Single-crystal Graphene Research Articles

Controllable Synthesis of Wafer-Scale Graphene Films: Challenges, Status, and Perspectives.

The availability of high-quality, large-scale, and single-crystal wafer-scale graphene films is fundamental for key device applications in the field of electronics, optics, and sensors. Synthesis determines the future: unleashing the full potentials of such emerging materials relies heavily upon their tailored synthesis in a scalable fashion, which is by no means an easy task to date. This review covers the state-of-the-art progress in the synthesis of wafer-scale graphene films by virtue of chemical vapor deposition (CVD), with a focus on main challenges and present status. Particularly, prevailing synthetic strategies are highlighted on a basis of the discussion in the reaction kinetics and gas-phase dynamics during CVD process. Perspectives with respect to key opportunities and promising research directions are proposed to guide the future development of wafer-scale graphene films.

Controlled Lay-By-Layer Etching of CVD Grown Multilayer h-BN Single Crystal

Being a 2D insulator with alternating sp2 hybridized B and N atoms in a honeycomb structure, Hexagonal Boron Nitride(hBN) not only have uniqure properties like high transparency, large thermal conductivity, high mechanical strength and superior chemical inertness by itself, but also be able to promote other 2D materials’ performance when serving as the ultra-smooth dielectrilayer.[1,2] Since CVD process is established as the most effective way to grow large area hBN materials, it is critical to understand and control the growth process so as to making them ready for the large scale industrial applications. Etching of 2D materials should provide a scalable route for fabrication of highly desired various nanostructures such as nanoribbons with controlled termination providing a simple and direct way for 2D material property design, such as controlling the band gap and optical properties. [3,4] However, it is often easy to initiate the etching, but difficulty the control the location, shape, and size of the etching pattern. Previously reported etching patterns for 2D materials can be generally divided into four different categories: domain, boundary, fractal, and adlayer etching. [3-6] These etching patterns may co-exist in the etching process, but the dominant pattern depends on competition between various factors such as atmosphere, temperature, substrate, time etc. Layer number increase can often be achieved by increase the reaction temperature, time, and precursor concentration.While the layer number reducing after the multilayer hBN growth process remain challenging. Here we use the as-grow multilayer hBN single crystal from CVD process for controllable etching experiment, then both temperature related hydrogen etching and electronic energy related e-beam etching will be used to remove single layer of as-grown multilayer hBN. References Lu, G.; Wu, T; Yuan, Q.; Wang, H.; Wang, H.; Feng Ding, F.; Xie, X.; Jiang, M. Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy. Nat. Commun. 2014, 6, 6160.Liu, Z.; Gong, Y.; Zhou, W.; Ma, L.; Yu, J.; Idrobo, J. C.; Jung, J.; MacDonald, A.H.; Vajtai, R.; Lou, J.; Ajayan, P.M. Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride. Nat. Commun. 2013, 4, 2541.Vlassiouk, I.; Regmi, M.; Fulvio, P.; Dai, S.; Datskos, P.; Eres, G.; Smirnov, S. Role of hydrogen in chemical vapor deposition growth of large single-crystal graphene. ACS nano 2011, 5, 6069-6076.Wang, L.; Wu, B.; Jiang, L.; Chen, J.; Li, Y.; Guo, W.; Hu, P.; Liu, Y. Growth and Etching of Monolayer Hexagonal Boron Nitride. Adv. Mater. 2015, 27, 4858–4864.Rong, Y.; He, K.; Pacios, M.; Robertson, A. W.; Bhaskaran, H.; Warner, J. H. Controlled Preferential Oxidation of Grain Boundaries in Monolayer Tungsten Disulfide for Direct Optical Imaging. ACS Nano, 2015, 9, 3695–3703.Stehle, Y.; Sang, X.; Unocic, R.; Voylov, D.; Jackson, R.; Smirnov, S.; Vlassiouk, I., Anisotropic etching of hexagonal boron nitride and graphene: question of edge terminations Nano letters, 2017, 17 (12), 7306-7314

