Single Atomic Steps Research Articles

Nonadiabatic quantum control of valley states in silicon

Non-adiabatic quantum effects, often experimentally observed in semiconductors nano-devices such as single-electron pumps operating at high frequencies, can result in undesirable and uncontrollable behaviour. However, when combined with the valley degree of freedom inherent to silicon, these unfavourable effects may be leveraged for quantum information processing schemes. By using an explicit time evolution of the Schrodinger equation, we study numerically non-adiabatic transitions between the two lowest valley states of an electron in a quantum dot formed in a SiGe/Si heterostructure. The presence of a single atomic layer step at the top SiGe/Si interface opens an anti-crossing in the electronic spectrum as the centre of the quantum dot is varied. We show that an electric field applied perpendicularly to the interface allows tuning of the anti-crossing energy gap. As a result, by moving the electron through this anti-crossing, and by electrically varying the energy gap, it is possible to electrically control the probabilities of the two lowest valley states.

Systematic Investigation of the Coupling between One-Dimensional Edge States of a Topological Crystalline Insulator.

The interaction of spin-polarized one-dimensional (1D) topological edge modes localized along single-atomic steps of the topological crystalline insulator Pb_{0.7}Sn_{0.3}Se(001) has been studied systematically by scanning tunneling spectroscopy. Our results reveal that the coupling of adjacent edge modes sets in at a step-to-step distance d_{ss}≤25 nm, resulting in a characteristic splitting of a single peak at the Dirac point in tunneling spectra. Whereas the energy splitting exponentially increases with decreasing d_{ss} for single-atomic steps running almost parallel, we find no splitting for single-atomic step edges under an angle of 90°. The results are discussed in terms of overlapping wave functions with p_{x}, p_{y} orbital character.

Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)

AbstractMonolithic integration of III–V materials and devices on CMOS compatible on‐axis Si (001) substrates enables a route of low‐cost and high‐density Si‐based photonic integrated circuits. Inversion boundaries (IBs) are defects that arise from the interface between III–V materials and Si, which makes it almost impossible to produce high‐quality III–V devices on Si. In this paper, a novel technique to achieve IB‐free GaAs monolithically grown on on‐axis Si (001) substrates by realizing the alternating straight and meandering single atomic steps on Si surface has been demonstrated without the use of double Si atomic steps, which was previously believed to be the key for IB‐free III–V growth on Si. The periodic straight and meandering single atomic steps on Si surface are results of high‐temperature annealing of Si buffer layer. Furthermore, an electronically pumped quantum‐dot laser has been demonstrated on this IB‐free GaAs/Si platform with a maximum operating temperature of 120 °C. These results can be a major step towards monolithic integration of III–V materials and devices with the mature CMOS technology.

Nanoscale spatial mapping of mechanical properties through dynamic atomic force microscopy.

Dynamic atomic force microscopy (AFM) was employed to spatially map the elastic modulus of highly oriented pyrolytic graphite (HOPG), specifically by using force modulation microscopy (FMM) and contact resonance (CR) AFM. In both of these techniques, a variation in the amplitude signal was observed when scanning over an uncovered step edge of HOPG. In comparison, no variation in the amplitude signal was observed when scanning over a covered step on the same surface. These observations qualitatively indicate that there is a variation in the elastic modulus over uncovered steps and no variation over covered ones. The quantitative results of the elastic modulus required the use of FMM, while the CR mode better highlighted areas of reduced elastic modulus (although it was difficult to convert the data into a quantifiable modulus). In the FMM measurements, single atomic steps of graphene with uncovered step edges showed a decrease in the elastic modulus of approximately 0.5%, which is compared with no change in the elastic modulus for covered steps. The analysis of the experimental data taken under varying normal loads and with several different tips showed that the elastic modulus determination was unaffected by these parameters.

Influence of Substrate Bonding and Surface Morphology on Dynamic Organic Layer Growth: Perylenetetracarboxylic Dianhydride on Au(111).

