Abstract
We study transport properties of a single electron transistor based on elastic nanotube. Assuming that an external compressive force is applied to the nanotube, we focus on the vicinity of the Euler buckling instability. We demonstrate that in this regime the transport through the transistor is extremely sensitive to elastic disorder. In particular, built-in curvature (random or regular) leads to the ``elastic curvature blockade'': appearance of threshold bias voltage in the $I$-$V$ curve which can be larger than the Coulomb-blockade-induced one. In the case of a random curvature, an additional plateau in dependence of the average current on a bias voltage appears.
Highlights
A global trend of modern electronics is the design of nanodevices with ultra-low power consumption and a high level of integration
We demonstrate that in this regime the transport through the transistor is extremely sensitive to elastic disorder
When suspended elastic nanotube is used as a single-electron transistor (SET) island, coupling between mechanical and charge degrees of freedom provides an additional control via mechanical forces
Summary
A global trend of modern electronics is the design of nanodevices with ultra-low power consumption and a high level of integration. When suspended elastic nanotube is used as a SET island, coupling between mechanical and charge degrees of freedom provides an additional control via mechanical forces This coupling can be strongly increased by applying a compressive force driving the nanotube towards the Euler buckling instability [26,27] (see more recent experimental [28–36] and theoretical [16–18,37–44] studies of this instability). [16–18] for a clean nanomechanical SET are strongly modified in the presence of such curvature As we shall demonstrate below, one can construct an analytic solution near buckling instability
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