Epitaxial growth of wafer scale antioxidant single-crystal graphene on twinned Pt(111)

Wafer-scale single-crystal graphene with strong antioxidation is fundamentally important for their applications in electronics and optoelectronics. Although significant progress has been achieved in the chemical vapor deposition (CVD) growth of graphene, the production of wafer-scale graphene with high crystalline and excellent oxidation resistance still remains a challenge. Here, we report the epitaxial growth of 6-inch single-crystal graphene on twinned Pt (111) films with in-plane rotation of 60°(T-Pt) by ambient-pressure CVD. Our results show that the CVD-grown graphene on T-Pt exhibits fast growth rate and ultrahigh stability under the high-temperature air condition (>500 °C). The density functional theory (DFT) calculations reveal that the twinned Pt(111) surface does not change the preferential orientation of graphene nucleation, leading to highly aligned graphene domains on the T-Pt substrate. Moreover, the edge growth of graphene cannot be limited by the Pt twin boundaries (TBs), which is responsible for the fast growth of graphene single crystals. This work provides a reliable route to produce wafer-size single-crystal graphene monolayers with excellent oxidation resistance and clarifies the oriented growth mechanism of graphene domains on twinned Pt substrate.

The Mechanism of Graphene Vapor-Solid Growth on Insulating Substrates.

Wafer-scale single-crystal graphene film directly grown on insulating substrates via the chemical vapor deposition (CVD) method is desired for building high-performance graphene-based devices. In comparison with the well-studied mechanism of graphene growth on transition metal substrates, the lack of understanding on the mechanism of graphene growth on insulating surfaces greatly hinders the progress. Here, by using first-principles calculation, we systematically explored the absorption of various carbon species CHx (x = 0, 1, 2, 3, 4) on three typical insulating substrates [h-BN, sapphire, and quartz] and reveal that graphene growth on an insulating surface is dominated by the reaction of active carbon species with the hydrogen-passivated graphene edges and thus is less sensitive to the type of the substrate. The dominating gas phase precursor, CH3, plays two key roles in graphene CVD growth on an insulating substrate: (i) to feed the graphene growth and (ii) to remove excessive hydrogen atoms from the edge of graphene. The threshold reaction barriers for the growth of graphene armchair (AC) and zigzag (ZZ) edges were calculated as 3.00 and 1.94 eV, respectively; thus the ZZ edge grows faster than the AC one. Our theory successfully explained why the circumference of a graphene island grown on insulating substrates is generally dominated by AC edges, which is a long-standing puzzle of graphene growth. In addition, the very slow graphene growth rate on an insulating substrate is calculated and agrees well with existing experimental observations. The comprehensive insights on the graphene growth on insulating surfaces at the atomic scale provide guidance on the experimental design for high-quality graphene growth on insulating substrates.

CVD graphene-based flexible and transparent SERS substrate towards L-tyrosine detection

The simple, rapid, reproducible, and sensitive detection of trace amounts of molecules is of great interest in terms of early diagnosis of diseases and food safety in daily-life applications. In this study, low-pressure chemical vapor deposited (LP-CVD) graphene(G)-based flexible and transparent AgNPs/CVDG@AryLite™ nanostructured surface enhanced Raman scattering (SERS) substrate has been demonstrated towards the detection of L-Tyrosine (L-Tyr) amino acid molecules. The synthesize of high-quality, single-crystal monolayer graphene films was achieved with considerably low (62.81 Ω sq.−1) sheet resistance and 94% transmittance at 550 nm wavelength. AgNPs are uniformly formed with a size distribution of about 60 nm on the CVDG surface. The fabricated substrates have been investigated by Rhodamine 6G (R6G) as probe molecule and L-Tyr amino acid molecules with different concentrations to understand the SERS properties. Significant enhancement of R6G and L-Tyr on the fabricated AgNPs/CVDG@AryLite™ SERS substrates obtained even if the 10−8 M R6G and L-Tyr solutions are used. The enhancement factors (EFs) are calculated as 109 and 7.5 × 109 for R6G and L-Tyr, respectively. The results in this research show that the fabricated nanostructured SERS substrates might open up a new path to design flexible and transparent optoelectronic devices towards detection of trace amount of molecules particularly portable spectroscopic instruments.