We investigated the dynamics of the initial growth of the first epitaxial layers of perylenetetracarboxylic dianhydride (PTCDA) on the Au(111) surface with high lateral resolution using the aberration-corrected spectro-microscope SMART. With this instrument, we could simultaneously study the different adsorption behaviors and layer growth on various surface areas consisting of either a distribution of flat (111) terraces, separated by single atomic steps ("ideal surface"), or on areas with a high density of step bunches and defects ("realistic surface"). The combined use of photoemission electron microscopy, low-energy electron microscopy, and μ-spot X-ray absorption provided a wealth of new information, showing that the growth of the archetype molecule PTCDA not only has similarities but also has significant differences when comparing Au(111) and Ag(111) substrate surfaces. For instance, under otherwise identical preparation conditions, we observed different growth mechanisms on different surface regions, depending on the density of step bunches. In addition, we studied the spatially resolved desorption behavior which also depends on the substrate morphology.

Electrical Conductivity through a Single Atomic Step Measured with the Proximity-Induced Superconducting Pair Correlation.

Local disordered nanostructures in an atomically thick metallic layer on a semiconducting substrate play significant and decisive roles in transport properties of two-dimensional (2D) conductive systems. We measured the electrical conductivity through a step of monoatomic height in a truly microscopic manner by using as a signal the superconducting pair correlation induced by the proximity effect. The transport property across a step of a one-monolayer Pb surface metallic phase, formed on a Si(111) substrate, was evaluated by inducing the pair correlation around the local defect and measuring its response, i.e., the reduced density of states at the Fermi energy using scanning tunneling microscopy. We found that the step resistance has a significant contribution to the total resistance on a nominally flat surface. Our study also revealed that steps in the 2D metallic layer terminate the propagation of the pair correlation. Superconductivity is enhanced between the first surface step and the superconductor-normal-metal interface by reflectionless tunneling when the step is located within a coherence length.

Correlation Between Substrate Morphology and the Initial Stages of Epitaxial Organic Growth: PTCDA/Ag(111)

We have investigated the initial growth of the first two epitaxial layers of PTCDA on a Ag(111) surface consisting of a distribution of flat (111) terraces, separated by single atomic steps or step bunches with a few point defects. By utilizing the low-energy electron microscopy (LEEM) technique in both bright and dark field modes, we are able not only to follow the growth of the first layers but also to distinguish between different rotational and mirror domains and their influence on the growth of subsequent layers. Thus, we learn much about diffusion lengths and barriers, domain sizes, and about the influence of domain boundaries and nucleation centers. The results give deep insight into the growth dynamics, the influence of step orientation, and the quality of the resulting epitaxial layers and lead to the conclusion that the morphology of the substrate surface is likely to be the most influential parameter for the homogeneity of epitaxial layers.

Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing.

Surfaces with controlled atomic step structures as substrates are highly relevant to desirable performances of materials grown on them, such as light emitting diode (LED) epitaxial layers, nanotubes and nanoribbons. However, very limited attention has been paid to the step formation in manufacturing process. In the present work, investigations have been conducted into this step formation mechanism on the sapphire c (0001) surface by using both experiments and simulations. The step evolutions at different stages in the polishing process were investigated with atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). The simulation of idealized steps was constructed theoretically on the basis of experimental results. It was found that (1) the subtle atomic structures (e.g., steps with different sawteeth, as well as steps with straight and zigzag edges), (2) the periodicity and (3) the degree of order of the steps were all dependent on surface composition and miscut direction (step edge direction). A comparison between experimental results and idealized step models of different surface compositions has been made. It has been found that the structure on the polished surface was in accordance with some surface compositions (the model of single-atom steps: Al steps or O steps).

