Single-electron Transport Research Articles

Lattice-confined Ag over MnCoLDH accelerated catalytic oxidation of formaldehyde at ambient temperature: The novel pathway with different oxygen species

Catalytic oxidation of formaldehyde (HCHO) at ambient temperature represents a cost-effective and efficient strategy for indoor HCHO removal. Although precious metal-based catalysts have been considered practical for oxidizing gaseous HCHO indoors, the limited activity of Ag-based catalysts can be attributed to their typical +1 and 0 valence states, as well as their single electron transport pathway. This characteristic impedes the reestablishment of the low state during oxygen activation, thereby resulting in catalyst deactivation. The present study successfully incorporated Ag atoms into manganese-cobalt layered double hydroxide (MnCoLDH) through doping, resulting in the development of a catalyst that exhibited complete formaldehyde oxidation activity at 30 °C. Lattice-confined Ag enables continuous activation of oxygen, while LDH facilitates the sustained provision of surface hydroxyl groups. The roles and mechanisms of surface hydroxyl groups, adsorbed oxygen, and lattice oxygen in the oxidation of formaldehyde were investigated using in-situ DRIFTS. By comparing Ag with the impregnation method, the confinement of Ag within the lattice enables continuous activation of oxygen. This study presents a viable strategy for designing efficient catalysts for volatile organic compounds (VOCs) removal by utilizing active lattice oxygen species.

Single-electron transport in H2O@C60 single-molecule transistors

Single-molecule transistors (SMTs) based on fullerenes and their derivatives have been recognized as a long-sought platform for studying the single-electron transport properties. H2O@C60 is a combination of fullerene and H2O, a typical light molecule. Here we use the ‘molecular surgery’ technique to synthesize the H2O@C60 molecule and then construct the H2O@C60 SMTs, together with the C60 SMTs. Evidences for single-electron transport have been obtained in our measurements, including explicit Coulomb blockade and Coulomb oscillations. We then calculate the detailed parameters of the H2O@C60 and C60 SMTs using a capacitance model derived from the Coulomb diamond feature, which gives a capacitance ratio of 1:5.05:8.52 for the H2O@C60 SMT and 1:29.5:74.8 for the C60 SMT. Moreover, the gate efficiency factor α turns out to be 0.0686 in the H2O@C60 SMT, about ten times larger than that in the C60 SMT. We propose that the enhanced gate efficiency in H2O@C60 SMT may be induced by the closer attachment of molecular orbital electron clouds to the gate substrate due to polarization effects of H2O.

Single-Electron Transport and Detection of Graphene Quantum Dots

The integrated structure of graphene single-electron transistor and nanostrip electrometer was prepared using the semiconductor fabrication process. Through the electrical performance test of the large sample number, qualified devices were selected from low-yield samples, which exhibited an obvious Coulomb blockade effect. The results show that the device can deplete the electrons in the quantum dot structure at low temperatures, thus, accurately controlling the number of electrons captured by the quantum dot. At the same time, the nanostrip electrometer coupled with the quantum dot can be used to detect the quantum dot signal, that is, the change in the number of electrons in the quantum dot, because of its quantized conductivity characteristics.

Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit

To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, were introduced into Si wafers. Group II impurity Zn and group VI impurities S and Se, which are known to form deep levels, were introduced into the Si substrates by ion implantation. These samples were analyzed for concentration-depth profiles, energy level depths, and absence of defects. To introduce deep impurities into thin channels such as 50 nm thick Si, we found impurity introduction conditions such that the concentration depth profiles had maximum values at less than 50 nm from the Si surface. Then, the formation of the deep levels and absence of defects were experimentally examined. Using the conditions to introduce deep impurities into the Si wafer obtained from the experiments, single-electron transport at room temperature, high-temperature operation of qubit, and room-temperature quantum magnetic sensors are promising.

Counting statistics of single electron transport in bilayer graphene quantum dots

We measure telegraph noise of current fluctuations in an electrostatically defined quantum dot in bilayer graphene by real-time detection of single electron tunneling with a capacitively coupled neighboring quantum dot. Suppression of the second and third cumulant (related to shot noise) in a tunable graphene quantum dot is demonstrated experimentally. With this method we demonstrate the ability to measure very low current and noise levels. Furthermore, we use this method to investigate the first spin excited state, an essential prerequisite to measure spin relaxation.

