Adlayer-free large-area single-crystal CVD graphene growth on copper

Abstract

Chemical vapor deposition (CVD) graphene growth on copper foil has the potential to produce high-quality graphene at the industrial scale to realize its applications in future electronics and optoelectronic devices. During the graphene growth process, various parameters such as catalytic substrate, temperature, flow rate of precursor gases (methane and hydrogen) and presence of oxygen on the Cu substrate, directly affect graphene grain size, thickness and crystallinity. Researchers have been able to achieve large-area single-crystal monolayer graphene on Cu substrate. However, small fractions of bilayer or multilayer (adlayer) regions also appear along with single-crystal monolayer graphene. In recent years, researchers have been studying the effect of various growth parameters on adlayer formation. In this review, we have discussed the role and optimization of these growth parameters to achieve adlayer-free large-area single-crystal graphene on copper foil.