Abstract
Completely dislocation free vapour grown layers (typical surface area 1 cm 2, thickness 30–60μ) can be grown on oriented dislocation free single crystal GaAs substrates. In not completely dislocation free layers, the freshly created dislocations usually start at the interface bulk-epitaxial layer. Pyramidal growth is only observed if dislocations and/or stacking faults are present in the layer.
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