Квантовая проводимость в одиночных и связанных квантово-размерных частицах узкозонных полупроводников

An organo-modified ordered layered structure with three-dimensional close packing based on colloidal quantum-sized particles (QP) of InSb, PbS, CdSe semiconductors and Langmuir-Blodgett films has been fabricated and studied. According to the current-voltage characteristics (CVC) of single-electron transport in the model of a nanocell with a linear chain QP across the layers, the processes limiting conductivity were established: emission-injection tunneling from a probe into a nanoparticle, motion in a nanoparticle determined by the establishment of an electronic wave process in it, and tunneling through a nanogap between nanoparticles. Quasi-periodic oscillations of the current and resonant peaks of quantum conductivity are observed on the I–V characteristics, which were estimated in the quantum wire model. For an even number of layers (QP, 2, or 4), the I–V characteristics were used to determine the attenuation of size quantization and the decrease in current due to the weak interaction of nanoparticles. With an odd number (3 or 5), the nanochain acts as a single quantum thread with manifestations on the CVC similar to the cases of one QP. In this case, the motion of an electron can be considered as a one-electron charge wave.

Passivation and energy-level change of the SnO2 electron transport layer by reactive titania for perovskite solar cells

Reactive anatase titania (TAc) are incorporated into SnO2 to form a single TAc-SnO2 electron transport layer (ETL) for mixed-cation perovskite solar cells (PSCs). The TAc-SnO2 layer is prepared in a low-temperature process by the advantage of high crystallinity and surface reactivity of TAc. The influence and mechanism of the TAc incorporation on the photovoltaic performance of PSCs are investigated. The TAc-SnO2 ETL presents rapid electron transfer, low trap density, high charge recombination resistance, low hysteresis and good stability. The 2.5-wt% TAc incorporation reveals the highest power conversion efficiency of 20.12 %, a 19 %-fold enhancement compared to the pristine cell with the SnO2 ETL. The enhancement arises from the fact that the TAc can fill up breaching in the pristine SnO2 layer and adjust the ETL energy level. The carboxyl groups of TAc facilitate the formation of solid bonding among SnO2/TAc colloids and prevent ions from accumulation at the interface of ETL/perovskite. The work provides a facile way to fabricate a low-temperature, single-layer and effective ETL for highly efficient PSCs.

Generation of a Single-Cycle Acoustic Pulse: A Scalable Solution for Transport in Single-Electron Circuits

The synthesis of single-cycle, compressed optical and microwave pulses sparked novel areas of fundamental research. In the field of acoustics, however, such a generation has not been introduced yet. For numerous applications, the large spatial extent of surface acoustic waves (SAW) causes unwanted perturbations and limits the accuracy of physical manipulations. Particularly, this restriction applies to SAW-driven quantum experiments with single flying electrons, where extra modulation renders the exact position of the transported electron ambiguous and leads to undesired spin mixing. Here, we address this challenge by demonstrating single-shot chirp synthesis of a strongly compressed acoustic pulse. Employing this solitary SAW pulse to transport a single electron between distant quantum dots with an efficiency exceeding 99%, we show that chirp synthesis is competitive with regular transduction approaches. Performing a time-resolved investigation of the SAW-driven sending process, we outline the potential of the chirped SAW pulse to synchronize single-electron transport from many quantum-dot sources. By superimposing multiple pulses, we further point out the capability of chirp synthesis to generate arbitrary acoustic waveforms tailorable to a variety of (opto)nanomechanical applications. Our results shift the paradigm of compressed pulses to the field of acoustic phonons and pave the way for a SAW-driven platform of single-electron transport that is precise, synchronized, and scalable.

Transport, refraction, and interface arcs in junctions of Weyl semimetals

We study the low-energy single-electron transport across a junction of two magnetic Weyl semimetals, in which the anisotropy axes are tilted one respect to the other. Using a two-band model with a potential step, we compute the transmission factor for normal and Klein tunneling and the refraction properties of the interface as a function of the tilt angle. We show that the interface acts as a beam splitter, separating electrons with different chiralities. We also characterize interface states, only appearing for finite tilt angle, which connect the projection of the Fermi surfaces on the two sides of the junction, and we discuss transport effects due to their interplay with Fermi arcs.

Effect of elastic disorder on single-electron transport through a buckled nanotube

We study transport properties of a single electron transistor based on elastic nanotube. Assuming that an external compressive force is applied to the nanotube, we focus on the vicinity of the Euler buckling instability. We demonstrate that in this regime the transport through the transistor is extremely sensitive to elastic disorder. In particular, built-in curvature (random or regular) leads to the ``elastic curvature blockade'': appearance of threshold bias voltage in the $I$-$V$ curve which can be larger than the Coulomb-blockade-induced one. In the case of a random curvature, an additional plateau in dependence of the average current on a bias voltage appears.

