Single Crystal GaAs Substrates Research Articles

Electronic and Optical Properties of InAsxSb1−x Films

Solid solution InAsxSb1−x films have been prepared by flash evaporation of mixed InAs and InSb powders onto semi-insulating (100)-oriented single crystal GaAs substrates and glass cover slips. Electron beam microzone crystallization and thermal annealing were used to improve their crystalline perfection and their electrical properties. Recrystallization from the liquid phase was found to be feasible only over the limited range 0≤x<0.3 consistent with the stability criteria for fixed alloy systems developed by Van Vechten. The composition dependence of the absolute zero energy bandgaps, eg0 determined by means of otpical, photoelectric, and galvanomagnetic measurements supports the data obtained by Coderre and Woolley and disagrees with that of Kudman and Ekstrom obtained on bulk crystalline materials. The minimum in the composition dependence of eg0 of the films is between x=0.3 and x=0.6.

Surface preparation of single crystal n-type GaAs substrates studied by the channeling technique

physica status solidi (a)Volume 5, Issue 2 p. K83-K86 Short Note Surface preparation of single crystal n-type GaAs substrates studied by the channeling technique J. O. Hvalgård, J. O. Hvalgård Fysisk institutt, Universitetet i OsloSearch for more papers by this authorS. L. Andersen, S. L. Andersen Fysisk institutt, Universitetet i OsloSearch for more papers by this authorT. Olsen, T. Olsen Fysisk institutt, Universitetet i OsloSearch for more papers by this author J. O. Hvalgård, J. O. Hvalgård Fysisk institutt, Universitetet i OsloSearch for more papers by this authorS. L. Andersen, S. L. Andersen Fysisk institutt, Universitetet i OsloSearch for more papers by this authorT. Olsen, T. Olsen Fysisk institutt, Universitetet i OsloSearch for more papers by this author First published: 16 May 1971 https://doi.org/10.1002/pssa.2210050229Citations: 10AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume5, Issue216 May 1971Pages K83-K86 RelatedInformation

OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE

Backscattering of MeV 4He ions has been used to analyze the Ga and As content in SiO2 and Si3N4 dielectric layers deposited on single-crystal GaAs substrates. Changes in impurity concentrations and distributions are seen after isothermal annealing at both 750 and 800°C. Evidence for Ga outdiffusion is clear.

Dislocation free epitaxial GaAs

Completely dislocation free vapour grown layers (typical surface area 1 cm 2, thickness 30–60μ) can be grown on oriented dislocation free single crystal GaAs substrates. In not completely dislocation free layers, the freshly created dislocations usually start at the interface bulk-epitaxial layer. Pyramidal growth is only observed if dislocations and/or stacking faults are present in the layer.