Substrate Engineering for CVD Growth of Single Crystal Graphene.

Single crystal graphene (SCG) has attracted enormous attention for its unique potential for next-generation high-performance optoelectronics. In the absence of grain boundaries, the exceptional intrinsic properties of graphene are preserved by SCG. Currently, chemical vapor deposition (CVD) has been recognized as an effective method for the large-scale synthesis of graphene films. However, polycrystalline films are usually obtained and the present grain boundaries compromise the carrier mobility, thermal conductivity, optical properties, and mechanical properties. The scalable and controllable synthesis of SCG is challenging. Recently, much attention has been attracted by the engineering of large-size single-crystal substrates for the epitaxial CVD growth of large-area and high-quality SCG films. In this article, a comprehensive and comparative review is provided on the selection and preparation of various single-crystal substrates for CVD growth of SCG under different conditions. The growth mechanisms, current challenges, and future development and perspectives are discussed.

Investigation of photocatalysis reactions on the single-crystal and polycrystalline graphenes

Graphene has been extensive studied in the field of photocatalysis. Herein, single-crystal and polycrystalline graphenes are prepared by mechanical exfoliation and chemical vapor deposition (CVD), respectively. The photocatalytic properties of polycrystalline graphene are carefully assessed by using 4-nitrobenzenethiol (4-NBT), as a probe molecule, under incident 532 nm laser beam. Similarly, the photocatalytic properties of single-crystal graphene are also investigated with 4-aminothiophenol (PATP) under incident 633 nm laser radiation. In order to solve the problem of uneven distribution of probe molecules on graphene, the internal standard method is adopted by using 2-naphthalenethiol (2-NT), as the internal standard molecule. The experimental findings indicate that PATP can be catalyzed onto the surface of single-crystal graphene under the irradiation of 633 nm laser beam and its catalytic properties significantly increase with decreasing the number of graphene layers. In addition, when single-crystal graphene is used as the Surface-enhanced Raman scattering (SERS) enhancement substrate, the SERS enhancement was also increased with the decrease of the number of layers.

High-performance near-infrared photodetectors based on C3N quantum dots integrated with single-crystal graphene

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.

Effect of the Pressure of Reaction Gases on the Growth of Single-Crystal Graphene on the Inner Surfaces of Copper Pockets.

Single-crystal graphene has attracted much attention due to its excellent electrical properties in recent years, and many growth methods have been proposed, including the copper pockets method. In the copper pockets method, a piece of copper foil is folded into a pocket and put into a chemical vapor deposition (CVD) system for the growth of graphene. The dynamic balance of evaporation and deposition of copper on the inner surfaces of the copper pockets avoids high surface roughness caused by the evaporation of copper in open space, such as the outer surfaces of copper pockets. Much lower partial pressure of methane in the copper pockets and lower surface roughness reduce the nucleation density of graphene and increase the size of single-crystal graphene. It is found that the growth pressure is closely related to the size of single-crystal graphene prepared by the copper pockets method; the higher the growth pressure, the larger the size of single-crystal graphene. It is also found that the growth pressure has an effect on the inner surface roughness of the copper pockets, but the effect is not significant. The main factor affecting the size of the single-crystal graphene is the change in the volume of the copper pockets caused by the change in the growth pressure, and the volume of the copper pockets determines the content of methane in the copper pockets. According to the above law, the size of single-crystal graphene prepared by the copper pockets method can be enlarged by increasing the growth pressure. The size of single-crystal graphene can be enlarged in a wide range as the growth pressure can be increased in a wide range. In our experiments, when the growth pressure reached 450 Pa, single-crystal graphene with a diameter of 450 was prepared.