An electron turnstile for frequency-to-power conversion.

Single-electron transport relates an operation frequency f to the emitted current I through the electron charge e as I = ef (refs. 1-5). Similarly, direct frequency-to-power conversion (FPC) links both quantities through a known energy. FPC is a natural candidate for a power standard resorting to the most basic definition of the watt: energy emitted per unit of time. The energy is traceable to Planck's constant and the time is in turn traceable to the unperturbed ground state hyperfine transition frequency of the caesium 133 atom. Hence, FPC comprises a simple and elegant way to realize the watt6. In this spirit, single-photon emission7,8 and detection9 at known rates have been proposed as radiometric standards and experimentally realized10-14. However, power standards are so far only traceable to electrical units, that is, to the volt and the ohm6,15-17. In this Letter, we demonstrate an alternative proposal based on solid-state direct FPC using a hybrid single-electron transistor (SET). The SET injects n (integer) quasi-particles (QPs) per cycle into the two superconducting leads with discrete energies close to their superconducting gap Δ, even at zero source-drain voltage. Furthermore, the application of a bias voltage can vary the distribution of the power among the two leads, allowing for an almost equal power injection nΔf into the two. While in single-electron transport current is related to a fixed universal constant (e), in our approach Δ is a material-dependent quantity. We estimate that under optimized conditions errors can be well below 1%.

Development of Electrical Quantities Primary Standards

The developments of primary standards for electrical quantities that practically realize the electrical units such as ampere (A), volt (V), ohm (Ω), and farad (F) are introduced in this manuscript. These quantities are achieved in consistency with their definitions. According to the new definition of ampere, current can be realized directly such as single electron transport (SET) pump or indirectly using Ohm’s law. For the SET pump, developments are ongoing as trials to obtain higher current values with lower associated uncertainty to be suitable for metrological applications. With the discoveries of the Effects of Josephson and quantum Hall, it has become possible to consider quantum electrical standards that relate the volt and ohm units to h and e through the Josephson and the von Klitzing constants, respectively. The dc programmable Josephson standard was developed to overcome the problems of conventional standards such as stability and noise immunity with lower cost. Developments are continuing on ac Josephson standards to improve performance and increase output voltages and frequencies. For ac voltage measurements for voltages up to 1000 V, thermal voltage converters are introduced to extend the traceability for measuring the ac voltages in the frequency range from 10 Hz to 100 MHz where quantum-based ac standards still have limitations. Thermal current converters are used as the most accurate and precise standard for measurement of ac currents. The realization of ohm is done by the quantum Hall effect through a quantum Hall resistance (QHR) standard. Developments are occurring to make it simpler, more precise and accurate. The efforts that have been made to increase the values of the resistance quantum hall standard to disseminate its accuracy to other standard resistors to help in industry are also introduced. The farad is practically achieved by the calculable cross-capacitor. The calculable capacitor acts as the ac impedance primary standard because it can transfer the traceability to other impedances by using bridges such as the quadrature bridge. The development is occurring on its displacement sensing system to allow greater accuracy.

Observation of Single-Electron Transport and Charging on Individual Point Defects in Atomically Thin WSe2

Observation of Single-Electron Transport and Charging on Individual Point Defects in Atomically Thin WSe₂

Mechanical Resonator Linearly Coupled to a Normal State Single Electron Transistor and Electron Transport in Mescoscopic Conductor

Mechanical Resonator Linearly Coupled to a Normal State Single Electron Transistor and Electron Transport in Mescoscopic Conductor

Conformation-dependent charge transport through short peptides.

We report on charge transport across single short peptides using the Mechanically Controlled Break Junction (MCBJ) method. We record thousands of electron transport events across single-molecule junctions and with an unsupervised machine learning algorithm, we identify several classes of traces with multifarious conductance values that may correspond to different peptide conformations. Data analysis shows that very short peptides, which are more rigid, show conductance plateaus at low conductance values of about 10-3G0 and below, with G0 being the conductance quantum, whereas slightly longer, more flexible peptides also show plateaus at higher values. Fully stretched peptide chains exhibit conductance values that are of the same order as that of alkane chains of similar length. The measurements show that in the case of short peptides, different compositions and molecular lengths offer a wide range of junction conformations. Such information is crucial to understand mechanism(s) of charge transport in and across peptide-based biomolecules.

