Single-electron Transport Research Articles

Coherent transport through a Majorana island in an Aharonov\u2013Bohm interferometer

Majorana zero modes are leading candidates for topological quantum computation due to non-local qubit encoding and non-abelian exchange statistics. Spatially separated Majorana modes are expected to allow phase-coherent single-electron transport through a topological superconducting island via a mechanism referred to as teleportation. Here we experimentally investigate such a system by patterning an elongated epitaxial InAs-Al island embedded in an Aharonov-Bohm interferometer. With increasing parallel magnetic field, a discrete sub-gap state in the island is lowered to zero energy yielding persistent 1e-periodic Coulomb blockade conductance peaks (e is the elementary charge). In this condition, conductance through the interferometer is observed to oscillate in a perpendicular magnetic field with a flux period of h/e (h is Planck’s constant), indicating coherent transport of single electrons through the islands, a signature of electron teleportation via Majorana modes.

Ultrasensitive Photoresponse of Graphene Quantum Dots in the Coulomb Blockade Regime to THz Radiation.

Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime, i.e., single electron transport regime, remains unexplored. Here, we demonstrate the ultrasensitive photoresponse to THz radiation (from <0.1 to 10 THz) of a hBN-encapsulated GQD in the Coulomb blockade regime at low temperature (170 mK). We show that THz radiation of ∼10 pW provides a photocurrent response in the nanoampere range, resulting from a renormalization of the chemical potential of the GQD of ∼0.15 meV. We attribute this photoresponse to an interfacial photogating effect. Furthermore, our analysis reveals the absence of thermal effects, opening new directions in the study of coherent quantum effects at THz frequencies in GQDs.

Study the metal-insulator transitions of bilayer graphene: Abelian group schemes approach

Abstract Bilayer graphene (BLG), as a two-dimensional crystalline form of carbon, with a controllable band gap, has been proposed as an alternative to graphene for nanoscale electronics. Through modeling single-electron transport in BLG, using Abelian group schemes Z m × Z m as a novel approach, the present paper has numerically studied metal-insulator transition using random matrix theory in doped AA-stacking BLG. In this mathematical technique, initially, Abelian group schemes and the underlying graph of honeycomb periodic lattice of the single-layer graphene were constructed. Then, the tight-binding Hamiltonian matrix of this layer was represented by the adjacency matrices of the graph. Through using these matrices, it is possible to generate m-dimensional Bose-Mesner algebra. Finally, by applying the wreath product of these matrices, the Hamiltonian was calculated. In fact, instead of the hopping integral between individual layers, the mathematical combination of their underlying graphs was considered. This would be generalized to more than two layers. Numerical results indicated that insulator to metal transition occurred at the threshold doping value C = 0.5 % , which has already been achieved. After this threshold value, by increasing doping, a fast quantum chaotic transition from Poisson to Wigner energy-level statistic distribution was observed. The paper has suggested that a sufficient difference in the concentration of dopant atoms at individual layers would be an efficient way of controlling metal-insulator transitions.

Single-Carrier Transport in Graphene/hBN Superlattices.

Graphene/hexagonal boron nitride (hBN) moiré superlattices have attracted interest for use in the study of many-body effects and fractal physics in Dirac fermion systems. Many exotic transport properties have been intensively examined in such superlattices, but previous studies have not focused on single-carrier transport. The investigation of the single-carrier behavior in these superlattices would lead to an understanding of the transition of single-particle/correlated phenomena. Here, we show the single-carrier transport in a high-quality bilayer graphene/hBN superlattice-based quantum dot device. We demonstrate remarkable device controllability in the energy range near the charge neutrality point (CNP) and the hole-side satellite point. Under a perpendicular magnetic field, Coulomb oscillations disappear near the CNP, which could be a signature of the crossover between Coulomb blockade and quantum Hall regimes. Our results pave the way for exploring the relationship of single-electron transport and fractal quantum Hall effects with correlated phenomena in two-dimensional quantum materials.

Single-photon emission from single-electron transport in a SAW-driven lateral light-emitting diode

The long-distance quantum transfer between electron-spin qubits in semiconductors is important for realising large-scale quantum computing circuits. Electron-spin to photon-polarisation conversion is a promising technology for achieving free-space or fibre-coupled quantum transfer. In this work, using only regular lithography techniques on a conventional 15 nm GaAs quantum well, we demonstrate acoustically-driven generation of single photons from single electrons, without the need for a self-assembled quantum dot. In this device, a single electron is carried in a potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single optical photon within 100 ps. This SAW-driven electroluminescence, without optimisation, yields photon antibunching with g(2)(0) = 0.39 ± 0.05 in the single-electron limit (g(2)(0) = 0.63 ± 0.03 in the raw histogram). Our work marks the first step towards electron-to-photon (spin-to-polarisation) qubit conversion for scaleable quantum computing architectures.