Electrically Controlled Liquid Crystal Microlens Array Based on Single-Crystal Graphene Coupling Alignment for Plenoptic Imaging.

As a unique electric-optics material, liquid crystals (LCs) have been used in various light-control applications. In LC-based light-control devices, the structural alignment of LC molecules is of great significance. Generally, additional alignment layers are required for LC lens and microlens, such as rubbed polyimide (PI) layers or photoalignment layers. In this paper, an electrically controlled liquid crystal microlens array (EC-LCMLA) based on single-crystal graphene (SCG) coupling alignment is proposed. A monolayer SCG with high conductivity and initial anchoring of LC molecules was used as a functional electrode, thus no additional alignment layer is needed, which effectively simplifies the basic structure and process flow of conventional LCMLA. Experiments indicated that a uniform LC alignment can be acquired in the EC-LCMLA cell by the SCG coupling alignment effect. The common optical properties including focal lengths and point spread function (PSF) were measured experimentally. Experiments demonstrated that the proposed EC-LCMLA has good focusing performance in the visible to near-infrared range. Moreover, the plenoptic imaging in Galilean mode was achieved by integrating the proposed EC-LCMLA with photodetectors. Digital refocusing was performed to obtain a rendering image of the target.

Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication.

Graphene on SiO2 enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO2 film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO2 film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (∼1 nm) crystalline or thicker (∼2 nm) amorphous SiO2 has been produced. The insulating nature of the thick amorphous SiO2 is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situ fabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.

Adlayer-free large-area single-crystal CVD graphene growth on copper

Chemical vapor deposition (CVD) graphene growth on copper foil has the potential to produce high-quality graphene at the industrial scale to realize its applications in future electronics and optoelectronic devices. During the graphene growth process, various parameters such as catalytic substrate, temperature, flow rate of precursor gases (methane and hydrogen) and presence of oxygen on the Cu substrate, directly affect graphene grain size, thickness and crystallinity. Researchers have been able to achieve large-area single-crystal monolayer graphene on Cu substrate. However, small fractions of bilayer or multilayer (adlayer) regions also appear along with single-crystal monolayer graphene. In recent years, researchers have been studying the effect of various growth parameters on adlayer formation. In this review, we have discussed the role and optimization of these growth parameters to achieve adlayer-free large-area single-crystal graphene on copper foil.

Tellurium-assisted and space-confined growth of graphene single crystals

Low-temperature synthesis of large-area graphene films by chemical vapor deposition (CVD) method has attracted extensive research interests owing to their extraordinary potential applications. Current reports on the low-temperature graphene growth usually involve catalytic metal substrates, which exceedingly impedes the direct use of graphene in nanoelectronic fabrications. In this project, we design a space-confined growth chamber utilizing two SiO2/Si chips. The bottom chip loading pre-transferred graphene flakes accommodates the growth of second monolayer graphene, with a tellurium (Te) vapor assisted growth process. Polymethylmethacrylate (PMMA) residues introduced from the transferred graphene substrate is employed as the solid carbon source. Further, the numerical simulation results prove that the high concentration of active carbons in the confined space plays a vital role in this growth process. Density functional theory (DFT) calculations reveal that, Te atoms prefer to bond with the edge carbons of small graphene flakes and serve as an effective catalyst, which helps to grow small graphene flakes by reducing their energy of formation. The successful growth can provide the high-quality monolayer graphene grains at the low temperature (∼350 °C). This facile strategy promises the mass production of graphene at mild conditions and low costs, which contributes to the green chemistry in future.

Integrated Wafer Scale Growth of Single Crystal Metal Films and High Quality Graphene.