Exploration of electron transport behaviour of a push-push anil for possible application as an optical material

Abstract The present work delineates the relationship between the structural and spectral parameters of an anil, salicylidene-orthochloroaniline through the determination of its optimized structure, and consequential theoretical parameters using Density Functional Theory (B3LYP/6-311G (d, p) level) and spectral characteristics through UV–visible studies. The time-dependent DFT was used to calculate the theoretical UV–visible spectra and compared with the experimental spectra. The different frontier molecular orbitals and their energy gaps were elucidated and correlated with the experimentally determined values. Cyclic voltammetry confirmed the electron transport characteristics of the molecule. The anil followed a single electron transport process, which is irreversible, and diffusion-controlled. The overall study indicated that the anil could be suitably exploited as an optical material for electronic devices.

Visualizing nonlinear resonance in nanomechanical systems via single-electron tunneling

Numerous reports have elucidated the importance of mechanical resonators comprising quantum-dot-embedded carbon nanotubes (CNTs) for studying the effects of single-electron transport. However, there is a need to investigate the single-electron transport that drives a large amplitude into a nonlinear regime. Herein, a CNT hybrid device has been investigated, which comprises a gate-defined quantum dot that is embedded into a mechanical resonator under strong actuation conditions. The Coulomb peak positions synchronously oscillate with the mechanical vibrations, enabling a single-electron “chopper” mode. Conversely, the vibration amplitude of the CNT versus its frequency can be directly visualized via detecting the time-averaged single-electron tunneling current. To understand this phenomenon, a general formula is derived for this time-averaged single-electron tunneling current, which agrees well with the experimental results. By using this visualization method, a variety of nonlinear motions of a CNT mechanical oscillator have been directly recorded, such as Duffing nonlinearity, parametric resonance, and double-, fractional-, mixed- frequency excitations. This approach opens up burgeoning opportunities for investigating and understanding the nonlinear motion of a nanomechanical system and its interactions with electron transport in quantum regimes.

A Gd@C82 single-molecule electret.

Electrets are dielectric materials that have a quasi-permanent dipole polarization. A single-molecule electret is a long-sought-after nanoscale component because it can lead to miniaturized non-volatile memory storage devices. The signature of a single-molecule electret is the switching between two electric dipole states by an external electric field. The existence of these electrets has remained controversial because of the poor electric dipole stability in single molecules. Here we report the observation of a gate-controlled switching between two electronic states in Gd@C82. The encapsulated Gd atom forms a charged centre that sets up two single-electron transport channels. A gate voltage of ±11 V (corresponding to a coercive field of ~50 mV Å-1) switches the system between the two transport channels with a ferroelectricity-like hysteresis loop. Using density functional theory, we assign the two states to two different permanent electrical dipole orientations generated from the Gd atom being trapped at two different sites inside the C82 cage. The two dipole states are separated by a transition energy barrier of 11 meV. The conductance switching is then attributed to the electric-field-driven reorientation of the individual dipole, as the coercive field provides the necessary energy to overcome the transition barrier.

Single-Electron Transport in Colloidal Quantum Dots of Narrow-Gap Semiconductors

Single-electron transport in a planar structure of InSb, PbS, and CdSe semiconductor colloidal quantum dots has been studied by scanning tunneling microscopy. Current dips similar to the Coulomb gap have been observed in the I–V characteristics. The qualitative and numerical comparative estimates suggest that a structure consisting of a set of quantum dots exhibits single-electron transport and a phenomenon similar to the Coulomb blockade. The white light illumination of the sample during the measurements of the I–V characteristics breaks the Coulomb blockade and one can expect that a device element based on such a structure will respond to individual photons. In the Coulomb gap region, current oscillations at terahertz frequencies can occur.

A Multi-Electrode System for the Implementation of Solid-State Quantum Devices Based on a Disordered System of Dopant Atoms in Silicon

In this work, we present a nanoscale solid state structure, which is a 3D-array of tunnel-coupled arsenic dopants in silicon with a system of metallic electrodes leading to them. The structures of eight metal electrodes were fabricated on the inhomogeneously in depth doped with arsenic silicon surface, four of which converge to a region 50 nm in diameter, and four to a region of 200 nm. After removal of a thin highly conducting upper silicon layer, single-electron transport in an array (reservoir) of arsenic impurity atoms located between the electrodes is demonstrated. The Coulomb blockade was $${\sim}100$$ mV at a temperature of 4.2 K. The proposed structure can be used as a reservoir neural network, where single impurity atoms act as neurons, and electrodes will act as input and output terminals of the device, and also be used to configure the neural network. The operating temperature of such devices can be significantly increased due to the relatively small effective size of impurity arsenic atoms in silicon (3–5 nm).