraft design applications. Spectra are given as a function of confidence level, mission time period during solar maximum and shielding thickness. It is shown that long-term solar heavy ion fluxes exceed galactic cosmic ray fluxes during solar maximum for shielding levels of interest. Cumulative solar heavy ion fluences should therefore be accounted for in single event effects rate calculations and in the planning of space missions.

SEU rate calculation with GEANT4 (comparison with CREME 86)

This paper reports on single-event upset (SEU) rate calculations using the GEANT4 code. Single event effect rate modeling can be performed using various approaches. In this paper, we propose to compare the standard rectangular parallepiped (RPP) cosmic ray effects in microelectronic code (CREME86) model with our direct Monte Carlo simulation using the GEANT 4 (radiation transport code developed by CERN) software. The results obtained on two device types are in good agreement with CREME86.

Semiempirical Method for Predicting Single Event Effect Rates Due to Direct Ionization

A semiempirical method for predicting on-orbit single event effect rates has been developed. The derivation of this technique circumvents the need for assumptions regarding sensitive volume geometry, the use of the concept of effective linear energy transfer, and sensitive volumedimension input. Prediction results are compared to  ight data from the Cosmic Ray Upset Experiment, for which the presented method is shown to compare up to an order of magnitude more closely than previous methods when applied both to  ight-lot-speciŽ c and to generic ground test data. The utility of this method in performing trade studies also is demonstrated through an application of candidate microprocessors.

A new solar flare heavy ion model and its implementation through MACREE, an improved modeling tool to calculate single event effect rates in space

A new solar flare heavy ion model has been developed to support Space Station Single Event Effects (SEE) evaluations. It shows good agreement with previous flare data, and is implemented through an improved version of the CREME code.

Single event effects rate predictions in space

Computational methods for estimating single event error rates in space are reviewed. Single event effects are a source of error in spacecraft microelectronics caused by the passage of high-energy charged particles such as cosmic rays. These one- or few-bit errors may cause data loss or system malfunctions without any permanent damage to the device. Designers must be assured that errors fall below tolerable limits for their mission. Susceptibility of microelectronic devices is characterized by exposure to proton and heavy ion beams in laboratory facilities. The behavior of devices in space is generally estimated using computational models in conjunction with the accelerator data. Models of the space radiation environment include the CREME (cosmic ray effects on microelectronics) model of the galactic cosmic ray environment, the AP-8 trapped proton model, and various models of solar flare events. Radiation transport codes determine changes in the radiation environment after passage through the Earth's magnetic field and spacecraft structural materials. Semiconductor device models are used to convert particles fluxes into error rates.