We report on an approach to bring together single crystal metal catalyst preparation and graphene growth in a combined process flow using a standard cold-wall chemical vapor deposition (CVD) reactor. We employ a sandwich arrangement between a commercial polycrystalline Cu foil and c-plane sapphire wafer and show that close-spaced vacuum sublimation across the confined gap can result in an epitaxial, single-crystal Cu(111) film at high growth rate. The arrangement is scalable (we demonstrate 2″ wafer scale) and suppresses reactor contamination with Cu. While starting with an impure Cu foil, the freshly prepared Cu film is of high purity as measured by time-of-flight secondary ion mass spectrometry. We seamlessly connect the initial metallization with subsequent graphene growth via the introduction of hydrogen and gaseous carbon precursors, thereby eliminating contamination due to substrate transfer and common lengthy catalyst pretreatments. We show that the sandwich approach also enables for a Cu surface with nanometer scale roughness during graphene growth and thus results in high quality graphene similar to previously demonstrated Cu enclosure approaches. We systematically explore the parameter space and discuss the opportunities, including subsequent dry transfer, generality, and versatility of our approach particularly regarding the cost-efficient preparation of different single crystal film orientations and expansion to other material systems.

Analysis of interactions between proteins and small-molecule drugs by a biosensor based on a graphene field-effect transistor

We synthesized large-area single-crystal graphene sheets to use them in biosensors based on field-effect transistors (FET) for quantitative analysis of interaction kinetics and affinity between the imatinib drug and its target protein kinase Abl1. The G-FET biosensor showed an excellent performance and recognized imatinib at as low as 15.5 fM. The biosensor also showed a linear response to the logarithm of imatinib concentration in the 0.1 pM-10 μM range. This graphene-based FET biosensor (G-FET) was also applied to quantify Abl1 Y253 F mutation and Abl1 dependency on Mg2+ to bind to imatinib in real-time. Results demonstrated in this work clearly showed that the novel G-FET biosensors are very promising to analyze interactions between proteins and low molecular weight drugs.

Cluster Superlattice Membranes.

Cluster superlattice membranes consist of a two-dimensional hexagonal lattice of similar-sized nanoclusters sandwiched between single-crystal graphene and an amorphous carbon matrix. The fabrication process involves three main steps, the templated self-organization of a metal cluster superlattice on epitaxial graphene on Ir(111), conformal embedding in an amorphous carbon matrix, and subsequent lift-off from the Ir(111) substrate. The mechanical stability provided by the carbon-graphene matrix makes the membrane stable as a free-standing material and enables transfer to other substrates. The fabrication procedure can be applied to a wide variety of cluster materials and cluster sizes from the single-atom limit to clusters of a few hundred atoms, as well as other two-dimensional layer/host matrix combinations. The versatility of the membrane composition, its mechanical stability, and the simplicity of the transfer procedure make cluster superlattice membranes a promising material in catalysis, magnetism, energy conversion, and optoelectronics.

Fabrication and manipulation of nanosized graphene homojunction with atomically-controlled boundaries

Controlling the atomic configurations of structural defects in graphene nanostructures is crucial for achieving desired functionalities. Here, we report the controlled fabrication of high-quality single-crystal and bicrystal graphene nanoislands (GNI) through a unique top-down etching and post-annealing procedure on a graphite surface. Low-temperature scanning tunneling microscopy (STM) combined with density functional theory calculations reveal that most of grain boundaries (GBs) formed on the bicrystal GNIs are 5-7-5-7 GBs. Two nanodomains separated by a 5-7-5-7 GB are AB stacking and twisted stacking with respect to the underlying graphite substrate and exhibit distinct electronic properties, forming a graphene homojunction. In addition, we construct homojunctions with alternative AB/twisted stacking nanodomains separated by parallel 5-7-5-7 GBs. Remarkably, the stacking orders of homojunctions are manipulated from AB/twist into twist/twist type through a STM tip. The controllable fabrication and manipulation of graphene homojunctions with 5-7-5-7 GBs and distinct stacking orders open an avenue for the construction of GBs-based devices in valleytronics and twistronics.