Optimistic concurrency with OPTIK

We introduce OPTIK, a new practical design pattern for designing and implementing fast and scalable concurrent data structures. OPTIK relies on the commonly-used technique of version numbers for detecting conflicting concurrent operations. We show how to implement the OPTIK pattern using the novel concept of OPTIK locks. These locks enable the use of version numbers for implementing very efficient optimistic concurrent data structures. Existing state-of-the-art lock-based data structures acquire the lock and then check for conflicts. In contrast, with OPTIK locks, we merge the lock acquisition with the detection of conflicting concurrency in a single atomic step, similarly to lock-free algorithms. We illustrate the power of our OPTIK pattern and its implementation by introducing four new algorithms and by optimizing four state-of-the-art algorithms for linked lists, skip lists, hash tables, and queues. Our results show that concurrent data structures built using OPTIK are more scalable than the state of the art.

Visualization of steps and surface reconstructions in Helium Ion Microscopy with atomic precision

Helium Ion Microscopy is known for its surface sensitivity and high lateral resolution. Here, we present results of a Helium Ion Microscopy based investigation of a surface confined alloy of Ag on Pt(111). Based on a change of the work function of 25meV across the atomically flat terraces we can distinguish Pt rich from Pt poor areas and visualize the single atomic layer high steps between the terraces. Furthermore, dechanneling contrast has been utilized to measure the periodicity of the hcp/fcc pattern formed in the 2–3 layers thick Ag/Pt alloy film. A periodicity of 6.65nm along the 〈11¯2〉 surface direction has been measured. In terms of crystallography a hcp domain is obtained through a lateral displacement of a part of the outermost layer by 1/3 of a nearest neighbor spacing along 〈11¯2〉. This periodicity is measured with atomic precision: coincidence between the Ag and the Pt lattices is observed for 23 Ag atoms on 24 Pt atoms. The findings are perfectly in line with results obtained with Low Energy Electron Microscopy and Phase Contrast Atomic Force Microscopy.

Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

A nonvolatile memory (NVM) based on an amorphous-indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with defect-engineered gate insulator was demonstrated. The gate insulator was a blocking alumina/storage alumina/tunneling alumina stack structure, which was simply assembled in a single atomic layer deposition step. The memory device showed a positive shift of threshold voltage as large as 14.4 V after +20 V, 1 s programming. In contrast, the memory erasing was not sensitive to negative gate voltage in the dark. Once programmed, the memory can only be light erased. Furthermore, the light combined with a negative bias improved the erasing speed effectively. In addition, a 10-year memory window as large as 7.5 V was extrapolated at room temperature with a charge loss of 34.7%. Based on the observation of blisters in the storage alumina layer after high temperature annealing, Fourier transform infrared spectroscopy measurement and first-principles calculations, the high electron storage capacity can be attributed to the deep defect levels in the storage alumina layer, which were originated from hydrogen impurity. This a-IGZO TFT charge trapping NVM with high performance and simple process is a candidate device for the application of fully functional transparent system on panel.

Calibrating the Z-magnification of atomic force microscope below 10 nm by single-atom steps

This study identifies a procedure for the calibration of the Z-magnification of an atomic force microscope below 10nm by single-atom steps and gives an uncertainty evaluation. A Si(111) surface with periodically arranged single-atom steps was used as a standard reference. The lattice constant of the Si(111) is 0.312nm, which is traced to SI units through X-ray diffraction. The 33 layers of continuous stacked single-atom steps were scanned and step heights ranging from 0.3nm to 10nm were measured and analyzed. The influential factors of calibration for the Z-magnification of an atomic force microscope were identified to estimate the uncertainty according to ISO/IEC Guide 98-3:2008. The relative expanded uncertainties ranged from 4.7% to 5.9%.

Conductivity of Si(111)-(7×7): the role of a single atomic step.

While it is known that the Si-(7×7) is a conducting surface, measured conductivity values differ by 7 orders of magnitude. Here we report a combined STM and transport method capable of surface conductivity measurement of step-free or single-step containing surface regions and having minimal interaction with the sample, and by which we quantitatively determine the intrinsic conductivity of the Si-(7×7) surface. We found that a single step has a conductivity per unit length about 50 times smaller than the flat surface. Our first principles quantum transport calculations confirm and lend insight into the experimental observation.