Fabrication and characterization of quantum dot devices based on tetralayer graphene/hexagonal boron nitride heterostructures

We report on low temperature carrier transport property of quantum dot (QD) devices based on hexagonal boron nitride-encapsulated tetralayer graphene heterostructures. In the device with single dot geometry, we demonstrate a stochastic Coulomb blockade, suggesting formation of multiple dots coupled each other in series/parallel. Under a perpendicular magnetic field, the overlapping Coulomb diamonds are lifted at zero bias voltage and the charging energy is decreased. These imply the suppression of multiple dots behavior. Our results pave a way toward the investigation of interlayer correlation on single electron transport in few-layer graphene QDs.

Одноэлектронный транспорт в коллоидных квантовых точках узкозонных полупроводников

Single-electron transport in the planar structure of colloidal quantum dots of InSb, PbS, CdSe semiconductors was studied using a scanning tunneling microscope. On the current – ​​voltage characteristics, sections of the current dip were observed similar to the Coulomb gap. Qualitative and numerical comparative estimates suggest that one-electron transport and a phenomenon similar to the Coulomb blockade are observed in the structure of the set of quantum dots. When measuring the current-voltage characteristics, the white-light illumination of the sample breaks the Coulomb blockade, and it can be expected that an instrument element based on such a structure will respond to individual photons. In the region of the Coulomb gap, current oscillations with frequencies in the terahertz range are possible.

Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor**Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503).

We investigated single-electron tunneling through single and coupling dopant-induced quantum dots (QDs) in silicon junctionless nanowire transistor (JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature.

Comparison of Multiple Methods for Obtaining P$\Omega$ Resistances With Low Uncertainties

Capabilities for high resistance determinations are essential for calibration of currents below 1 pA, as typically requested in several applications, including semiconductor device characterization, single electron transport, and ion beam technologies. This need to calibrate low currents warrants the expansion of accessible values of high resistance. We present several methods for measuring resistances on the PΩ scale, namely potentiometry, dual source bridge measurements, and teraohmmeter usage, all of which are subsequently compared to theoretical calculations. These methods were used to measure four 1 PΩ resistances, one 10 PΩ resistance, and one 100 PΩ resistance, all generated by wye-delta networks containing three resistance elements. The differences between the experimentally obtained values and the theoretical values typically agree within 1 % for 1 PΩ, 10 PΩ and 100 PΩ resistances and the measurement uncertainties for the three techniques were estimated to be between 0.4 % to 4.8 % for 1 PΩ, 2.8 % to 5.6 % for 10 PΩ, and 4.4 % to 10.2 % for 100 PΩ.

Discrete quantum levels and Zeeman splitting in ultra-thin gold-nanowire quantum dots

We fabricate ultrathin gold nanowires (AuNWs) by means of a wet-chemical synthesis involving a reduction reaction. Our low-temperature transport measurements reveal the presence of the Coulomb-blockade effect and the formation of discrete quantum levels in an individual AuNW. We also observe the Zeeman splitting of the quantum levels in AuNW quantum dots under the application of magnetic fields via single-electron transport measurements using excitation spectroscopy. Our experimental results indicate that spin–orbit coupling strongly suppresses the estimated g-factor.

Exploring low-temperature processed a-WOx/SnO2 hybrid electron transporting layer for perovskite solar cells with efficiency >20.5%

Interfacial engineering strategy between the perovskite absorber and the charge transport layer play a vital role in highly efficient perovskite solar cells. Here, we propose an amorphous tungsten oxides/tin dioxide hybrid electron transport layer to effectively block holes through the pinholes and cracks of tin dioxide to indium tin oxide, resulting in promoting charge extraction and hindering electron-hole recombination process at the hetero-interface. Moreover, owing to the higher mobility of amorphous tungsten oxides and formation of cascade energy level sequence between amorphous tungsten oxides and tin dioxide, better electron transport is obtained compared with the traditional electron transport layer. The PSCs based on amorphous tungsten oxides/tin dioxide hybrid electron transport layer shows a better power conversion efficiency of 20.52% than the single tin dioxide electron transport layer. This study guides design strategies of the electron transport layer to enhance the efficiency of the perovskite solar cells by interfacial engineering. Moreover, the entire devices preparation process are finished at a temperature below 150 °C, promising great potential for the practical use in monolithic tandem devices and providing an avenue for the progress of flexible device.