Antenna-Coupled Graphene Field-Effect Transistors as a Terahertz Imaging Array

Terahertz radiation is extremely suitable for various imaging applications. In real life, these range from food or pharmaceutical quality control to illegal materials or human security control inspections. Despite its great potential, the wide usage and commercialization of terahertz imaging systems are still limited by the lack of compact technologies. The emerging graphene-based devices can efficiently contribute to fill this gap, offering higher versatility, scalability, and superior electronic properties compared to conventional semiconductors. In this work, we study a new scheme for realizing a multielement terahertz sensor, which is capable of multipixel parallel detection. The array consists of linearly distributed antenna-coupled graphene field-effect transistors, which are realized by exploiting a deterministic growth by chemical vapor deposition of single-crystal graphene. This novel growth technique ensures high material quality and offers large adaptability to different electronic device architectures. Relatively uniform terahertz detection performances (with a maximum homogeneity degree of 80%) were obtained with a maximum responsivity of the order of 1 V/W and an estimated response time in the picosecond scale. These detectors have demonstrated to fulfill several main requirements for image sensors (pixel uniformity, operability, and scalability), becoming very promising candidates for the realization of commercial high-resolution room-temperature terahertz cameras.

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides.

We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p–n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 1010 cm–2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K–1, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.

Controllable synthesis of graphene by CVD method

<p indent=0mm>In 2004, graphene was successfully prepared by micromechanical exfoliation of graphite, which attracts wide attention in the scientific research community. After that, related research of two-dimensional (2D) materials has received continuous exploration. In particular, academia and industry have paid tremendous attention and high expectations on graphene, owing to its remarkable and tunable physical, electrical, optical, magnetic properties and its potential applications in various fields. These practical applications include high performance electronics and optoelectronics, such as field effect transistors, transparent and flexible electrodes, spintronic devices, solar cells and so on. However, as is well-known, the practical commercial applications are based on mature and repeatable preparation of materials. Great achievements have been made in developing synthesis techniques, including micromechanical exfoliation, epitaxial growth, chemical vapor deposition (CVD), chemical exfoliation, arc discharge, segregation growth and bottom-up synthesis and so on. Among these methods, CVD method is regarded as the most versatile platform to obtain high quality, large area, and controllable number of layers with good repeatability and low cost for real commercial applications. Up to now, the past decade has witnessed significant developments in the field of CVD graphene synthesis. Herein, we present the development of this field by firstly introducing the origin of graphene and the background of CVD method. Then, the main achievements in the development of graphene since 2008 are presented from the point of view of controllable preparation. The CVD synthesis of graphene is focused mainly on four aspects: the selection and modification of catalytic substrates, the manipulation of reaction conditions, bandgap engineering and clean transfer. The selection of catalytic substrate plays a critical role in the controllable preparation of graphene by CVD method. The representative catalytic mechanisms of different substrates for growing graphene are introduced, followed by various modifications of catalytic metal substrates. Besides, surface morphology and microstructure of substrates have a great impact on the quality and uniformity of as-grown graphene. Thus, due to the disadvantages of non-uniform surface energy, defects, wrinkles and impurities on the surface of solid metal, the introduction of liquid copper catalytic system helps to better control the nucleation uniformity and optimize the graphene growth. Moreover, the preparation of large-area monocrystalline metal foils for obtaining large-scale single-crystal graphene was also reviewed. In order to avoid the disadvantages such as the damage, wrinkle and polymer pollution of graphene associated with transfer process occurred in the cases of using metal substrates to grow graphene, direct synthesis of graphene on dielectric substrates is presented with focuses on two basic controls of nucleation density and growth rate. A series of techniques such as reaction medium regulation, substrate surface modification, and plasma-assisted growth, the introduction of gaseous metals and direct preparation of graphene on liquid glass are introduced. The development of graphene vertical and planar heterostructures with hexagonal boron nitride is also presented. Moreover, the disadvantage of graphene limits its application in logic circuits due to its zero bandgap without an acceptable on/off ratio, and three main ways to open graphene bandgap are discussed including doping, the preparation of a large area of AB stacking bilayer graphene and engineering graphene nanoribbons. After that, a brief introduction of transfer method used in graphene post-processing is given. Finally, we summarize the problems existing in the field, and the future opportunities and challenges are discussed.