On the Influence of the Aliphatic Linker on Fabrication of Highly Ordered and Orientated Self-Assembled Monolayers of Aromatic Selenols on Au(111)

Self-assembled monolayers (SAMs) formed by adsorption of 1,2-dibenzyldiselenide (DPMSe) and 1,2-diphenyldiselenide (DBSe) on Au(111) substrates at room temperature have been characterized using scanning tunnelling microscopy, X-ray photoelectron spectroscopy, infrared reflection absorption spectroscopy, near-edge X-ray absorption fine structure spectroscopy , and low-energy electron diffraction. Upon adsorption, the Se–Se bonds in DPMSe and DBSe were cleaved on the gold surface to form phenylmethaneselenolate (PMSe) and benzeneselenolate (BSe) species, respectively. Although both PMSe and BSe molecular entities only differ in their structure (an additional methyl group in PMSe), the resulting monolayer films revealed noteworthy dissimilarities regarding their adlayer SAM structure and surface morphology. The molecular adlayer structure and orientation of PMSe and BSe species were found to vary significantly with the immersion time (IT). The resulting PMSe films were poorly organized, and the structure was described by a (4√3 × 2) rectangular unit cell for the SAMs prepared with 24 h of IT. Moreover, the PMSe-SAMs were found to be unstable upon exposure to air for a long time. Our results showed that exposure to air for 48 h results in the formation of small bright ad-islands, which have a height corresponding to that of a single atomic step on the Au(111). Contrary, BSe-SAMs exhibited densely packed and well-ordered monolayers, and two different structural phases were resolved at short and long ITs. The most densely packed structure was obtained for SAMs prepared with very short ITs (10 min). Upon increasing the IT, the SAMs exhibited structural changes to a lower density of molecular packing structure. The spectroscopic data also confirmed this structural transformation by suggesting an upright orientation for BSe-SAMs prepared after short ITs and strongly inclined adsorption geometry for SAMs prepared after long ITs.

Low-voltage and high-performance buzzer-scanner based streamlined atomic force microscope system

In this paper we present a novel scanner design in a quad-rod actuation structure, actuated by piezoelectric disk buzzers, and a new type of atomic force microscope (AFM), which uses this buzzer-scanner and a compact disk/digital-versatile-disk astigmatic optical pickup unit (OPU) for the detection of cantilever movements. Commercially available piezoelectric disk buzzers have a low capacitance and can be driven by low-voltage signal sources, such as analog outputs from a data acquisition card, without additional voltage or current amplifiers. Various scanning ranges can be realized through changing the dimensions of the actuation structure and/or the choice of disk buzzer. We constructed a buzzer-scanner and evaluated its performance. The scanner had a scanning range of 15 μm in the X and Y directions and an actuation range of 3.5 μm on the Z axis, with nonlinearity of 2.11%, 2.73%, and 2.19% for the X,Y and Z axes, respectively. The scanner had a resonance frequency of approximately 360 Hz on the X and Y axes, and 4.12 kHz on the Z axis. An OPU-AFM with this buzzer-scanner can resolve single atomic steps of a graphite substrate with a noise level of 0.06 nm. The obtained topographic images exhibit much less distortion than those obtained with an AFM using a piezoelectric tube scanner.

Operation of astigmatic-detection atomic force microscopy in liquid environments

The astigmatic detection system (ADS) based on commercial optical pickup head was demonstrated to achieve a sub-nanometer sensitivity in detecting the vertical movement of an object surface in air. The detection laser spot of the ADS was sub-μm and the detection bandwidth was over 80 MHz. These advantages allow detection of high-frequency mechanical resonance of very small objects, which would have many important applications in nanotechnology. In this work, we optimized the operation conditions of ADS to achieve good sensitivity in aqueous solutions. We demonstrated good contrast and good spatial resolution of cancer cells in water with the optical profilometry mode. We also built an ADS-AFM (atomic force microscopy) for imaging in water. A novel cantilever holder was designed, and the spurious peaks were suppressed down to 26.0% of the real resonance peak. Most importantly, we demonstrated that the ADS-AFM could resolve single atomic steps on a graphite substrate and image soft DNA molecules on mica in water.