Anti-ohmic single molecule electron transport: is it feasible?

Hitherto, only molecular wires with a regular ohmic behavior in which the electric conductance decreases with the wire length have been synthesized. Implementation of molecular conductors with reversed conductance/length trend (anti-ohmic) might revolutionize the field of molecular electronics, allowing the development of electronic devices with extraordinary properties. It is for this reason that, recently, theoretical efforts have been focused on this topic and different structures have been proposed to show reversed conductance/length behavior on the basis of density functional theory non-equilibrium Green function approach (DFT-NEGF) and topological models. From the previous works, it can be stated that an anti-ohmic molecular wire must display a very small HOMO–LUMO gap and a reversed bond alternation pattern in the case of polyenes and related conjugated systems. In this work, the pursuit of a mechanism by which the anti-ohmic electron transport may arise was carried out by studying the paradigmatic anti-ohmic p-xylylene chain (pX2) at the DFT level in combination with topological models. It has been found that the electron transport in the anti-ohmic regime is favored by a long-range superexchange mechanism, which, contrary to what is expected, is reinforced by the increase in the length of the chain. Moreover, strong links between anti-ohmic character in molecular wires and one-dimensional topological insulator models have been established. Due to the small HOMO–LUMO gap predicted at DFT level, the anti-ohmic character has been put to the proof using a multireference scenario. Preliminary results point out to the presence of different ohmic and anti-ohmic electronic states. In the particular case of pX2 the anti-ohmic states do not correspond to the ground state. These findings require a reconsideration of previous studies on the reversed conductance/length behavior using single reference methodologies.

Nanomagnetic Particle-Based Information Processing

Understanding the physics of spintronic devices in the 3-nm size range can pave the way to next-generation energy-efficient information processing devices. To build a spin computer, a layer of 3-nm CoFe 2 O 4 nanoparticles was sandwiched as a central layer into the standard spin-transfer torque magnetic tunneling junction (STT-MTJ) stack. With further focused ion beam (FIB) trimming, a dual-layer junction consisting of one or more nanoparticles separating two CoFeB ferromagnetic layers was turned into a two-terminal spintronic device. The measured room-temperature electron transport through the device showed a staircase effect reminiscent of a single electron transport, which in addition depended on the relative orientations of the magnetic states of the ferromagnetic layers and the high-anisotropy ferrimagnetic nanoparticle. Besides having the staircase steps, the V-I curve indicated switching of the nanoparticles magnetization through the STT effect at currents of above 0.05 uA. The magnetoresistance (MR) curve of this device with the magnetic field applied perpendicular to the junction had an anomalous oscillatory field dependence in a relatively low field range of below 100 Oe.

Characteristics of Single Electron Transport in a Quantum Dots System

Characteristics of Single Electron Transport in a Quantum Dots System

Distribution of waiting times between electron cotunneling events

In the resonant tunneling regime sequential processes dominate single electron transport through quantum dots or molecules that are weakly coupled to macroscopic electrodes. In the Coulomb blockade regime, however, cotunneling processes dominate. Cotunneling is an inherently quantum phenomenon and thus gives rise to interesting observations, such as an increase in the current shot noise. Since cotunneling processes are inherently fast compared to the sequential processes, it is of interest to examine the short time behaviour of systems where cotunneling plays a role, and whether these systems display nonrenewal statistics. We consider three questions in this paper. Given that an electron has tunneled from the source to the drain via a cotunneling or sequential process, what is the waiting time until another electron cotunnels from the source to the drain? What are the statistical properties of these waiting time intervals? How does cotunneling affect the statistical properties of a system with strong inelastic electron-electron interactions? In answering these questions, we extend the existing formalism for waiting time distributions in single electron transport to include cotunneling processes via an $n$-resolved Markovian master equation. We demonstrate that for a single resonant level the analytic waiting time distribution including cotunneling processes yields information on individual tunneling amplitudes. For both a SRL and an Anderson impurity deep in the Coulomb blockade there is a nonzero probability for two electrons to cotunnel to the drain with zero waiting time inbetween. Furthermore, we show that at high voltages cotunneling processes slightly modify the nonrenewal behaviour of an Anderson impurity with a strong inelastic electron-electron interaction.

Anisotropic Magneto-Coulomb Properties of 2D-0D Heterostructure Single Electron Device.