AlN heteroepitaxy on sapphire by metalorganic vapour phase epitaxy using low temperature nucleation layers

Epitaxial films of AlN were grown on a sapphire substrate with a miscut of 0.38°±0.02° towards the m-plane by metalorganic vapour phase epitaxy. A low temperature nucleation layer was used to overcome growth instabilities and to suppress the formation of inversion domains. This was followed by high temperature growth at 1250°C. This two-step process, gives an acceptable material quality, (0002 FWHM=398±10′′ and 10–11 FWHM=940±23′′), but resulted in a top surface dominated by large steps, with average heights of 6.0±0.5nm. Atomic force microscopy analysis of step termination sites shows a staircase of single and double atomic steps, showing large steps are formed by the bunching of single steps, perhaps pinned by threading dislocations. To achieve a smooth top surface, 100nm of the high temperature AlN is followed by growth at 1110°C. This three step process largely eliminates the large steps resulting in a layer that has a smooth surface morphology and lower defect density (0002 FWHM=351±9′′ and 10–11 FWHM=761±19′′).

Surface morphology of ultrathin hex-Pr2O3 films on Si(1 1 1)

In this work, the morphology of the surface of hexagonal Pr2O3(0 0 0 1) films grown on Si(1 1 1) is studied by high-resolution low-energy electron diffraction combined with spot profile analysis. For this purpose, praseodymia films prepared by molecular beam epitaxy were capped with protecting amorphous germanium films. After removal of the capping layers due to heating in diluted oxygen atmosphere the surface properties of the oxide film were investigated in situ with Auger electron spectroscopy and spot profile analysis low energy electron diffraction. The removal of the capping layer has no impact on the hexagonal Pr2O3(0 0 0 1) film structure which is shown by x-ray diffraction. Surface sensitive electron diffraction confirms that the surface of the oxide film has hexagonal structure. Diffraction spot profile analysis shows that the film surface has grain structure without any mosaic spread due to the negligible lateral lattice mismatch between hexagonal Pr2O3(0 0 0 1) and Si(1 1 1). In addition, single atomic steps with complete bulk unit cell height are present at the surface. The density of the atomic steps is small pointing again to the high quality of the surface of hexagonal Pr2O3 films compared to cubic Pr2O3 films grown on Si(1 1 1).

Spin reorientation transitions and structures of electrodeposited Ni/Cu(100) ultrathin films with and without Pb additives

Magnetic properties and surface structures of Ni/Cu(100) ultrathin films are studied by means of magneto-optical Kerr effect and in situ scanning tunneling microscopy in combination with cyclic voltammetry. At the initial stage of Ni deposition on a Cu(100) electrode, nickel atoms attach onto the steps and the surface shows single atomic steps corresponding to a layer-by-layer growth. For thicker Ni/Cu(100) films, nanometer-size clusters are randomly distributed on the surface showing a three-dimensional island growth. For thinner Ni layers in the coherent region, the magnetic anisotropy energy of the Cl-electrolyte/Ni interface is small. The reduction of squareness of the hysteresis loops is related to the inhomogeneous growth of the Ni layers. For thicker Ni layers in the incoherent region, the negative value of interface anisotropy for the Cl-electrolyte/Ni interface has a strong impact on perpendicular magnetic anisotropy and plays an important role on the reduction of the Ni thickness for spin reorientation transition in the electrolyte condition. By adding Pb additives, the deposition of a Pb wetting layer causes a defaceting phenomenon and the hydrogen evolution reaction is reduced. As the Ni thickness increases, the growth of Ni changes from layer-by-layer to quasi-two-dimensional islands with a flat top layer. With a Pb additive, the spin reorientation transitions of the Ni/Cu(100) system are not significantly influenced. However, due to the change of the growth mode by Pb atoms as a surfactant, the squareness of the hysteresis loops is enhanced for all the Ni thicknesses.

Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step

A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V·s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the Idrain- Vgate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.