Fabrication and spintronics properties of 2D-0D heterostructures are reported. Devices based on graphene ("Gr")-aluminium nanoclusters heterostructures show robust and reproducible single-electron transport features, in addition to spin-dependent functionality when using a top magnetic electrode. The magnetic orientation of this single ferromagnetic electrode enables the modulation of the environmental charge experienced by the aluminium nanoclusters. This anisotropic magneto-Coulomb effect, originating from spin-orbit coupling within the ferromagnetic electrode, provides tunable spin valve-like magnetoresistance signatures without the requirement of spin coherent charge tunneling. These results extend the capability of Gr to act both as electrode and as a platform for the growth of 2D-0D mixed-dimensional van der Waals heterostructures, providing magnetic functionalities in the Coulomb blockade regime on scalable spintronic devices. These heterostructures pave the way towards novel device architectures at the crossroads of 2D material physics and spin electronics.

Peptide Inhibitor of Complement C1 (PIC1) demonstrates antioxidant activity via single electron transport (SET) and hydrogen atom transfer (HAT).

Reactive oxygen species (ROS) are natural byproducts of oxidative respiration that are toxic to organs and tissues. To mitigate ROS damage, organisms have evolved a variety of antioxidant systems to counteract these harmful molecules, however in certain pathological conditions these protective mechanisms can be overwhelmed. We have recently demonstrated that Peptide Inhibitor of Complement C1 (PIC1) mitigates peroxidase activity of the heme bearing proteins myeloperoxidase, hemoglobin, and myoglobin through a reversible process. To determine if this property of PIC1 was antioxidant in nature, we tested PIC1 in a number of well-established antioxidant assays. PIC1 showed dose-dependent antioxidant activity in a total antioxidant (TAC) assay, hydroxyl radical antioxidant capacity (HORAC) assay, oxygen radical antioxidant capacity (ORAC) assay as well as the thiobarbituric acid reactive substances (TBARS) assay to screen for PIC1 antioxidant activity in human plasma. The antioxidant activity of PIC1 in the TAC assay, as well as the HORAC/ORAC assay demonstrated that this peptide acts via the single electron transport (SET) and hydrogen atom transfer (HAT) mechanisms, respectively. Consistent with this mechanism of action, PIC1 did not show activity in a metal chelating activity (MCA) assay. PIC1 contains two vicinal cysteine residues and displayed similar antioxidant activity to the well characterized cysteine-containing tripeptide antioxidant molecule glutathione (GSH). Consistent with the role of the cysteine residues in the antioxidant activity of PIC1, oxidation of these residues significantly abrogated antioxidant activity. These results demonstrate that in addition to its described complement inhibiting activity, PIC1 displays in vitro antioxidant activity.

Single-electron transport through stabilised silicon nanocrystals.

We have fabricated organically capped stable luminescent silicon nanocrystals with narrow size distribution by a novel, high yield and easy to implement technique. We demonstrate transport measurements of individual silicon nanocrystals by scanning tunnelling microscopy at a low temperature in a double-barrier tunnel junction arrangement in which we observed pronounced single electron tunnelling effects. The tunnelling spectroscopy of these nanocrystals with different diameters reveals quantum confinement induced bandgap modifications. Furthermore, from the features in the tunnelling spectra, we differentiate several energy contributions arising from electronic interactions inside the nanocrystal. By applying a magnetic field, we have detected a variation in the differential conductance profile that we attribute to arising from higher order tunnelling processes. We have also systematically simulated our experimental data with the Orthodox theory, and the results show good agreement with the experiment. The study establishes a correlation between the nanocrystal size and quantum confinement induced band-structure modifications which will pave the way to devise tailored nanocrystals.

Electrotunable artificial molecules based on van der Waals heterostructures.

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.

Study of Coulomb attractive random telegraph signal in surface acoustic wave based single electron transport (SAW/SET) devices

We investigated the random telegraph signal (RTS) in surface acoustic wave based single electron transport (SAW/SET) devices. In our experiment, the ratio of the average time at the high acoustoelectric (AE) current state to the average time at the low AE current state, τhigh/τlow, increases when the gate voltage is progressively positive, as well as the radio frequency (rf) power is increased and the offset voltage is gradually decreased. The experiment result indicates that the trap center is positively charged before trapping an electron. In this paper, we describe one kind of RTS attributed to the positively charged trap center. And we can get information on the spin properties of a single trap by investigating the magnetic field dependence of the average time ratio τhigh/τlow of the RTS.